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Fibonacci terahertz imaging by silicon diffractive optics
Authors:
Domas Jokubauskis,
Linas Minkevičius,
Mindaugas Karaliūnas,
Simonas Indrišiūnas,
Irmantas Kašalynas,
Gediminas Račiukaitis,
Gintaras Valušis
Abstract:
Fibonacci or bifocal terahertz (THz) imaging is demonstrated experimentally employing silicon diffractive zone plate (SDZP) in a continuous wave mode. Images simultaneously recorded in two different planes are exhibited at 0.6 THz frequency with the spatial resolution of wavelength. Multi-focus imaging operation of the Fibonacci lens is compared with a performance of the conventional silicon phase…
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Fibonacci or bifocal terahertz (THz) imaging is demonstrated experimentally employing silicon diffractive zone plate (SDZP) in a continuous wave mode. Images simultaneously recorded in two different planes are exhibited at 0.6 THz frequency with the spatial resolution of wavelength. Multi-focus imaging operation of the Fibonacci lens is compared with a performance of the conventional silicon phase zone plate. Spatial profiles and focal depth features are discussed varying the frequency from 0.3 THz to 0.6 THz. Good agreement between experimental results and simulation data is revealed.
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Submitted 7 October, 2020;
originally announced October 2020.
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Description of the wavevector dispersion of surface plasmon-phonon-polaritons
Authors:
V. V. Korotyeyev,
V. Janonis,
I. Kašalynas
Abstract:
We reported here the results of the calculations of wavevector dispersion of oscillations frequencies, $ω'(k)$, and dam** $ω''(k)$ of the surface plasmon phonon polaritons (\mbox{SPPhP}) for the heavy-doped GaN sample. We showed that $ω'(k)$- dependence consists of the three branches with the specific anticrossing behavior due to the interaction of surface plasmon polariton (SPP) with surface ph…
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We reported here the results of the calculations of wavevector dispersion of oscillations frequencies, $ω'(k)$, and dam** $ω''(k)$ of the surface plasmon phonon polaritons (\mbox{SPPhP}) for the heavy-doped GaN sample. We showed that $ω'(k)$- dependence consists of the three branches with the specific anticrossing behavior due to the interaction of surface plasmon polariton (SPP) with surface phonon polariton(SPhP). The strong renormalization of the dam** $ω''(k)$ in the vicinity of the anticrossing region was found. The obtained dispersions of the $ω'(k)$ and $ω''(k)$ were applied for the analytical analysis of exact electrodynamic simulation of the resonant behavior of the reflectivity spectrum of the n-GaN grating.
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Submitted 13 February, 2020;
originally announced February 2020.
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Laser structuring for control of coupling between THz light and phonon modes
Authors:
X. W. Wang,
G. Seniutinas,
A. Balcytis,
I. Kasalynas,
V. Jakstas,
V. Janonis,
R. Venckevicius,
R. Buividas,
D. Appadoo,
G. Valusis,
S. Juodkazis
Abstract:
Modification of surface and volume of sapphire is shown to affect reflected and transmitted light at THz spectral range. Structural modifications were made using ultra-short 230 fs laser pulses at 1030 nm and 257.5 nm wavelengths forming surface ripples of ~250 nm and 60 nm period, respectively. Softening of the transverse optical phonon TO1 mode due to disorder was the most pronounced in reflecti…
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Modification of surface and volume of sapphire is shown to affect reflected and transmitted light at THz spectral range. Structural modifications were made using ultra-short 230 fs laser pulses at 1030 nm and 257.5 nm wavelengths forming surface ripples of ~250 nm and 60 nm period, respectively. Softening of the transverse optical phonon TO1 mode due to disorder was the most pronounced in reflection from laser ablated surface. It is shown that sub-surface periodic patterns of laser damage sites have also modified reflection spectrum due to coupling of THz radiation with phonons. Application potential of laser structuring and disordering for phononic engineering is discussed.
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Submitted 14 May, 2016;
originally announced May 2016.
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Influence of field effects on the performance of InGaAs-based terahertz radiation detectors
Authors:
Linas Minkevičius,
Vincas Tamošiūnas,
Martynas Kojelis,
Ernestas Žąsinas,
Virginijus Bukauskas,
Arūnas Šetkus,
Renata Butkutė,
Irmantas Kašalynas,
Gintaras Valušis
Abstract:
A detailed electrical characterization of high-performance bow-tie InGaAs based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the detectors by means of Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy (STM), which also enabled the determination of the Fermi level. Currentvo…
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A detailed electrical characterization of high-performance bow-tie InGaAs based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the detectors by means of Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy (STM), which also enabled the determination of the Fermi level. Currentvoltage curves were measured and modelled using the Synopsys Sentaurus TCAD package to gain deeper insight into the processes involved in detector operation. In addition, we performed finite difference time-domain (FDTD) simulations to reveal features related to changes in the electric field due to the metal detector contacts. The investigation revealed that field effect-induced conductivity modulation is a possible mechanism contributing to the high sensitivity of the studied detectors.
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Submitted 28 March, 2017; v1 submitted 3 May, 2016;
originally announced May 2016.
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Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Authors:
W. Knap,
M. Dyakonov,
D. Coquillat,
F. Teppe,
N. Dyakonova,
J. Łusakowski,
K. Karpierz,
M. Sakowicz,
G. Valusis,
D. Seliuta,
I. Kasalynas,
A. El Fatimy,
Y. Meziani,
T. Otsuji
Abstract:
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves res…
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Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.
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Submitted 15 July, 2009;
originally announced July 2009.
