Showing 1–14 of 14 results for author: Kasırga, T S

Photoluminescence enhancement at the vertical van der Waals semiconductor-metal heterostructures

Authors: Hafiz Muhammad Shakir, Abdulsalam Aji Suleiman, Kübra Nur Kalkan, Amir Parsi, Uğur Başçı, Mehmet Atıf Durmuş, Ahmet Osman Ölçer, Hilal Korkut, Cem Sevik, İbrahim Sarpkaya, Talip Serkan Kasırga

Abstract: Excitons in monolayer transition metal dichalcogenides (TMDCs) offer intriguing new possibilities for optoelectronics with no analogues in bulk semiconductors. Yet, intrinsic defects in TMDCs limit the radiative exciton recombination pathways. As a result, the photoluminescence (PL) quantum yield (QY) is limited. Methods like superacid treatment, electrical do**, and plasmonic engineering can in… ▽ More Excitons in monolayer transition metal dichalcogenides (TMDCs) offer intriguing new possibilities for optoelectronics with no analogues in bulk semiconductors. Yet, intrinsic defects in TMDCs limit the radiative exciton recombination pathways. As a result, the photoluminescence (PL) quantum yield (QY) is limited. Methods like superacid treatment, electrical do**, and plasmonic engineering can inhibit nonradiative decay channels and enhance PL. Here, we show a more straightforward approach that allows PL enhancement. An engineered vertical van der Waals (vdW) metal-monolayer semiconductor junction (MSJ) results in PL enhancement of more than an order of magnitude at technologically relevant excitation powers. Such MSJ can be constructed by vertically stacking metals with suitable work function either above or below a monolayer semiconducting TMDC. Our experiments reveal that the underlying PL enhancement mechanism is to be the suppressed exciton quenching due to the absence of metal-induced gap states and weak Fermi level pinning, thanks to the vdW gapped interface between the metal and the TMDC. Our time-resolved PL measurements further indicate that reduced exciton-exciton annihilation, even at high generation rates, contributes to the observed PL enhancement. The PL intensity is further increased by the proximity of surface plasmons in the metal with the TMDC layer. Our findings shed light on the interaction at vdW metal-semiconductor interfaces and offer a path to improving the optoelectronic performance of semiconducting TMDCs. △ Less

Submitted 31 May, 2024; originally announced May 2024.

Synthesis of Ultra-Thin Superionic Cu2Se and New Aspects of the Low-Temperature Crystal Configurations

Authors: Abdulsalam Aji Suleiman, Amir Parsi, Mohammadali Razeghi, Uğur Başçı, Saeyoung Oh, Doruk Pehlivanoğlu, Hu Young Jeoung, Kibum Kang, T. Serkan Kasırga

Abstract: Superionic conductors offer unique advantages for novel technological devices in various fields, such as energy storage and neuromorphic computing. Above 414 K, Cu2Se turns into a well-known superionic conductor via a phase transition, and it is demonstrated to exhibit peculiar electrical and thermoelectric properties in bulk. Here, we report a large-area synthesis of ultra-thin single crystalline… ▽ More Superionic conductors offer unique advantages for novel technological devices in various fields, such as energy storage and neuromorphic computing. Above 414 K, Cu2Se turns into a well-known superionic conductor via a phase transition, and it is demonstrated to exhibit peculiar electrical and thermoelectric properties in bulk. Here, we report a large-area synthesis of ultra-thin single crystalline Cu2Se using the chemical vapor deposition method. We demonstrate that Cu2Se crystals exhibit optically and electrically controllable robust phase reconfiguration below 414 K. Moreover, our results show that the mobility of the liquid-like Cu ion vacancies in Cu2Se causes macroscopic fluctuations in the Cu ordering. Consequently, phase variations are not dictated by the diffusive motion of the ions but by the local energy minima formed due to the interplay between the extrinsic and the intrinsic material parameters. As a result, long-range ordering of the crystal below 414 K is optically observable at a micrometer scale. Our results show that Cu2Se could find applications beyond thermoelectric such as smart optical coatings, optoelectronic switching, and ionic transistors. △ Less

Submitted 29 April, 2023; originally announced May 2023.

Single-material MoS$_{2}$ thermoelectric junction enabled by substrate engineering

Authors: Mohammadali Razeghi, Jean Spiece, Oğuzhan Oğuz, Doruk Pehlivanoğlu, Yubin Huang, Ali Sheraz, Phillip S. Dobson, Jonathan M. R. Weaver, Pascal Gehring, T. Serkan Kasırga

Abstract: To realize a thermoelectric power generator, typically a junction between two materials with different Seebeck coefficient needs to be fabricated. Such difference in Seebeck coefficients can be induced by do**, which renders difficult when working with two-dimensional (2d) materials. Here, we employ substrate effects to form a thermoelectric junction in ultra-thin few-layer MoS2 films. We invest… ▽ More To realize a thermoelectric power generator, typically a junction between two materials with different Seebeck coefficient needs to be fabricated. Such difference in Seebeck coefficients can be induced by do**, which renders difficult when working with two-dimensional (2d) materials. Here, we employ substrate effects to form a thermoelectric junction in ultra-thin few-layer MoS2 films. We investigated the junctions with a combination of scanning photocurrent microscopy and scanning thermal microscopy. This allows us to reveal that thermoelectric junctions form across the substrate-engineered parts. We attribute this to a gating effect induced by interfacial charges in combination with alterations in the electron-phonon scattering mechanisms. This work demonstrates that substrate engineering is a promising strategy to develop future compact thin-film thermoelectric power generators. △ Less

Submitted 3 January, 2023; originally announced January 2023.

Second Harmonic Generation in Chemical Vapor Deposition Synthesized CuS Crystals

Authors: Abdulsalam Aji Suleiman, Reza Rahighi, Amir Parsi, Talip Serkan Kasırga

Abstract: Copper sulfide (CuS) has garnered significant attention in various fields of application due to its unique electronic, optical, and catalytic features. In this study, we present the chemical vapor deposition (CVD)-based synthesis of ultrathin CuS crystals as thin as 14 nm with lateral sizes up to 60 um. The structure, morphology, and composition of the as-synthesized CuS crystals were thoroughly c… ▽ More Copper sulfide (CuS) has garnered significant attention in various fields of application due to its unique electronic, optical, and catalytic features. In this study, we present the chemical vapor deposition (CVD)-based synthesis of ultrathin CuS crystals as thin as 14 nm with lateral sizes up to 60 um. The structure, morphology, and composition of the as-synthesized CuS crystals were thoroughly characterized. Among our results, we measured the first-order temperature coefficients of Raman shifts of CuS. Moreover, we showed that CuS crystals exhibited an unexpected second harmonic generation (SHG), which is attributed to the presence of defects in the CuS lattice. Our results suggest that single crystalline CuS possesses a considerable potential for nonlinear optical applications in conjunction with its current applications in electronics and catalysis. △ Less

Submitted 15 May, 2023; v1 submitted 3 January, 2023; originally announced January 2023.

Plasmon-Enhanced Photoresponse of a Single Silver Nanowire and its Networked Devices

Authors: Mohammadali Razeghi, Merve Üstünçelik, Farzan Shabani, Hilmi Volkan Demir, T. Serkan Kasırga

Abstract: Photo-bolometric effect is critically important in optoelectronic structures and devices employing metallic electrodes with nanoscale features due to heating caused by the plasmonic field enhancement. One peculiar case is individual silver nanowires (Ag NWs) and their networks. Ag NW-networks exhibit excellent thermal, electrical, and mechanical properties, providing a simple yet reliable alternat… ▽ More Photo-bolometric effect is critically important in optoelectronic structures and devices employing metallic electrodes with nanoscale features due to heating caused by the plasmonic field enhancement. One peculiar case is individual silver nanowires (Ag NWs) and their networks. Ag NW-networks exhibit excellent thermal, electrical, and mechanical properties, providing a simple yet reliable alternative to common flexible transparent electrode materials used in optoelectronic devices. To date there have been no reports on the photoresponse of Ag NWs. In this work, we show that a single Ag NW and a network of such Ag NWs possess a significant, intrinsic photoresponse thanks to the photo-bolometric effect, as directly observed and measured using scanning photocurrent microscopy. Surface plasmon polaritons (SPP) created at the contact metals or plasmons created at the nanowire-metal structures cause heating at the junctions where a plasmonic field enhancement is possible. The local heating of the Ag NWs results in negative photoconductance due to the bolometric effect. Here an open-circuit response due to the plasmon-enhanced Seebeck effect was recorded at the NW-metal contact junctions. The SPP-assisted bolometric effect is found to be further enhanced by decorating the Ag NWs with Ag nanoparticles. These observations are relevant to the use of metallic nanowires in plasmonic applications in particular and in optoelectronics in general. Our findings may pave the path for plasmonics enabled sensing without a spectroscopic detection. △ Less

Submitted 23 January, 2022; originally announced January 2022.

High elasticity and strength of ultra-thin metallic transition metal dichalcogenides

Authors: Ali Sheraz, Naveed Mehmood, Mert Miraç Çiçek, İbrahim Ergün, Hamid Reza Rasouli, Engin Durgun, T. Serkan Kasırga

Abstract: Mechanical properties of transition metal dichalcogenides (TMDCs) are relevant to their prospective applications in flexible electronics. So far, the focus has been on the semiconducting TMDCs, mostly MoX2 and WX2 (X=S, Se) due to their potential in optoelectronics. A comprehensive understanding of the elastic properties of metallic TMDCs is needed to complement the semiconducting TMDCs in flexibl… ▽ More Mechanical properties of transition metal dichalcogenides (TMDCs) are relevant to their prospective applications in flexible electronics. So far, the focus has been on the semiconducting TMDCs, mostly MoX2 and WX2 (X=S, Se) due to their potential in optoelectronics. A comprehensive understanding of the elastic properties of metallic TMDCs is needed to complement the semiconducting TMDCs in flexible optoelectronics. Thus, mechanical testing of metallic TMDCs is pertinent to the realization of the applications. Here, we report on the atomic force microscopy-based nano-indentation measurements on ultra-thin 2H-TaS2 crystals to elucidate the stretching and breaking of the metallic TMDCs. We explored the elastic properties of 2H-TaS2 at different thicknesses ranging from 3.5 nm to 12.6 nm and find that the Young's modulus is independent of the thickness at a value of 85.9 +- 10.6 GPa, which is lower than the semiconducting TMDCs reported so far. We determined the breaking strength as 5.07 4- 0.10 GPa which is 6% of the Young's modulus. This value is comparable to that of other TMDCs. We used ab initio calculations to provide an insight to the high elasticity measured in 2H-TaS2. We also performed measurements on a small number of 1T-TaTe2, 3R-NbS2 and 1T-NbTe2 samples and extended our ab initio calculations to these materials to gain a deeper understanding on the elastic and breaking properties of metallic TMDCs. This work illustrates that the studied metallic TMDCs are suitable candidates to be used as additives in composites as functional and structural elements and for flexible conductive electronic devices. △ Less

Submitted 5 March, 2021; originally announced March 2021.

Synthesis, electric-field induced phase transitions and memristive properties of spontaneously ion intercalated two-dimensional MnO$_2$

Authors: Hamid Reza Rasouli, Jeongho Kim, Naveed Mehmood, Ali Sheraz, Min-kyung Jo, Seungwoo Song, Kibum Kang, T. Serkan Kasırga

Abstract: Two-dimensional (2D) materials are suitable hosts for the intercalation of extrinsic guest ions such as Li+, Na+ and K+ as the interlayer coupling is weak. This allows ion intercalation engineering of 2D materials, which may be a key to advancing technological applications in energy storage, neuromorphic electronics, and bioelectronics. However, ions that are extrinsic to the host materials posses… ▽ More Two-dimensional (2D) materials are suitable hosts for the intercalation of extrinsic guest ions such as Li+, Na+ and K+ as the interlayer coupling is weak. This allows ion intercalation engineering of 2D materials, which may be a key to advancing technological applications in energy storage, neuromorphic electronics, and bioelectronics. However, ions that are extrinsic to the host materials possess challenges in fabrication of devices as there are extra steps of ion intercalation. This results in degradation of the long-term stability of the intercalated atomically thin structures. Here, we introduce large-area single-crystal ultra-thin layered MnO$_2$ via chemical vapor deposition, spontaneously intercalated by potassium ions during the synthesis. We studied the ultra-thin 2D K-MnO$_2$ in detail and showed that charge transport in these crystals is dominated by motion of hydrated potassium ions in the interlayer space. Moreover, K-MnO$_2$ crystals exhibit reversible layered-to-spinel phase transition accompanied by an optical contrast change based on the electrical and optical modulation of the potassium and the interlayer water concentration. We used the electric field driven ionic motion in K-MnO$_2$ based devices to demonstrate the memristive properties of two terminal devices. As a possible application we showed that K-MnO$_2$ memristors display synapse-like behavior such as short and long-term potentiation and depression as well as ionic coupling effects. △ Less

Submitted 18 February, 2021; originally announced February 2021.

Thermal Conductivity Measurements in Nanosheets via Bolometric Effect

Authors: Onur Çakıroğlu, Naveed Mehmood, Mert Miraç Çiçek, Aizimaiti Aikebaier, Hamid Reza Rasouli, Engin Durgun, T. Serkan Kasırga

Abstract: Thermal conductivity measurement techniques for materials with nanoscale dimensions require fabrication of very complicated devices or their applicability is limited to a class of materials. Discovery of new methods with high thermal sensitivity are required for the widespread use of thermal conductivity measurements in characterizing materials properties. We propose and demonstrate a simple non-d… ▽ More Thermal conductivity measurement techniques for materials with nanoscale dimensions require fabrication of very complicated devices or their applicability is limited to a class of materials. Discovery of new methods with high thermal sensitivity are required for the widespread use of thermal conductivity measurements in characterizing materials properties. We propose and demonstrate a simple non-destructive method with superior thermal sensitivity to measure the in-plane thermal conductivity of nanosheets and nanowires using the bolometric effect. The method utilizes laser beam heating to create a temperature gradient, as small as a fraction of a Kelvin, over the suspended section of the nanomaterial with electrical contacts. Local temperature rise due to the laser irradiation alters the electrical resistance of the device, which can be measured precisely. This resistance change is then used to extract the temperature profile along the nanomaterial using thermal conductivity as a fitting parameter. We measured the thermal conductivity of V2O3 nanosheets to validate the applicability of the method and found an excellent agreement with the literature. Further, we measured the thermal conductivity of metallic 2H-TaS2 for the first time and performed ab initio calculations to support our measurements. Finally, we discussed the applicability of the method on semiconducting nanosheets and performed measurements on WS2 and MoS2 thin flakes. △ Less

Submitted 2 January, 2020; originally announced January 2020.

Synthesis of V$_{2}$O$_{3}$ Nanoplates

Authors: Hamid Reza Rasouli, Naveed Mehmood, Onur Çakıroğlu, Engin Can Sürmeli, T. Serkan Kasırga

Abstract: Peculiar features exist in the stress-temperature phase stability diagram of V$_{2}$O$_{3}$ such as a first order phase transition between the paramagnetic insulating and metallic phases that ends with a critical point, quantum phase transition, and a triple point. These features remain largely unexplored and the exact nature of the phase transitions is not clear due to very limited control over t… ▽ More Peculiar features exist in the stress-temperature phase stability diagram of V$_{2}$O$_{3}$ such as a first order phase transition between the paramagnetic insulating and metallic phases that ends with a critical point, quantum phase transition, and a triple point. These features remain largely unexplored and the exact nature of the phase transitions is not clear due to very limited control over the stress in bulk or film samples. Here, we show the synthesis of single-crystal V$_{2}$O$_{3}$ nanoplates for the first time using chemical vapor deposition via van der Waals epitaxy. Thickness of the V$_{2}$O$_{3}$ nanoplates range from a few to hundreds of nanometres and they can be mechanically exfoliated from the growth substrate. Using Raman spectroscopy on the nanoplates, we reveal that upon heating, V$_{2}$O$_{3}$ enters supercritical state for both tensiley strained and relaxed crystals with similar out-of-plane response. Transmission electron microscopy on V2O3 nanoplates hints the existence of a structural change when the crystals are heated. Our results show that V$_{2}$O$_{3}$ nanoplates should be useful for studying the physics of supercritical state and the phase stability of V$_{2}$O$_{3}$ to enable new horizons in applications. △ Less

Submitted 2 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. B 100, 161107 (2019)

Real time optical observation and control of atomically thin transition metal dichalcogenide synthesis

Authors: Hamid Reza Rasouli, Naveed Mehmood, Onur Çakıroğlu, T. Serkan Kasırga

Abstract: Understanding the mechanisms involved in chemical vapour deposition (CVD) synthesis of atomically thin transition metal dichalcogenides (TMDCs) requires the precise control of numerous growth parameters. All the proposed mechanisms and their relation to the growth conditions are inferred from characterising intermediate formations obtained by stop** the growth blindly. To fully understand the re… ▽ More Understanding the mechanisms involved in chemical vapour deposition (CVD) synthesis of atomically thin transition metal dichalcogenides (TMDCs) requires the precise control of numerous growth parameters. All the proposed mechanisms and their relation to the growth conditions are inferred from characterising intermediate formations obtained by stop** the growth blindly. To fully understand the reaction routes that lead to the monolayer formation, real time observation and control of the growth are needed. Here, we demonstrate how a custom-made CVD chamber that allows real time optical monitoring can be employed to study the reaction routes that are critical to the production of the desired layered thin crystals in salt assisted TMDC synthesis. Our real time observations reveal the reaction between the salt and the metallic precursor to form intermediate compounds which lead to the layered crystal formation. We identified that both the vapour-solid-solid and vapour-liquid-solid growth routes are in an interplay. Furthermore, we demonstrate the role H$_{2}$ plays in the salt-assisted WSe$_{2}$ synthesis. Finally, we guided the crystal formation by directing the liquid intermediate compound through pre-patterned channels. The methods presented in this article can be extended to other materials that can be synthesized via CVD. △ Less

Submitted 15 August, 2018; originally announced August 2018.

Photocurrent Generation in a Metallic Transition Metal Dichalcogenide

Authors: Naveed Mehmood, Hamid Reza Rasouli, Onur Çakıroğlu, T. Serkan Kasırga

Abstract: Light induced current in two-dimensional (2D) layered materials emerges from mechanisms such as photothermoelectric effect, photovoltaic effect or nonlocal hot carrier transport. Semiconducting layered transition metal dichalcogenides have been studied extensively in recent years as the generation of current by light is a crucial process in optoelectronic and photovoltaic devices. However, photocu… ▽ More Light induced current in two-dimensional (2D) layered materials emerges from mechanisms such as photothermoelectric effect, photovoltaic effect or nonlocal hot carrier transport. Semiconducting layered transition metal dichalcogenides have been studied extensively in recent years as the generation of current by light is a crucial process in optoelectronic and photovoltaic devices. However, photocurrent generation is unexpected in metallic 2D layered materials unless a photothermal mechanism is prevalent. Typically, high thermal conductivity and low absorption of the visible spectrum prevent photothermal current generation in metals. Here, we report photoresponse from two-terminal devices of mechanically exfoliated metallic 3R-NbS$_2$ thin crystals using scanning photocurrent microscopy (SPCM) both at zero and finite bias. SPCM measurements reveal that the photocurrent predominantly emerges from metal/NbS$_2$ junctions of the two-terminal device at zero bias. At finite biases, along with the photocurrent generated at metal/NbS$_2$ junctions, now a negative photoresponse from all over the NbS$_2$ crystal is evident. Among our results, we realized that the observed photocurrent can be explained by the local heating caused by the laser excitation. These findings show that NbS$_2$ is among a few metallic materials in which photocurrent generation is possible. △ Less

Submitted 8 January, 2018; v1 submitted 20 December, 2017; originally announced December 2017.

Journal ref: Phys. Rev. B 97, 195412 (2018)

Visualization of one-dimensional diffusion and spontaneous segregation of hydrogen in single crystals of VO2

Authors: T. Serkan Kasırga, Jim M. Coy, Jae H. Park, David H. Cobden

Abstract: Hydrogen intercalation in solids is common, complicated, and very difficult to monitor. In a new approach to the problem, we have studied the profile of hydrogen diffusion in single-crystal nanobeams and plates of VO2, exploiting the fact that hydrogen do** in this material leads to visible darkening near room temperature connected with the metal-insulator transition at 65 °C. We observe hydroge… ▽ More Hydrogen intercalation in solids is common, complicated, and very difficult to monitor. In a new approach to the problem, we have studied the profile of hydrogen diffusion in single-crystal nanobeams and plates of VO2, exploiting the fact that hydrogen do** in this material leads to visible darkening near room temperature connected with the metal-insulator transition at 65 °C. We observe hydrogen diffusion along the rutile c-axis but not perpendicular to it, making this a highly one-dimensional diffusion system. We obtain an activated diffusion coefficient, ~0.01 e^(-0.6 eV/k_B T) cm2sec-1, applicable in metallic phase. In addition, we observe dramatic supercooling of the hydrogen-induced metallic phase and spontaneous segregation of the hydrogen into stripes implying that the diffusion process is highly nonlinear, even in the absence of defects. Similar complications may occur in hydrogen motion in other materials but are not revealed by conventional measurement techniques. △ Less

Submitted 27 June, 2016; originally announced June 2016.

Measurement of a solid-state triple point at the metal-insulator transition in VO2

Authors: Jae Hyung Park, Jim M. Coy, T. Serkan Kasirga, Chunming Huang, Zaiyao Fei, Scott Hunter, David H. Cobden

Abstract: First-order phase transitions in solids are notoriously challenging to study. The combination of change in unit cell shape, long range of elastic distortion, and flow of latent heat leads to large energy barriers resulting in domain structure, hysteresis, and cracking. The situation is still worse near a triple point where more than two phases are involved. The famous metal-insulator transition (M… ▽ More First-order phase transitions in solids are notoriously challenging to study. The combination of change in unit cell shape, long range of elastic distortion, and flow of latent heat leads to large energy barriers resulting in domain structure, hysteresis, and cracking. The situation is still worse near a triple point where more than two phases are involved. The famous metal-insulator transition (MIT) in vanadium dioxide, a popular candidate for ultrafast optical and electrical switching applications, is a case in point. Even though VO2 is one of the simplest strongly correlated materials, experimental difficulties posed by the first-order nature of the MIT as well as the involvement of at least two competing insulating phases have led to persistent controversy about its nature. Here, we show that studying single-crystal VO2 nanobeams in a purpose-built nanomechanical strain apparatus allows investigation of this prototypical phase transition with unprecedented control and precision. Our results include the striking finding that the triple point of the metallic and two insulating phases is at the transition temperature, T_tr = T_c, which we determine to be 65.0 +- 0.1 C. The findings have profound implications for the mechanism of the MIT in VO2, but in addition they demonstrate the importance of such an approach for mastering phase transitions in many other strongly correlated materials, such as manganites and iron-based superconductors. △ Less

Submitted 21 August, 2013; originally announced August 2013.

Comments: 15 pages including figures and supplementary information

Journal ref: Nature 500, 431 (22 August 2013)

Photoresponse of a strongly correlated material determined by scanning photocurrent microscopy

Authors: T. Serkan Kasirga, Dong Sun, Jae H. Park, Jim M. Coy, Zaiyao Fei, Xiaodong Xu, David H. Cobden

Abstract: The generation of a current by light is a key process in optoelectronic and photovoltaic devices. In band semiconductors, depletion fields associated with interfaces separate long-lived photo-induced carriers. However, in systems with strong electron-electron and electron-phonon correlations it is unclear what physics will dominate the photoresponse. Here we investigate photocurrent in a vanadium… ▽ More The generation of a current by light is a key process in optoelectronic and photovoltaic devices. In band semiconductors, depletion fields associated with interfaces separate long-lived photo-induced carriers. However, in systems with strong electron-electron and electron-phonon correlations it is unclear what physics will dominate the photoresponse. Here we investigate photocurrent in a vanadium dioxide, an exemplary strongly correlated material known for its dramatic metal-insulator transition (MIT) at Tc = 68 C which could be useful for optoelectronic detection and switching up to ultraviolet wavelengths. Using scanning photocurrent microscopy (SPCM) on individual suspended VO2 nanobeams we observe photoresponse peaked at the metal-insulator boundary but extended throughout both insulating and metallic phases. We determine that the response is photo-thermal, implying efficient carrier relaxation to a local equilibrium in a manner consistent with strong correlations. Temperature dependent measurements reveal subtle phase changes within the insulating state. We further demonstrate switching of the photocurrent by optical control of the metal-insulator boundary arrangement. Our work shows the value of SPCM applied to nanoscale crystals for investigating strongly correlated materials, and the results are relevant for designing and controlling optoelectronic devices employing such materials. △ Less

Submitted 5 September, 2012; v1 submitted 4 September, 2012; originally announced September 2012.

Comments: 8 pages of manuscript plus 6 of supplementary materials