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Magnetic Properties of Short Period InGaMnAs/InGaAs Superlattices
Authors:
J. Sadowski,
R. Mathieu,
P. Svedlindh,
J. Kanski,
M. Karlsteen,
K. Swiatek,
J. Z. Domagala
Abstract:
We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12 Åor 24 Å). The nonmagnetic InGaAs spacer layers are 12 Åthick. The In content of InGaMnAs and InGaAs layers was chosen in such a way that magnetic layers were: deep poten…
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We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12 Åor 24 Å). The nonmagnetic InGaAs spacer layers are 12 Åthick. The In content of InGaMnAs and InGaAs layers was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick InGaAs nonmagnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.
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Submitted 9 July, 2002;
originally announced July 2002.
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Ferromagnetism and interlayer exchange coupling in short period (Ga,Mn)As/GaAs superlattices
Authors:
R. Mathieu,
P. Svedlindh,
J. Sadowski,
K. Swiatek,
M. Karlsteen,
J. Kanski,
L. Ilver
Abstract:
Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of non-magnetic GaAs spacer. The short period Ga$_{0.93}$Mn$_{0.07}$As/GaAs superlattices exhibit a paramagnetic-to-ferromagnetic phase transition close to 60K, for thicknesses of (Ga,Mn)As down to 23 Å. For Ga$_{0.96}$Mn$_{0.04}$As/GaAs superlattices o…
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Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of non-magnetic GaAs spacer. The short period Ga$_{0.93}$Mn$_{0.07}$As/GaAs superlattices exhibit a paramagnetic-to-ferromagnetic phase transition close to 60K, for thicknesses of (Ga,Mn)As down to 23 Å. For Ga$_{0.96}$Mn$_{0.04}$As/GaAs superlattices of similar dimensions, the Curie temperature associated with the ferromagnetic transition is found to oscillate with the thickness of non magnetic spacer. The observed oscillations are related to an interlayer exchange interaction mediated by the polarized holes of the (Ga,Mn)As layers.
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Submitted 19 June, 2002;
originally announced June 2002.
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Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties
Authors:
J. Sadowski,
R. Mathieu,
P. Svedlindh,
M. Karlsteen,
J. Kanski,
Y. Fu,
J. T. Domaga_a,
W. Szuszkiewicz,
B. Hennion,
D. K. Maude,
R. Airey,
G. Hill
Abstract:
We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 Å), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 Å). While previous reports state that GaMnAs layers thinner than 50 Åare paramagnetic in the whole Mn composition range achievable using MBE growth (up to 8% Mn), we have f…
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We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 Å), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 Å). While previous reports state that GaMnAs layers thinner than 50 Åare paramagnetic in the whole Mn composition range achievable using MBE growth (up to 8% Mn), we have found that short period superlattices exhibit a paramagnetic-to-ferromagnetic phase transition with a transition temperature which depends on both the thickness of the magnetic GaMnAs layer and the nonmagnetic GaAs spacer. The neutron scattering experiments have shown that the magnetic layers in superlattices are ferromagnetically coupled for both thin (below 50 Å) and thick (above 50 Å) GaMnAs layers.
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Submitted 14 December, 2001;
originally announced December 2001.
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Structural and magnetic properties of GaMnAs layers with high Mn content grown by Migration Enhanced Epitaxy on GaAs(100) substrates
Authors:
J. Sadowski,
R. Mathieu,
P. Svedlindh,
J. Z. Domagala,
J. Bak - Misiuk,
K. Swiatek,
M. Karlsteen,
J. Kanski,
L. Ilver,
H. Asklund,
U. Sodervall
Abstract:
We have grown the ferromagnetic semiconductor GaMnAs containing up to 10% Mn by migration enhanced epitaxy at a substrate temperature of 150^oC. The alternate supply of As2 molecules and Ga and Mn atoms made it possible to grow single crystalline GaMnAs layers at very low substrate temperature, at which conventional molecular beam epitaxial growth under excess As supply is not possible due to As…
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We have grown the ferromagnetic semiconductor GaMnAs containing up to 10% Mn by migration enhanced epitaxy at a substrate temperature of 150^oC. The alternate supply of As2 molecules and Ga and Mn atoms made it possible to grow single crystalline GaMnAs layers at very low substrate temperature, at which conventional molecular beam epitaxial growth under excess As supply is not possible due to As condensation. Secondary ion mass spectroscopy and X-ray diffraction measurements confirmed a higher Mn content in the films grown by this method in comparison to the GaMnAs layers grown by low temperature molecular beam epitaxy. The lattice constant of hypothetical zinc-blende structure MnAs is determined to be 5.9 Å, which deviates somewhat from previously reported values. This deviation is ascribed to growth-condition dependent density of point defects. It is stressed that this effect must be taken into account for any assessment of Mn content from X-ray diffraction data.
Magnetization measurements showed an onset of ferromagnetic ordering around 75 K for the GaMnAs layer with 10% Mn. This means that the trend of falling Curie temperatures with increasing Mn concentrations above 5.5% is broken.
We tentatively assign this to the variation of the carrier concentration, including contributions from donor and acceptor centers formed by antisite defects and Mn do**, and increased density of magnetically active Mn ions.
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Submitted 6 March, 2001;
originally announced March 2001.
