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Absence of the Rashba effect in undoped asymmetric quantum wells
Authors:
P. S. Eldridge,
W. J. H Leyland,
J. D. Mar,
P. G. Lagoudakis,
R. Winkler,
O. Z. Karimov,
M. Henini,
D Taylor,
R. T. Phillips,
R T Harley
Abstract:
To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction seems to offer the possibility of gate-voltage control in spintronic devices but, as the electrons are subject to both ion-core and macroscopic structural potentials, this over-simple picture has lead…
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To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction seems to offer the possibility of gate-voltage control in spintronic devices but, as the electrons are subject to both ion-core and macroscopic structural potentials, this over-simple picture has lead to intense debate. For example, an externally applied field acting on the envelope of the electron wavefunction determined by the macroscopic potential, underestimates the experimentally observed spin-orbit field by many orders of magnitude while the Ehrenfest theorem suggests that it should actually be zero. Here we challenge, both experimentally and theoretically, the widely held belief that any inversion asymmetry of the macroscopic potential, not only electric field, will produce a significant spin-orbit field for electrons. This conclusion has far-reaching consequences for the design of spintronic devices while illuminating important fundamental physics.
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Submitted 30 July, 2008;
originally announced July 2008.
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Quantum key distribution using a triggered quantum dot source emitting near 1.3 microns
Authors:
P. M. Intallura,
M. B. Ward,
O. Z. Karimov,
Z. L. Yuan,
P. See,
A. J. Shields,
P. Atkinson,
D. A. Ritchie
Abstract:
We report the distribution of a cryptographic key, secure from photon number splitting attacks, over 35 km of optical fiber using single photons from an InAs quantum dot emitting ~1.3 microns in a pillar microcavity. Using below GaAs-bandgap optical excitation, we demonstrate suppression of multiphoton emission to 10% of the Poissonian level without detector dark count subtraction. The source is…
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We report the distribution of a cryptographic key, secure from photon number splitting attacks, over 35 km of optical fiber using single photons from an InAs quantum dot emitting ~1.3 microns in a pillar microcavity. Using below GaAs-bandgap optical excitation, we demonstrate suppression of multiphoton emission to 10% of the Poissonian level without detector dark count subtraction. The source is incorporated into a phase encoded interferometric scheme implementing the BB84 protocol for key distribution over standard telecommunication optical fiber. We show a transmission distance advantage over that possible with (length-optimized) uniform intensity weak coherent pulses at 1310 nm in the same system.
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Submitted 2 October, 2007;
originally announced October 2007.
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Temperature Dependence of Rashba Spin-orbit Coupling in Quantum Wells
Authors:
P. S. Eldridge,
W. J. H. Leyland,
P. G. Lagoudakis,
O. Z. Karimov,
M. Henini,
D. Taylor,
R. T. Phillips,
R. T. Harley
Abstract:
We perform an all-optical spin-dynamic measurement of the Rashba spin-orbit interaction in (110)-oriented GaAs/AlGaAs quantum wells. The crystallographic direction of quantum confinement allows us to disentangle the contributions to spin-orbit coupling from the structural inversion asymmetry (Rashba term) and the bulk inversion asymmetry. We observe an unexpected temperature dependence of the Ra…
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We perform an all-optical spin-dynamic measurement of the Rashba spin-orbit interaction in (110)-oriented GaAs/AlGaAs quantum wells. The crystallographic direction of quantum confinement allows us to disentangle the contributions to spin-orbit coupling from the structural inversion asymmetry (Rashba term) and the bulk inversion asymmetry. We observe an unexpected temperature dependence of the Rashba spin-orbit interaction strength that signifies the importance of the usually neglected higher-order terms of the Rashba coupling.
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Submitted 30 July, 2007;
originally announced July 2007.
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High temperature gate control of quantum well spin memory
Authors:
O. Z. Karimov,
G. H. John,
R. T. Harley,
W. H. Lau,
M. E. Flatte,
M. Henini,
R. Airey
Abstract:
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field-independent below 20 kV cm-1 reflecting quantum well interfac…
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Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field-independent below 20 kV cm-1 reflecting quantum well interface asymmetry. The results indicate the achievability of voltage-gateable spin-memory time longer than 3 ns simultaneously with high electron mobility.
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Submitted 16 May, 2003;
originally announced May 2003.
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D'yakonov-Perel' spin relaxation under electron-electron collisions in n-type QWs
Authors:
M. M. Glazov,
E. L. Ivchenko,
M. A. Brand,
O. Z. Karimov,
R. T. Harley
Abstract:
The D'yakonov-Perel' spin relaxation mechanism in n-doped GaAs/AlGaAs quantum wells (QWs) has been studied both theoretically and experimentally. The temperature dependence of the spin relaxation time has been calculated for arbitrary degeneracy of the 2D electron gas. The comparison between theory and experiment shows that, in high-mobility n-doped QWs, the studied spin decoherence is controlle…
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The D'yakonov-Perel' spin relaxation mechanism in n-doped GaAs/AlGaAs quantum wells (QWs) has been studied both theoretically and experimentally. The temperature dependence of the spin relaxation time has been calculated for arbitrary degeneracy of the 2D electron gas. The comparison between theory and experiment shows that, in high-mobility n-doped QWs, the studied spin decoherence is controlled by electron-electron collisions.
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Submitted 12 May, 2003;
originally announced May 2003.
