Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
Authors:
L. Spindlberger,
A. Csóré,
G. Thiering,
S. Putz,
R. Karhu,
J. Ul Hassan,
N. T. Son,
T. Fromherz,
A. Gali,
M. Trupke
Abstract:
We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and ab initio density functional supercell calculations enable unequivocal site assignment and shed light on the spectral features of the defects. We con…
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We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and ab initio density functional supercell calculations enable unequivocal site assignment and shed light on the spectral features of the defects. We conclude with a brief outlook on applications in quantum photonics.
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Submitted 7 February, 2019; v1 submitted 16 January, 2019;
originally announced January 2019.
High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
Authors:
Roland Nagy,
Matthias Niethammer,
Matthias Widmann,
Yu-Chen Chen,
Péter Udvarhelyi,
Cristian Bonato,
Jawad Ul Hassan,
Robin Karhu,
Ivan G. Ivanov,
Nguyen Tien Son,
Jeronimo R. Maze,
Takeshi Ohshima,
Öney O. Soykal,
Ádám Gali,
Sang-Yun Lee,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding optical and spin properties of single silicon vacancy centres in silicon carbide. Despite the lack of inversion symmetry, the system's particular wave…
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Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding optical and spin properties of single silicon vacancy centres in silicon carbide. Despite the lack of inversion symmetry, the system's particular wave function symmetry decouples its optical properties from magnetic and electric fields, as well as from local strain. This provides a high-fidelity spin-to-photon interface with exceptionally stable and narrow optical transitions, low inhomogeneous broadening, and a large fraction of resonantly emitted photons. Further, the weak spin-phonon coupling results in electron spin coherence times comparable with nitrogen-vacancy centres in diamond. This allows us to demonstrate coherent hyperfine coupling to single nuclear spins, which can be exploited as qubit memories. Our findings promise quantum network applications using integrated semiconductor-based spin-to-photon interfaces.
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Submitted 24 October, 2018;
originally announced October 2018.
