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Electron density control in tungsten diselenide monolayers via photochlorination
Authors:
E. Katsipoulaki,
G. Vailakis,
I. Demeridou,
D. Karfaridis,
P. Patsalas,
K. Watanabe,
T. Taniguchi,
I. Paradisanos,
G. Kopidakis,
G. Kioseoglou,
E. Stratakis
Abstract:
Modulation of the Fermi level using an ultraviolet (UV)-assisted photochemical method is demonstrated in tungsten diselenide monolayers. Systematic shifts and relative intensities between charged and neutral exciton species indicate a progressive and controllable decrease of the electron density and switch tungsten diselenide from n-type to a p-type semiconductor. The presence of chlorine in the 2…
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Modulation of the Fermi level using an ultraviolet (UV)-assisted photochemical method is demonstrated in tungsten diselenide monolayers. Systematic shifts and relative intensities between charged and neutral exciton species indicate a progressive and controllable decrease of the electron density and switch tungsten diselenide from n-type to a p-type semiconductor. The presence of chlorine in the 2D crystal shifts the Fermi level closer to the valence band while the effect can be only partially reversible via continuous wave laser rastering process. The presence of chlorine species in the lattice is validated by X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations predict that adsorption of chlorine on the selenium vacancy sites leads to p-type do**. The results of our study indicate that photochemical techniques have the potential to enhance the performance of various 2D materials, making them suitable for potential applications in optoelectronics.
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Submitted 11 May, 2023;
originally announced May 2023.
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THz emission from Fe/Pt spintronic emitters with L1$_{0}$-FePt alloyed interface
Authors:
Laura Scheuer,
Moritz Ruhwedel,
Dimitris Karfaridis,
Isaak G. Vasileiadis,
Dominik Sokoluk,
Garik Torosyan,
George Vourlias,
George P. Dimitrakopoulos,
Marco Rahm,
Burkard Hillebrands,
Thomas Kehagias,
René Beigang,
Evangelos Th. Papaioannou
Abstract:
Recent developments in nanomagnetism and spintronics have enabled the use of ultrafast spin physics for terahertz (THz) emission. Spintronic THz emitters, consisting of ferromagnetic FM / non-magnetic (NM) thin film heterostructures, have demonstrated impressive properties for the use in THz spectroscopy and have great potential in scientific and industrial applications. In this work, we focus on…
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Recent developments in nanomagnetism and spintronics have enabled the use of ultrafast spin physics for terahertz (THz) emission. Spintronic THz emitters, consisting of ferromagnetic FM / non-magnetic (NM) thin film heterostructures, have demonstrated impressive properties for the use in THz spectroscopy and have great potential in scientific and industrial applications. In this work, we focus on the impact of the FM/NM interface on the THz emission by investigating Fe/Pt bilayers with engineered interfaces. In particular, we intentionally modify the Fe/Pt interface by inserting an ordered L1$_{0}$-FePt alloy interlayer. Subsequently, we establish that a Fe/L1$_{0}$-FePt (2\,nm)/Pt configuration is significantly superior to a Fe/Pt bilayer structure, regarding THz emission amplitude. The latter depends on the extent of alloying on either side of the interface. The unique trilayer structure opens new perspectives in terms of material choices for the next generation of spintronic THz emitters.
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Submitted 1 April, 2022;
originally announced April 2022.
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Determination of the spin Hall angle in single-crystalline Pt films from spin pum** experiments
Authors:
Sascha Keller,
Laura Mihalceanu,
Matthias R. Schweizer,
Philipp Lang,
Björn Heinz,
Moritz Geilen,
Thomas Brächer,
Philipp Pirro,
Thomas Meyer,
Andres Conca,
Dimitrios Karfaridis,
George Vourlias,
Thomas Kehagias,
Burkard Hillebrands,
Evangelos Th. Papaioannou
Abstract:
We report on the determination of the spin Hall angle and the identification of the role of the interface roughness for the inverse spin Hall effect (ISHE) in ultra-clean, defect-reduced epitaxial Pt films. By applying vector network analyzer ferromagnetic resonance spectroscopy to a series of single crystalline Fe (12 nm) /Pt (t$_\text{Pt}$) bilayers we determine the real part of the spin mixing…
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We report on the determination of the spin Hall angle and the identification of the role of the interface roughness for the inverse spin Hall effect (ISHE) in ultra-clean, defect-reduced epitaxial Pt films. By applying vector network analyzer ferromagnetic resonance spectroscopy to a series of single crystalline Fe (12 nm) /Pt (t$_\text{Pt}$) bilayers we determine the real part of the spin mixing conductance $(4.4\:\pm\:0.2)\cdot 10^{19}\: $m$^{-2}$ and reveal a very small spin diffusion length in the epitaxial Pt $(1.1\:\pm\:0.1)$ nm film. We investigate the spin pum** and ISHE in a stripe microstucture excited by a microwave coplanar waveguide (CPW) antenna. By using their different angular dependencies, we distinguish between spin rectification effects and the inverse spin Hall effect. The relatively large value of the spin Hall angle $(5.7 \pm 1.4)\: \% $ hints that interface engineering by epitaxially grown non-magnetic materials can increase the spin-to-charge current conversion efficiency.
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Submitted 4 April, 2018; v1 submitted 14 December, 2017;
originally announced December 2017.
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Spin-pum** through a varying-thickness MgO interlayer in Fe/Pt system
Authors:
Laura Mihalceanu,
Sascha Keller,
Jochen Greser,
Dimitrios Karfaridis,
Konstantinos Symeonidis,
Georgios Vourlias,
Thomas Kehagias,
Andres Conca,
Burkard Hillebrands,
Evangelos Th. Papaioannou
Abstract:
The spin-pum** mechanism is probed through a tunnelling MgO interlayer in Fe/Pt bilayers. We show by ferromagnetic resonance technique and spin-pum** experiments that spin currents can tunnel through the MgO interlayer for thickness up to 2~{nm} and can produce significant voltages in the Pt layer. The electrical detection of spin-pum** furthermore reveals the critical role of rectification…
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The spin-pum** mechanism is probed through a tunnelling MgO interlayer in Fe/Pt bilayers. We show by ferromagnetic resonance technique and spin-pum** experiments that spin currents can tunnel through the MgO interlayer for thickness up to 2~{nm} and can produce significant voltages in the Pt layer. The electrical detection of spin-pum** furthermore reveals the critical role of rectification and shunting effects on the generated voltages. The non zero spin current transport through a few monolayers of an insulating interlayer might initiate further studies on the role of very thin oxides in spin-pum** experiments.
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Submitted 17 February, 2017;
originally announced February 2017.
