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Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Authors:
Changyun Yoo,
Kenneth W. West,
Loren N. Pfeiffer,
Chris A. Curwen,
Jonathan H. Kawamura,
Boris S. Karasik,
Mark S. Sherwin
Abstract:
We present a reliable flip-chip technique for dual-side processing of thin (<1 micron) high-mobility GaAs/AlGaAs epitaxial layers. The technique allows the fabrication of small (micron-scale with standard UV photolithography) patterned back gates and dual-gate structures on the thin GaAs/AlGaAs films with good alignment accuracy using only frontside alignment. The technique preserves the high-mobi…
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We present a reliable flip-chip technique for dual-side processing of thin (<1 micron) high-mobility GaAs/AlGaAs epitaxial layers. The technique allows the fabrication of small (micron-scale with standard UV photolithography) patterned back gates and dual-gate structures on the thin GaAs/AlGaAs films with good alignment accuracy using only frontside alignment. The technique preserves the high-mobility (>10^6 cm^2 /V-s at 2 K) and most (>95%) of the charge density of the 2-dimensional electron gas (2DEG) systems, and allows linear control of the charge density with small (< 1 V) electrostatic gate bias. Our technique is motivated by a novel THz quantum-well detector based on intersubband transitions in a single, wide GaAs/AlGaAs quantum well, in which a symmetric, well-aligned dual-gate structure (with a typical gate dimension of ~5 micron by 5 micron) is required for accurate and precise tuning of the THz detection frequency. Using our Indium-Bond-And-Stop-Etch (IBASE) technique, we realize such dual-gate structure on 660-nm thick GaAs/AlGaAs epitaxial layers that contain a modulation-doped, 40-nm wide, single square quantum well. By independently controlling the charge density and the DC electric field set between the gates, we demonstrate robust tuning of the intersubband absorption behavior of the 40-nm quantum well near 3.44 THz at 30 K.
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Submitted 21 February, 2023;
originally announced February 2023.
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Demonstration of a Tunable Antenna-Coupled Intersubband Terahertz (TACIT) Mixer
Authors:
Changyun Yoo,
Mengchen Huang,
Jonathan Kawamura,
Kenneth West,
Loren Pfeiffer,
Boris Karasik,
Mark Sherwin
Abstract:
A fast, voltage-tunable terahertz mixer based on the intersubband transition of a high-mobility 2-dimensional electron gas (2DEG) has been fabricated from a single 40 nm GaAs-AlGaAs square quantum well heterostructure. The device is called a Tunable Antenna-Coupled Intersubband Terahertz (TACIT) mixer, and shows tunability of the detection frequency from 2.52 THz to 3.11 THz with small (< 1 V) top…
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A fast, voltage-tunable terahertz mixer based on the intersubband transition of a high-mobility 2-dimensional electron gas (2DEG) has been fabricated from a single 40 nm GaAs-AlGaAs square quantum well heterostructure. The device is called a Tunable Antenna-Coupled Intersubband Terahertz (TACIT) mixer, and shows tunability of the detection frequency from 2.52 THz to 3.11 THz with small (< 1 V) top gate and back gate voltage biases. Mixing at 2.52 THz has been observed at 60 K with a -3dB intermediate frequency (IF) bandwidth exceeding 6 GHz.
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Submitted 3 October, 2019;
originally announced October 2019.
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Room Temperature, Quantum-Limited THz Heterodyne Detection? Not Yet
Authors:
J. Zmuidzinas,
B. Karasik,
A. R. Kerr,
M. Pospieszalski
Abstract:
In their article, Wang et al. [1] report a new scheme for THz heterodyne detection using a laser-driven LTG-GaAs photomixer [2, 3] and make the impressive claim of achieving near quantum-limited sensitivity at room temperature. Unfortunately, their experimental methodology is incorrect, and furthermore the paper provides no information on the mixer conversion loss, an important quantity that could…
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In their article, Wang et al. [1] report a new scheme for THz heterodyne detection using a laser-driven LTG-GaAs photomixer [2, 3] and make the impressive claim of achieving near quantum-limited sensitivity at room temperature. Unfortunately, their experimental methodology is incorrect, and furthermore the paper provides no information on the mixer conversion loss, an important quantity that could readily have been measured and reported as a consistency check. The paper thus offers no reliable experimental evidence that substantiates the claimed sensitivities. To the contrary, the very high value reported for their photomixer impedance strongly suggests that the conversion loss is quite poor and that the actual sensitivity is far worse than claimed.
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Submitted 30 July, 2019;
originally announced July 2019.
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Normal Metal Hot-Electron Nanobolometer with Johnson Noise Thermometry Readout
Authors:
Boris S. Karasik,
Christopher B. McKitterick,
Theodore J. Reck,
Daniel E. Prober
Abstract:
The sensitivity of a THz hot-electron nanobolometer (nano-HEB) made from a normal metal is analyzed. Johnson Noise Thermometry (JNT) is employed as a readout technique. In contrast to its superconducting TES counterpart, the normal-metal nano-HEB can operate at any cryogenic temperature depending on the required radiation background limited Noise Equivalent Power (NEP). It does not require bias li…
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The sensitivity of a THz hot-electron nanobolometer (nano-HEB) made from a normal metal is analyzed. Johnson Noise Thermometry (JNT) is employed as a readout technique. In contrast to its superconducting TES counterpart, the normal-metal nano-HEB can operate at any cryogenic temperature depending on the required radiation background limited Noise Equivalent Power (NEP). It does not require bias lines; 100s of nano-HEBs can be read by a single low-noise X-band amplifier via a filter bank channelizer. The modeling predicts that even with the sensitivity penalty due to the amplifier noise, an NEP ~ 10$^{-20}$ - 10$^{-19}$ W/Hz$^{1/2}$ can be expected at 50-100 mK in 10-20 nm thin titanium (Ti) normal metal HEBs with niobium (Nb) contacts. This NEP is fairly constant over a range of readout frequencies ~ 10 GHz. Although materials with weaker electron-phonon coupling (bismuth, graphene) do not improve the minimum achievable NEP, they can be considered if a larger than 10 GHz readout bandwidth is required.
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Submitted 4 November, 2014;
originally announced November 2014.
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Tunable Antenna Coupled Intersubband Terahertz Detector
Authors:
Nutan Gautam,
Jonathan Kawamura,
Nacer Chahat,
Boris Karasik,
Paolo Focardi,
Samuel Gulkis,
Loren Pfeiffer,
Mark Sherwin
Abstract:
We report on the development of a tunable antenna coupled intersubband terahertz (TACIT) detector based on GaAs/AlGaAs two dimensional electron gas. A successful device design and micro-fabrication process have been developed which maintain the high mobility (1.1x106 cm2/V-s at 10K) of a 2DEG channel in the presence of a highly conducting backgate. Gate voltage-controlled device resistance and dir…
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We report on the development of a tunable antenna coupled intersubband terahertz (TACIT) detector based on GaAs/AlGaAs two dimensional electron gas. A successful device design and micro-fabrication process have been developed which maintain the high mobility (1.1x106 cm2/V-s at 10K) of a 2DEG channel in the presence of a highly conducting backgate. Gate voltage-controlled device resistance and direct THz sensing has been observed. The goal is to operate as a nearly quantum noise limited heterodyne sensor suitable for passively-cooled space platforms.
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Submitted 20 October, 2014;
originally announced October 2014.
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Monolayer graphene bolometer as a sensitive far-IR detector
Authors:
Boris S. Karasik,
Christopher B. McKitterick,
Daniel E. Prober
Abstract:
In this paper we give a detailed analysis of the expected sensitivity and operating conditions in the power detection mode of a hot-electron bolometer (HEB) made from a few μm$^2$ of monolayer graphene (MLG) flake which can be embedded into either a planar antenna or waveguide circuit via NbN (or NbTiN) superconducting contacts with critical temperature ~ 14 K. Recent data on the strength of the e…
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In this paper we give a detailed analysis of the expected sensitivity and operating conditions in the power detection mode of a hot-electron bolometer (HEB) made from a few μm$^2$ of monolayer graphene (MLG) flake which can be embedded into either a planar antenna or waveguide circuit via NbN (or NbTiN) superconducting contacts with critical temperature ~ 14 K. Recent data on the strength of the electron-phonon coupling are used in the present analysis and the contribution of the readout noise to the Noise Equivalent Power (NEP) is explicitly computed. The readout scheme utilizes Johnson Noise Thermometry (JNT) allowing for Frequency-Domain Multiplexing (FDM) using narrowband filter coupling of the HEBs. In general, the filter bandwidth and the summing amplifier noise have a significant effect on the overall system sensitivity. The analysis shows that the readout contribution can be reduced to that of the bolometer phonon noise if the detector device is operated at 0.05 K and the JNT signal is read at about 10 GHz where the Johnson noise emitted in equilibrium is substantially reduced. Beside the high sensitivity (NEP < 10$^{-20}$ W/Hz$^{1/2}$, this bolometer does not have any hard saturation limit and thus can be used for far-IR sky imaging with arbitrary contrast. By changing the operating temperature of the bolometer the sensitivity can be fine tuned to accommodate the background photon flux in a particular application. By using a broadband low-noise kinetic inductance parametric amplifier, ~100s of graphene HEBs can be read simultaneously without saturation of the system output.
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Submitted 24 June, 2014;
originally announced June 2014.
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Prospective performance of graphene HEB for ultrasensitive detection of sub-mm radiation
Authors:
Boris S. Karasik,
Christopher B. McKitterick,
Daniel E. Prober
Abstract:
Noise Equivalent Power and time constant of a submillimeter wave Hot-Electron Bolometer (HEB) made from monolayer graphene are analyzed using the lowest electron-phonon thermal conductance data reported to date. Frequency-domain multiplexed Johnson Noise Thermometry (JNT) is used for the detector readout. Planar microantennas or waveguides can provide efficient coupling of the graphene microdevice…
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Noise Equivalent Power and time constant of a submillimeter wave Hot-Electron Bolometer (HEB) made from monolayer graphene are analyzed using the lowest electron-phonon thermal conductance data reported to date. Frequency-domain multiplexed Johnson Noise Thermometry (JNT) is used for the detector readout. Planar microantennas or waveguides can provide efficient coupling of the graphene microdevice to radiation. The results show that the graphene HEB detector can be radiation background limited at very low level corresponding to the photon noise on a space telescope with cryogenically cooled mirror. Beside the high sensitivity, absence of a hard power saturation limit, higher operating temperature, and the ability to read 1000s of elements with a single broadband amplifier will be the advantages of such a detector.
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Submitted 16 January, 2014;
originally announced January 2014.
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Graphene microbolometers with superconducting contacts for terahertz photon detection
Authors:
Christopher B. McKitterick,
Heli Vora,
Xu Du,
Boris S. Karasik,
Daniel E. Prober
Abstract:
We report on noise and thermal conductance measurements taken in order to determine an upper bound on the performance of graphene as a terahertz photon detector. The main mechanism for sensitive terahertz detection in graphene is bolometric heating of the electron system. To study the properties of a device using this mechanism to detect terahertz photons, we perform Johnson noise thermometry meas…
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We report on noise and thermal conductance measurements taken in order to determine an upper bound on the performance of graphene as a terahertz photon detector. The main mechanism for sensitive terahertz detection in graphene is bolometric heating of the electron system. To study the properties of a device using this mechanism to detect terahertz photons, we perform Johnson noise thermometry measurements on graphene samples. These measurements probe the electron-phonon behavior of graphene on silicon dioxide at low temperatures. Because the electron-phonon coupling is weak in graphene, superconducting contacts with large gap are used to confine the hot electrons and prevent their out-diffusion. We use niobium nitride leads with a $T_\mathrm{c}\approx 10$ K to contact the graphene. We find these leads make good ohmic contact with very low contact resistance. Our measurements find an electron-phonon thermal conductance that depends quadratically on temperature above 4 K and is compatible with single terahertz photon detection.
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Submitted 18 July, 2013;
originally announced July 2013.
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Performance of Graphene Thermal Photon Detectors
Authors:
Chris B. McKitterick,
Daniel E. Prober,
Boris S. Karasik
Abstract:
We analyze the performance of graphene microstructures as thermal photon detectors and deduce the range of parameters that define a linear response. The saturation effects of a graphene thermal detector that operates beyond the linear range are described in detail for a single-photon detector (calorimeter). We compute the effect of operating beyond this linear range and find that sensitive detecti…
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We analyze the performance of graphene microstructures as thermal photon detectors and deduce the range of parameters that define a linear response. The saturation effects of a graphene thermal detector that operates beyond the linear range are described in detail for a single-photon detector (calorimeter). We compute the effect of operating beyond this linear range and find that sensitive detection occurs for such non-linear operation. We identify the optimum conditions and find that single-photon detection at terahertz (THz) frequencies should be feasible.
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Submitted 27 November, 2012; v1 submitted 19 October, 2012;
originally announced October 2012.
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Nanobolometers for THz Photon Detection
Authors:
Boris S. Karasik,
Andrei V. Sergeev,
Daniel E. Prober
Abstract:
This article reviews the state of rapidly emerging terahertz hot-electron nanobolometers (nano-HEB), which are currently among of the most sensitive radiation power detectors at submillimeter wavelengths. With the achieved noise equivalent power close to 10^{-19} W/Hz^{1/2} and potentially capable of approaching NEP ~ 10^{-20} W/Hz^{1/2}, nano-HEBs are very important for future space astrophysics…
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This article reviews the state of rapidly emerging terahertz hot-electron nanobolometers (nano-HEB), which are currently among of the most sensitive radiation power detectors at submillimeter wavelengths. With the achieved noise equivalent power close to 10^{-19} W/Hz^{1/2} and potentially capable of approaching NEP ~ 10^{-20} W/Hz^{1/2}, nano-HEBs are very important for future space astrophysics platforms with ultralow submillimeter radiation background. The ability of these sensors to detect single low-energy photons opens interesting possibilities for quantum calorimetry in the mid-infrared and even in the farinfrared parts of the electromagnetic spectrum. We discuss the competition in the field of ultrasensitive detectors, the physics and technology of nano-HEBs, recent experimental results, and perspectives for future development.
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Submitted 28 August, 2012;
originally announced August 2012.
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Energy-resolved detection of single infrared photons with λ = 8 μm using a superconducting microbolometer
Authors:
Boris S. Karasik,
Sergey V. Pereverzev,
Alexander Soibel,
Daniel F. Santavicca,
Daniel E. Prober,
David Olaya,
Michael E. Gershenson
Abstract:
We report on the detection of single photons with λ = 8 μm using a superconducting hot-electron microbolometer. The sensing element is a titanium transition-edge sensor with a volume ~ 0.1 μm^3 fabricated on a silicon substrate. Poisson photon counting statistics including simultaneous detection of 3 photons was observed. The width of the photon-number peaks was 0.11 eV, 70% of the photon energy,…
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We report on the detection of single photons with λ = 8 μm using a superconducting hot-electron microbolometer. The sensing element is a titanium transition-edge sensor with a volume ~ 0.1 μm^3 fabricated on a silicon substrate. Poisson photon counting statistics including simultaneous detection of 3 photons was observed. The width of the photon-number peaks was 0.11 eV, 70% of the photon energy, at 50-100 mK. This achieved energy resolution is one of the best figures reported so far for superconducting devices. Such devices can be suitable for single photon calorimetric spectroscopy throughout the mid-infrared and even the far-infrared.
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Submitted 20 July, 2012; v1 submitted 9 July, 2012;
originally announced July 2012.
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Optical NEP in Hot-Electron Nanobolometers
Authors:
Boris S. Karasik,
Robin Cantor
Abstract:
For the first time, we have measured the optical noise equivalent power (NEP) in titanium (Ti) superconducting hot-electron nanobolometers (nano-HEBs). The bolometers were 2μmx1μmx20nm and 1μmx1μmx20nm planar antenna-coupled devices. The measurements were done at λ = 460 μm using a cryogenic black body radiation source delivering optical power from a fraction of a femtowatt to a few 100s of femtow…
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For the first time, we have measured the optical noise equivalent power (NEP) in titanium (Ti) superconducting hot-electron nanobolometers (nano-HEBs). The bolometers were 2μmx1μmx20nm and 1μmx1μmx20nm planar antenna-coupled devices. The measurements were done at λ = 460 μm using a cryogenic black body radiation source delivering optical power from a fraction of a femtowatt to a few 100s of femtowatts. A record low NEP = 3x10^{-19} W/Hz^{1/2} at 50 mK has been achieved. This sensitivity meets the requirements for SAFARI instrument on the SPICA telescope. The ways for further improvement of the nano-HEB detector sensitivity are discussed.
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Submitted 23 September, 2010;
originally announced September 2010.
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Energy resolution of terahertz single-photon-sensitive bolometric detectors
Authors:
D. F. Santavicca,
B. Reulet,
B. S. Karasik,
S. V. Pereverzev,
D. Olaya,
M. E. Gershenson,
L. Frunzio,
D. E. Prober
Abstract:
We report measurements of the energy resolution of ultra-sensitive superconducting bolometric detectors. The device is a superconducting titanium nanobridge with niobium contacts. A fast microwave pulse is used to simulate a single higher-frequency photon, where the absorbed energy of the pulse is equal to the photon energy. This technique allows precise calibration of the input coupling and avo…
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We report measurements of the energy resolution of ultra-sensitive superconducting bolometric detectors. The device is a superconducting titanium nanobridge with niobium contacts. A fast microwave pulse is used to simulate a single higher-frequency photon, where the absorbed energy of the pulse is equal to the photon energy. This technique allows precise calibration of the input coupling and avoids problems with unwanted background photons. Present devices have an intrinsic full-width at half-maximum energy resolution of approximately 23 terahertz, near the predicted value due to intrinsic thermal fluctuation noise.
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Submitted 1 March, 2010; v1 submitted 5 June, 2009;
originally announced June 2009.
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Ultra-Sensitive Hot-Electron Nanobolometers for Terahertz Astrophysics
Authors:
Jian Wei,
David Olaya,
Boris Karasik,
Sergey Pereverzev,
Andrei Sergeev,
Michael Gershenson
Abstract:
The background-limited spectral imaging of the early Universe requires spaceborne terahertz (THz) detectors with the sensitivity 2-3 orders of magnitude better than that of the state-of-the-art bolometers. To realize this sensitivity without sacrificing operating speed, novel detector designs should combine an ultrasmall heat capacity of a sensor with its unique thermal isolation. Quantum effect…
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The background-limited spectral imaging of the early Universe requires spaceborne terahertz (THz) detectors with the sensitivity 2-3 orders of magnitude better than that of the state-of-the-art bolometers. To realize this sensitivity without sacrificing operating speed, novel detector designs should combine an ultrasmall heat capacity of a sensor with its unique thermal isolation. Quantum effects in thermal transport at nanoscale put strong limitations on the further improvement of traditional membrane-supported bolometers. Here we demonstrate an innovative approach by develo** superconducting hot-electron nanobolometers in which the electrons are cooled only due to a weak electron-phonon interaction. At T<0.1K, the electron-phonon thermal conductance in these nanodevices becomes less than one percent of the quantum of thermal conductance. The hot-electron nanobolometers, sufficiently sensitive for registering single THz photons, are very promising for submillimeter astronomy and other applications based on quantum calorimetry and photon counting.
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Submitted 29 October, 2007;
originally announced October 2007.
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Millisecond Electron-Phonon Relaxation in Ultrathin Disordered Metal Films at Millikelvin Temperatures
Authors:
M. E. Gershenson,
D. Gong,
T. Sato,
B. S. Karasik,
A. V. Sergeev
Abstract:
We have measured directly the thermal conductance between electrons and phonons in ultra-thin Hf and Ti films at millikelvin temperatures. The experimental data indicate that electron-phonon coupling in these films is significantly suppressed by disorder. The electron cooling time $τ_ε$ follows the $T^{-4}$-dependence with a record-long value $τ_ε=25ms$ at $T=0.04K$. The hot-electron detectors o…
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We have measured directly the thermal conductance between electrons and phonons in ultra-thin Hf and Ti films at millikelvin temperatures. The experimental data indicate that electron-phonon coupling in these films is significantly suppressed by disorder. The electron cooling time $τ_ε$ follows the $T^{-4}$-dependence with a record-long value $τ_ε=25ms$ at $T=0.04K$. The hot-electron detectors of far-infrared radiation, fabricated from such films, are expected to have a very high sensitivity. The noise equivalent power of a detector with the area $1\mum^2$ would be $(2-3)10^{-20}W/Hz^{1/2}$, which is two orders of magnitude smaller than that of the state-of-the-art bolometers.
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Submitted 4 April, 2001;
originally announced April 2001.
