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Exploring the effect of varying regime of ion fluence on optical and surface electronic properties of CVD Grown Graphene
Authors:
Tanmay Mahanta,
Sanjeev Kumar,
D. Kanjilal,
Tanuja Mohanty
Abstract:
In this work, the effect of the ion fluence-dependent defect formation on the modification of surface electronic and optical properties of graphene has been investigated. The chemical vapor deposited (CVD) graphene was irradiated with swift heavy ion (SHI) (70 MeV Si+5) beam at different fluence to study the defect formation mechanism and the role of it in modulating its surface electronic propert…
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In this work, the effect of the ion fluence-dependent defect formation on the modification of surface electronic and optical properties of graphene has been investigated. The chemical vapor deposited (CVD) graphene was irradiated with swift heavy ion (SHI) (70 MeV Si+5) beam at different fluence to study the defect formation mechanism and the role of it in modulating its surface electronic property such as work function. At low ion dose, acceptor do** via vacancy creation was observed; whereas dense electronic excitation dominated extended defects was realized at higher dose, which subsequently transforms the crystalline graphene into amorphous carbon. The results from UV-Vis spectroscopy, Raman spectroscopy and scanning Kelvin probe microscopy (SKPM) support the fact. Thus a new pathway of transformation of graphene under SHI irradiation was explored where ion dose could be the main factor to realize several effects in graphene.
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Submitted 12 June, 2022; v1 submitted 16 September, 2020;
originally announced September 2020.
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Thermoelectric Properties of GaN with Carrier Concentration Modulation: An Experimental and Theoretical Investigation
Authors:
Ashish Kumar,
Saurabh Singh,
Ashutosh Patel,
K. Asokan,
D. Kanjilal
Abstract:
The present work investigates the less explored thermoelectric properties of n-type GaN semiconductors by combined both the experimental and computational tools. Seebeck coefficients of epitaxial thin films of GaN were experimentally measured in the wide temperature range from 77 K to 650 K in steps of ~10 K covering both low and high-temperature regimes as a function of carrier concentration 2 x1…
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The present work investigates the less explored thermoelectric properties of n-type GaN semiconductors by combined both the experimental and computational tools. Seebeck coefficients of epitaxial thin films of GaN were experimentally measured in the wide temperature range from 77 K to 650 K in steps of ~10 K covering both low and high-temperature regimes as a function of carrier concentration 2 x1016, 2 x 1017, 4 x 1017 and 8 x 1017 cm-3. The measured Seebeck coefficient at room temperature was found to be highest, -374 microV/K, at the lowest concentration of 4 x 1016 cm-3 and decreases in magnitude monotonically (-327.6 microV/K, -295 microV/K, -246 microV/K for 2 x 1017, 4 x 1017, 8 x 1017 cm-3, respectively) as the carrier concentration of samples increases. Seebeck coefficient remains negative in the entire temperature range under study indicate that electrons are dominant carriers. To understand the temperature-dependent behavior, we have also carried out the electronic structure, and transport coefficients calculations by using Tran-Blaha modified Becke-Johnson (TB-mBJ) potential, and semiclassical Boltzmann transport theory implemented in WIEN2k and BoltzTraP code, respectively. The experimentally observed carrier concentrations were used in the calculations. The estimated results obtained under constant relaxation time approximations provide a very good agreement between theoretical and experimental data of Seebeck coefficients in the temperature range of 260 to 625 K.
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Submitted 26 August, 2020;
originally announced August 2020.
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Wide range temperature-dependent (80-630 K) study of Hall effect and the Seebeck coefficient of \b{eta}-Ga2O3 single crystals
Authors:
Ashish Kumar,
Saurabh Singh,
Bhera Ram Tak,
Ashutosh Patel,
K. Asokan,
D. Kanjilal
Abstract:
Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a strategic material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{…
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Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a strategic material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{eta}-Ga2O3 in a wide temperature range (80-630 K). The non-monotonic trend with large magnitude and negative sign in the entire temperature range shows electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and presence of low, mid, and high-frequency phonon modes, respectively. Temperature dependent (90-350 K) Hall effect measurement was carried out as supplementary study. Hall mobility showed T1.12 for T less than 135 K and T-0.70 for T more than 220 K. Activation energies from Seebeck coefficient and conductivity analysis revealed presence of inter band conduction due to impurity defects. The room temperature Seebeck coefficient, power factor and thermal conductivity were found as 68.57 microV/K, 0.15 microW/K2cm and 14.2 W/mK, respectively. The value of the figure-of-merit for \b{eta}-Ga2O3 was found to be aprox. 0.01 (300 K).
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Submitted 13 August, 2020;
originally announced August 2020.
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Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation
Authors:
Vishal Kumar Aggarwal,
Ankita Ghatak,
Dinakar Kanjilal,
Debdulal Kabiraj,
Achintya Singha,
Sandip Bysakh,
Samar Kumar Medda,
Supriya Chakraborty,
A. K. Raychaudhuri
Abstract:
The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energy 200 keV were implanted. The implanted wafer was subjected to Rapid Thermal Annealing to 650 C. The resulting wafer has a top crystalline Ge layer of 220 nm thickness and Buried Oxide layer (BOX) layer of good quality c…
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The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energy 200 keV were implanted. The implanted wafer was subjected to Rapid Thermal Annealing to 650 C. The resulting wafer has a top crystalline Ge layer of 220 nm thickness and Buried Oxide layer (BOX) layer of good quality crystalline Germanium oxide with thickness around 0.62 micron. The crystalline BOX layer has hexagonal crystal structure with lattice constants close to the standard values. Raman Spectroscopy, cross-sectional HRTEM with SAED and EDS established that the top Ge layer was recrystallized during annealing with faceted crystallites. The top layer has a small tensile strain of around +0.4\% and has estimated dislocation density of 2.7 x 10^{7}cm^{-2}. The thickness, crystallinity and electrical characteristics of the top layer and the quality of the BOX layer of GeO_{2} are such that it can be utilized for device fabrication.
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Submitted 11 July, 2020;
originally announced July 2020.
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High spin states of $^{204}$At: isomeric states and shears band structure
Authors:
D. Kanjilal,
S. K. Dey,
S. S. Bhattacharjee,
A. Bisoi,
M. Das,
C. C. Dey,
S. Nag,
R. Palit,
S. Ray,
S. Saha,
J. Sethi,
S. Saha
Abstract:
High-spin states of neutron deficient Trans-Lead nucleus $^{204}$At were populated up to $\sim 8\,{\rm MeV}$ excitation through the $^{12}$C + $^{197}$Au fusion evaporation reaction. Decay of the associated levels through prompt and delayed $γ$-ray emissions were studied to evaluate the underlying nuclear structure. The level scheme, which was partly known, was extended further. An isomeric…
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High-spin states of neutron deficient Trans-Lead nucleus $^{204}$At were populated up to $\sim 8\,{\rm MeV}$ excitation through the $^{12}$C + $^{197}$Au fusion evaporation reaction. Decay of the associated levels through prompt and delayed $γ$-ray emissions were studied to evaluate the underlying nuclear structure. The level scheme, which was partly known, was extended further. An isomeric $16^+$ level with observed lifetime $τ=52 \pm 5\, {\rm ns}$, was established from our measurements. Attempts were made to interpret the excited states based on multi quasiparticle and hole structures involving $2f_{5/2}$, $1h_{9/2}$, and $1i_{13/2}$ shell model states, along with moderate core excitation. Magnetic dipole band structure over the spin parity range:~$16^+ - 23^+$ was confirmed and evaluated in more detail, including the missing cross-over $E2$ transitions. Band-crossing along the shears band was observed and compared with the evidence of similar phenomena in the neighbouring neutron deficient $^{202}$Bi, $^{205}$Rn isotones and the $^{203}$At isotope. Based on comparison of the measured $B(M1)/B(E2)$ values for transitions along the band with the semiclassical model based estimates, the shears band of $^{204}$At was established along with the level scheme.
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Submitted 1 September, 2022; v1 submitted 12 June, 2020;
originally announced June 2020.
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Apparatus for Seebeck coefficient measurement of wire, thin film and bulk materials in the wide temperature range (80-650K)
Authors:
Ashish Kumar,
Ashutosh Patel,
Saurabh Singh,
K. Asokan,
D. Kanjilal
Abstract:
A Seebeck coefficient measurement apparatus has been designed and developed, which is very effective for accurate characterization of different type of samples in a wide temperature range (80 - 650K) simultaneously covering low as well as the high-temperature regime. Reducing the complexity of the technical design of sample holder and data collections has always been challenging to implement in a…
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A Seebeck coefficient measurement apparatus has been designed and developed, which is very effective for accurate characterization of different type of samples in a wide temperature range (80 - 650K) simultaneously covering low as well as the high-temperature regime. Reducing the complexity of the technical design of sample holder and data collections has always been challenging to implement in a single instrument when samples are in different geometrical shape and electronic structure. Our unique design of sample holder with pressure probes covers measurements of different samples shapes (wires, thin films and pellets) as well as different resistivity ranges (metals, semiconductors and insulators). It is suitable for characterization of different samples sizes (3-12 mm). A double heater configuration powered by a dual channel source meter is employed for maintaining a desired constant temperature difference across the sample for the whole temperature range. Two K-type thermocouples are used for simultaneously reading of temperatures and Seebeck voltages by utilizing different channels of a multichannel digital multimeter. Calibration of the system has been carried out using constantan, chromel and alumel materials and recorded data is found to be very accurate and consistent with earlier reports. The Seebeck coefficients of standard samples of constantan (wire) and GaN (thin film) have been reported, which shows the measurement capability of designed setup with versatile samples.
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Submitted 22 June, 2019; v1 submitted 19 June, 2019;
originally announced June 2019.
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Theoretical and Simulation Study of 'Comb' Electron beam and THz generation
Authors:
V. Joshi,
J. Karmakar,
N. Kumar,
B. Karmakar,
S. Tripathi,
S. Ghosh,
R. K. Bhandari,
D. Kanjilal,
Aruna Asaf Ali Marg,
A. Aryshev,
J. Urakawa
Abstract:
A compact accelerator based super-radiant THz source is under development at Inter University Accelerator Centre (IUAC), New Delhi. The facility is based on the principle of pre-bunched Free Electron Laser (FEL) which will produce THz radiation in the range of ~0.18 to 3 THz from a modulated electron beam. A photocathode electron gun will generate a short train of microbunches (a "comb" beam) driv…
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A compact accelerator based super-radiant THz source is under development at Inter University Accelerator Centre (IUAC), New Delhi. The facility is based on the principle of pre-bunched Free Electron Laser (FEL) which will produce THz radiation in the range of ~0.18 to 3 THz from a modulated electron beam. A photocathode electron gun will generate a short train of microbunches (a "comb" beam) driven by a fiber laser system capable of producing multi micro-pulse laser beam with variable separation ( "comb" laser pulse). Upon acceleration, the electron beam will be injected in to a compact undulator magnet tuned to the same frequency as the separation of the electron micro-bunches. The paper discusses the process of enhancement of super-radiant emission of radiation due to modulation in the comb beam and the conditions required to achieve maximum enhancement of the radiation power. The feasibility study of generating a comb beam at the photocathode and its transport through the beamline while preserving its temporal structure has been reported. To evaluate the characteristics of the radiation emitted from the comb beam, a C++ based particle tracker and Lienard-Wiechert field solver has been developed. The conceptual understanding of the emission of radiation from comb beam is shown to conform with the numerical results. The code has been used to calculate the radiation pulse energy emitted into the central cone of undulator for various comb beam configurations.
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Submitted 12 June, 2018;
originally announced June 2018.
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Clustered vacancies in ZnO: Chemical aspects and consequences on physical properties
Authors:
S. Pal,
N. Gogurla,
Avishek Das,
S. S. Singha,
P. Kumar,
D. Kanjilal,
A. Singha,
S. Chattopadhyay,
D. Jana,
A. Sarkar
Abstract:
Chemical nature of point defects, their segregation, cluster or complex formation in ZnO is an important area of investigation. In this report, 1.2 MeV Ar ion beam is used to incorporate defects in granular ZnO. Evolution of defective state with irradiation fluence 1 x 10^14 and 1 x 10^16 ions/cm2 has been monitored using XPS, PL and Raman spectroscopic study. XPS study shows presence of oxygen va…
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Chemical nature of point defects, their segregation, cluster or complex formation in ZnO is an important area of investigation. In this report, 1.2 MeV Ar ion beam is used to incorporate defects in granular ZnO. Evolution of defective state with irradiation fluence 1 x 10^14 and 1 x 10^16 ions/cm2 has been monitored using XPS, PL and Raman spectroscopic study. XPS study shows presence of oxygen vacancies (VO) in the Ar ion irradiated ZnO. Zn(LMM) Auger spectra clearly identifies transition involving metallic zinc in the irradiated samples. Intense PL emission from IZn related shallow donor bound excitons (DBX) is visible in the 10 K spectra for all samples. Although overall PL is largely reduced with irradiation disorder, DBX intensity is increased for the highest fluence irradiated sample. Raman study indicates damage in both zinc and oxygen sub-lattice by energetic ion beam. Representative Raman modes from defect complexes involving VO, IZn and IO are visible after irradiation with intermediate fluence. Further increase of fluence shows, to some extent, a homogenization of disorder. Huge reduction of resistance is also noted for this sample. Certainly, high irradiation fluence induces a qualitative modification of the conventional (and highly resistive) grain boundary (GB) structure of granular ZnO. Low resistive path, involving IZn related shallow donors, across the GB can be presumed to explain resistance reduction. Open volumes (VZn and VO) agglomerate more and more with increasing irradiation fluence and finally get transformed to voids. Results as a whole have been elucidated with a model which emphasizes possible evolution of new defect microstructure that is distinctively different from the GB related disorder. Based on the model, qualitative explanations of commonly observed radiation hardness, colouration and ferromagnetism in disordered ZnO have been put forward.
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Submitted 10 October, 2017;
originally announced October 2017.
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Anisotropic super-paramagnetism in cobalt implanted rutile-TiO2 single crystals
Authors:
Shalik Ram Joshi,
B. Padmanabhan,
Anupama Chanda,
N. Shukla,
Vivek Malik,
D. Kanjilal,
Shikha Varma
Abstract:
We study the magnetic properties of single crystals of rutile TiO2 implanted with cobalt for various fluences. The temperature variation of zero field cooled(ZFC) and field cooled (FC) magnetization shows a much higher blocking temperature (TB) along [1-10]. Similarly the scaling of magnetization isotherms above TB is seen only when the field is parallel to [1-10] direction. With field along this…
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We study the magnetic properties of single crystals of rutile TiO2 implanted with cobalt for various fluences. The temperature variation of zero field cooled(ZFC) and field cooled (FC) magnetization shows a much higher blocking temperature (TB) along [1-10]. Similarly the scaling of magnetization isotherms above TB is seen only when the field is parallel to [1-10] direction. With field along this direction, the magnetization shows near saturation at a much smaller field compared to that of[001] direction. The Co nanoclusters possess an "easy" and "hard axis" of magnetization coupled by the magneto crystalline anisotropy of secondary phases of cobalt with TiO2. In addition, at T=2 K we observe a crossover in the magnetization vs field isotherms between the two field directions in the samples which has been attributed to the anisotropic paramagnetism arising from cobalt present in 2+ ionic state with S = 3/2.
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Submitted 15 March, 2017;
originally announced March 2017.
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Enhanced Photoabsorption from Cobalt Implanted Rutile TiO2 (110) Surfaces
Authors:
Shalik Ram Joshi,
B. Padmanabhan,
Anupama Chanda,
Indrani Mishra,
V. K. Malik,
N. C. Mishra,
D. Kanjilal,
Shikha Varma
Abstract:
Present study investigates the photoabsorption properties of single crystal rutile TiO2 (110) surfaces after they have been implanted with low fluence of Cobalt ions. The surfaces, after implantation, demonstrate fabrication of nanostructures and anisotropic nano-ripple patterns. Creation of oxygen vacancies (Ti3+ states) as well as band gap modification for these samples is also observed. Results…
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Present study investigates the photoabsorption properties of single crystal rutile TiO2 (110) surfaces after they have been implanted with low fluence of Cobalt ions. The surfaces, after implantation, demonstrate fabrication of nanostructures and anisotropic nano-ripple patterns. Creation of oxygen vacancies (Ti3+ states) as well as band gap modification for these samples is also observed. Results presented here demonstrate that fabrication of self organized nanostructures and development of oxygen vacancies, upon cobalt implantation, promote the enhancement of photoabsorbance in both UV (2 times) and visible (5 times) regimes. These investigations on nanostructured TiO2 surfaces can be important for photo- catalysis.
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Submitted 18 November, 2015;
originally announced November 2015.
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Characterization of neutron transmutation doped (NTD) Ge for low temperature sensor development
Authors:
S. Mathimalar,
V. Singh,
N. Dokania,
V. Nanal,
R. G. Pillay,
S. Pal,
S. Ramakrishnan,
A. Shrivastava,
Priya Maheshwari,
P. K. Pujari,
S. Ojha,
D. Kanjilal,
K. C. Jagadeesan,
S. V. Thakare
Abstract:
Development of NTD Ge sensors has been initiated for low temperature (mK) thermometry in The India-based Tin detector (TIN.TIN). NTD Ge sensors are prepared by thermal neutron irradiation of device grade Ge samples at Dhruva reactor, BARC, Mumbai. Detailed measurements have been carried out in irradiated samples for estimating the carrier concentration and fast neutron induced defects. The Positro…
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Development of NTD Ge sensors has been initiated for low temperature (mK) thermometry in The India-based Tin detector (TIN.TIN). NTD Ge sensors are prepared by thermal neutron irradiation of device grade Ge samples at Dhruva reactor, BARC, Mumbai. Detailed measurements have been carried out in irradiated samples for estimating the carrier concentration and fast neutron induced defects. The Positron Annihilation Lifetime Spectroscopy (PALS) measurements indicated monovacancy type defects for all irradiated samples, while Channeling studies employing RBS with 2 MeV alpha particles, revealed no significant defects in the samples exposed to fast neutron fluence of $\sim 4\times10^{16}/cm^2$. Both PALS and Channeling studies have shown that vacuum annealing at 600 $^\circ$C for $\sim2$ hours is sufficient to recover the damage in the irradiated samples, thereby making them suitable for the sensor development.
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Submitted 5 December, 2014; v1 submitted 15 October, 2014;
originally announced October 2014.
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Au9+ swift heavy ion irradiation of Zn[CS(NH2)2]3SO4 crystal: Crystalline perfection and optical properties
Authors:
S. K. Kushwaha,
K. K. Maurya,
N. Vijayan,
A. K. Gupta,
D. Haranath,
B. Kumar,
D. Kanjilal,
G. Bhagavannarayana
Abstract:
The single crystal of tris(thiourea)zinc sulphate (Zn[CS(NH2)2]3SO4) was irradiated by 150 MeV Au9+ swift heavy ions and analyzed in comparison with pure crystal for crystalline perfection and optical properties. The Fourier transform infrared and x-ray powder diffraction inferred that swift ions lead the disordering and breaking of molecular bonds in lattice without formation of new structural ph…
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The single crystal of tris(thiourea)zinc sulphate (Zn[CS(NH2)2]3SO4) was irradiated by 150 MeV Au9+ swift heavy ions and analyzed in comparison with pure crystal for crystalline perfection and optical properties. The Fourier transform infrared and x-ray powder diffraction inferred that swift ions lead the disordering and breaking of molecular bonds in lattice without formation of new structural phases. High resolution X-ray diffraction (HRXRD) revealed the abundance of point defects, and formation of mosaics and low angle grain boundaries in the irradiated region of crystal. The swift ion irradiation found to affect the lattice vibrational modes and functional groups significantly. The defects induced by heavy ions act as the color centers and resulted in enhance of photoluminescence emission intensity. The optical transparency and band gap found to be decreased.
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Submitted 12 August, 2014;
originally announced August 2014.
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Superdeformation and alpha - cluster structure in 35Cl
Authors:
Abhijit Bisoi,
M. Saha Sarkar,
S. Sarkar,
S. Ray,
M. Roy Basu,
Debasmita Kanjilal,
Somnath Nag,
K. Selva Kumar,
A. Goswami,
N. Madhavan,
S. Muralithar,
R. K. Bhowmik
Abstract:
A superdeformed (SD) band has been identified in a non - alpha - conjugate nucleus 35Cl. It crosses the negative parity ground band above 11/2- and becomes the yrast at 15/2-. Lifetimes of all relevant states have been measured to follow the evolution of collectivity. Enhanced B(E2), B(E1) values as well as energetics provide evidences for superdeformation and existence of parity doublet cluster s…
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A superdeformed (SD) band has been identified in a non - alpha - conjugate nucleus 35Cl. It crosses the negative parity ground band above 11/2- and becomes the yrast at 15/2-. Lifetimes of all relevant states have been measured to follow the evolution of collectivity. Enhanced B(E2), B(E1) values as well as energetics provide evidences for superdeformation and existence of parity doublet cluster structure in an odd-A nucleus for the first time in A = 40 region. Large scale shell model calculations assign (sd)16(pf)3 as the origin of these states. Calculated spectroscopic factors correlate the SD states in 35Cl to those in 36Ar.
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Submitted 19 May, 2013;
originally announced May 2013.
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Magnetic and Electronic Structure study of Fe/MgO/Fe/Co Multilayer Stack Deposited by E-Beam Evaporation
Authors:
Jitendra Pal Singh,
Sanjeev Gautam,
Braj Bhusan Singh,
M. Raju,
S. Chaudhary,
D. Kabiraj,
D. Kanjilal,
Jenn-Min Lee,
**-Ming Chen,
K. Asokan,
Keun Hwa Chae
Abstract:
Present work investigates the magnetic and electronic structure of MgO/Fe/MgO/Fe/Co/Au multilayer stack grown on Si(100) substrates by electron beam evaporation method. X-ray diffraction study depicts polycrystalline nature of the multilayers. Results obtained from vibrating sample magnetometry (VSM) and near-edge X-ray absorption fine structure spectra (NEXAFS) at Fe & Co L- and Mg & O K-edges ar…
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Present work investigates the magnetic and electronic structure of MgO/Fe/MgO/Fe/Co/Au multilayer stack grown on Si(100) substrates by electron beam evaporation method. X-ray diffraction study depicts polycrystalline nature of the multilayers. Results obtained from vibrating sample magnetometry (VSM) and near-edge X-ray absorption fine structure spectra (NEXAFS) at Fe & Co L- and Mg & O K-edges are applied to understand the magnetic and electronic properties of this stack and its interface properties. While the spectral features of Fe L-edge spectrum recorded by surface sensitive total electron yield (TEY) mode shows the formation of FeOx at the Fe/MgO interface, the bulk sensitive total fluorescence yield (TFY), shows Fe in metallic nature. Co L-edge spectrum reveals the presence of metallic nature of cobalt in both TEY and TFY modes. Above results are well correlated with X-ray reflectometry.
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Submitted 13 May, 2013;
originally announced May 2013.
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Ion beam generated surface ripples: new insight in the underlying mechanism
Authors:
Tanuj Kumar,
Ashish Kumar,
D. C. Agarwal,
N. P. Lalla,
D. Kanjilal
Abstract:
A new hydrodynamic mechanism is proposed for the ion beam induced surface patterning on solid surfaces. Unlike the standard mechanisms based on the ion beam impact generated erosion and mass redistribution at the free surface (proposed by Bradley-Harper (BH) and its extended theories), the new mechanism proposes that the ion beam induced saltation and creep processes, coupled with incompressible s…
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A new hydrodynamic mechanism is proposed for the ion beam induced surface patterning on solid surfaces. Unlike the standard mechanisms based on the ion beam impact generated erosion and mass redistribution at the free surface (proposed by Bradley-Harper (BH) and its extended theories), the new mechanism proposes that the ion beam induced saltation and creep processes, coupled with incompressible solid flow in amorphous layer, leads to the formation of ripple patterns at the amorphous/crystalline (a/c) interface and hence at the free surface. Ion beam stimulated solid flow inside the amorphous layer controls the wavelength, where as the amount of material transported and re-deposited at a/c interface control the amplitude of ripples. The new approach is verified by designed experiments and supported by the discrete simulation method.
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Submitted 1 June, 2013; v1 submitted 23 July, 2012;
originally announced July 2012.
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Hydro-dynamics of surface patterning by ion beam irradiation: an interface phenomenon
Authors:
Tanuj Kumar,
D. C. Agarwal,
S. A. Khan,
N. P. Lalla,
D. Kanjilal
Abstract:
We show that the ion beam induced incompressible amorphous solid flow in terms of advection transport mechanism leads to the erosion and deposition of atoms at the amorphous/crystalline (a/c) interface resulting in the formation of pattern at the a/c interface as well as at the free surface. The ion beam impact generated erosion and mass redistribution at the free surface are found to have insigni…
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We show that the ion beam induced incompressible amorphous solid flow in terms of advection transport mechanism leads to the erosion and deposition of atoms at the amorphous/crystalline (a/c) interface resulting in the formation of pattern at the a/c interface as well as at the free surface. The ion beam impact generated erosion and mass redistribution at the free surface are found to have insignificant effect in patterning of surface. By varying the thicknesses of amorphous layer, it has been established that a/c interface plays the dominant role in surface patterning. The morphological variation of Si surface after 50 keV Ar+ ion bombardment has been investigated by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (X-TEM) as a function of ion fluence. Navier-Stokes flow inside the amorphous layer coupled with the Exner equation successfully explains the growth mechanism of surface patterning.
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Submitted 21 February, 2014; v1 submitted 5 June, 2012;
originally announced June 2012.
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Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation
Authors:
Soubhik Chattopadhyay,
Sreetama Dutta,
Palash Pandit,
D. Jana,
S. Chattopadhyay,
A. Sarkar,
P. Kumar,
D. Kanjilal,
D. K. Mishra,
S. K. Ray
Abstract:
We report a systematic study on 1.2 MeV Ar^8+ irradiated ZnO by x-ray diffraction (XRD), room temperature photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption measurements. ZnO retains its wurtzite crystal structure up to maximum fluence of 5 x 10^16 ions/cm^2. Even, the width of the XRD peaks changes little with irradiation. The UV-Vis absorption spectra of the samples, unirradiated…
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We report a systematic study on 1.2 MeV Ar^8+ irradiated ZnO by x-ray diffraction (XRD), room temperature photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption measurements. ZnO retains its wurtzite crystal structure up to maximum fluence of 5 x 10^16 ions/cm^2. Even, the width of the XRD peaks changes little with irradiation. The UV-Vis absorption spectra of the samples, unirradiated and irradiated with lowest fluence (1 x 10^15 ions/cm^2), are nearly same. However, the PL emission is largely quenched for this irradiated sample. Red shift of the absorption edge has been noticed for higher fluence. It has been found that red shift is due to at least two defect centers. The PL emission is recovered for 5 x 10^15 ions/cm^2 fluence. The sample colour is changed to orange and then to dark brown with increasing irradiation fluence. Huge resistivity decrease is observed for the sample irradiated with 5 x 10^15 ions/cm^2 fluence. Results altogether indicate the evolution of stable oxygen vacancies and zinc interstitials as dominant defects for high fluence irradiation.
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Submitted 4 October, 2010;
originally announced October 2010.
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Controlled defects in ZnO by low energy Ar irradiation
Authors:
Soubhik Chattopadhyay,
Sreetama Dutta,
D. Jana,
S. Chattopadhyay,
A. Sarkar,
P. Kumar,
D. Kanjilal,
D. K. Mishra,
S. K. Ray
Abstract:
We report interesting observations in 1.2 MeV Ar8+ ion irradiated ZnO which, to the best of our knowledge, have not been published earlier and will be useful for the scientific community engaged in research on ZnO. Irradiation with the initial fluence 1 X 10^15 ions/cm^2 changes the colour of the sample from white to orange while the highest irradiation fluence makes it dark reddish brown that a…
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We report interesting observations in 1.2 MeV Ar8+ ion irradiated ZnO which, to the best of our knowledge, have not been published earlier and will be useful for the scientific community engaged in research on ZnO. Irradiation with the initial fluence 1 X 10^15 ions/cm^2 changes the colour of the sample from white to orange while the highest irradiation fluence makes it dark reddish brown that appears as black. Such changes in colour can be correlated with the oxygen vacancy type defects. No significant change in the grain size of the irradiated samples, as revealed from the x-ray diffraction (XRD) line width broadening, has been observed. Increase of surface roughness due to sputtering is clearly visible in scanning electron micrographs (SEM) with highest fluence of irradiation. Room temperature Photoluminescence (PL) spectrum of the unirradiated sample shows intense ultra-violet (UV) emission (~ 3.27 eV) and less prominent defect level emissions (2-3 eV). The overall emission is largely quenched due to initial irradiation fluence. But with increasing fluence UV emission is enhanced along with prominent defect level emissions. Remarkably, the resistivity of the irradiated sample with highest fluence is reduced by four orders of magnitude compared to that of the unirradiated sample. This indicates increase of donor concentration as well as their mobility due to irradiation. Oxygen vacancies are deep donors in ZnO, but surely they influence the stability of the shallow donors (presumably zinc interstitial related) and vice versa. This is in conformity with recent theoretical calculations.
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Submitted 22 December, 2009; v1 submitted 24 November, 2009;
originally announced November 2009.
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Observation of isomeric decays and the high spin states in doubly-odd 208Fr
Authors:
D. Kanjilal,
S. Bhattacharya,
A. Goswami,
R. Kshetri,
R. Raut,
S. Saha,
R. K. Bhowmik,
J. Gehlot,
S. Muralithar,
R. P. Singh,
G. Jnaneswari,
G. Mukherjee,
B. Mukherjee
Abstract:
Neutron deficient isotopes of Francium (Z=87, N=121-123) as excited nuclei were produced in the fusion-evaporation reaction: 197Au(16O,xn)[213-x]Fr at 100 MeV. The gamma-rays from the residues were observed through the high sensitivity Germanium Clover detector array INGA. The decay of the high spin states and the isomeric states of the doubly-odd 208Fr nuclei, identified from the known sequence…
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Neutron deficient isotopes of Francium (Z=87, N=121-123) as excited nuclei were produced in the fusion-evaporation reaction: 197Au(16O,xn)[213-x]Fr at 100 MeV. The gamma-rays from the residues were observed through the high sensitivity Germanium Clover detector array INGA. The decay of the high spin states and the isomeric states of the doubly-odd 208Fr nuclei, identified from the known sequence of ground state transitions, were observed. The half lives of the 194(2) keV isomeric transition, known from earlier observations, was measured to be 233(18) ns. A second isomeric transition at 383(2) keV and half life of 33(7) ns was also found. The measured half lives were compared with the corresponding single particle estimates, based on a the level scheme obtained from the experiment.
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Submitted 16 November, 2009;
originally announced November 2009.
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Observation of a Universal Aggregation Mechanism and a Possible Phase Transition in Au Sputtered by Swift Heavy Ions
Authors:
P. K. Kuiri,
B. Joseph,
H. P. Lenka,
G. Sahu,
J. Ghatak,
D. Kanjilal,
D. P. Mahapatra
Abstract:
Two exponents, $δ$, for size distribution of $n$-atom clusters, $Y(n)\sim n^{-δ}$, have been found in Au clusters sputtered from embedded Au nanoparticles under swift heavy ion irradiation. For small clusters, below 12.5 nm in size, $δ$ has been found to be 3/2, which can be rationalized as occurring from a steady state aggregation process with size independent aggregation. For larger clusters,…
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Two exponents, $δ$, for size distribution of $n$-atom clusters, $Y(n)\sim n^{-δ}$, have been found in Au clusters sputtered from embedded Au nanoparticles under swift heavy ion irradiation. For small clusters, below 12.5 nm in size, $δ$ has been found to be 3/2, which can be rationalized as occurring from a steady state aggregation process with size independent aggregation. For larger clusters, a $δ$ value of 7/2 is suggested, which might come from a dynamical transition to another steady state where aggregation and evaporation rates are size dependent. In the present case, the observed decay exponents do not support any possibility of a thermodynamic liquid-gas type phase transition taking place, resulting in cluster formation.
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Submitted 16 October, 2009; v1 submitted 17 February, 2008;
originally announced February 2008.
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A Hybrid model for the origin of photoluminescence from Ge nanocrystals in SiO$_2$ matrix
Authors:
A. Singha,
A. Roy,
D. Kabiraj,
D. Kanjilal
Abstract:
In spite of several articles, the origin of visible luminescence from germanium nanocrystals in SiO$_2$ matrix is controversial even today. Some authors attribute the luminescence to quantum confinement of charge carriers in these nanocrystals. On the other hand, surface or defect states formed during the growth process, have also been proposed as the source of luminescence in this system. We ha…
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In spite of several articles, the origin of visible luminescence from germanium nanocrystals in SiO$_2$ matrix is controversial even today. Some authors attribute the luminescence to quantum confinement of charge carriers in these nanocrystals. On the other hand, surface or defect states formed during the growth process, have also been proposed as the source of luminescence in this system. We have addressed this long standing query by simultaneous photoluminescence and Raman measurements on germanium nanocrystals embedded in SiO$_2$ matrix, grown by two different techniques: (i) low energy ion-implantation and (ii) atom beam sputtering. Along with our own experimental observations, we have summarized relevant information available in the literature and proposed a \emph{Hybrid Model} to explain the visible photoluminescence from nanocrystalline germanium in SiO$_2$ matrix.
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Submitted 28 July, 2006;
originally announced July 2006.
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Ion Beam Synthesis of embedded SiC
Authors:
Y. S. Katharria,
V. BAranwal,
D. C. Agarwal,
R. Krishna,
P. Kumar,
F. Singh,
D. Kanjilal
Abstract:
The synthesis of embedded silicon carbide was carried out in N type silicon samples having (100) and (111) orientations using high dose implantation of carbon ions at room temperature. The variation of dose was employed to get dose dependence of silicon carbide formation. Postimplant annealing at 1000 C in order to anneal out the implantion induced defects and to get silicon carbide precipitates…
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The synthesis of embedded silicon carbide was carried out in N type silicon samples having (100) and (111) orientations using high dose implantation of carbon ions at room temperature. The variation of dose was employed to get dose dependence of silicon carbide formation. Postimplant annealing at 1000 C in order to anneal out the implantion induced defects and to get silicon carbide precipitates in silicon matrix. Detailed Fourier tarnsform infrared spectroscopy analysis and x-ray diffraction studies confirms the formation of cubic phase of silicon carbide. The grain size of the silicon carbide precipitates is estimated to a few nano meters. The silicon carbide precipitates have been found to exhibit a better crystalline order in silicon (100) samples than in silicon (111) samples.The x-ray diffraction results also indicate the amorphization of bombarded region of the silicon samples. After annealing the amorphized region got recrystalized into a polycrystalline phase of silicon.
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Submitted 24 May, 2005;
originally announced May 2005.
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Peak effect and its evolution with defect structure in YBa2Cu3O7-d thin films at microwave frequencies
Authors:
Tamalika Banerjee,
D. Kanjilal,
R. Pinto
Abstract:
The vortex dynamics in YBa2Cu3O7-d thin films have been studied at microwave frequencies. A pronounced peak in the surface resistance, Rs, is observed in these films at frequencies of 4.88 and 9.55 GHz for magnetic fields varying from 0.2 to 0.8 T. The peak is associated with an order-disorder transformation of the flux line lattice as the temperature or field is increased. The occurrence of the…
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The vortex dynamics in YBa2Cu3O7-d thin films have been studied at microwave frequencies. A pronounced peak in the surface resistance, Rs, is observed in these films at frequencies of 4.88 and 9.55 GHz for magnetic fields varying from 0.2 to 0.8 T. The peak is associated with an order-disorder transformation of the flux line lattice as the temperature or field is increased. The occurrence of the peak in Rs is crucially dependent on the depinning frequency, wp and on the nature and concentration of growth defects present in these films. Introduction of artificial defects by swift heavy ion irradiation with 200 MeV Ag ion at a fluence of 4x1010 ions/cm2 enhances wp and suppresses the peak at 4.88 GHz but the peak at 9.55 GHz remains unaffected. A second peak at lower temperature has also been observed at 9.55 GHz. This is related to twin boundaries from angular dependence studies of Rs. Based on the temperature variation of Rs, vortex phase diagrams have been constructed at 9.55 GHz.
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Submitted 22 October, 2001;
originally announced October 2001.
