Showing 1–47 of 47 results for author: Kaniber, M

Plasmonics enabled atomically thin linearly polarized emitter at room temperature

Authors: Bidisha Roy, Maex Blauth, Siddharth Dhomkar, Michael Kaniber, Vinod M. Menon, Jonathan. J. Finley

Abstract: Two-dimensional transition metal di-chalcogenide semiconductors provide unique possibilities to investigate strongly confined excitonic physics and a plasmonic platform integrable to such materials constitutes a hybrid system that can be of interest to enable manipulation of their cumulative optical properties. Here we report tuning of excitonic emission from monolayer WSe2, mechanically exfoliate… ▽ More Two-dimensional transition metal di-chalcogenide semiconductors provide unique possibilities to investigate strongly confined excitonic physics and a plasmonic platform integrable to such materials constitutes a hybrid system that can be of interest to enable manipulation of their cumulative optical properties. Here we report tuning of excitonic emission from monolayer WSe2, mechanically exfoliated on top of a periodic two dimensional plasmonic array of elliptical gold (Au) nanodiscs. By exploiting the polarization-dependent nature of plasmonic resonance of the nano plasmonic array (NPA), the photoluminescence (PL) emission from the overlaid monolayer WSe2 could be significantly manipulated. PL is preferentially enhanced at the NPA covered regions of the ake when excited closer to the plasmonic resonant frequencies and previously unpolarized WSe2 PL emission gained ~ 20 up to 40 % degree of linear polarization at room temperature. Obtaining significant spectral overlap between the PL spectrum of WSe2 and the polarization tunable plasmonic resonance of the NPA plays a crucial role in this observation. The results demonstrate active tunability of optical emission from WSe2 by using an otherwise passive plasmonic environment and open the possibility of achieving atomically thin linearly polarized emitters at room temperature. In addition to fundamentally interesting physics of such interactions this can be highly desirable for ultrathin orientation sensitive opto-electronic device related applications. △ Less

Submitted 25 May, 2022; originally announced May 2022.

Comments: 9 pages, 3 Figures

Tuning the Optical Properties of an MoSe$_2$ Monolayer Using Nanoscale Plasmonic Antennas

Authors: Marko M. Petrić, Malte Kremser, Matteo Barbone, Anna Nolinder, Anna Lyamkina, Andreas V. Stier, Michael Kaniber, Kai Müller, Jonathan J. Finley

Abstract: Nanoplasmonic systems combined with optically-active two-dimensional materials provide intriguing opportunities to explore and control light-matter interactions at extreme sub-wavelength lengthscales approaching the exciton Bohr radius. Here, we present room- and cryogenic-temperature investigations of light-matter interactions between an MoSe$_2$ monolayer and individual lithographically defined… ▽ More Nanoplasmonic systems combined with optically-active two-dimensional materials provide intriguing opportunities to explore and control light-matter interactions at extreme sub-wavelength lengthscales approaching the exciton Bohr radius. Here, we present room- and cryogenic-temperature investigations of light-matter interactions between an MoSe$_2$ monolayer and individual lithographically defined gold dipole nanoantennas having sub-10 nm feed gaps. By progressively tuning the nanoantenna size, their dipolar resonance is tuned relative to the A-exciton transition in a proximal MoSe$_2$ monolayer achieving a total tuning of $\sim 130\;\mathrm{meV}$. Differential reflectance measurements performed on $> 100$ structures reveal an apparent avoided crossing between exciton and dipolar mode and an exciton-plasmon coupling constant of $g= 55\;\mathrm{meV}$, representing $g/(\hbarω_X)\geq3\%$ of the transition energy. This places our hybrid system in the intermediate-coupling regime where spectra exhibit a characteristic Fano-like shape, indicative of the interplay between pronounced light-matter coupling and significant dam**. We also demonstrate active control of the optical response by varying the polarization of the excitation light to programmably suppress coupling to the dipole mode. We further study the emerging optical signatures of the monolayer localized at dipole nanoantennas at $10\;\mathrm{K}$. Our findings represent a key step towards realizing non-linear photonic devices based on 2D materials with potential for low-energy and ultrafast performance. △ Less

Submitted 10 January, 2022; v1 submitted 13 July, 2021; originally announced July 2021.

Comments: 17 pages, 12 figures, https://pubs.acs.org/doi/10.1021/acs.nanolett.1c02676

Ultra-compact photodetection in atomically thin MoSe$_2$

Authors: M. Blauth, G. Vest, S. Loukkose Rosemary, M. Prechtl, O. Hartwig, M. Jürgensen, M. Kaniber, A. V. Stier, J. J. Finley

Abstract: Excitons in atomically-thin semiconductors interact very strongly with electromagnetic radiation and are necessarily close to a surface. Here, we exploit the deep-subwavelength confinement of surface plasmon polaritons (SPPs) at the edge of a metal-insulator-metal plasmonic waveguide and their proximity of 2D excitons in an adjacent atomically thin semiconductor to build an ultra-compact photodete… ▽ More Excitons in atomically-thin semiconductors interact very strongly with electromagnetic radiation and are necessarily close to a surface. Here, we exploit the deep-subwavelength confinement of surface plasmon polaritons (SPPs) at the edge of a metal-insulator-metal plasmonic waveguide and their proximity of 2D excitons in an adjacent atomically thin semiconductor to build an ultra-compact photodetector. When subject to far-field excitation we show that excitons are created throughout the dielectric gap region of our waveguide and converted to free carriers primarily at the anode of our device. In the near-field regime, strongly confined SPPs are launched, routed and detected in a 20nm narrow region at the interface between the waveguide and the monolayer semiconductor. This leads to an ultra-compact active detector region of only ~0.03$μm ^2$ that absorbs 86% of the propagating energy in the SPP. Due to the electromagnetic character of the SPPs, the spectral response is essentially identical to the far-field regime, exhibiting strong resonances close to the exciton energies. While most of our experiments are performed on monolayer thick MoSe$_2$, the photocurrent-per-layer increases super linearly in multilayer devices due to the suppression of radiative exciton recombination. These results demonstrate an integrated device for nanoscale routing and detection of light with the potential for on-chip integration at technologically relevant, few-nanometer length scales. △ Less

Submitted 16 May, 2019; originally announced May 2019.

Atomistic defect states as quantum emitters in monolayer MoS$_2$

Authors: Julian Klein, Michael Lorke, Matthias Florian, Florian Sigger, Jakob Wierzbowski, John Cerne, Kai Müller, Takashi Taniguchi, Kenji Watanabe, Ursula Wurstbauer, Michael Kaniber, Michael Knap, Richard Schmidt, Jonathan J. Finley, Alexander W. Holleitner

Abstract: Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum device technologies. The ability to tailor quantum emission through deterministic defect engineering is of growing importance for realizing scalable quantum architectures. However, a major difficulty is that defects need to be positioned site-selectively within the solid. Here, we overco… ▽ More Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum device technologies. The ability to tailor quantum emission through deterministic defect engineering is of growing importance for realizing scalable quantum architectures. However, a major difficulty is that defects need to be positioned site-selectively within the solid. Here, we overcome this challenge by controllably irradiating single-layer MoS$_{2}$ using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion bombarded MoS$_{2}$ flake with high-quality hBN reveals spectrally narrow emission lines that produce photons at optical wavelengths in an energy window of one to two hundred meV below the neutral 2D exciton of MoS$_{2}$. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron-hole complexes at defect states generated by the helium ion bombardment. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and exotic Hubbard systems. △ Less

Submitted 14 January, 2019; v1 submitted 4 January, 2019; originally announced January 2019.

Comments: Main: 9 pages, 3 figures + SI: 19 pages, 10 figures

Journal ref: Nature Communications 10, 2755 (2019)

Coupling single photons from discrete quantum emitters in WSe$_2$ to lithographically defined plasmonic slot-waveguides

Authors: Mäx Blauth, Marius Jürgensen, Gwenaëlle Vest, Oliver Hartwig, Maximilian Prechtl, John Cerne, Jonathan J. Finley, Michael Kaniber

Abstract: We report the observation of the generation and routing of single plasmons generated by localized excitons in a WSe$_2$ monolayer flake exfoliated onto lithographically defined Au-plasmonic waveguides. Statistical analysis of the position of different quantum emitters shows that they are $(3.3 \pm 0.7)\times$ more likely to form close to the edges of the plasmonic waveguides. By characterizing ind… ▽ More We report the observation of the generation and routing of single plasmons generated by localized excitons in a WSe$_2$ monolayer flake exfoliated onto lithographically defined Au-plasmonic waveguides. Statistical analysis of the position of different quantum emitters shows that they are $(3.3 \pm 0.7)\times$ more likely to form close to the edges of the plasmonic waveguides. By characterizing individual emitters we confirm their single-photon character via the observation of antibunching of the signal ($g^{(2)}(0) = 0.42$) and demonstrate that specific emitters couple to the modes of the proximal plasmonic waveguide. Time-resolved measurements performed on emitters close to, and far away from the plasmonic nanostructures indicate that Purcell factors up to $15 \pm 3$ occur, depending on the precise location of the quantum emitter relative to the tightly confined plasmonic mode. Measurement of the point spread function of five quantum emitters relative to the waveguide with <50nm precision are compared with numerical simulations to demonstrate potential for higher increases of the coupling efficiency for ideally positioned emitters. The integration of such strain-induced quantum emitters with deterministic plasmonic routing is a step toward deep-subwavelength on-chip single quantum light sources. △ Less

Submitted 30 June, 2018; originally announced July 2018.

Coexistence of weak and strong coupling with a quantum dot in a photonic molecule

Authors: S. Lichtmannecker, M. Kaniber, S. Echeverri-Arteaga, I. C. Andrade, J. Ruiz-Rivas, T. Reichert, M. Becker, M. Blauth, G. Reithmaier, P. L. Ardelt, M. Bichler, E. A. Gómez, H. Vinck-Posada, E. del Valle, J. J. Finley

Abstract: We study the emission from a molecular photonic cavity formed by two proximal photonic crystal defect cavities containing a small number (<3) of In(Ga)As quantum dots. Under strong excitation we observe photoluminescence from the bonding and antibonding modes in excellent agreement with expectations from numerical simulations. Power dependent measurements reveal an unexpected peak, emerging at an… ▽ More We study the emission from a molecular photonic cavity formed by two proximal photonic crystal defect cavities containing a small number (<3) of In(Ga)As quantum dots. Under strong excitation we observe photoluminescence from the bonding and antibonding modes in excellent agreement with expectations from numerical simulations. Power dependent measurements reveal an unexpected peak, emerging at an energy between the bonding and antibonding modes of the molecule. Temperature dependent measurements show that this unexpected feature is photonic in origin. Time-resolved measurements show the emergent peak exhibits a lifetime $τ_M=0.75 \, \pm 0.1 \, ns $, similar to both bonding and antibonding coupled modes. Comparison of experimental results with theoretical expectations reveal that this new feature arises from a coexistence of weak- and strong-coupling, due to the molecule emitting in an environment whose configuration permits or, on the contrary, impedes its strong-coupling. This scenario is reproduced theoretically for our particular geometry with a master equation reduced to the key ingredients of its dynamics. Excellent qualitative agreement is obtained between experiment and theory, showing how solid-state cavity QED can reveal new regimes of light-matter interaction. △ Less

Submitted 26 June, 2018; originally announced June 2018.

The dielectric impact of layer distances on exciton and trion binding energies in van der Waals heterostructures

Authors: M. Florian, M. Hartmann, A. Steinhoff, J. Klein, A. Holleitner, J. J. Finley, T. O. Wehling, M. Kaniber, C. Gies

Abstract: The electronic and optical properties of monolayer transition-metal dichalcogenides (TMDs) and van der Waals heterostructures are strongly subject to their dielectric environment. In each layer the field lines of the Coulomb interaction are screened by the adjacent material, which reduces the single-particle band gap as well as exciton and trion binding energies. By combining an electrostatic mode… ▽ More The electronic and optical properties of monolayer transition-metal dichalcogenides (TMDs) and van der Waals heterostructures are strongly subject to their dielectric environment. In each layer the field lines of the Coulomb interaction are screened by the adjacent material, which reduces the single-particle band gap as well as exciton and trion binding energies. By combining an electrostatic model for a dielectric hetero-multi-layered environment with semiconductor many-particle methods, we demonstrate that the electronic and optical properties are sensitive to the interlayer distances on the atomic scale. Spectroscopical measurements in combination with a direct solution of a three-particle Schrödinger equation reveal trion binding energies that correctly predict recently measured interlayer distances. △ Less

Submitted 15 December, 2017; originally announced December 2017.

Journal ref: Nano Lett. 18, 2725 (2018)

Robust valley polarization of helium ion modified atomically thin MoS$_{2}$

Authors: Julian Klein, Agnieszka Kuc, Anna Nolinder, Marcus Altzschner, Jakob Wierzbowski, Florian Sigger, Franz Kreupl, Jonathan J. Finley, Ursula Wurstbauer, Alexander W. Holleitner, Michael Kaniber

Abstract: Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robustness of their emergent optical and valleytronic properties is essential for typical exposure doses used during fabrication. Here, we explore how focused helium ion bombardment affects the intrinsic vibrational, luminesc… ▽ More Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robustness of their emergent optical and valleytronic properties is essential for typical exposure doses used during fabrication. Here, we explore how focused helium ion bombardment affects the intrinsic vibrational, luminescence and valleytronic properties of atomically thin MoS$_{2}$. By probing the disorder dependent vibrational response we deduce the interdefect distance by applying a phonon confinement model. We show that the increasing interdefect distance correlates with disorder-related luminescence arising 180 meV below the neutral exciton emission. We perform ab-initio density functional theory of a variety of defect related morphologies, which yield first indications on the origin of the observed additional luminescence. Remarkably, no significant reduction of free exciton valley polarization is observed until the interdefect distance approaches a few nanometers, namely the size of the free exciton Bohr radius. Our findings pave the way for direct writing of sub-10 nm nanoscale valleytronic devices and circuits using focused helium ions. △ Less

Submitted 19 February, 2018; v1 submitted 3 May, 2017; originally announced May 2017.

Comments: 9 pages, 5 figures

Journal ref: 2D Materials, 5 011007 (2018)

Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit

Authors: Jakob Wierzbowski, Julian Klein, Florian Sigger, Christian Straubinger, Malte Kremser, Takashi Taniguchi, Kenji Watanabe, Ursula Wurstbauer, Alexander W. Holleitner, Michael Kaniber, Kai Müller, Jonathan J. Finley

Abstract: We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) MoSe$_{2}$, WSe$_{2}$ and MoS$_{2}$ by encapsulation within few nanometer thick hBN. Encapsulation is shown to result in a significant reduction of the 10K excitonic linewidths down to $\sim3.5 \text{ meV}$ for n-MoSe$_{2}$, $\sim5.0 \text{ meV}$ for p-WSe… ▽ More We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) MoSe$_{2}$, WSe$_{2}$ and MoS$_{2}$ by encapsulation within few nanometer thick hBN. Encapsulation is shown to result in a significant reduction of the 10K excitonic linewidths down to $\sim3.5 \text{ meV}$ for n-MoSe$_{2}$, $\sim5.0 \text{ meV}$ for p-WSe$_{2}$ and $\sim4.8 \text{ meV}$ for n-MoS$_{2}$. Evidence is obtained that the hBN environment effectively lowers the Fermi level since the relative spectral weight shifts towards the neutral exciton emission in n-doped TMDCs and towards charged exciton emission in p-doped TMDCs. Moreover, we find that fully encapsulated MoS$_{2}$ shows resolvable exciton and trion emission even after high power density excitation in contrast to non-encapsulated materials. Our findings suggest that encapsulation of mechanically exfoliated few-monolayer TMDCs within nanometer thick hBN dramatically enhances optical quality, producing ultra-narrow linewidths that approach the homogeneous limit. △ Less

Submitted 30 April, 2017; originally announced May 2017.

Electric-field switchable second-harmonic generation in bilayer MoS$_{2}$ by inversion symmetry breaking

Authors: Julian Klein, Jakob Wierzbowski, Alexander Steinhoff, Matthias Florian, Malte Rösner, Florian Heimbach, Kai Müller, Frank Jahnke, Tim O. Wehling, Jonathan J. Finley, Michael Kaniber

Abstract: We demonstrate pronounced electric-field-induced second-harmonic generation in naturally inversion symmetric 2H stacked bilayer MoS$_{2}$ embedded into microcapacitor devices. By applying strong external electric field perturbations ($|F| = \pm 2.6 MVcm^{-1}$) perpendicular to the basal plane of the crystal we control the inversion symmetry breaking and, hereby, tune the nonlinear conversion effic… ▽ More We demonstrate pronounced electric-field-induced second-harmonic generation in naturally inversion symmetric 2H stacked bilayer MoS$_{2}$ embedded into microcapacitor devices. By applying strong external electric field perturbations ($|F| = \pm 2.6 MVcm^{-1}$) perpendicular to the basal plane of the crystal we control the inversion symmetry breaking and, hereby, tune the nonlinear conversion efficiency. Strong tunability of the nonlinear response is observed throughout the energy range ($E_ω \sim 1.25 eV - 1.47 eV$) probed by measuring the second-harmonic response at $E_{2ω}$, spectrally detuned from both the A- and B-exciton resonances. A 60-fold enhancement of the second-order nonlinear signal is obtained for emission at $E_{2ω} = 2.49 eV$, energetically detuned by $ΔE = E_{2ω} - E_C = -0.26 eV$ from the C-resonance ($E_{C} = 2.75 eV$). The pronounced spectral dependence of the electric-field-induced second-harmonic generation signal reflects the bandstructure and wave function admixture and exhibits particularly strong tunability below the C-resonance, in good agreement with Density Functional Theory calculations. Moreover, we show that the field-induced second-harmonic generation relies on the interlayer coupling in the bilayer. Our findings strongly suggest that the strong tunability of the electric-field-induced second-harmonic generation signal in bilayer transition metal dichalcogenides may find applications in miniaturized electrically switchable nonlinear devices. △ Less

Submitted 16 March, 2017; originally announced March 2017.

Comments: 8 pages, 5 figures

Journal ref: Nano Lett. 17, 392 (2017)

Surface acoustic wave regulated single photon emission from a coupled quantum dot-nanocavity system

Authors: Matthias Weiß, Stephan Kapfinger, Thorsten Reichert, Jonathan J. Finley, Achim Wixforth, Michael Kaniber, Hubert J. Krenner

Abstract: A coupled quantum dot--nanocavity system in the weak coupling regime of cavity quantumelectrodynamics is dynamically tuned in and out of resonance by the coherent elastic field of a $f_{\rm SAW}\simeq800\,\mathrm{MHz}$ surface acoustic wave. When the system is brought to resonance by the sound wave, light-matter interaction is strongly increased by the Purcell effect. This leads to a precisely tim… ▽ More A coupled quantum dot--nanocavity system in the weak coupling regime of cavity quantumelectrodynamics is dynamically tuned in and out of resonance by the coherent elastic field of a $f_{\rm SAW}\simeq800\,\mathrm{MHz}$ surface acoustic wave. When the system is brought to resonance by the sound wave, light-matter interaction is strongly increased by the Purcell effect. This leads to a precisely timed single photon emission as confirmed by the second order photon correlation function $g^{(2)}$. All relevant frequencies of our experiment are faithfully identified in the Fourier transform of $g^{(2)}$, demonstrating high fidelity regulation of the stream of single photons emitted by the system. △ Less

Submitted 11 July, 2016; v1 submitted 16 May, 2016; originally announced May 2016.

Comments: revised manuscript - to be published in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 109, 033105 (2016)

Monolithically integrated single quantum dots coupled to bowtie nanoantennas

Authors: A. A. Lyamkina, K. Schraml, A. Regler, M. Schalk, A. K. Bakarov, A. I. Toropov, S. P. Moshchenko, M. Kaniber

Abstract: Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum photonics technologies. For this purpose, stable and bright semiconductor emitters are needed, which moreover allow for CMOS-compatibility and optical activity in the telecommunication band. Here, we demonstrate strongly enhanced light-matter… ▽ More Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum photonics technologies. For this purpose, stable and bright semiconductor emitters are needed, which moreover allow for CMOS-compatibility and optical activity in the telecommunication band. Here, we demonstrate strongly enhanced light-matter coupling of single near-surface ($<10\,nm$) InAs quantum dots monolithically integrated into electromagnetic hot-spots of sub-wavelength sized metal nanoantennas. The antenna strongly enhances the emission intensity of single quantum dots by up to $\sim16\times$, an effect accompanied by an up to $3.4\times$ Purcell-enhanced spontaneous emission rate. Moreover, the emission is strongly polarised along the antenna axis with degrees of linear polarisation up to $\sim85\,\%$. The results unambiguously demonstrate the efficient coupling of individual quantum dots to state-of-the-art nanoantennas. Our work provides new perspectives for the realisation of quantum plasmonic sensors, step-changing photovoltaic devices, bright and ultrafast quantum light sources and efficent nano-lasers. △ Less

Submitted 23 March, 2016; originally announced March 2016.

Journal ref: Optics Express 24, 28936 (2016)

Long-term mutual phase locking of picosecond pulse pairs generated by a semiconductor nanowire laser

Authors: B. Mayer, A. Regler, S. Sterzl, T. Stettner, G. Koblmüller, M. Kaniber, B. Lingnau, K. Lüdge, J. J. Finley

Abstract: The ability to generate phase-stabilised trains of ultrafast laser pulses by mode-locking underpins photonics research in fields such as precision metrology and spectroscopy. However, the complexity of conventional mode-locked laser systems, combined with the need for a mechanism to induce active or passive phase locking between resonator modes, has hindered their realisation at the nanoscale. Her… ▽ More The ability to generate phase-stabilised trains of ultrafast laser pulses by mode-locking underpins photonics research in fields such as precision metrology and spectroscopy. However, the complexity of conventional mode-locked laser systems, combined with the need for a mechanism to induce active or passive phase locking between resonator modes, has hindered their realisation at the nanoscale. Here, we demonstrate that GaAs-AlGaAs nanowire lasers are capable of emitting pairs of phase-locked picosecond laser pulses when subject to non-resonant pulsed optical excitation with a repetition frequency up to ~200GHz. By probing the two-pulse interference that emerges within the homogeneously broadened laser emission, we show that the optical phase is preserved over timescales extending beyond ~30ps, much longer than the emitted laser pulse duration (~2ps). Simulations performed by solving the optical Bloch equations produce good quantitative agreement with experiments, revealing how the phase information is stored in the gain medium close to transparency. Our results open the way to applications such as on-chip, ultra-sensitive Ramsey comb spectroscopy. △ Less

Submitted 7 March, 2016; originally announced March 2016.

A few-emitter solid-state multi-exciton laser

Authors: S. Lichtmannecker, M. Florian, T. Reichert, M. Blauth, M. Bichler, F. Jahnke, J. J. Finley, C. Gies, M. Kaniber

Abstract: We report a combined experimental and theoretical study of non-conventional lasing from higher multi-exciton states of a few quantum dot-photonic crystal nanocavity. We show that the photon output is fed from saturable quantum emitters rather than a non-saturable background despite being rather insensitive to the spectral position of the mode. Although the exciton transitions of each quantum dot a… ▽ More We report a combined experimental and theoretical study of non-conventional lasing from higher multi-exciton states of a few quantum dot-photonic crystal nanocavity. We show that the photon output is fed from saturable quantum emitters rather than a non-saturable background despite being rather insensitive to the spectral position of the mode. Although the exciton transitions of each quantum dot are detuned by up to $160$ cavity linewidths, we observe that strong excitation populates a multitude of closely spaced multi-exciton states, which partly overlap spectrally with the mode. The limited number of emitters is confirmed by a complete saturation of the mode intensity at strong pum**, providing sufficient gain to reach stimulated emission, whilst being accompanied by a distinct lasing threshold. Detailed second-order photon-correlation measurements unambiguously identify the transition to lasing for strong pum** and, most remarkably, reveal super-thermal photon bunching with $g^{(2)}(0)>2$ below lasing threshold. Based on our microscopic theory, a pump-rate dependent $β$-factor $β(P)$ is needed to describe the nanolaser and account for the interplay of multi-exciton transitions in the few-emitter gain medium. Moreover, we theoretically predict that the super-thermal bunching is related to dipole-anticorrelated multi-exciton recombination channels via sub- and super-radiant coupling below and above lasing threshold, respectively. Our results provide new insights into the microscopic light-matter-coupling of spatially separated emitters coupled to a common cavity mode and, thus, provides a complete understanding of stimulated emission in nanolasers with discrete emitters. △ Less

Submitted 3 March, 2016; v1 submitted 12 February, 2016; originally announced February 2016.

Stark effect spectroscopy of mono- and few-layer MoS$_{2}$

Authors: Julian Klein, Jakob Wierzbowski, Armin Regler, Jonathan Becker, Florian Heimbach, Kai Müller, Michael Kaniber, Jonathan J. Finley

Abstract: We demonstrate electrical control of the A-exciton interband transition in mono- and few-layer $MoS_{2}$ crystals embedded into photocapacitor devices via the DC Stark effect. Electric field dependent low-temperature photoluminescence spectroscopy reveals a significant tuneability of the A-exciton transition energy, up to $\sim 16 meV$, from which we extract the mean DC exciton polarisability… ▽ More We demonstrate electrical control of the A-exciton interband transition in mono- and few-layer $MoS_{2}$ crystals embedded into photocapacitor devices via the DC Stark effect. Electric field dependent low-temperature photoluminescence spectroscopy reveals a significant tuneability of the A-exciton transition energy, up to $\sim 16 meV$, from which we extract the mean DC exciton polarisability $<\barβ>_{N} = (0.58 \pm 0.25) \cdot 10^{-8} DmV^{-1}$. The exciton polarisability is shown to be layer-independent, indicating a strong localisation of both electron and hole wave functions in each individual layer. △ Less

Submitted 5 February, 2016; originally announced February 2016.

Comments: 19 pages, 4 figures in Nano Lett. 2016

Journal ref: Nano Lett. 16, 1554 (2016)

Surface plasmon resonance spectroscopy of single bowtie nano-antennas using a differential reflectivity method

Authors: M. Kaniber, K. Schraml, A. Regler, J. Bartl, G. Glashagen, F. Flassig, J. Wierzbowski, J. J. Finley

Abstract: We report on the structural and optical properties of individual bowtie nanoantennas both on glass and semiconducting GaAs substrates. The antennas on glass (GaAs) are shown to be of excellent quality and high uniformity reflected by narrow size distributions with standard deviations for the triangle and gap size of $σ_s^{glass}=4.5nm$ ($σ_s^{GaAs}=2.6nm$) and $σ_g^{glass}=5.4nm$ (… ▽ More We report on the structural and optical properties of individual bowtie nanoantennas both on glass and semiconducting GaAs substrates. The antennas on glass (GaAs) are shown to be of excellent quality and high uniformity reflected by narrow size distributions with standard deviations for the triangle and gap size of $σ_s^{glass}=4.5nm$ ($σ_s^{GaAs}=2.6nm$) and $σ_g^{glass}=5.4nm$ ($σ_g^{GaAs}=3.8nm$), respectively. The corresponding optical properties of individual nanoantennas studied by differential reflection spectroscopy show a strong reduction of the localised surface plasmon polariton resonance linewidth from $0.21eV$ to $0.07eV$ upon reducing the antenna size from $150nm$ to $100nm$. This is attributed to the absence of inhomogeneous broadening as compared to optical measurements on nanoantenna ensembles. The inter-particle coupling of an individual bowtie nanoantenna, which gives rise to strongly localised and enhanced electromagnetic hotspots, is demonstrated using polarization-resolved spectroscopy, yielding a large degree of linear polarization of $ρ_{max}\sim80\%$. The combination of highly reproducible nanofabrication and fast, non-destructive and non-contaminating optical spectroscopy paves the route towards future semiconductor-based nano-plasmonic circuits, consisting of multiple photonic and plasmonic entities. △ Less

Submitted 5 February, 2016; originally announced February 2016.

Journal ref: Scientific Reports 6, 23203 (2016)

Emission redistribution from a quantum dot-bowtie nanoantenna

Authors: A. Regler, K. Schraml, A. Lyamkina, M. Spiegl, K. Müller, J. Vuckovic, J. J. Finley, M. Kaniber

Abstract: We present a combined experimental and simulation study of a single self-assembled InGaAs quantum dot coupled to a nearby ($\sim 25nm$) plasmonic antenna. Micro-photoluminescence spectroscopy shows a $\sim 2.4\times$ increase of intensity, which is attributed to spatial far-field redistribution of the emission from the quantum dot-antenna system. Power-dependent studies show similar saturation pow… ▽ More We present a combined experimental and simulation study of a single self-assembled InGaAs quantum dot coupled to a nearby ($\sim 25nm$) plasmonic antenna. Micro-photoluminescence spectroscopy shows a $\sim 2.4\times$ increase of intensity, which is attributed to spatial far-field redistribution of the emission from the quantum dot-antenna system. Power-dependent studies show similar saturation powers of $2.5μW$ for both coupled and uncoupled quantum dot emission in polarization-resolved measurements. Moreover, time-resolved spectroscopy reveals the absence of Purcell-enhancement of the quantum dot coupled to the antenna as compared to an uncoupled dot, yielding comparable exciton lifetimes of $τ\sim0.5ns$. This observation is supported by numerical simulations, suggesting only minor Purcell-effects of $<2\times$ for emitter-antenna separations $>25nm$. The observed increased emission from a coupled quantum dot-plasmonic antenna system is found to be in good qualitative agreement with numerical simulations and will lead to a better understanding of light-matter-coupling in such novel semiconductor-plasmonic hybrid systems △ Less

Submitted 5 February, 2016; originally announced February 2016.

Journal ref: J. Nanophoton. 10, 033509 (2016)

Integrated superconducting detectors on semiconductors for quantum optics applications

Authors: Michael Kaniber, Fabian Flassig, Günther Reithmaier, Rudolf Gross, Jonathan J. Finley

Abstract: Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit non-classical states of light for distributed photon based quantum information technologies. In this article, we review our recent achievements on the growth, nanofabrication and integration of high-quality, superconducting niobium nitride thin films on optically active, semiconducting GaAs s… ▽ More Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit non-classical states of light for distributed photon based quantum information technologies. In this article, we review our recent achievements on the growth, nanofabrication and integration of high-quality, superconducting niobium nitride thin films on optically active, semiconducting GaAs substrates and their patterning to realise highly efficient and ultrafast superconducting detectors on semiconductor nanomaterials containing quantum dots. Our state-of-the-art detectors reach external detection quantum efficiencies up to 20% for ~4nm thin films and single photon timing resolutions <72ps. We discuss the integration of such detectors into quantum dot loaded, semiconductor ridge waveguides, resulting in the on-chip, time-resolved detection of quantum dot luminescence. Furthermore, a prototype quantum optical circuit is demonstrated that enabled the on-chip generation of resonance fluorescence from an individual InGaAs quantum dot, with a line width <15 $μ$eV displaced by 1mm from the superconducting detector on the very same semiconductor chip. Thus, all key components required for prototype quantum photonic circuits with sources, optical components and detectors on the same chip are reported. △ Less

Submitted 22 January, 2016; originally announced January 2016.

Journal ref: Appl. Phys. B 122, 115 (2016)

Dynamic acousto-mechanical control of a strongly coupled photonic molecule

Authors: Stephan Kapfinger, Thorsten Reichert, Stefan Lichtmannecker, Kai Müller, Jonathan J. Finley, Achim Wixforth, Michael Kaniber, Hubert J. Krenner

Abstract: Two-dimensional photonic crystal membranes provide a versatile planar architecture for integrated photonics to control the propagation of light on a chip employing high quality optical cavities, waveguides, beamsplitters or dispersive elements. When combined with highly non-linear quantum emitters, quantum photonic networks operating at the single photon level come within reach. Towards large-scal… ▽ More Two-dimensional photonic crystal membranes provide a versatile planar architecture for integrated photonics to control the propagation of light on a chip employing high quality optical cavities, waveguides, beamsplitters or dispersive elements. When combined with highly non-linear quantum emitters, quantum photonic networks operating at the single photon level come within reach. Towards large-scale quantum photonic networks, selective dynamic control of individual components and deterministic interactions between different constituents are of paramount importance. This indeed calls for switching speeds ultimately on the system's native timescales. For example, manipulation via electric fields or all-optical means have been employed for switching in nanophotonic circuits and cavity quantum electrodynamics studies. Here, we demonstrate dynamic control of the coherent interaction between two coupled photonic crystal nanocavities forming a photonic molecule. By using an electrically generated radio frequency surface acoustic wave we achieve optomechanical tuning, demonstrate operating speeds more than three orders of magnitude faster than resonant mechanical approaches. Moreover, the tuning range is large enough to compensate for the inherent fabrication-related cavity mode detuning. Our findings open a route towards nanomechanically gated protocols, which hitherto have inhibited the realization in all-optical schemes. △ Less

Submitted 30 July, 2015; originally announced July 2015.

Comments: submitted manuscript

Journal ref: Nature Communications 6, 8540 (2015)

Towards on-chip generation, routing and detection of non-classical light

Authors: Fabian Flassig, Michael Kaniber, Günther Reithmaier, Kai Müller, Alexander Andrejew, Rudolf Gross, Jelena Vuçkovic, Jonathan Finley

Abstract: We fabricate an integrated photonic circuit with emitter, waveguide and detector on one chip, based on a hybrid superconductor-semiconductor system. We detect photoluminescence from self-assembled InGaAs quantum dots on-chip using NbN superconducting nanowire single photon detectors. Using the fast temporal response of these detectors we perform time-resolved studies of non-resonantly excited quan… ▽ More We fabricate an integrated photonic circuit with emitter, waveguide and detector on one chip, based on a hybrid superconductor-semiconductor system. We detect photoluminescence from self-assembled InGaAs quantum dots on-chip using NbN superconducting nanowire single photon detectors. Using the fast temporal response of these detectors we perform time-resolved studies of non-resonantly excited quantum dots. By introducing a temporal filtering to the signal, we are able to resonantly excite the quantum dot and detect its resonance uorescence on-chip with the integrated superconducting single photon detector. △ Less

Submitted 19 March, 2015; v1 submitted 19 February, 2015; originally announced February 2015.

Comments: 9 pages, 5 figures

Journal ref: Proc. SPIE 9373, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII, 937305 (February 27, 2015)

Linear and Non-linear Response of Lithographically Defined Plasmonic Nanoantennas

Authors: K. Schraml, M. Kaniber, J. Bartl, G. Glashagen, A. Regler, T. Campbell, J. J. Finley

Abstract: We present numerical studies, nano-fabrication and optical characterization of bowtie nanoantennas demonstrating their superior performance with respect to the electric field enhancement as compared to other Au nanoparticle shapes. For optimized parameters, we found mean intensity enhancement factors >2300x in the feed-gap of the antenna, decreasing to 1300x when introducing a 5nm titanium adhesio… ▽ More We present numerical studies, nano-fabrication and optical characterization of bowtie nanoantennas demonstrating their superior performance with respect to the electric field enhancement as compared to other Au nanoparticle shapes. For optimized parameters, we found mean intensity enhancement factors >2300x in the feed-gap of the antenna, decreasing to 1300x when introducing a 5nm titanium adhesion layer. Using electron beam lithography we fabricated gold bowties on various substrates with feed-gaps and tip radii as small as 10nm. In polarization resolved measurement we experimentally observed a blue shift of the surface plasmon resonance from 1.72eV to 1.35eV combined with a strong modification of the electric field enhancement in the feed-gap. Under excitation with a 100fs pulsed laser source, we observed non-linear light emission arising from two-photon photoluminescence and second harmonic generation from the gold. The bowtie nanoantenna shows a high potential for outstanding conversion efficiencies and the enhancement of other optical effects which could be exploited in future nanophotonic devices. △ Less

Submitted 20 February, 2015; v1 submitted 18 February, 2015; originally announced February 2015.

Journal ref: Proceedings of SPIE 9371, 93711D (2015)

On-chip generation, routing and detection of quantum light

Authors: Günther Reithmaier, Michael Kaniber, Fabian Flassig, Stefan Lichtmannecker, Kai Müller, Alexander Andrejew, Jelena Vuckovic, Rudolf Gross, Jonathan Finley

Abstract: Semiconductor based photonic information technologies are rapidly being pushed to the quantum limit where non-classical states of light can be generated, manipulated and exploited in prototypical quantum optical circuits. Here, we report the on-chip generation of quantum light from individual, resonantly excited self-assembled InGaAs quantum dots, efficient routing over length scales $\geq 1$ mm v… ▽ More Semiconductor based photonic information technologies are rapidly being pushed to the quantum limit where non-classical states of light can be generated, manipulated and exploited in prototypical quantum optical circuits. Here, we report the on-chip generation of quantum light from individual, resonantly excited self-assembled InGaAs quantum dots, efficient routing over length scales $\geq 1$ mm via GaAs ridge waveguides and in-situ detection using evanescently coupled integrated NbN superconducting single photon detectors fabricated on the same chip. By temporally filtering the time-resolved luminescence signal stemming from single, resonantly excited quantum dots we use the prototypical quantum optical circuit to perform time-resolved excitation spectroscopy on single dots and demonstrate resonant fluorescence with a line-width of $10 \pm 1 \ μ$eV; key elements needed for the use of single photons in prototypical quantum photonic circuits. △ Less

Submitted 15 August, 2014; v1 submitted 10 August, 2014; originally announced August 2014.

Journal ref: Nano Letters 15, 5208 (2015)

Highly directed emission from self-assembled quantum dots into guided modes in disordered photonic crystal waveguides

Authors: Thorsten Reichert, Stefan Lichtmannecker, Günther Reithmaier, Martin Zeitlmair, Julia Wembacher, Andreas Rauscher, Max Bichler, Kai Müller, Michael Kaniber, Jonathan James Finley

Abstract: We explore the dynamics and directionality of spontaneous emission from self-assembled In(Ga)As quantum dots into TE-polarised guided modes in GaAs two-dimensional photonic crystal waveguides. The local group velocity of the guided waveguide mode is probed, with values as low as $\sim 1.5\%\times c$ measured close to the slow-light band edge. By performing complementary continuous wave and time-re… ▽ More We explore the dynamics and directionality of spontaneous emission from self-assembled In(Ga)As quantum dots into TE-polarised guided modes in GaAs two-dimensional photonic crystal waveguides. The local group velocity of the guided waveguide mode is probed, with values as low as $\sim 1.5\%\times c$ measured close to the slow-light band edge. By performing complementary continuous wave and time-resolved measurements with detection along, and perpendicular to the waveguide axis we probe the fraction of emission into the waveguide mode ($β$-factor). For dots randomly positioned within the unit cell of the photonic crystal waveguide our results show that the emission rate varies from $\geq 1.55$ $ns^{-1}$ close to the slow-light band edge to $\leq 0.25$ $ns^{-1}$ within the two-dimensional photonic bandgap. We measure an average Purcell-factor of $\sim 2\times$ for dots randomly distributed within the waveguide and maximum values of $β\sim 90 \%$ close to the slow light band edge. Spatially resolved measurements performed by exciting dots at a well controlled distance $0-45$ μm from the waveguide facet highlight the impact of disorder on the slow-light dispersion. Although disorder broadens the spectral width of the slow light region of the waveguide dispersion from $δE_{d}\leq 0.5$ meV to $>6$ meV, we find that emission is nevertheless primarily directed into propagating waveguide modes. The ability to control the rate and directionality of emission from isolated quantum emitters by placing them in a tailored photonic environment provides much promise for the use of slow-light phenomena to realise efficient single photon sources for quantum optics in a highly integrated setting. △ Less

Submitted 24 July, 2014; originally announced July 2014.

Journal ref: Phys. Rev. B 90, 115310 (2014)

A carrier relaxation bottleneck probed in single InGaAs quantum dots using integrated superconducting single photon detectors

Authors: G. Reithmaier, F. Flassig, P. Hasch, S. Lichtmannecker, K. Müller, J. Vuckovic, R. Gross, M. Kaniber, J. J. Finley

Abstract: Using integrated superconducting single photon detectors we probe ultra-slow exciton capture and relaxation dynamics in single self-assembled InGaAs quantum dots embedded in a GaAs ridge waveguide. Time-resolved luminescence measurements performed with on- and off-chip detection reveal a continuous decrease in the carrier relaxation time from 1.22 $\pm$ 0.07 ns to 0.10 $\pm$ 0.07 ns upon increasin… ▽ More Using integrated superconducting single photon detectors we probe ultra-slow exciton capture and relaxation dynamics in single self-assembled InGaAs quantum dots embedded in a GaAs ridge waveguide. Time-resolved luminescence measurements performed with on- and off-chip detection reveal a continuous decrease in the carrier relaxation time from 1.22 $\pm$ 0.07 ns to 0.10 $\pm$ 0.07 ns upon increasing the number of non-resonantly injected carriers. By comparing off-chip time-resolved spectroscopy with spectrally integrated on-chip measurements we identify the observed dynamics in the rise time ($τ_r$) as arising from a relaxation bottleneck at low excitation levels. From the comparison with the temporal dynamics of the single exciton transition with the on-chip emission signal, we conclude that the relaxation bottleneck is circumvented by the presence of charge carriers occupying states in the bulk material and the two-dimensional wetting layer continuum. A characteristic -2/3 power law dependence of the rise time is observed suggesting Auger-type scattering between carriers trapped in the quantum dot and the two-dimensional wetting layer continuum which circumvents the phonon relaxation bottleneck. △ Less

Submitted 15 August, 2014; v1 submitted 2 July, 2014; originally announced July 2014.

Journal ref: Appl. Phys. Lett. 105, 081107 (2014)

Imaging surface plasmon polaritons using proximal self-assembled InGaAs quantum dots

Authors: Gregor Bracher, Konrad Schraml, Mäx Blauth, Jakob Wierzbowski, Nicolas Coca Lopez, Max Bichler, Kai Müller, Jonathan J. Finley, Michael Kaniber

Abstract: We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiati… ▽ More We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiative processes do not play a major role for separations down to $\sim 10 nm$. A polarized laser beam focused on one end of the plasmonic nanostructure generates propagating surface plasmon polaritons that, in turn, create electron-hole pairs in the GaAs substrate during propagation. These free carriers are subsequently captured by the quantum dots $\sim 25 nm$ below the surface, giving rise to luminescence. The intensity of the spectrally integrated quantum dot luminescence is used to image the propagating plasmon modes. As the waveguide width reduces from $5 μm$ to $1 μm$, we clearly observe different plasmonic modes at the remote waveguide end, enabling their direct imaging in real space. This imaging technique is applied to a plasmonic beamsplitter facilitating the determination of the splitting ratio between the two beamsplitter output ports as the interaction length $L_i$ is varied. A splitting ratio of $50:50$ is observed for $L_i\sim 9\pm1 μm$ and $1 μm$ wide waveguides for excitation energies close to the GaAs band edge. Our experimental findings are in good agreement with mode profile and finite difference time domain simulations for both waveguides and beamsplitters. △ Less

Submitted 26 May, 2014; originally announced May 2014.

Comments: 20 pages, 5 figures (color)

Journal ref: J. Appl. Phys. 116, 033101 (2014)

Optical properties and interparticle coupling of plasmonic bowtie nanoantennas on a semiconducting substrate

Authors: K. Schraml, M. Spiegl, M. Kammerlocher, G. Bracher, J. Bartl, T. Campbell, J. J. Finley, M. Kaniber

Abstract: We present the simulation, fabrication and optical characterization of plasmonic gold bowtie nanoantennas on a semiconducting GaAs substrate as geometrical parameters such as size, feed gap, height and polarization of the incident light are varied. The surface plasmon resonance was probed using white light reflectivity on an array of nominally identical, 35nm thick Au antennas. To elucidate the in… ▽ More We present the simulation, fabrication and optical characterization of plasmonic gold bowtie nanoantennas on a semiconducting GaAs substrate as geometrical parameters such as size, feed gap, height and polarization of the incident light are varied. The surface plasmon resonance was probed using white light reflectivity on an array of nominally identical, 35nm thick Au antennas. To elucidate the influence of the semiconducting, high refractive index substrate, all experiments were compared using nominally identical structures on glass. Besides a linear shift of the surface plasmon resonance from 1.08eV to 1.58eV when decreasing the triangle size from 170nm to 100nm on GaAs, we observed a global redshift by 0.25 +- 0.05eV with respect to nominally identical structures on glass. By performing polarization resolved measurements and comparing results with finite difference time domain simulations, we determined the near field coupling between the two triangles composing the bowtie antenna to be 8x stronger when the antenna is on a glass substrate compared to when it is on a GaAs substrate. The results obtained are of strong relevance for the integration of lithographically defined plasmonic nanoantennas on semiconducting substrates and, therefore, for the development of novel optically active plasmonic-semiconducting nanostructures. △ Less

Submitted 13 May, 2014; originally announced May 2014.

Journal ref: Physical Review B 90, 035435 (2014)

Optical study of lithographically defined, subwavelength plasmonic wires and their coupling to embedded quantum emitters

Authors: Gregor Bracher, Konrad Schraml, Marcus Ossiander, Simon Frederick, Jonathan J. Finley, Michael Kaniber

Abstract: We present an optical investigation of surface plasmon polaritons propagating along nanoscale Au-wires, lithographically defined on GaAs substrates. A two-axis confocal microscope was used to perform spatially and polarization resolved measurements in order to confirm the guiding of surface plasmon polaritons over lengths ranging from $5-20 μm$ along nanowires with a lateral dimension of only… ▽ More We present an optical investigation of surface plasmon polaritons propagating along nanoscale Au-wires, lithographically defined on GaAs substrates. A two-axis confocal microscope was used to perform spatially and polarization resolved measurements in order to confirm the guiding of surface plasmon polaritons over lengths ranging from $5-20 μm$ along nanowires with a lateral dimension of only $\approx 100 nm$. Finite difference time domain simulations are used to corroborate our experimental observations and highlight the potential to couple proximal quantum dot emitters to propagating plasmon modes in such extreme sub-wavelength devices. Our findings are of strong relevance for the development of semiconductor based integrated plasmonic and active quantum plasmonic nanosystems that merge quantum emitters with nanoscale plasmonic elements. △ Less

Submitted 7 January, 2014; v1 submitted 26 July, 2013; originally announced July 2013.

Comments: 6 pages, 4 figures

Emitters of $N$-photon bundles

Authors: C. Sánchez Muñoz, E. del Valle, A. González Tudela, S. Lichtmannecker, K. Müller, M. Kaniber, C. Tejedor, J. J. Finley, F. P. Laussy

Abstract: We propose a scheme based on the coherent excitation of a two-level system in a cavity to generate an ultrabright CW and focused source of quantum light that comes in groups (bundles) of $N$ photons, for an integer $N$ tunable with the frequency of the exciting laser. We define a new quantity, the \emph{purity} of $N$-photon emission, to describe the percentage of photons emitted in bundles, thus… ▽ More We propose a scheme based on the coherent excitation of a two-level system in a cavity to generate an ultrabright CW and focused source of quantum light that comes in groups (bundles) of $N$ photons, for an integer $N$ tunable with the frequency of the exciting laser. We define a new quantity, the \emph{purity} of $N$-photon emission, to describe the percentage of photons emitted in bundles, thus bypassing the limitations of Glauber correlation functions. We focus on the case $1\le N\le3$ and show that close to 100% of two-photon emission and 90% of three-photon emission is within reach of state of the art cavity QED samples. The statistics of the bundles emission shows that various regimes---from $N$-photon lasing to $N$-photon guns---can be realized. This is evidenced through generalized correlation functions that extend the standard definitions to the multi-photon level. △ Less

Submitted 10 October, 2013; v1 submitted 6 June, 2013; originally announced June 2013.

Comments: Introduce the n-th order N-photon correlation functions. Reorganized to emphasize the N-photon emitter, now extended to the antibunching regime, rather than only coherent emission as previsouly

Broadband Purcell enhanced emission dynamics of quantum dots in linear photonic crystal waveguides

Authors: Arne Laucht, Thomas Günthner, Simon Pütz, Rebecca Saive, Simon Frédérick, Norman Hauke, Max Bichler, Markus-Christian Amann, Alexander W. Holleitner, Michael Kaniber, Jonathan J. Finley

Abstract: The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally, and time-resolved photoluminescence measurements, detecting normal to the plane of the photonic crystal. For quantum dots emitting in resonance with the wavegui… ▽ More The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally, and time-resolved photoluminescence measurements, detecting normal to the plane of the photonic crystal. For quantum dots emitting in resonance with the waveguide mode, a ~21x enhancement of photoluminescence intensity is observed as compared to dots in the unprocessed region of the wafer. This enhancement can be traced back to the Purcell enhanced emission of quantum dots into leaky and guided modes of the waveguide with moderate Purcell factors up to ~4x. Emission into guided modes is shown to be efficiently scattered out of the waveguide within a few microns, contributing to the out-of-plane emission and allowing the use of photonic crystal waveguides as broadband, efficiency-enhancing structures for surface-emitting diodes or single photon sources. △ Less

Submitted 7 May, 2012; originally announced May 2012.

Comments: 13 pages, 4 figures

Journal ref: Journal of Applied Physics 112, 093520 (2012)

Coupling of guided Surface Plasmon Polaritons to proximal self-assembled InGaAs Quantum Dots

Authors: Gregor Bracher, Konrad Schraml, Mäx Blauth, Clemens Jakubeit, Kai Müller, Gregor Koblmüller, Max Bichler, Michael Kaniber, Jonathan J. Finley

Abstract: We present investigations of the propagation length of guided surface plasmon polaritons along Au waveguides on GaAs and their coupling to near surface InGaAs self-assembled quantum dots. Our results reveal surface plasmon propagation lengths ranging from 13.4 {\pm} 1.7 μm to 27.5 {\pm} 1.5 μm as the width of the waveguide increases from 2-5 μm. Experiments performed on active structures containin… ▽ More We present investigations of the propagation length of guided surface plasmon polaritons along Au waveguides on GaAs and their coupling to near surface InGaAs self-assembled quantum dots. Our results reveal surface plasmon propagation lengths ranging from 13.4 {\pm} 1.7 μm to 27.5 {\pm} 1.5 μm as the width of the waveguide increases from 2-5 μm. Experiments performed on active structures containing near surface quantum dots clearly show that the propagating plasmon mode excites the dot, providing a new method to spatially image the surface plasmon mode. We use low temperature confocal microscopy with polarization control in the excitation and detection channel. After excitation, plasmons propagate along the waveguide and are scattered into the far field at the end. By comparing length and width evolution of the waveguide losses we determine the plasmon propagation length to be 27.5 {\pm} 1.5 μm at 830 nm (for a width of 5 μm), reducing to 13.4 {\pm} 1.7 μm for a width of 2 μm. For active structures containing low density InGaAs quantum dots at a precisely controlled distance 7-120 nm from the Au-GaAs interface, we probed the mutual coupling between the quantum dot and plasmon mode. These investigations reveal a unidirectional energy transfer from the propagating surface plasmon to the quantum dot. The exquisite control of the position and shape afforded by lithography combined with near surface QDs promises efficient on-chip generation and guiding of single plasmons for future applications in nanoscale quantum optics operating below the diffraction limit. △ Less

Submitted 22 March, 2012; v1 submitted 21 March, 2012; originally announced March 2012.

Comments: 9 pages, 4 figures, SPIE Photonics West

A Waveguide-Coupled On-Chip Single Photon Source

Authors: A. Laucht, S. Pütz, T. Günthner, N. Hauke, R. Saive, S. Frédérick, M. Bichler, M. -C. Amann, A. W. Holleitner, M. Kaniber, J. J. Finley

Abstract: We investigate single photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing confocal microscopy measurements on single dots positioned within the waveguide, we locate their positions with a precision better than 0.5 \mum. Time-resolved photoluminescence and photon autocorrelation measurements are… ▽ More We investigate single photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing confocal microscopy measurements on single dots positioned within the waveguide, we locate their positions with a precision better than 0.5 \mum. Time-resolved photoluminescence and photon autocorrelation measurements are used to prove the single photon character of the emission into the propagating waveguide mode. The results obtained demonstrate that such nanostructures can be used to realize an on-chip, highly directed single photon source with single mode spontaneous emision coupling efficiencies in excess of beta~85 % and the potential to reach maximum emission rates >1 GHz. △ Less

Submitted 31 January, 2012; v1 submitted 24 January, 2012; originally announced January 2012.

Comments: submitted on September 26, 2011

Journal ref: Phys. Rev. X 2, 011014 (2012)

Direct measurement of plasmon propagation lengths on lithographically defined metallic waveguides on GaAs

Authors: G. Bracher, K. Schraml, C. Jakubeit, M. Kaniber, J. J. Finley

Abstract: We present optical investigations of rectangular surface plasmon polariton waveguides lithographically defined on GaAs substrates. The plasmon propagation length is directly determined using a confocal microscope, with independent polarization control in both excitation and detection channels. Surface plasmon polaritons are launched along the waveguide using a lithographically defined defect at on… ▽ More We present optical investigations of rectangular surface plasmon polariton waveguides lithographically defined on GaAs substrates. The plasmon propagation length is directly determined using a confocal microscope, with independent polarization control in both excitation and detection channels. Surface plasmon polaritons are launched along the waveguide using a lithographically defined defect at one end. At the remote end of the waveguide they scatter into the far-field, where they are imaged using a CCD camera. By monitoring the length dependence of the intensity of scattered light from the waveguide end, we directly extract the propagation length, obtaining values ranging from LSPP = 10-40 μm depending on the waveguide width (w=2-5 μm) and excitation wavelength (760-920 nm). Results are in good accord with theoretical expectations demonstrating the high quality of the lithographically defined structures. The results obtained are of strong relevance for the development of future semiconductor based integrated plasmonic technologies. △ Less

Submitted 19 October, 2011; originally announced October 2011.

A Correlation between the Emission Intensity of Self-Assembled Germanium Islands and the Quality Factor of Silicon Photonic Crystal Nanocavities

Authors: N. Hauke, S. Lichtmannecker, T. Zabel, F. P. Laussy, A. Laucht, M. Kaniber, D. Bougeard, G. Abstreiter, J. J. Finley, Y. Arakawa

Abstract: We present a comparative micro-photoluminescence study of the emission intensity of self-assembled germanium islands coupled to the resonator mode of two-dimensional silicon photonic crystal defect nanocavities. The emission intensity is investigated for cavity modes of L3 and Hexapole cavities with different cavity quality factors. For each of these cavities many nominally identical samples are p… ▽ More We present a comparative micro-photoluminescence study of the emission intensity of self-assembled germanium islands coupled to the resonator mode of two-dimensional silicon photonic crystal defect nanocavities. The emission intensity is investigated for cavity modes of L3 and Hexapole cavities with different cavity quality factors. For each of these cavities many nominally identical samples are probed to obtain reliable statistics. As the quality factor increases we observe a clear decrease in the average mode emission intensity recorded under comparable optical pum** conditions. This clear experimentally observed trend is compared with simulations based on a dissipative master equation approach that describes a cavity weakly coupled to an ensemble of emitters. We obtain evidence that reabsorption of photons emitted into the cavity mode is responsible for the observed trend. In combination with the observation of cavity linewidth broadening in power dependent measurements, we conclude that free carrier absorption is the limiting effect for the cavity mediated light enhancement under conditions of strong pum**. △ Less

Submitted 22 March, 2011; v1 submitted 19 March, 2011; originally announced March 2011.

Comments: 8 pages, 5 figures

Electrical control of the exciton-biexciton splitting in a single self-assembled InGaAs quantum dots

Authors: M. Kaniber, M. F. Huck, K. Müller, E. C. Clark, F. Troiani, M. Bichler, H. J. Krenner, J. J. Finley

Abstract: We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are compared to theoretical calculations of the relative energies of exciton and biexciton. Cascaded decay from the manifold of single exciton-biexciton states has bee… ▽ More We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are compared to theoretical calculations of the relative energies of exciton and biexciton. Cascaded decay from the manifold of single exciton-biexciton states has been predicted to be a new concept to generate entangled photon pairs on demand without the need to suppress the fine structures splitting of the neutral exciton. △ Less

Submitted 23 July, 2011; v1 submitted 10 September, 2010; originally announced September 2010.

Journal ref: Nanotechnolgy 22, 324202 (2011)

Non-resonant feeding of photonic crystal nanocavity modes by quantum dots

Authors: A. Laucht, N. Hauke, A. Neumann, T. Günthner, F. Hofbauer, A. Mohtashami, K. Müller, G. Böhm, M. Bichler, M. -C. Amann, M. Kaniber, J. J. Finley

Abstract: We experimentally probe the non-resonant feeding of photons into the optical mode of a two dimensional photonic crystal nanocavity from the discrete emission from a quantum dot. For a strongly coupled system of a single exciton and the cavity mode, we track the detuning-dependent photoluminescence intensity of the polariton peaks at different lattice temperatures. At low temperatures we observe a… ▽ More We experimentally probe the non-resonant feeding of photons into the optical mode of a two dimensional photonic crystal nanocavity from the discrete emission from a quantum dot. For a strongly coupled system of a single exciton and the cavity mode, we track the detuning-dependent photoluminescence intensity of the polariton peaks at different lattice temperatures. At low temperatures we observe a clear asymmetry in the emission intensity depending on whether the exciton is at higher or lower energy than the cavity mode. At high temperatures this asymmetry vanishes when the probabilities to emit or absorb a phonon become similar. For a different dot-cavity system where the cavity mode is detuned by ΔE>5 meV to lower energy than the single exciton transitions emission from the mode remains correlated with the quantum dot as demonstrated unambiguously by cross-correlation photon counting experiments. By monitoring the temporal evolution of the photoluminescence spectrum, we show that feeding of photons into the mode occurs from multi-exciton transitions. We observe a clear anti-correlation of the mode and single exciton emission; the mode emission quenches as the population in the system reduces towards the single exciton level whilst the intensity of the mode emission tracks the multi-exciton transitions. △ Less

Submitted 18 July, 2010; originally announced July 2010.

Journal ref: J. Appl. Phys. 109, 102404 (2011)

Temporal Monitoring of Non-resonant Feeding of Semiconductor Nanocavity Modes by Quantum Dot Multiexciton Transitions

Authors: A. Laucht, M. Kaniber, A. Mohtashami, N. Hauke, M. Bichler, J. J. Finley

Abstract: We experimentally investigate the non-resonant feeding of photons into the optical mode of a zero dimensional nanocavity by quantum dot multiexciton transitions. Power dependent photoluminescence measurements reveal a super-linear power dependence of the mode emission, indicating that the emission stems from multiexcitons. By monitoring the temporal evolution of the photoluminescence spectrum, we… ▽ More We experimentally investigate the non-resonant feeding of photons into the optical mode of a zero dimensional nanocavity by quantum dot multiexciton transitions. Power dependent photoluminescence measurements reveal a super-linear power dependence of the mode emission, indicating that the emission stems from multiexcitons. By monitoring the temporal evolution of the photoluminescence spectrum, we observe a clear anticorrelation of the mode and single exciton emission; the mode emission quenches as the population in the system reduces towards the single exciton level whilst the intensity of the mode emission tracks the multi-exciton transitions. Our results lend strong support to a recently proposed mechanism mediating the strongly non-resonant feeding of photons into the cavity mode. △ Less

Submitted 15 March, 2010; originally announced March 2010.

Journal ref: Physical Review B 81, 241302(R) (2010)

Mutual Coupling of two Semiconductor Quantum Dots via an Optical Nanocavity Mode

Authors: A. Laucht, J. M. Villas-Bôas, S. Stobbe, N. Hauke, F. Hofbauer, G. Böhm, P. Lodahl, M. -C. Amann, M. Kaniber, J. J. Finley

Abstract: We present an experimental and theoretical study of a system consisting of two spatially separated self-assembled InGaAs quantum dots strongly coupled to a single optical nanocavity mode. Due to their different size and compositional profiles, the two quantum dots exhibit markedly different DC Stark shifts. This allows us to tune them into mutual resonance with each other and a photonic crystal na… ▽ More We present an experimental and theoretical study of a system consisting of two spatially separated self-assembled InGaAs quantum dots strongly coupled to a single optical nanocavity mode. Due to their different size and compositional profiles, the two quantum dots exhibit markedly different DC Stark shifts. This allows us to tune them into mutual resonance with each other and a photonic crystal nanocavity mode as a bias voltage is varied. Photoluminescence measurements show a characteristic triple peak during the double anticrossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the entire set of emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots via the cavity mode, and the coupling between the two quantum dots when they are detuned from the cavity mode. We suggest that the resulting quantum V-system may be advantageous since dephasing due to incoherent losses from the cavity mode can be avoided. △ Less

Submitted 12 July, 2010; v1 submitted 18 December, 2009; originally announced December 2009.

Journal ref: Phys. Rev. B 82, 075305 (2010)

Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities

Authors: N. Hauke, T. Zabel, K. Mueller, M. Kaniber, A. Laucht, D. Bougeard, G. Abstreiter, J. J. Finley, Y. Arakawa

Abstract: We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from crystalline silicon at ~1.10 eV we observe a broad defect band luminescence from ~1.05-1.09 eV. Spatially resolved spectroscopy demonstrates that this defect band is p… ▽ More We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from crystalline silicon at ~1.10 eV we observe a broad defect band luminescence from ~1.05-1.09 eV. Spatially resolved spectroscopy demonstrates that this defect band is present only in the region where air-holes have been etched during the fabrication process. Detectable emission from the cavity mode persists up to room-temperature, in strong contrast the background emission vanishes for T > 150 K. An Ahrrenius type analysis of the temperature dependence of the luminescence signal recorded either in-resonance with the cavity mode, or weakly detuned, suggests that the higher temperature stability may arise from an enhanced internal quantum efficiency due to the Purcell-effect. △ Less

Submitted 4 December, 2009; originally announced December 2009.

Phonon-assisted transitions from quantum dot excitons to cavity photons

Authors: Ulrich Hohenester, Arne Laucht, Michael Kaniber, Norman Hauke, Abbas Mohtashami, Marek Seliger, Jonathan J. Finley

Abstract: For a single semiconductor quantum dot embedded in a microcavity, we theoretically and experimentally investigate phonon-assisted transitions between excitons and the cavity mode. Within the framework of the independent boson model we find that such transitions can be very efficient, even for relatively large exciton-cavity detunings of several millielectron volts. Furthermore, we predict a stro… ▽ More For a single semiconductor quantum dot embedded in a microcavity, we theoretically and experimentally investigate phonon-assisted transitions between excitons and the cavity mode. Within the framework of the independent boson model we find that such transitions can be very efficient, even for relatively large exciton-cavity detunings of several millielectron volts. Furthermore, we predict a strong detuning asymmetry for the exciton lifetime that vanishes for elevated lattice temperature. Our findings are corroborated by experiment, which turns out to be in good quantitative and qualitative agreement with theory. △ Less

Submitted 20 October, 2009; originally announced October 2009.

Journal ref: Phys. Rev. B 80, 201311(R) (2009)

Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires

Authors: D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Rossler, F. Peiro, J. R. Morante, L. Samuelson, G. Abstreiter, A. Fontcuberta i Morral

Abstract: The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.5… ▽ More The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band-offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms. △ Less

Submitted 9 July, 2009; originally announced July 2009.

Comments: 24 pages

Journal ref: Phys. Rev. B 80, 245325 (2009)

Photocurrent Properties of Freely Suspended Carbon Nanotubes under Uniaxial Strain

Authors: S. M. Kaniber, L. Song, J. P. Kotthaus, A. W. Holleitner

Abstract: The photocurrent properties of freely suspended single-walled carbon nanotubes (CNTs) are investigated as a function of uniaxial strain. We observe that at low strain, the photocurrent signal of the CNTs increases for increasing strain, while for large strain, the signal decreases, respectively. We interpret the non-monotonous behavior by a superposition of the influence of the uniaxial strain o… ▽ More The photocurrent properties of freely suspended single-walled carbon nanotubes (CNTs) are investigated as a function of uniaxial strain. We observe that at low strain, the photocurrent signal of the CNTs increases for increasing strain, while for large strain, the signal decreases, respectively. We interpret the non-monotonous behavior by a superposition of the influence of the uniaxial strain on the resistivity of the CNTs and the effects caused by Schottky contacts between the CNTs and the metal contacts. △ Less

Submitted 25 May, 2009; originally announced May 2009.

Dephasing of quantum dot exciton polaritons in electrically tunable nanocavities

Authors: A. Laucht, N. Hauke, J. M. Villas-Bôas, F. Hofbauer, M. Kaniber, G. Böhm, J. J. Finley

Abstract: We experimentally and theoretically investigate dephasing of zero dimensional microcavity polaritons in electrically tunable single dot photonic crystal nanocavities. Such devices allow us to alter the dot-cavity detuning in-situ and to directly probe the influence on the emission spectrum of varying the incoherent excitation level and the lattice temperature. By comparing our results with theor… ▽ More We experimentally and theoretically investigate dephasing of zero dimensional microcavity polaritons in electrically tunable single dot photonic crystal nanocavities. Such devices allow us to alter the dot-cavity detuning in-situ and to directly probe the influence on the emission spectrum of varying the incoherent excitation level and the lattice temperature. By comparing our results with theory we obtain the polariton dephasing rate and clarify its dependence on optical excitation power and lattice temperature. For low excitation levels we observe a linear temperature dependence, indicative of phonon mediated polariton dephasing. At higher excitation levels, excitation induced dephasing is observed due to coupling to the solid-state environment. The results provide new information on coherence properties of quantum dot microcavity polaritons. △ Less

Submitted 8 May, 2009; v1 submitted 30 April, 2009; originally announced April 2009.

Comments: Figure 2, panel (b) changed to logarithmic + linear scale

Journal ref: Phys. Rev. Lett. 103, 087405 (2009)

Electrical control of spontaneous emission and strong coupling for a single quantum dot

Authors: A. Laucht, F. Hofbauer, N. Hauke, J. Angele, S. Stobbe, M. Kaniber, G. Böhm, P. Lodahl, M. -C. Amann, J. J. Finley

Abstract: We report the design, fabrication and optical investigation of electrically tunable single quantum dot - photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. Unlike previous studies where the dot-cavity spectral detuning was varied by changing the lattice temperature, or by the adsorption of inert-gases at low temperatures,… ▽ More We report the design, fabrication and optical investigation of electrically tunable single quantum dot - photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. Unlike previous studies where the dot-cavity spectral detuning was varied by changing the lattice temperature, or by the adsorption of inert-gases at low temperatures, we demonstrate that the quantum confined Stark effect can be employed to quickly and reversibly switch the dot-cavity coupling simply by varying a gate voltage. Our results show that exciton transitions from individual dots can be tuned by ~4 meV relative to the nanocavity mode before the emission quenches due to carrier tunneling escape. This range is much larger than the typical linewidth of the high-Q cavity modes (~0.10 meV) allowing us to explore and contrast regimes where the dots couple to the cavity or decay by spontaneous emission into the 2D photonic bandgap. In the weak coupling regime, we show that the dot spontaneous emission rate can be tuned using a gate voltage, with Purcell factors >=7. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the highest-Q cavities (Q>=12000). Vacuum Rabi splittings up to ~0.13 meV are observed, much larger than the linewidths of either the decoupled exciton or cavity mode. These observations represent a voltage switchable optical non-linearity at the single photon level, paving the way towards on-chip dot based nano-photonic devices that can be integrated with passive optical components. △ Less

Submitted 24 October, 2008; v1 submitted 16 October, 2008; originally announced October 2008.

Journal ref: New J. Phys. 11, 023034 (2009)

Cavity-resonant excitation for efficient single photon generation

Authors: M. Kaniber, A. Neumann, A. Laucht, M. Bichler, M. -C. Amann, J. J. Finley

Abstract: We present an efficiently pumped single photon source based on single quantum dots (QD) embedded in photonic crystal nanocavities. Resonant excitation of a QD via a higher order cavity mode results in a 100$\times$ reduced optical power at the saturation onset of the photoluminescence, compared with excitation at the same frequency, after the cavity mode is detuned. Furthermore, we demonstrate t… ▽ More We present an efficiently pumped single photon source based on single quantum dots (QD) embedded in photonic crystal nanocavities. Resonant excitation of a QD via a higher order cavity mode results in a 100$\times$ reduced optical power at the saturation onset of the photoluminescence, compared with excitation at the same frequency, after the cavity mode is detuned. Furthermore, we demonstrate that this excitation scheme leads to selective excitation of QDs coupled to the cavity by comparing photoluminescence and auto-correlation spectra for the same excitation wavelength with and without the cavity mode. This provides much cleaner conditions for single photon generation. △ Less

Submitted 17 March, 2008; originally announced March 2008.

Investigation of Non Resonant Dot - Cavity Coupling in Two Dimensional Photonic Crystal Nanocavities

Authors: M. Kaniber, A. Laucht, A. Neumann, J. M. Villas-Boas, M. Bichler, M. -C. Amann, J. J. Finley

Abstract: We study the optical emission from single semiconductor quantum dots coupled to the optical modes of photonic crystal nanocavities. For dots that are both spectrally and spatially coupled, auto-correlation measurements reveal efficient single photon generation, with a drastically reduced lifetime due to the Purcell-effect. However, the multi-photon emission probability is enhanced compared to th… ▽ More We study the optical emission from single semiconductor quantum dots coupled to the optical modes of photonic crystal nanocavities. For dots that are both spectrally and spatially coupled, auto-correlation measurements reveal efficient single photon generation, with a drastically reduced lifetime due to the Purcell-effect. However, the multi-photon emission probability is enhanced compared to the same QD transition when it is detuned from the cavity mode by controlled $N_2$-deposition. This indicates the presence of an emission background that is shown to be related to the dot using photon cross-correlation spectroscopy. Photon temporal correlations persist even for large spectral detunings beyond $Δλ\sim-10 nm$, excluding the intrinsic QD continuum and phonon mediated processes as being responsible for the cavity mode emission background. We propose a mechanism based on photon induced shake up processes in the charged quantum dots, enhanced by the optical cavity. △ Less

Submitted 14 February, 2008; originally announced February 2008.

Highly efficient single photon emission from single quantum dots within a two-dimensional photonic bandgap

Authors: M. Kaniber, A. Laucht, T. Huerlimann, M. Bichler, R. Meyer, M. -C. Amann, J. J. Finley

Abstract: We report highly efficient single photon generation from InGaAs self-assembled quantum dots emitting within a two-dimensional photonic bandgap. A strongly suppressed multiphoton probability is obtained for single quantum dots in bulk GaAs and those emitting into the photonic bandgap. In the latter case, photoluminescence saturation spectroscopy is employed to measure a ~17 times enhancement of t… ▽ More We report highly efficient single photon generation from InGaAs self-assembled quantum dots emitting within a two-dimensional photonic bandgap. A strongly suppressed multiphoton probability is obtained for single quantum dots in bulk GaAs and those emitting into the photonic bandgap. In the latter case, photoluminescence saturation spectroscopy is employed to measure a ~17 times enhancement of the average photon extraction efficiency, when compared to quantum dots in bulk GaAs. For quantum dots in the photonic crystal we measure directly an external quantum efficiency up to 26%, much higher than for quantum dots on the same sample without a tailored photonic environment. The results show that highly efficient quantum dot single photon sources can be realized, without the need for complex nanopositioning techniques. △ Less

Submitted 7 August, 2007; originally announced August 2007.

Efficient Spatial Redistribution of Quantum Dot Spontaneous Emission from 2D Photonic Crystals

Authors: M. Kaniber, A. Kress, M. Bichler, R. Meyer, M. -C. Amann, J. J. Finley

Abstract: We investigate the modification of the spontaneous emission dynamics and external quantum efficiency for self-assembled InGaAs quantum dots coupled to extended and localised photonic states in GaAs 2D-photonic crystals. The 2D-photonic bandgap is shown to give rise to a 5-10 times enhancement of the external quantum efficiency whilst the spontaneous emission rate is simultaneously reduced by a c… ▽ More We investigate the modification of the spontaneous emission dynamics and external quantum efficiency for self-assembled InGaAs quantum dots coupled to extended and localised photonic states in GaAs 2D-photonic crystals. The 2D-photonic bandgap is shown to give rise to a 5-10 times enhancement of the external quantum efficiency whilst the spontaneous emission rate is simultaneously reduced by a comparable factor. Our findings are quantitatively explained by a modal redistribution of spontaneous emission due to the modified local density of photonic states. The results suggest that quantum dots embedded within 2D-photonic crystals are suitable for practical single photon sources with high external efficiency. △ Less

Submitted 5 June, 2007; originally announced June 2007.