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A Survey on Centrality Metrics and Their Implications in Network Resilience
Authors:
Zelin Wan,
Yash Mahajan,
Beom Woo Kang,
Terrence J. Moore,
**-Hee Cho
Abstract:
Centrality metrics have been used in various networks, such as communication, social, biological, geographic, or contact networks. In particular, they have been used in order to study and analyze targeted attack behaviors and investigated their effect on network resilience. Although a rich volume of centrality metrics has been developed for decades, a limited set of centrality metrics have been co…
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Centrality metrics have been used in various networks, such as communication, social, biological, geographic, or contact networks. In particular, they have been used in order to study and analyze targeted attack behaviors and investigated their effect on network resilience. Although a rich volume of centrality metrics has been developed for decades, a limited set of centrality metrics have been commonly in use. This paper aims to introduce various existing centrality metrics and discuss their applicabilities and performance based on the results obtained from extensive simulation experiments to encourage their use in solving various computing and engineering problems in networks.
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Submitted 30 November, 2020;
originally announced November 2020.
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Influence of Al do** on the critical fields and gap values in magnesium diboride single crystals
Authors:
T. Klein,
L. Lyard,
J. Marcus,
C. Marcenat,
P. Szabo,
Z. Hol'anov'a,
P. Samuely,
B. W. Kang,
H-J. Kim,
H-S. Lee,
H-K. Lee,
S-I. Lee
Abstract:
The lower ($H_{c1}$) and upper ($H_{c2}$) critical fields of Mg$_{1-x}$Al$_{x}$B$_2$ single crystals (for $x = 0$, 0.1 and $\gtrsim 0.2$) have been deduced from specific heat and local magnetization measurements, respectively. We show that $H_{c1}$ and $H_{c2}$ are both decreasing with increasing do** content. The corresponding anisotropy parameter $Γ_{H_{c2}}(0) = H^{ab}_{c2}(0)/H^c_{c2}(0)$…
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The lower ($H_{c1}$) and upper ($H_{c2}$) critical fields of Mg$_{1-x}$Al$_{x}$B$_2$ single crystals (for $x = 0$, 0.1 and $\gtrsim 0.2$) have been deduced from specific heat and local magnetization measurements, respectively. We show that $H_{c1}$ and $H_{c2}$ are both decreasing with increasing do** content. The corresponding anisotropy parameter $Γ_{H_{c2}}(0) = H^{ab}_{c2}(0)/H^c_{c2}(0)$ value also decreases from $\sim 5$ in pure MgB$_2$ samples down to $\sim 1.5$ for $x \gtrsim 0.2$ whereas $Γ_{H_{c1}}(0)=H^c_{c1}(0)/H^{ab}_{c1}(0)$ remains on the order of 1 in all samples. The small and large gap values have been obtained by fitting the temperature dependence of the zero field electronic contribution to the specific heat to the two gap model for the three Al concentrations. Very similar values have also been obtained by point contact spectroscopy measurements. The evolution of those gaps with Al concentration suggests that both band filling and interband scattering effects are present.
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Submitted 12 April, 2006;
originally announced April 2006.
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Anisotropies of the lower and upper critical fields in MgB$_2$ single crystals
Authors:
L. Lyard,
P. Szabo,
T. Klein,
J. Marcus,
C. Marcenat,
B. W. Kang,
K. H. Kim,
H. S. Lee,
S. I. Lee
Abstract:
The temperature dependence of the London penetration depth ($λ$) and coherence length ($ξ$) has been deduced from Hall probe magnetization measurements in high quality MgB$_2$ single crystals in the two main crystallographic directions. We show that, in contrast to conventional superconductors, MgB$_2$ is characterized by two different anisotropy parameters ($Γ_λ= λ_c/λ_{ab}$ and…
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The temperature dependence of the London penetration depth ($λ$) and coherence length ($ξ$) has been deduced from Hall probe magnetization measurements in high quality MgB$_2$ single crystals in the two main crystallographic directions. We show that, in contrast to conventional superconductors, MgB$_2$ is characterized by two different anisotropy parameters ($Γ_λ= λ_c/λ_{ab}$ and $Γ_ξ= ξ_{ab}/ξ_c$) which strongly differ at low temperature and merge at $T_c $. These results are in very good agreement with recent calculations in weakly coupled two bands suprerconductors (Phys. Rev. B, 66, 020509(R) (2002).
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Submitted 16 July, 2003;
originally announced July 2003.
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Triple sign reversal of Hall effect in HgBa_{2}CaCu_{2}O_{6} thin films after heavy-ion irradiations
Authors:
W. N. Kang,
B. W. Kang,
Q. Y. Chen,
J. Z. Wu,
Y. Bai,
W. K. Chu,
D. K. Christen,
R. Kerchner,
Sung-Ik Lee
Abstract:
Triple sign reversal in the mixed-state Hall effect has been observed for the first time in ion-irradiated HgBa_{2}CaCu_{2}O_{6} thin films. The negative dip at the third sign reversal is more pronounced for higher fields, which is opposite to the case of the first sign reversal near T_c in most high-T_c superconductors. These observations can be explained by a recent prediction in which the thi…
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Triple sign reversal in the mixed-state Hall effect has been observed for the first time in ion-irradiated HgBa_{2}CaCu_{2}O_{6} thin films. The negative dip at the third sign reversal is more pronounced for higher fields, which is opposite to the case of the first sign reversal near T_c in most high-T_c superconductors. These observations can be explained by a recent prediction in which the third sign reversal is attributed to the energy derivative of the density of states and to a temperature-dependent function related to the superconducting energy gap. These contributions prominently appear in cases where the mean free path is significantly decreased, such as our case of ion-irradiated thin films.
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Submitted 30 March, 1999;
originally announced March 1999.
