Showing 1–7 of 7 results for author: Kaneta-Takada, S

Scattering-dependent transport of SrRuO3 films: From Weyl fermion transport to hump-like Hall effect anomaly

Authors: Shingo Kaneta-Takada, Yuki K. Wakabayashi, Yoshiharu Krockenberger, Hiroshi Irie, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Recent observation of quantum transport phenomena of Weyl fermions has brought much attention to 4d ferromagnetic perovskite SrRuO3 as a magnetic Weyl semimetal. Besides, the hump-like Hall effect anomaly, which might have a topological origin, has also been reported for this material. Here, we show that the emergence of such phenomena is governed by the degree of scattering determined by the defe… ▽ More Recent observation of quantum transport phenomena of Weyl fermions has brought much attention to 4d ferromagnetic perovskite SrRuO3 as a magnetic Weyl semimetal. Besides, the hump-like Hall effect anomaly, which might have a topological origin, has also been reported for this material. Here, we show that the emergence of such phenomena is governed by the degree of scattering determined by the defect density (Ru-deficiency- and/or interface-driven-defect scattering) and measurement temperature (phonon scattering), where the former is controlled by varying the growth conditions of the SrRuO3 films in molecular beam epitaxy as well as the film thickness. The resulting electronic transport properties can be classified into three categories: clean, intermediate, and dirty regimes. The transport of Weyl fermions emerges in the clean regime, whereas that of topologically trivial conduction electrons in the ferromagnetic metal state prevail in the intermediate and dirty regimes. In the clean and intermediate regimes, anomalous Hall resistivity obeys a scaling law incorporating the intrinsic Karplus-Luttinger (Berry phase) and extrinsic side-jump mechanisms. The hump-like Hall effect anomaly is observed only in the dirty regime, which is contrary to the scaling law between anomalous Hall resistivity and longitudinal resistivity. Hence, we conclude that this anomaly is not inherent to the material and does not have a topological origin. We also provide defect- and temperature-dependent transport phase diagrams of stoichiometric SrRuO3 and Ru-deficient SrRu0.7O3 where the appearance of Weyl fermions and hump-like Hall effect anomaly are mapped. These diagrams may serve as a guideline for designing SrRu1-xO3-based spintronic and topological electronic devices. △ Less

Submitted 9 February, 2023; originally announced February 2023.

Theoretical analysis of the inverse Edelstein effect at the LaAlO$_3$ / SrTiO$_3$ interface with an effective tight-binding model: Important role of the second $d_{xy}$ subband

Authors: Shoma Arai, Shingo Kaneta-Takada, Le Duc Anh, Masaaki Tanaka, Shinobu Ohya

Abstract: The two-dimensional electron gas formed at interfaces between SrTiO$_3$ and other materials has attracted much attention since extremely efficient spin-to-charge current conversion has been recently observed at these interfaces. This has been attributed to their complicated quantized multi-orbital structures with a topological feature. However, there are few reports quantitatively comparing the co… ▽ More The two-dimensional electron gas formed at interfaces between SrTiO$_3$ and other materials has attracted much attention since extremely efficient spin-to-charge current conversion has been recently observed at these interfaces. This has been attributed to their complicated quantized multi-orbital structures with a topological feature. However, there are few reports quantitatively comparing the conversion efficiency values between experiments and theoretical calculations at these interfaces. In this study, we theoretically explain the experimental temperature dependence of the spin-to-charge current conversion efficiency using an 8x8 effective tight-binding model considering the second $d_{xy}$ subband, revealing the vital role of the quantization of the multi-band structure. △ Less

Submitted 29 November, 2021; v1 submitted 24 November, 2021; originally announced November 2021.

Comments: 15 pages, 5 fugures

High-mobility two-dimensional carriers from surface Fermi arcs in magnetic Weyl semimetal films

Authors: Shingo Kaneta-Takada, Yuki K. Wakabayashi, Yoshiharu Krockenberger, Toshihiro Nomura, Yoshimitsu Kohama, Sergey A. Nikolaev, Hena Das, Hiroshi Irie, Kosuke Takiguchi, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: High-mobility two-dimensional carriers originating from surface Fermi arcs in magnetic Weyl semimetals are highly desired for accessing exotic quantum transport phenomena and for topological electronics applications. Here, we demonstrate high-mobility two-dimensional carriers that show quantum oscillations in magnetic Weyl semimetal SrRuO3 epitaxial films by systematic angle-dependent, high-magnet… ▽ More High-mobility two-dimensional carriers originating from surface Fermi arcs in magnetic Weyl semimetals are highly desired for accessing exotic quantum transport phenomena and for topological electronics applications. Here, we demonstrate high-mobility two-dimensional carriers that show quantum oscillations in magnetic Weyl semimetal SrRuO3 epitaxial films by systematic angle-dependent, high-magnetic field magnetotransport experiments. The exceptionally high-quality SrRuO3 films were grown by state-of-the-art oxide thin film growth technologies driven by machine learning algorithm. The quantum oscillations for the 10-nm SrRuO3 film show a high quantum mobility of 3500 cm2/Vs, a light cyclotron mass, and two-dimensional angular dependence, which can be attributed to the surface Fermi arcs. The linear thickness dependence of the phase shift of the quantum oscillations provides evidence for the non-trivial nature of the quantum oscillations mediated by the surface Fermi arcs. In addition, at low temperatures and under magnetic fields of up to 52 T, the quantum limit of SrRuO3 manifests the chiral anomaly of the Weyl nodes. Emergence of the hitherto hidden two-dimensional Weyl states in a ferromagnetic oxide pave the way to explore novel quantum transport phenomena for topological oxide electronics. △ Less

Submitted 22 December, 2021; v1 submitted 6 June, 2021; originally announced June 2021.

Wide-range epitaxial strain control of electrical and magnetic properties in high-quality SrRuO3 films

Authors: Yuki K. Wakabayashi, Shingo Kaneta-Takada, Yoshiharu Krockenberger, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Epitaxial strain in 4d ferromagnet SrRuO3 films is directly linked to the physical properties through the strong coupling between lattices, electrons, and spins. It provides an excellent opportunity to tune the functionalities of SrRuO3 in electronic and spintronic devices. However, a thorough understanding of the epitaxial strain effect in SrRuO3 has remained elusive due to the lack of systematic… ▽ More Epitaxial strain in 4d ferromagnet SrRuO3 films is directly linked to the physical properties through the strong coupling between lattices, electrons, and spins. It provides an excellent opportunity to tune the functionalities of SrRuO3 in electronic and spintronic devices. However, a thorough understanding of the epitaxial strain effect in SrRuO3 has remained elusive due to the lack of systematic studies. This study demonstrates wide-range epitaxial strain control of electrical and magnetic properties in high-quality SrRuO3 films. The epitaxial strain was imposed by cubic or pseudocubic perovskite substrates having a lattice mismatch of -1.6 to 2.3% with reference to bulk SrRuO3. The Poisson ratio, which describes the two orthogonal distortions due to the substrate clam** effect, is estimated to be 0.33. The Curie temperature (TC) and residual resistivity ratios of the series of films are higher than or comparable to the highest reported values for SrRuO3 on each substrate, confirming the high crystalline quality of the films. A TC of 169 K is achieved in a tensile-strained SrRuO3 film on the DyScO3 (110) substrate, which is the highest value ever reported for SrRuO3. The TC (146-169 K), magnetic anisotropy (perpendicular or in-plane magnetic easy axis), and metallic conduction (residual resistivity at 2 K of 2.10 - 373 μΩcm) of SrRuO3 are widely controlled by epitaxial strain. These results provide guidelines to design SrRuO3-based heterostructures for device applications. △ Less

Submitted 28 January, 2021; originally announced January 2021.

Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3

Authors: Yuki K. Wakabayashi, Shingo Kaneta-Takada, Yoshiharu Krockenberger, Kosuke Takiguchi, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: We investigate structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy on (001) SrTiO3 substrates. To distinguish the influence of the two types of disorders in the films, Ru vacancies within lattices and disorders near the interface, SrRu0.7O3 thin films with various thicknesses (t = 1-60 nm) were prepared. It was found that the influence… ▽ More We investigate structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy on (001) SrTiO3 substrates. To distinguish the influence of the two types of disorders in the films, Ru vacancies within lattices and disorders near the interface, SrRu0.7O3 thin films with various thicknesses (t = 1-60 nm) were prepared. It was found that the influence of the former dominates the electrical and magnetic properties when t > 5-10 nm, while that of the latter does when t < 5-10 nm. Structural characterizations revealed that the crystallinity, in terms of the Sr and O sublattices, of SrRu0.7O3 thin films, is as high as that of the ultrahigh-quality SrRuO3 ones. The Curie temperature (TC) analysis elucidated that SrRu0.7O3 (TC = 140 K) is a material distinct from SrRuO3 (TC = 150 K). Despite the large Ru deficiency (30%), the SrRu0.7O3 films showed metallic conduction when t > 5 nm. In high-field magnetoresistance measurements, the fascinating phenomenon of Weyl fermion transport was not observed for the SrRu0.7O3 thin films irrespective of thickness, which is in contrast to the stoichiometric SrRuO3 films. The (magneto)transport properties suggest that a picture of carrier scattering due to the Ru vacancies is appropriate for SrRu0.7O3, and also that proper stoichiometry control is a prerequisite to utilizing the full potential of SrRuO3 as a magnetic Weyl semimetal and two-dimensional spin-polarized system. Nevertheless, the large tolerance in Ru composition (30 %) to metallic conduction is advantageous for some practical applications where SrRu1-xO3 is exploited as an epitaxial conducting layer. △ Less

Submitted 13 January, 2021; originally announced January 2021.

Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films

Authors: Shingo Kaneta-Takada, Yuki K. Wakabayashi, Yoshiharu Krockenberger, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: The recent observation of Weyl fermions in the itinerant 4d ferromagnetic perovskite SrRuO3 points to this material being a good platform for exploring novel physics related to a pair of Weyl nodes in epitaxial heterostructures. In this letter, we report the thickness-dependent magnetotransport properties of ultra-high-quality epitaxial SrRuO3 films grown under optimized conditions on SrTiO3 subst… ▽ More The recent observation of Weyl fermions in the itinerant 4d ferromagnetic perovskite SrRuO3 points to this material being a good platform for exploring novel physics related to a pair of Weyl nodes in epitaxial heterostructures. In this letter, we report the thickness-dependent magnetotransport properties of ultra-high-quality epitaxial SrRuO3 films grown under optimized conditions on SrTiO3 substrates. Signatures of Weyl fermion transport, i.e., unsaturated linear positive magnetoresistance accompanied by a quantum oscillation having a π Berry phase, were observed in films with thicknesses as small as 10 nm. Residual resistivity increased with decreasing film thickness, indicating disorder near the interface between SrRuO3 and the SrTiO3 substrate. Since this disorder affects the magnetic and electrical properties of the films, the Curie temperature decreases and the coercive field increases with decreasing thickness. Thickness-dependent magnetotransport measurements revealed that the threshold residual resistivity ratio (RRR) to observe Weyl fermion transport is 21. These results provide guidelines for realizing quantum transport of Weyl fermions in SrRuO3 near heterointerfaces. △ Less

Submitted 6 November, 2020; originally announced November 2020.

Alternation of Magnetic Anisotropy Accompanied by Metal-Insulator Transition in Strained Ultrathin Manganite Heterostructures

Authors: Masaki Kobayashi, Le Duc Anh, Masahiro Suzuki, Shingo Kaneta-Takada, Yukiharu Takeda, Shin-ichi Fujimori, Masaaki Tanaka, Shinobu Ohya, Atsushi Fujimori

Abstract: Fundamental understanding of interfacial magnetic properties in ferromagnetic heterostructures is essential to utilize ferromagnetic materials for spintronic device applications. In this paper, we investigate the interfacial magnetic and electronic structures of epitaxial single-crystalline LaAlO$_3$ (LAO)/La$_{0.6}$Sr$_{0.4}$MnO$_3$ (LSMO)/Nb:SrTiO$_3$ (Nb:STO) heterostructures with varying LSMO-… ▽ More Fundamental understanding of interfacial magnetic properties in ferromagnetic heterostructures is essential to utilize ferromagnetic materials for spintronic device applications. In this paper, we investigate the interfacial magnetic and electronic structures of epitaxial single-crystalline LaAlO$_3$ (LAO)/La$_{0.6}$Sr$_{0.4}$MnO$_3$ (LSMO)/Nb:SrTiO$_3$ (Nb:STO) heterostructures with varying LSMO-layer thickness, in which the magnetic anisotropy strongly changes depending on the LSMO thickness due to the delicate balance between the strains originating from both the Nb:STO and LAO layers, using x-ray magnetic circular dichroism (XMCD) and photoemission spectroscopy (PES). We successfully detect the clear change of the magnetic behavior of the Mn ions concomitant with the thickness-dependent metal-insulator transition (MIT). Our results suggest that double-exchange interaction induces the ferromagnetism in the metallic LSMO film under tensile strain caused by the SrTiO$_3$ substrate, while superexchange interaction determines the magnetic behavior in the insulating LSMO film under compressive strain originating from the top LAO layer. Based on those findings, the formation of a magnetic dead layer near the LAO/LSMO interface is attributed to competition between the superexchange interaction via Mn 3$d_{3z^2-r^2}$ orbitals under compressive strain and the double-exchange interaction via the 3$d_{x^2-y^2}$ orbitals. △ Less

Submitted 19 November, 2020; v1 submitted 25 September, 2020; originally announced September 2020.

Comments: 20 pages, 6 figures

Journal ref: Phys. Rev. Applied 15, 064019 (2021)