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Revealing the conduction band and pseudovector potential in 2D moiré semiconductors
Authors:
Abigail J. Graham,
Heonjoon Park,
Paul V. Nguyen,
James Nunn,
Viktor Kandyba,
Mattia Cattelan,
Alessio Giampietri,
Alexei Barinov,
Kenji Watanabe,
Takashi Taniguchi,
Anton Andreev,
Mark Rudner,
Xiaodong Xu,
Neil R. Wilson,
David H. Cobden
Abstract:
Stacking monolayer semiconductors results in moiré patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate the properties of the conduction band in moiré heterobilayers using submicron angle-resolved photoemission spectroscopy with electrostatic gating, focusing on the…
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Stacking monolayer semiconductors results in moiré patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate the properties of the conduction band in moiré heterobilayers using submicron angle-resolved photoemission spectroscopy with electrostatic gating, focusing on the example of WS2/WSe2. We find that at all twist angles the conduction band edge is the K-point valley of the WS2, with a band gap of 1.58 +- 0.03 eV. By resolving the conduction band dispersion, we observe an unexpectedly small effective mass of 0.15 +- 0.02 m_e. In addition, we observe replicas of the conduction band displaced by reciprocal lattice vectors of the moiré superlattice. We present arguments and evidence that the replicas are due to modification of the conduction band states by the moiré potential rather than to final-state diffraction. Interestingly, the replicas display an intensity pattern with reduced, 3-fold symmetry, which we show implicates the pseudo vector potential associated with in-plane strain in moiré band formation.
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Submitted 19 September, 2023;
originally announced September 2023.
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Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier do**
Authors:
Ekaterina Khestanova,
Tatyana Ivanova,
Roland Gillen,
Alessandro D Elia,
Oliver Nicholas Gallego Lacey,
Lena Wysocki,
Alexander Gruneis,
Vasily Kravtsov,
Wlodek Strupinski,
Janina Maultzsch,
Viktor Kandyba,
Mattia Cattelan,
Alexei Barinov,
Jose Avila,
Pavel Dudin,
Boris V. Senkovskiy
Abstract:
Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron do** of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the…
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Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron do** of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the optical and electronic properties of a MoS2/WSe2 heterostructure as a function of chemical do** by Cs atoms performed under ultra-high vacuum conditions. By PL measurements we identify two interlayer excitons and assign them to the momentum-indirect Q-Gamma and K-Gamma transitions. The energies of these excitons are in a very good agreement with ab initio calculations. We find that the Q-Gamma interlayer exciton is robust to the electron do** and is present at room temperature even at a high charge carrier concentration. Submicrometer angle-resolved photoemission spectroscopy (micro-ARPES) reveals charge transfer from deposited Cs adatoms to both the upper MoS2 and the lower WSe2 monolayer without changing the band alignment. This leads to a small (10 meV) energy shift of interlayer excitons. Robustness of the momentum-indirect interlayer exciton to charge do** opens up an opportunity of using TMD heterostructures in light-emitting devices that can work at room temperature at high densities of charge carriers.
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Submitted 5 April, 2023;
originally announced April 2023.
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A robust weak topological insulator in a bismuth halide Bi4Br2I2
Authors:
Ryo Noguchi,
Masaru Kobayashi,
Kaishu Kawaguchi,
Chun Lin,
Hiroaki Tanaka,
Kenta Kuroda,
Ayumi Harasawa,
Viktor Kandyba,
Mattia Cattelan,
Alexei Barinov,
Makoto Hashimoto,
Donghui Lu,
Takao Sasagawa,
Takeshi Kondo
Abstract:
We apply a topological material design concept for selecting a bulk topology of 3D crystals by different van-der-Waals stacking of 2D topological insulator layers, and find a bismuth halide Bi4Br2I2 to be an ideal weak topological insulator (WTI) with the largest band gap (~230 meV) among all the WTI candidates, by means of angle-resolved photoemission spectroscopy (ARPES), density functional theo…
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We apply a topological material design concept for selecting a bulk topology of 3D crystals by different van-der-Waals stacking of 2D topological insulator layers, and find a bismuth halide Bi4Br2I2 to be an ideal weak topological insulator (WTI) with the largest band gap (~230 meV) among all the WTI candidates, by means of angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT) calculations, and resistivity measurements. Our results vastly expand future opportunities for fundamental research and device applications with a robust WTI.
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Submitted 17 January, 2023;
originally announced January 2023.
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Observation of Γ-valley moiré bands and emergent hexagonal lattice in twisted transition metal dichalcogenides
Authors:
Ding Pei,
Binbin Wang,
Zishu Zhou,
Zhihai He,
Liheng An,
Shanmei He,
Cheng Chen,
Yiwei Li,
Liyang Wei,
Aiji Liang,
Jose Avila,
Pavel Dudin,
Viktor Kandyba,
Alessio Giampietri,
Mattia Cattelan,
Alexei Barinov,
Zhongkai Liu,
Jianpeng Liu,
Hongming Weng,
Ning Wang,
Jiamin Xue,
Yulin Chen
Abstract:
Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moiré bands with specific charge distributions in moiré superlattices. Here, combining angle-resolved photoemission spectroscopy with sub-micron spatial resolution (μ-ARPES) and scanning tunneling microscopy (STM), we performed a systemat…
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Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moiré bands with specific charge distributions in moiré superlattices. Here, combining angle-resolved photoemission spectroscopy with sub-micron spatial resolution (μ-ARPES) and scanning tunneling microscopy (STM), we performed a systematic investigation on the electronic structure of 5.1° twisted bilayer WSe2 that hosts correlated insulating and zero-resistance states. Interestingly, contrary to one's expectation, moiré bands were observed only at Γ-valley but not K-valley in μ-ARPES measurements; and correspondingly, our STM measurements clearly identified the real-space honeycomb- and Kagome-shaped charge distributions at the moiré length scale associated with the Γ-valley moiré bands. These results not only reveal the unsual valley dependent moiré-modified electronic structure in twisted transition metal dichalcogenides, but also highlight the Γ-valley moiré bands as a promising platform for exploring strongly correlated physics in emergent honeycomb and Kagome lattices at different energy scales.
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Submitted 27 May, 2022;
originally announced May 2022.
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Large anomalous Hall effect induced by weak ferromagnetism in the noncentrosymmetric antiferromagnet $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$
Authors:
Hiroaki Tanaka,
Shota Okazaki,
Kenta Kuroda,
Ryo Noguchi,
Yosuke Arai,
Susumu Minami,
Shinichiro Ideta,
Kiyohisa Tanaka,
Donghui Lu,
Makoto Hashimoto,
Viktor Kandyba,
Mattia Cattelan,
Alexei Barinov,
Takayuki Muro,
Takao Sasagawa,
Takeshi Kondo
Abstract:
We study the mechanism of the exceptionally large anomalous Hall effect (AHE) in the noncentrosymmetric antiferromagnet $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ by angle-resolved photoemission spectroscopy (ARPES) and magnetotransport measurements. From ARPES measurements of $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ and its family compounds ($\mathrm{Fe}\mathrm{Nb}_3\mathrm{S}_6$ and…
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We study the mechanism of the exceptionally large anomalous Hall effect (AHE) in the noncentrosymmetric antiferromagnet $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ by angle-resolved photoemission spectroscopy (ARPES) and magnetotransport measurements. From ARPES measurements of $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ and its family compounds ($\mathrm{Fe}\mathrm{Nb}_3\mathrm{S}_6$ and $\mathrm{Ni}\mathrm{Nb}_3\mathrm{S}_6$), we find a band dispersion unique to the Co intercalation existing near the Fermi level. We further demonstrate that a slight deficiency of sulfur in $\mathrm{Co}\mathrm{Nb}_3\mathrm{S}_6$ eliminates the ferromagnetism and the AHE simultaneously while hardly changing the band structure, indicating that the weak ferromagnetism is responsible for the emergence of the large AHE. Based on our results, we propose Weyl points near the Fermi level to cause the large AHE.
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Submitted 18 February, 2022;
originally announced February 2022.
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Domain dependent Fermi arcs observed in a striped phase dichalcogenide
Authors:
T. Mizokawa,
A. Barinov,
V. Kandyba,
A. Giampietri,
R. Matsumoto,
Y. Okamoto,
K. Takubo,
K. Miyamoto,
T. Okuda,
S. Pyon,
H. Ishii,
K. Kudo,
M. Nohara,
N. L. Saini
Abstract:
Angle-resolved photoemission spectromicroscopy on IrTe2 reveals evolution of mesoscopic striped domains across its first order phase transition at about 280 K. The striped texture of the domains is characterized by a herringbone arrangement of the electronic anisotropy axes. Under further cooling down to 47 K, the striped domains evolve into trijunction domains with the electronic anisotropy in th…
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Angle-resolved photoemission spectromicroscopy on IrTe2 reveals evolution of mesoscopic striped domains across its first order phase transition at about 280 K. The striped texture of the domains is characterized by a herringbone arrangement of the electronic anisotropy axes. Under further cooling down to 47 K, the striped domains evolve into trijunction domains with the electronic anisotropy in three directions. Each domain harbors quasi one-dimensional surface bands forming Fermi arcs with peculiar spin polarization. The Fermi arc corresponds to an edge state of the two-dimensional bulk electronic states truncated at the surface, indicating an interesting interplay between the symmetry breaking and the surface electronic states.
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Submitted 11 December, 2021;
originally announced December 2021.
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Observation and control of the weak topological insulator state in ZrTe5
Authors:
Peng Zhang,
Ryo Noguchi,
Kenta Kuroda,
Chun Lin,
Kaishu Kawaguchi,
Koichiro Yaji,
Ayumi Harasawa,
Mikk Lippmaa,
Simin Nie,
Hongming Weng,
V. Kandyba,
A. Giampietri,
A. Barinov,
Qiang Li,
G. D. Gu,
Shik Shin,
Takeshi Kondo
Abstract:
A quantum spin Hall insulator hosts topological states at the one-dimensional edge, along which backscattering by nonmagnetic impurities is strictly prohibited and dissipationless current flows. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces of crystals. The enhanced confinement could provide a route for dissipationless…
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A quantum spin Hall insulator hosts topological states at the one-dimensional edge, along which backscattering by nonmagnetic impurities is strictly prohibited and dissipationless current flows. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces of crystals. The enhanced confinement could provide a route for dissipationless current and better advantages for applications relative to the widely studied strong topological insulators. However, the topological side surface is usually not cleavable and is thus hard to observe by angle-resolved photoemission spectroscopy (ARPES), which has hindered the revealing of the electronic properties of WTIs. Here, we visualize the topological surface states of the WTI candidate ZrTe5 for the first time by spin and angle-resolved photoemission spectroscopy: a quasi-1D band with spin-momentum locking was revealed on the side surface. We further demonstrate that the bulk band gap in ZrTe5 is controlled by strain to the crystal, realizing a more stabilized WTI state or an ideal Dirac semimetal state depending on the direction of the external strain. The highly directional spin-current and the tunable band gap we found in ZrTe5 will provide an excellent platform for applications.
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Submitted 9 December, 2020;
originally announced December 2020.
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Moiré superlattice effects and band structure evolution in near-30-degree twisted bilayer graphene
Authors:
Matthew J. Hamer,
Alessio Giampietri,
Viktor Kandyba,
Francesca Genuzio,
Tevfik O. Mentes,
Andrea Locatelli,
Roman V. Gorbachev,
Alexei Barinov,
Marcin Mucha-Kruczynski
Abstract:
In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Bri…
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In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Brillouin zone, including the vicinity of the saddle point at $M$ and across 3 eV from the Dirac points. In this energy range, we resolve several moiré minibands and detect signatures of secondary Dirac points in the reconstructed dispersions. For twists $θ>21.8^{\circ}$, the low-energy minigaps are not due to cone anti-crossing as is the case at smaller twist angles but rather due to moiré scattering of electrons in one graphene layer on the potential of the other which generates intervalley coupling. Our work demonstrates robustness of mechanisms which enable engineering of electronic dispersions of stacks of two-dimensional crystals by tuning the interface twist angles. It also shows that large-angle tBLG hosts electronic minigaps and van Hove singularities of different origin which, given recent progress in extreme do** of graphene, could be explored experimentally.
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Submitted 27 January, 2022; v1 submitted 19 October, 2020;
originally announced October 2020.
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Atomic and electronic structure of two-dimensional Mo(1-x)WxS2 alloys
Authors:
Xue Xia,
Siow Mean Loh,
Jacob Viner,
Natalie C. Teutsch,
Abigail J. Graham,
Viktor Kandyba,
Alexei Barinov,
Ana M. Sanchez,
David C. Smith,
Nicholas D. M. Hine,
Neil R. Wilson
Abstract:
Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconducting transition metal dichalcogenides of the MoWSeS group (MX2 where M= Mo or W and X=S or Se) can be grown as high-quality materials with low defect concentrations. Here we investigate the atomic and electronic structure…
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Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconducting transition metal dichalcogenides of the MoWSeS group (MX2 where M= Mo or W and X=S or Se) can be grown as high-quality materials with low defect concentrations. Here we investigate the atomic and electronic structure of Mo(1-x)WxS2 alloys using a combination of high-resolution experimental techniques and simulations. Analysis of the Mo and W atomic positions in these alloys, grown by chemical vapour transport, shows that they are randomly distributed, consistent with Monte Carlo simulations that use interaction energies determined from first-principles calculations. Electronic structure parameters are directly determined from angle resolved photoemission spectroscopy measurements. These show that the spin-orbit splitting at the valence band edge increases linearly with W content from MoS2 to WS2, in agreement with linear-scaling density functional theory (LS-DFT) predictions. The spin-orbit splitting at the conduction band edge is predicted to reduce to zero at intermediate compositions. Despite this, polarisation-resolved photoluminescence spectra on monolayer Mo0.5W0.5S2 show significant circular dichroism, indicating that spin-valley locking is retained. These results demonstrate that alloying is an important tool for controlling the electronic structure of MX2 for spintronic and valleytronic applications.
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Submitted 10 September, 2020;
originally announced September 2020.
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Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures
Authors:
Abigail J. Graham,
Johanna Zultak,
Matthew J. Hamer,
Viktor Zolyomi,
Samuel Magorrian,
Alexei Barinov,
Viktor Kandyba,
Alessio Giampietri,
Andrea Locatelli,
Francesca Genuzio,
Natalie C. Teutsch,
Temok Salazar,
Nicholas D. M. Hine,
Vladimir I. Fal'ko,
Roman V. Gorbachev,
Neil R. Wilson
Abstract:
In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattic…
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In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattice in the neighbouring layer. Using angle-resolved photoemission spectroscopy to study a graphene on InSe heterostructure, we present evidence that interlayer umklapp processes can cause hybridization between bands from neighbouring layers in regions of the Brillouin zone where bands from only one layer are expected, despite no evidence for moir/'e-induced replica bands. This phenomenon manifests itself as 'ghost' anti-crossings in the InSe electronic dispersion. Applied to a range of suitable 2DM pairs, this phenomenon of interlayer umklapp hybridization can be used to create strong mixing of their electronic states, giving a new tool for twist-controlled band structure engineering.
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Submitted 8 January, 2021; v1 submitted 27 August, 2020;
originally announced August 2020.
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Direct evidence for flat bands in twisted bilayer graphene from nano-ARPES
Authors:
Simone Lisi,
Xiaobo Lu,
Tjerk Benschop,
Tobias A. de Jong,
Petr Stepanov,
Jose R. Duran,
Florian Margot,
Irène Cucchi,
Edoardo Cappelli,
Andrew Hunter,
Anna Tamai,
Viktor Kandyba,
Alessio Giampietri,
Alexei Barinov,
Johannes Jobst,
Vincent Stalman,
Maarten Leeuwenhoek,
Kenji Watanabe,
Takashi Taniguchi,
Louk Rademaker,
Sense Jan van der Molen,
Milan Allan,
Dmitri K. Efetov,
Felix Baumberger
Abstract:
Transport experiments in twisted bilayer graphene revealed multiple superconducting domes separated by correlated insulating states. These properties are generally associated with strongly correlated states in a flat mini-band of the hexagonal moiré superlattice as it was predicted by band structure calculations. Evidence for such a flat band comes from local tunneling spectroscopy and electronic…
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Transport experiments in twisted bilayer graphene revealed multiple superconducting domes separated by correlated insulating states. These properties are generally associated with strongly correlated states in a flat mini-band of the hexagonal moiré superlattice as it was predicted by band structure calculations. Evidence for such a flat band comes from local tunneling spectroscopy and electronic compressibility measurements, reporting two or more sharp peaks in the density of states that may be associated with closely spaced van Hove singularities. Direct momentum resolved measurements proved difficult though. Here, we combine different imaging techniques and angle resolved photoemission with simultaneous real and momentum space resolution (nano-ARPES) to directly map the band dispersion in twisted bilayer graphene devices near charge neutrality. Our experiments reveal large areas with homogeneous twist angle that support a flat band with spectral weight that is highly localized in momentum space. The flat band is separated from the dispersive Dirac bands which show multiple moiré hybridization gaps. These data establish the salient features of the twisted bilayer graphene band structure.
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Submitted 6 February, 2020;
originally announced February 2020.
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Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator
Authors:
Ryo Noguchi,
Masaru Kobayashi,
Zhanzhi Jiang,
Kenta Kuroda,
Takanari Takahashi,
Zifan Xu,
Daehun Lee,
Motoaki Hirayama,
Masayuki Ochi,
Tetsuroh Shirasawa,
Peng Zhang,
Chun Lin,
Cédric Bareille,
Shunsuke Sakuragi,
Hiroaki Tanaka,
So Kunisada,
Kifu Kurokawa,
Koichiro Yaji,
Ayumi Harasawa,
Viktor Kandyba,
Alessio Giampietri,
Alexei Barinov,
Timur K. Kim,
Cephise Cacho,
Makoto Hashimoto
, et al. (6 additional authors not shown)
Abstract:
The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingl…
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The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications.
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Submitted 10 February, 2021; v1 submitted 4 February, 2020;
originally announced February 2020.
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Visualizing electrostatic gating effects in two-dimensional heterostructures
Authors:
Paul V. Nguyen,
Natalie C. Teutsch,
Nathan P. Wilson,
Joshua Kahn,
Xue Xia,
Viktor Kandyba,
Alexei Barinov,
Gabriel Constantinescu,
Nicholas D. M. Hine,
Xiaodong Xu,
David H. Cobden,
Neil R. Wilson
Abstract:
The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body sp…
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The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body spectral reconstructions. Here we show that submicron angle-resolved photoemission (micro-ARPES) applied to two-dimensional (2D) van der Waals heterostructures affords this ability. In graphene devices, we observe a shift of the chemical potential by 0.6 eV across the Dirac point as a gate voltage is applied. In several 2D semiconductors we see the conduction band edge appear as electrons accumulate, establishing its energy and momentum, and observe significant band-gap renormalization at low densities. We also show that micro-ARPES and optical spectroscopy can be applied to a single device, allowing rigorous study of the relationship between gate-controlled electronic and excitonic properties.
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Submitted 15 April, 2019;
originally announced April 2019.
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Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES
Authors:
Matthew Hamer,
Johanna Zultak,
Anastasia V. Tyurnina,
Viktor Zólyomi,
Daniel Terry,
Alexei Barinov,
Alistair Garner,
Jack Donoghue,
Aidan P. Rooney,
Viktor Kandyba,
Alessio Giampietri,
Abigail J. Graham,
Natalie C. Teutsch,
Xue Xia,
Maciej Koperski,
Sarah J. Haigh,
Vladimir I. Fal'ko,
Roman Gorbachev,
Neil R. Wilson
Abstract:
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilaye…
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Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the crystal [1-4] and, specifically for InSe, an earlier predicted crossover from a direct gap in the bulk [5,6] to a weakly indirect band gap in monolayers and bilayers [7-11]. Here, we apply angle resolved photoemission spectroscopy with submicrometer spatial resolution ($μ$ARPES) to visualise the layer-dependent valence band structure of mechanically exfoliated crystals of InSe. We show that for 1 layer and 2 layer InSe the valence band maxima are away from the $\mathbfΓ$-point, forming an indirect gap, with the conduction band edge known to be at the $\mathbfΓ$-point. In contrast, for six or more layers the bandgap becomes direct, in good agreement with theoretical predictions. The high-quality monolayer and bilayer samples enables us to resolve, in the photoluminescence spectra, the band-edge exciton (A) from the exciton (B) involving holes in a pair of deeper valence bands, degenerate at $\mathbfΓ$, with the splitting that agrees with both $μ$ARPES data and the results of DFT modelling. Due to the difference in symmetry between these two valence bands, light emitted by the A-exciton should be predominantly polarised perpendicular to the plane of the two-dimensional crystal, which we have verified for few-layer InSe crystals.
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Submitted 21 January, 2019;
originally announced January 2019.
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Band parameters and hybridization in 2D semiconductor heterostructures from photoemission spectroscopy
Authors:
Neil R. Wilson,
Paul V. Nguyen,
Kyle L. Seyler,
Pasqual Rivera,
Alexander J. Marsden,
Zachary P. L. Laker,
Gabriel C. Constantinescu,
Viktor Kandyba,
Alexei Barinov,
Nicholas D. M. Hine,
Xiaodong Xu,
David H. Cobden
Abstract:
Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band parameters and orbital hybridization in separate and stacked monolayers, many of which are only available as small samples. The recently introduced technique of an…
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Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band parameters and orbital hybridization in separate and stacked monolayers, many of which are only available as small samples. The recently introduced technique of angle-resolved photoemission spectroscopy with submicron spatial resolution (μ-ARPES) offers the capability to measure small samples, but the energy resolution obtained for such exfoliated samples to date (~0.5 eV) has been inadequate. Here, we show that by suitable heterostructure sample design the full potential of μ-ARPES can be realized. We focus on MoSe2/WSe2 van der Waals heterostructures, which are 2D analogs of 3D semiconductor heterostructures. We find that in a MoSe2/WSe2 heterobilayer the bands in the K valleys are weakly hybridized, with the conduction and valence band edges originating in the MoSe2 and WSe2 respectively. There is stronger hybridization at the Γ point, but the valence band edge remains at the K points. This is consistent with the recent observation of interlayer excitons where the electron and hole are valley polarized but in opposite layers. We determine the valence band offset to be 300 meV, which combined with photoluminescence measurements implies that the binding energy of interlayer excitons is at least 200 meV, comparable with that of intralayer excitons.
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Submitted 21 January, 2016;
originally announced January 2016.
