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Single-photon induced instabilities in a cavity electromechanical device
Authors:
Tanmoy Bera,
Mridul Kandpal,
G. S. Agarwal,
Vibhor Singh
Abstract:
Cavity-electromechanical systems are extensively used for sensing and controlling the vibrations of mechanical resonators down to their quantum limit. The nonlinear radiation-pressure interaction in these systems could result in an unstable response of the mechanical resonator showing features such as frequency-combs, period-doubling bifurcations and chaos. However, due to weak light-matter intera…
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Cavity-electromechanical systems are extensively used for sensing and controlling the vibrations of mechanical resonators down to their quantum limit. The nonlinear radiation-pressure interaction in these systems could result in an unstable response of the mechanical resonator showing features such as frequency-combs, period-doubling bifurcations and chaos. However, due to weak light-matter interaction, typically these effects appear at very high driving strengths. By using polariton modes formed by a strongly coupled flux-tunable transmon and a microwave cavity, here we demonstrate an electromechanical device and achieve a single-photon coupling rate $g_0/2π$ of $160~$kHz, which is nearly 4\% of the mechanical frequency $ω_m$. Due to large $g_0/ω_m$ ratio, the device shows an unstable mechanical response resulting in frequency combs in sub-single photon limit. We systematically investigate the boundary of the unstable response and identify two important regimes governed by the optomechanical backaction and the nonlinearity of the electromagnetic mode. Such an improvement in the single-photon coupling rate and the observations of microwave frequency combs at single-photon levels may have applications in the quantum control of the motional states and critical parametric sensing. Our experiments strongly suggest the requirement of newer approaches to understand instabilities.
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Submitted 2 May, 2024; v1 submitted 13 September, 2023;
originally announced September 2023.
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Linking electronic transport through a spin crossover thin film to the molecular spin state using X-ray absorption spectroscopy operando techniques
Authors:
Filip Schleicher,
Michał Studniarek,
Kuppusamy Senthil Kumar,
Etienne Urbain,
Kostantine Katcko,
**jie Chen,
Timo Frauhammer,
Marie Hervé,
Ufuk Halisdemir,
Lalit Mohan Kandpal,
Daniel Lacour,
Alberto Riminucci,
Loic Joly,
Fabrice Scheurer,
Benoit Gobaut,
Fadi Choueikani,
Edwige Otero,
Philippe Ohresser,
Jacek Arabski,
Guy Schmerber,
Wulf Wulfhekel,
Eric Beaurepaire,
Wolfgang Weber,
Samy Boukari,
Mario Ruben
, et al. (1 additional authors not shown)
Abstract:
One promising route toward encoding information is to utilize the two stable electronic states of a spin crossover molecule. However, while this property is clearly manifested in transport across single molecule junctions, evidence linking charge transport across a solid-state device to the molecular film's spin state has thus far remained indirect. To establish this link, we deploy materials-cent…
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One promising route toward encoding information is to utilize the two stable electronic states of a spin crossover molecule. However, while this property is clearly manifested in transport across single molecule junctions, evidence linking charge transport across a solid-state device to the molecular film's spin state has thus far remained indirect. To establish this link, we deploy materials-centric and device-centric operando experiments involving X-ray absorption spectroscopy. We find a correlation between the temperature dependencies of the junction resistance and the Fe spin state within the device's Fe(bpz)2(phen) molecular film. We also factually observe that the Fe molecular site mediates charge transport. Our dual operando studies reveal that transport involves a subset of molecules within an electronically heterogeneous spin crossover film. Our work confers an insight that substantially improves the state-of-the-art regarding spin crossover-based devices, thanks to a methodology that can benefit device studies of other next-generation molecular compounds.
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Submitted 3 February, 2018; v1 submitted 30 January, 2018;
originally announced January 2018.
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Hole transport across MgO-based magnetic tunnel junctions with high resistance-area product due to oxygen vacancies
Authors:
F. Schleicher,
B. Taudul,
U. Halisdemir,
K. Katcko,
E. Monteblanco,
D. Lacour,
S. Boukari,
F. Montaigne,
E. Urbain,
L. M. Kandpal,
J. Arabski,
W. Weber,
E. Beaurepaire,
M. Hehn,
M. Alouani,
M. Bowen
Abstract:
The quantum mechanical tunnelling process conserves the quantum properties of the particle considered. As applied to solid-state tunnelling (SST), this physical law was verified, within the field of spintronics, regarding the electron spin in early experiments across Ge tunnel barriers, and in the 90s across Al2O3 barriers. The conservation of the quantum parameter of orbital occupancy, as grouped…
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The quantum mechanical tunnelling process conserves the quantum properties of the particle considered. As applied to solid-state tunnelling (SST), this physical law was verified, within the field of spintronics, regarding the electron spin in early experiments across Ge tunnel barriers, and in the 90s across Al2O3 barriers. The conservation of the quantum parameter of orbital occupancy, as grouped into electronic symmetries, was observed in the '00s across MgO barriers, followed by SrTiO3 (STO). Barrier defects, such as oxygen vacancies, partly conserve this electronic symmetry. In the solid-state, an additional subtlety is the sign of the charge carrier: are holes or electrons involved in transport? We demonstrate that SST across MgO magnetic tunnel junctions (MTJs) with a large resistance-area (RA) product involves holes by examining how shifting the MTJ's Fermi level alters the ensuing barrier heights defined by the barrier's oxygen vacancies. In the process, we consolidate the description of tunnel barrier heights induced by specific oxygen-vacancy induced localized states. Our work opens prospects to understand the concurrent observation of high TMR and spin transfer torque across MgO-based nanopillars.
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Submitted 23 March, 2019; v1 submitted 15 November, 2017;
originally announced November 2017.
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Rare-earth free yellow-green emitting NaZnPO4:Mn phosphor for lighting applications
Authors:
D. Haranath,
S. Mishra,
S. Yadav,
R. K. Sharma,
L. M. Kandpal,
N. Vijayan,
M. K. Dalai,
G. Sehgal,
Virendra Shanker
Abstract:
Manganese doped sodium zinc phosphate phosphor with exceptional features having ultra-violet (UV) to visible absorption (300-470 nm), yellow-green (~543 nm) broad-band photoluminescence (PL) and appreciable color co-ordinates (x=0.39, y=0.58) is reported. It has a crystal structure consists of discrete PO4 tetrahedra linked by ZnO4 and NaO4 distorted tetrahedral such that three tetrahedra, one of…
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Manganese doped sodium zinc phosphate phosphor with exceptional features having ultra-violet (UV) to visible absorption (300-470 nm), yellow-green (~543 nm) broad-band photoluminescence (PL) and appreciable color co-ordinates (x=0.39, y=0.58) is reported. It has a crystal structure consists of discrete PO4 tetrahedra linked by ZnO4 and NaO4 distorted tetrahedral such that three tetrahedra, one of each kind, share one corner. The presence of UV sensitive Zn-O-Zn bonds efficient energy transfer to Mn2+ ions resulted in brightest PL and external quantum yield of 63% at 418 nm. Our experiment demonstrated the possibility of producing inexpensive white-light emitting devices for future.
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Submitted 16 November, 2012; v1 submitted 11 October, 2012;
originally announced October 2012.
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Probing the structure, morphology and multifold blue absorption of a new red-emitting nanophosphor for LEDs
Authors:
Savvi Mishra,
Isha Bharti,
N. Vijayan,
R. K. Sharma,
L. M. Kandpal,
V. Shanker,
M. K. Dalai,
R. Rajeswari,
C. K. Jayasankar,
S. Surendra Babu,
D. Haranath
Abstract:
There has been a stringent demand for blue (~450-470 nm) absorbing and red (~611 nm) emitting material system in phosphor converted white light emitting diodes (WLEDs) available in the market. Conventionally used red-emitting Y2O3:Eu3+phosphor has negligible absorption for blue light produced by GaInN based LED chip. To address this issue, a new red-emitting Gd2CaZnO5:Eu3+ (GCZO:Eu3+) nanophosphor…
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There has been a stringent demand for blue (~450-470 nm) absorbing and red (~611 nm) emitting material system in phosphor converted white light emitting diodes (WLEDs) available in the market. Conventionally used red-emitting Y2O3:Eu3+phosphor has negligible absorption for blue light produced by GaInN based LED chip. To address this issue, a new red-emitting Gd2CaZnO5:Eu3+ (GCZO:Eu3+) nanophosphor system having exceptionally strong absorption for blue (~465 nm) and significant red (~611 nm) photoluminescence (PL) is presented. This is attributed to a dominant f-f transition (5D0\rightarrow7F2) of Eu3+ ions, aroused due to an efficient energy transfer from the Gd3+ sites of the host lattice to Eu3+ ions. X-ray diffraction and microscopy observations revealed the nanocrystalline nature and a bit elongated morphology of the sample respectively. While the energy dispersive x-ray analysis identified the chemical constituents of the GCZO:Eu3+ nanophosphor, the color overlay imaging confirmed the substitution of Eu3+ for Gd3+ ions. It is highly anticipated that the multifold absorption at ~465 nm would certainly improve the color rendering properties of existing WLEDs.
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Submitted 15 August, 2012;
originally announced August 2012.
