Band degeneracy, resonant level formation and low thermal conductivity in dilute In and Ga co-doped thermoelectric compound SnTe
Authors:
Gaurav Jamwal,
Ankit Kumar,
Mohd Warish,
Shruti Chakravarty,
Saravanan Muthiah,
Asokan Kandasami,
Asad Niazi
Abstract:
We report the effect of co-do** of In and Ga at low concentrations on the structural, electronic, and thermoelectric properties of SnTe based compositions $Sn_{1.03-2x}In_{x}Ga_{x}Te$ (x = 0, 0.01, 0.02, 0.04) prepared by the solid-state route and spark plasma sintering (SPS). All compositions formed in the fcc structure (Fm-3m) with no other impurity phase. The optical band gap increased with t…
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We report the effect of co-do** of In and Ga at low concentrations on the structural, electronic, and thermoelectric properties of SnTe based compositions $Sn_{1.03-2x}In_{x}Ga_{x}Te$ (x = 0, 0.01, 0.02, 0.04) prepared by the solid-state route and spark plasma sintering (SPS). All compositions formed in the fcc structure (Fm-3m) with no other impurity phase. The optical band gap increased with the co-do**, indicative of band convergence effects. First principle electronic structure calculations showed band convergence and the formation of resonant levels, due to Ga and In do** respectively. The carrier concentration increased on hole-do** by In and Ga ions while carrier mobility decreased due to impurity scattering. The resistivity increased with temperature, indicative of the degenerate semiconducting character of the compounds. The Seebeck coefficient of the doped samples increased linearly with temperature, reaching 85 - 95 $μ$V/K at 783 K. Thermal conductivity decreased sharply with co-do**, and the lattice thermal conductivity dropped to 0.42 W$m^{-1}$ $K^{-1}$ above 750 K. The enhanced power factor and low lattice thermal conductivity on do** resulted in a maximum figure of merit ZT = 0.34 at 773 K, twice that of the pristine SnTe.
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Submitted 3 May, 2023;
originally announced May 2023.
Disentanglement of intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt
Authors:
Utkarsh Shashank,
Yoji Nakamura,
Yu Kusaba,
Takafumi Tomoda,
Razia Nongjai,
Asokan Kandasami,
Rohit Medwal,
Rajdeep Singh Rawat,
Hironori Asada,
Surbhi Gupta,
Yasuhiro Fukuma
Abstract:
The rapidly evolving utilization of spin Hall effect (SHE) arising from spin-orbit coupling in 5d transition metals and alloys have made giant strides in the development of designing low-power, robust and non-volatile magnetic memory. Recent studies, on incorporating non-metallic lighter elements such as oxygen, nitrogen and sulfur into 5d transition metals, have shown an enhancement in dam**-li…
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The rapidly evolving utilization of spin Hall effect (SHE) arising from spin-orbit coupling in 5d transition metals and alloys have made giant strides in the development of designing low-power, robust and non-volatile magnetic memory. Recent studies, on incorporating non-metallic lighter elements such as oxygen, nitrogen and sulfur into 5d transition metals, have shown an enhancement in dam**-like torque efficiency θ_DL due to the modified SHE, but the mechanism behind this enhancement is not clear. In this paper, we study θ_DL at different temperatures (100-293 K) to disentangle the intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt. We observe a crossover of intrinsic to extrinsic side-jump mechanism as the implantation dose increases from 2*10^16 ions/cm2 to 1*10^17 ions/cm2. A sudden decrease in the intrinsic spin Hall conductivity is counterbalanced by the increase in the side-jump induced SHE efficiency. These results conclude that studying θ_DL as a function of implantation dose, and also as a function of temperature, is important to understand the physical mechanism contributing to SHE, which has so far been unexplored in incorporating non-metallic element in 5d transition metals.
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Submitted 7 November, 2022;
originally announced November 2022.
