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Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator
Authors:
Peng Li,
**jun Ding,
Steven S. -L. Zhang,
James Kally,
Timothy Pillsbury,
Olle G. Heinonen,
Gaurab Rimal,
Chong Bi,
August DeMann,
Stuart B. Field,
Weigang Wang,
**ke Tang,
J. S. Jiang,
Axel Hoffmann,
Nitin Samarth,
Mingzhong Wu
Abstract:
A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that ha…
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A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T=2-3 K and an AHE at T=80-300 K. Over T=3-80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to an interfacial DMI interaction. The DMI strength estimated is substantially higher than that in heavy metal-based systems.
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Submitted 16 December, 2020;
originally announced December 2020.
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Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator
Authors:
Tao Liu,
James Kally,
Timothy Pillsbury,
Chuanpu Liu,
Houchen Chang,
**jun Ding,
Yang Cheng,
Maria Hilse,
Roman Engel-Herbert,
Anthony Richardella,
Nitin Samarth,
Mingzhong Wu
Abstract:
This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the dam** in Y3Fe5O12. Such TSS-induced c…
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This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the dam** in Y3Fe5O12. Such TSS-induced changes become more pronounced as the temperature decreases from 300 K to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.
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Submitted 6 June, 2020;
originally announced June 2020.
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Fermi Level Dependent Spin Pum** from a Magnetic Insulator into a Topological Insulator
Authors:
Hailong Wang,
James Kally,
Cuneyt Sahin,
Tao Liu,
Wilson Yanez,
Eric J. Kamp,
Anthony Richardella,
Mingzhong Wu,
Michael E. Flatte,
Nitin Samarth
Abstract:
Topological spintronics aims to exploit the spin-momentum locking in the helical surface states of topological insulators for spin-orbit torque devices. We address a fundamental question that still remains unresolved in this context: does the topological surface state alone produce the largest values of spin-charge conversion efficiency or can the strongly spin-orbit coupled bulk states also contr…
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Topological spintronics aims to exploit the spin-momentum locking in the helical surface states of topological insulators for spin-orbit torque devices. We address a fundamental question that still remains unresolved in this context: does the topological surface state alone produce the largest values of spin-charge conversion efficiency or can the strongly spin-orbit coupled bulk states also contribute significantly? By studying the Fermi level dependence of spin pum** in topological insulator/ferrimagnetic insulator bilayers, we show that the spin Hall conductivity is constant when the Fermi level is tuned across the bulk band gap, consistent with a full bulk band calculation. The results suggest a new perspective, wherein "bulk-surface correspondence" allows spin-charge conversion to be simultaneously viewed either as coming from the full bulk band, or from spin-momentum locking of the surface state.
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Submitted 26 June, 2019;
originally announced June 2019.
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Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures
Authors:
Yang Lv,
James Kally,
Tao Liu,
Protyush Sahu,
Mingzhong Wu,
Nitin Samarth,
Jian-** Wang
Abstract:
Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator d…
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Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metallic layer and low Curie temperature, respectively. Here, we report large USRMR in a new material category - magnetic insulator/topological insulator bi-layered heterostructures. Such structures exhibit USRMR that is about an order of magnitude larger than the highest values reported so far in all-metal Ta/Co bilayers. We also demonstrate current-induced magnetization switching aided by an Oersted field, and electrical read out by the USRMR, as a prototype memory device.
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Submitted 23 June, 2018;
originally announced June 2018.
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Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures
Authors:
Yang Lv,
James Kally,
Delin Zhang,
Joon Sue Lee,
Mahdi Jamali,
Nitin Samarth,
Jian-** Wang
Abstract:
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments at room temperature. However, memory or logic spin devices based upon such switching require a non-optimal three terminal geometry, with two terminals for the…
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The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments at room temperature. However, memory or logic spin devices based upon such switching require a non-optimal three terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two terminal device geometry is now possible by exploiting the recent discovery of a unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and (at low temperature) in magnetically doped topological insulator heterostructures. We report the observation of unidirectional spin Hall magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure-of-merit (magnetoresistance per current density per total resistance) that is comparable to the highest reported values in all-metal Ta/Co bilayers.
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Submitted 23 January, 2017;
originally announced January 2017.
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Surface state dominated spin-charge current conversion in topological insulator/ferromagnetic insulator heterostructures
Authors:
Hailong Wang,
James Kally,
Joon Sue Lee,
Tao Liu,
Houchen Chang,
Danielle Reifsnyder Hickey,
Andre Mkhoyan,
Mingzhong Wu,
Anthony Richardella,
Nitin Samarth
Abstract:
We report the observation of ferromagnetic resonance-driven spin pum** signals at room temperature in three-dimensional topological insulator thin films -- Bi2Se3 and (Bi,Sb)2Te3 -- deposited by molecular beam epitaxy on yttrium iron garnet thin films. By systematically varying the Bi2Se3 film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edel…
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We report the observation of ferromagnetic resonance-driven spin pum** signals at room temperature in three-dimensional topological insulator thin films -- Bi2Se3 and (Bi,Sb)2Te3 -- deposited by molecular beam epitaxy on yttrium iron garnet thin films. By systematically varying the Bi2Se3 film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (lambda_IREE), increases dramatically as the film thickness is increased from 2 quintuple layers, saturating above 6 quintuple layers. This suggests a dominant role of surface states in spin and charge interconversion in topological insulator/ferromagnet heterostructures. Our conclusion is further corroborated by studying a series of YIG/(BiSb)2Te3 heterostructures. Finally, we use the ferromagnetic resonance linewidth broadening and the inverse Rashba-Edelstein signals to determine the effective interfacial spin mixing conductance and lambda_IREE.
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Submitted 13 July, 2016;
originally announced July 2016.
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Gaps and pseudo-gaps at the Mott quantum Critical point in the perovskite rare earth nickelates
Authors:
S. James Allen,
Adam J. Hauser,
Evgeny Mikheev,
Jack Y. Zhang,
Nelson E. Moreno,
Junwoo Son,
Daniel G. Ouellette,
James Kally,
Alex Kozhanov,
Leon Balents,
Susanne Stemmer
Abstract:
We report on tunneling measurements that reveal for the first time the evolution of the quasi-particle state density across the bandwidth controlled Mott metal to insulator transition in the rare earth perovskite nickelates. In this, a canonical class of transition metal oxides, we study in particular two materials close to the T=0 metal-insulator transition: NdNiO3 , an antiferromagnetic insulato…
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We report on tunneling measurements that reveal for the first time the evolution of the quasi-particle state density across the bandwidth controlled Mott metal to insulator transition in the rare earth perovskite nickelates. In this, a canonical class of transition metal oxides, we study in particular two materials close to the T=0 metal-insulator transition: NdNiO3 , an antiferromagnetic insulator, and LaNiO3, a correlated metal. We measure a sharp gap in NdNiO3, which has an insulating ground state, of ~ 30 meV. Remarkably, metallic LaNiO3 exhibits a pseudogap of the same order that presages the metal insulator transition. The smallness of both the gap and pseudogap suggests they arise from a common origin: proximity to a quantum critical point at or near the T=0 metal-insulator transition. It also supports theoretical models of the quantum phase transition in terms of spin and charge instabilities of an itinerant Fermi surface.
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Submitted 9 April, 2014;
originally announced April 2014.
