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Photon phase shift at the few-photon level and optical switching by a quantum dot in a microcavity
Authors:
L. M. Wells,
S. Kalliakos,
B. Villa,
D. J. P. Ellis,
R. M. Stevenson,
A. J. Bennett,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
We exploit the nonlinearity arising from the spin-photon interaction in an InAs quantum dot to demonstrate phase shifts of scattered light pulses at the single-photon level. Photon phase shifts of close to 90 degrees are achieved using a charged quantum dot in a micropillar cavity. We also demonstrate a photon phase switch by using a spin-pum** mechanism through Raman transitions in an in-plane…
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We exploit the nonlinearity arising from the spin-photon interaction in an InAs quantum dot to demonstrate phase shifts of scattered light pulses at the single-photon level. Photon phase shifts of close to 90 degrees are achieved using a charged quantum dot in a micropillar cavity. We also demonstrate a photon phase switch by using a spin-pum** mechanism through Raman transitions in an in-plane magnetic field. The experimental findings are supported by a theoretical model which explores the dynamics of the system. Our results demonstrate the potential of quantum dot-induced nonlinearities for quantum information processing.
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Submitted 18 July, 2019;
originally announced July 2019.
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Controllable photonic time-bin qubits from a quantum dot
Authors:
J. P. Lee,
L. M. Wells,
B. Villa,
S. Kalliakos,
R. M. Stevenson,
D. J. P. Ellis,
I. Farrer,
D. A. Ritchie,
A. J. Bennett,
A. J. Shields
Abstract:
Photonic time bin qubits are well suited to transmission via optical fibres and waveguide circuits. The states take the form $\frac{1}{\sqrt{2}}(α\ket{0} + e^{iφ}β\ket{1})$, with $\ket{0}$ and $\ket{1}$ referring to the early and late time bin respectively. By controlling the phase of a laser driving a spin-flip Raman transition in a single-hole-charged InAs quantum dot we demonstrate complete con…
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Photonic time bin qubits are well suited to transmission via optical fibres and waveguide circuits. The states take the form $\frac{1}{\sqrt{2}}(α\ket{0} + e^{iφ}β\ket{1})$, with $\ket{0}$ and $\ket{1}$ referring to the early and late time bin respectively. By controlling the phase of a laser driving a spin-flip Raman transition in a single-hole-charged InAs quantum dot we demonstrate complete control over the phase, $φ$. We show that this photon generation process can be performed deterministically, with only a moderate loss in coherence. Finally, we encode different qubits in different energies of the Raman scattered light, demonstrating wavelength division multiplexing at the single photon level.
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Submitted 2 April, 2018;
originally announced April 2018.
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In-plane emission of indistinguishable photons generated by an integrated quantum emitter
Authors:
Sokratis Kalliakos,
Yarden Brody,
Andre Schwagmann,
Anthony J. Bennett,
Martin B. Ward,
David J. P. Ellis,
Joanna Skiba-Szymanska,
Ian Farrer,
Jonathan P. Griffiths,
Geb A. C. Jones,
David A. Ritchie,
Andrew J. Shields
Abstract:
We demonstrate the emission of indistinguishable photons along a semiconductor chip originating from carrier recombination in an InAs quantum dot. The emitter is integrated in the waveguiding region of a photonic crystal structure, allowing for on-chip light propagation. We perform a Hong-Ou-Mandel-type of experiment with photons collected from the exit of the waveguide and we observe two-photon i…
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We demonstrate the emission of indistinguishable photons along a semiconductor chip originating from carrier recombination in an InAs quantum dot. The emitter is integrated in the waveguiding region of a photonic crystal structure, allowing for on-chip light propagation. We perform a Hong-Ou-Mandel-type of experiment with photons collected from the exit of the waveguide and we observe two-photon interference under continuous wave excitation. Our results pave the way for the integration of quantum emitters in advanced photonic quantum circuits.
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Submitted 16 June, 2014;
originally announced June 2014.
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On-chip generation and guiding of quantum light from a site-controlled quantum dot
Authors:
Ayesha Jamil,
Joanna Skiba-Szymanska,
Sokratis Kalliakos,
Andre Schwagmann,
Martin B. Ward,
Yarden Brody,
David J. P. Ellis,
Ian Farrer,
Jonathan P. Griffiths,
Geb A. C. Jones,
David A. Ritchie,
Andrew J. Shields
Abstract:
We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device scale arrays of quantum dots are formed by a two step regrowth process. We precisely locate the propagating region of a unidirectional photonic crystal waveguide with respect to the quantum dot nucleation site. Under pulsed o…
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We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device scale arrays of quantum dots are formed by a two step regrowth process. We precisely locate the propagating region of a unidirectional photonic crystal waveguide with respect to the quantum dot nucleation site. Under pulsed optical excitation, the multiphoton emission probability from the exit of the waveguide is 12 \pm 5 % before any background correction. Our results are a major step towards the deterministic integration of a quantum emitter with the waveguiding components of photonic quantum circuits.
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Submitted 13 March, 2014;
originally announced March 2014.
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On-chip single photon emission from an integrated semiconductor quantum dot into a photonic crystal waveguide
Authors:
Andre Schwagmann,
Sokratis Kalliakos,
Ian Farrer,
Jonathan P. Griffiths,
Geb A. C. Jones,
David A. Ritchie,
Andrew J. Shields
Abstract:
We demonstrate the in-plane emission of highly-polarized single photons from an InAs quantum dot embedded into a photonic crystal waveguide. The spontaneous emission rates are Purcell-enhanced by the coupling of the quantum dot to a slow-light mode of the waveguide. Photon-correlation measurements confirm the sub-Poissonian statistics of the in-plane emission. Under optical pulse excitation, singl…
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We demonstrate the in-plane emission of highly-polarized single photons from an InAs quantum dot embedded into a photonic crystal waveguide. The spontaneous emission rates are Purcell-enhanced by the coupling of the quantum dot to a slow-light mode of the waveguide. Photon-correlation measurements confirm the sub-Poissonian statistics of the in-plane emission. Under optical pulse excitation, single photon emission rates of up to 19 MHz into the guided mode are demonstrated, which corresponds to a device efficiency of 24%. These results herald the monolithic integration of sources in photonic quantum circuits.
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Submitted 17 January, 2012;
originally announced January 2012.
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Determination of Edge Purity in Bilayer Graphene Using micro-Raman Spectroscopy
Authors:
Milan Begliarbekov,
Onejae Sul,
Sokratis Kalliakos,
Eui-Hyeok Yang,
Stefan Strauf
Abstract:
Polarization resolved micro-Raman spectroscopy was carried out at the edges of bilayer graphene. We find strong dependence of the intensity of the G band on the incident laser polarization, with its intensity dependence being 90 degrees out of phase for the armchair and zigzag case, in accordance with theoretical predictions. For the case of mixed-state edges we demonstrate that the polarization c…
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Polarization resolved micro-Raman spectroscopy was carried out at the edges of bilayer graphene. We find strong dependence of the intensity of the G band on the incident laser polarization, with its intensity dependence being 90 degrees out of phase for the armchair and zigzag case, in accordance with theoretical predictions. For the case of mixed-state edges we demonstrate that the polarization contrast reflects the fractional composition of armchair and zigzag edges, providing a monitor of edge purity, which is an important parameter for the development of efficient nanoelectronic devices.
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Submitted 29 June, 2010;
originally announced June 2010.
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A molecular state of correlated electrons in a quantum dot
Authors:
Sokratis Kalliakos,
Massimo Rontani,
Vittorio Pellegrini,
Cesar Pascual Garcia,
Aron Pinczuk,
Guido Goldoni,
Elisa Molinari,
Loren N. Pfeiffer,
Ken W. West
Abstract:
Correlation among particles in finite quantum systems leads to complex behaviour and novel states of matter. One remarkable example is predicted to occur in a semiconductor quantum dot (QD) where at vanishing density the Coulomb correlation among electrons rigidly fixes their relative position as that of the nuclei in a molecule. In this limit, the neutral few-body excitations are roto-vibration…
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Correlation among particles in finite quantum systems leads to complex behaviour and novel states of matter. One remarkable example is predicted to occur in a semiconductor quantum dot (QD) where at vanishing density the Coulomb correlation among electrons rigidly fixes their relative position as that of the nuclei in a molecule. In this limit, the neutral few-body excitations are roto-vibrations, which have either rigid-rotor or relative-motion character. In the weak-correlation regime, on the contrary, the Coriolis force mixes rotational and vibrational motions. Here we report evidence of roto-vibrational modes of an electron molecular state at densities for which electron localization is not yet fully achieved. We probe these collective modes by inelastic light scattering in QDs containing four electrons. Spectra of low-lying excitations associated to changes of the relative-motion wave function -the analogues of the vibration modes of a conventional molecule- do not depend on the rotational state represented by the total angular momentum. Theoretical simulations via the configuration-interaction (CI) method are in agreement with the observed roto-vibrational modes and indicate that such molecular excitations develop at the onset of short-range correlation.
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Submitted 12 February, 2009;
originally announced February 2009.
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Optical Anisotropy of Electronic Excitations in Elliptical Quantum Dots
Authors:
Achintya Singha,
Vittorio Pellegrini,
Sokratis Kalliakos,
Biswajit Karmakar,
Aron Pinczuk,
Loren N. Pfeiffer,
Ken W. West
Abstract:
The authors report that anisotropic confining potentials in laterally-coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of inter-shell collective electronic excitations. The observed anisotropies are revealed by inelastic light scattering as a function of the in-plane direction of light polarization and can be finely controlled by modifying the geome…
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The authors report that anisotropic confining potentials in laterally-coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of inter-shell collective electronic excitations. The observed anisotropies are revealed by inelastic light scattering as a function of the in-plane direction of light polarization and can be finely controlled by modifying the geometrical shape of the QDs. These experiments show that the tuning of the QD confinement potential offers a powerful method to manipulate electronic states and far-infrared inter-shell optical transitions in quantum dots.
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Submitted 31 October, 2008;
originally announced October 2008.
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Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots
Authors:
Sokratis Kalliakos,
Vittorio Pellegrini,
Cesar Pascual Garcia,
Aron Pinczuk,
Loren N. Pfeiffer,
Ken. W. West
Abstract:
Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells…
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Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells by resonant inelastic light scattering. These findings open the way to the manipulation of single electrons in these quantum dots without the need of external metallic gates.
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Submitted 2 January, 2008;
originally announced January 2008.
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Control of optical emission in doped GaAs/AlGaAs nanofabricated quantum dots
Authors:
Sokratis Kalliakos,
Cesar Pascual Garcia,
Vittorio Pellegrini,
Marian Zamfirescu,
Lucia Cavigli,
Massimo Gurioli,
Anna Vinattieri,
Aron Pinczuk,
Brian S. Dennis,
Loren N. Pfeiffer,
Ken W. West
Abstract:
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Excitonic-like and biexcitonic-like emiss…
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Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Excitonic-like and biexcitonic-like emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated QDs for applications in areas that require fine control of optical emission.
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Submitted 2 March, 2007;
originally announced March 2007.
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Observation of low-lying excitations of electrons in coupled quantum dots
Authors:
Cesar Pascual Garcia,
Sokratis Kalliakos,
Vittorio Pellegrini,
Aron Pinczuck,
Brian S. Dennis,
Loren N. Pfeiffer,
Ken W. West
Abstract:
Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by the interplay between the QD confinement energy $\hbar ω_0$ and the tunneling gap $Δ_{SAS}$, the splitting between the symmetric and anti-symmetric delocalize…
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Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by the interplay between the QD confinement energy $\hbar ω_0$ and the tunneling gap $Δ_{SAS}$, the splitting between the symmetric and anti-symmetric delocalized single particle molecular states. The narrow line-widths displayed by electronic excitations in these nanostructures indicate promising venues for the spectroscopic investigation of entanglement of electron states in these artificial molecules.
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Submitted 23 November, 2005;
originally announced November 2005.
