Showing 1–2 of 2 results for author: Kalikka, J
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Low Thermal Conductivity Phase Change Memory Superlattices
Authors:
**g Ning,
Xilin Zhou,
Yunzheng Wang,
Takashi Yagi,
Janne Kalikka,
Siew Lang Teo,
Zhitang Song,
Michel Bosman,
Robert E. Simpson
Abstract:
Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase t…
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Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by do** the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.
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Submitted 30 September, 2022;
originally announced September 2022.
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Layered 2D crystals by design: optimisation of Sb$_2$Te$_3$-GeTe van der Waals superlattices
Authors:
Janne Kalikka,
Xilin Zhou,
Giacomo Nannicini,
Robert E. Simpson
Abstract:
Herein a genetic algorithm for optimising the design of layered 2D heterostructure is proposed. As a proof-of-concept it is applied to Sb$_2$Te$_3$-GeTe phase-change material superlattices, and the resulting lowest energy structure is grown experimentally. The similarity of the computational and experimental structures is verified with the comparison of XRD spectra. The structure is found to be wi…
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Herein a genetic algorithm for optimising the design of layered 2D heterostructure is proposed. As a proof-of-concept it is applied to Sb$_2$Te$_3$-GeTe phase-change material superlattices, and the resulting lowest energy structure is grown experimentally. The similarity of the computational and experimental structures is verified with the comparison of XRD spectra. The structure is found to be within 0.92 meV/at. from the energetically most favorable known structure for Ge$_2$Sb$_2$Te$_5$.
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Submitted 3 September, 2015;
originally announced September 2015.
