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Making Atomic-Level Magnetism Tunable with Light at Room Temperature
Authors:
V. O. Jimenez,
Y. T. H. Pham,
D. Zhou,
M. Z. Liu,
F. A. Nugera,
V. Kalappattil,
T. Eggers,
K. Hoang,
D. L. Duong,
M. Terrones,
H. R. Gutierrez,
M. H. Phan
Abstract:
The capacity to manipulate magnetization in two-dimensional dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2, where M = V, Fe, Cr; T = W, Mo; X = S, Se, Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explo…
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The capacity to manipulate magnetization in two-dimensional dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2, where M = V, Fe, Cr; T = W, Mo; X = S, Se, Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2, V-WSe2, V-MoS2). This phenomenon is attributed to excess holes in the conduction and valence bands, as well as carriers trapped in magnetic do** states, which together mediate the magnetization of the semiconducting layer. In 2D-TMD heterostructures such as VSe2/WS2 and VSe2/MoS2, we demonstrate the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism. This effect is attributed to photon absorption at the TMD layer (e.g., WS2, MoS2) that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel direction for designing 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.
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Submitted 1 May, 2023;
originally announced May 2023.
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Exchange Bias and Interface-related Effects in Two-dimensional van der Waals Magnetic Heterostructures: Open Questions and Perspectives
Authors:
Manh-Huong Phan,
Vijaysankar Kalappattil,
Valery Ortiz Jimenez,
Yen Thi Hai Pham,
Nivarthana W. Y. A. Y. Mudiyanselage,
Derick Detellem,
Chang-Ming Hung,
Amit Chanda,
Tatiana Eggers
Abstract:
The exchange bias (EB) effect is known as a fundamentally and technologically important magnetic property of a magnetic bilayer film. It is manifested as a horizontal shift in a magnetic hysteresis loop of a film subject to cooling in the presence of a magnetic field. The EB effect in van der Waals (vdW) heterostructures offers a novel approach for tuning the magnetic properties of the newly disco…
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The exchange bias (EB) effect is known as a fundamentally and technologically important magnetic property of a magnetic bilayer film. It is manifested as a horizontal shift in a magnetic hysteresis loop of a film subject to cooling in the presence of a magnetic field. The EB effect in van der Waals (vdW) heterostructures offers a novel approach for tuning the magnetic properties of the newly discovered single-layer magnets, as well as adds a new impetus to magnetic vdW heterostructures. Indeed, intriguing EB effects have recently been reported in a variety of low-dimensional vdW magnetic systems ranging from a weakly interlayer-coupled vdW magnet (e.g., Fe3GeTe2) to a bilayer composed of two different magnetic vdW materials (e.g., Fe3GeTe2/CrCl3, Fe3GeTe2/FePS3, Fe3GeTe2/MnPS3), to bilayers of two different vdW defective magnets (e.g., VSe2/MoS2), or to metallic ferromagnet/vdW defective magnet interfaces (e.g., Fe/MoS2). Despite their huge potential in spintronic device applications, the physical origins of the observed EB effects have remained elusive to researchers. We present here a critical review of the EB effect and associated phenomena such as magnetic proximity (MP) in various vdW heterostructure systems and propose approaches to addressing some of the emerging fundamental questions.
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Submitted 3 January, 2022;
originally announced January 2022.
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Large Magneto-Electric Resistance in the Topological Dirac Semimetal alpha Sn
Authors:
Yuejie Zhang,
Vijaysankar Kalappattil,
Chuanpu Liu,
Steven S. -L. Zhang,
**jun Ding,
Uppalaiah Erugu,
Jifa Tian,
**ke Tang,
Mingzhong Wu
Abstract:
The spin-momentum locking of surface states in topological quantum materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magneto-electric resistance (BMER) effect offers a completely new approach for magnetic storage and magnetic field sensing applications. The effects demonstrated so far, however, are relatively weak or for low temperatures. St…
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The spin-momentum locking of surface states in topological quantum materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magneto-electric resistance (BMER) effect offers a completely new approach for magnetic storage and magnetic field sensing applications. The effects demonstrated so far, however, are relatively weak or for low temperatures. Strong room-temperature BMER effects have now been found in topological Dirac semimetal alpha-Sn thin films. The epitaxial alpha-Sn films were grown by sputtering on silicon substrates. They showed BMER responses that are 10^6 times larger than previously reported at room temperature and also larger than that previously reported at low temperatures. These results represent a major advance toward realistic BMER applications. The data also made possible the first characterization of the three-dimensional, Fermi-level spin texture of topological surface states in alpha-Sn.
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Submitted 7 July, 2021;
originally announced July 2021.
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Light-controlled room temperature ferromagnetism in vanadium-doped tungsten diselenide semiconducting monolayers
Authors:
Valery Ortiz Jimenez,
Yen Thi Hai Pham,
Mingzu Liu,
Fu Zhang,
Vijaysankar Kalappattil,
Baleeswaraiah Muchharla,
Tatiana Eggers,
Dinh Loc Duong,
Mauricio Terrones,
Manh-Huong Phan
Abstract:
Atomically thin transition metal dichalcogenide (TMD) semiconductors hold enormous potential for modern optoelectronic devices and quantum computing applications. By inducing long-range ferromagnetism (FM) in these semiconductors through the introduction of small amounts of a magnetic dopant, it is possible to extend their potential in emerging spintronic applications. Here, we demonstrate light-m…
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Atomically thin transition metal dichalcogenide (TMD) semiconductors hold enormous potential for modern optoelectronic devices and quantum computing applications. By inducing long-range ferromagnetism (FM) in these semiconductors through the introduction of small amounts of a magnetic dopant, it is possible to extend their potential in emerging spintronic applications. Here, we demonstrate light-mediated, room temperature (RT) FM, in V-doped WS2 (V-WS2) monolayers. We probe this effect using the principle of magnetic LC resonance, which employs a soft ferromagnetic Co-based microwire coil driven near its resonance in the radio frequency (RF) regime. The combination of LC resonance with an extraordinary giant magneto-impedance effect, renders the coil highly sensitive to changes in the magnetic flux through its core. We then place the V-WS2 monolayer at the core of the coil where it is excited with a laser while its change in magnetic permeability is measured. Notably, the magnetic permeability of the monolayer is found to depend on the laser intensity, thus confirming light control of RT magnetism in this two-dimensional (2D) material. Guided by density functional calculations, we attribute this phenomenon to the presence of excess holes in the conduction and valence bands, as well as carriers trapped in the magnetic do** states, which in turn mediates the magnetization of the V-WS2 monolayer. These findings provide a unique route to exploit light-controlled ferromagnetism in low powered 2D spintronic devices capable of operating at RT.
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Submitted 3 July, 2020;
originally announced July 2020.
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Monolayer Vanadium-doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor
Authors:
Fu Zhang,
Boyang Zheng,
Amritanand Sebastian,
Hans Olson,
Mingzu Liu,
Kazunori Fujisawa,
Yen Thi Hai Pham,
Valery Ortiz Jimenez,
Vijaysankar Kalappattil,
Leixin Miao,
Tianyi Zhang,
Rahul Pendurthi,
Yu Lei,
Ana Laura Elías,
Yuanxi Wang,
Nasim Alem,
Patrick E. Hopkins,
Saptarshi Das,
Vincent H. Crespi,
Manh-Huong Phan,
Mauricio Terrones
Abstract:
Dilute magnetic semiconductors, achieved through substitutional do** of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional systems such as transition metal dichalcogenides that accentuate interactions and activate valley…
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Dilute magnetic semiconductors, achieved through substitutional do** of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room-temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal do** levels without dopant aggregation. Here we describe room-temperature ferromagnetic order obtained in semiconducting vanadium-doped tungsten disulfide monolayers produced by a reliable single-step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation. These monolayers develop p-type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of a few atomic percent and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium-vanadium spacings, as supported by transmission electron microscopy, magnetometry and first-principles calculations. Room-temperature two-dimensional dilute magnetic semiconductors provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures them into the realm of practical application.
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Submitted 5 May, 2020;
originally announced May 2020.
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Tunable Ferromagnetism and Thermally Induced Spin Flip in Vanadium-doped Tungsten Diselenide Monolayers at Room Temperature
Authors:
Yen Thi Hai Pham,
Mingzu Liu,
Valery Ortiz Jimenez,
Fu Zhang,
Vijaysankar Kalappattil,
Zhuohang Yu,
Ke Wang,
Teague Williams,
Mauricio Terrones,
Manh-Huong Phan
Abstract:
The outstanding optoelectronic and valleytronic properties of transition metal dichalcogenides (TMDs) have triggered intense research efforts by the scientific community. An alternative to induce long-range ferromagnetism (FM) in TMDs is by introducing magnetic dopants to form a dilute magnetic semiconductor. Enhancing ferromagnetism in these semiconductors not only represents a key step towards m…
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The outstanding optoelectronic and valleytronic properties of transition metal dichalcogenides (TMDs) have triggered intense research efforts by the scientific community. An alternative to induce long-range ferromagnetism (FM) in TMDs is by introducing magnetic dopants to form a dilute magnetic semiconductor. Enhancing ferromagnetism in these semiconductors not only represents a key step towards modern TMD-based spintronics, but also enables exploration of new and exciting dimensionality-driven magnetic phenomena. To this end, we show tunable ferromagnetism at room temperature and a thermally induced spin flip (TISF) in monolayers of V-doped WSe2. As vanadium concentrations increase within the WSe2 monolayers the saturation magnetization increases, and it is optimal at ~4at.% vanadium; the highest do**/alloying level ever achieved for V-doped WSe2 monolayers. The TISF occurs at ~175 K and becomes more pronounced upon increasing the temperature towards room temperature. We demonstrate that TISF can be manipulated by changing the vanadium concentration within the WSe2 monolayers. We attribute TISF to the magnetic field and temperature dependent flip** of the nearest W-site magnetic moments that are antiferromagnetically coupled to the V magnetic moments in the ground state. This is fully supported by a recent spin-polarized density functional theory calculation. Our findings pave the way for the development of novel spintronic and valleytronic nanodevices based on atomically thin magnetic semiconductors and stimulate further studies in this rapidly expanding research field of 2D magnetism.
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Submitted 1 May, 2020;
originally announced May 2020.
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Giant Spin Seebeck Effect through an Interface Organic Semiconductor
Authors:
V. Kalappattil,
R. Geng,
R. Das,
H. Luong,
M. Pham,
T. Nguyen,
A. Popescu,
L. M. Woods,
M. Kläui,
H. Srikanth,
M. H. Phan
Abstract:
Interfacing an organic semiconductor C60 with a non-magnetic metallic thin film (Cu or Pt) has created a novel heterostructure that is ferromagnetic at ambient temperature, while its interface with a magnetic metal (Fe or Co) can tune the anisotropic magnetic surface property of the material. Here, we demonstrate that sandwiching C60 in between a magnetic insulator (Y3Fe5O12: YIG) and a non-magnet…
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Interfacing an organic semiconductor C60 with a non-magnetic metallic thin film (Cu or Pt) has created a novel heterostructure that is ferromagnetic at ambient temperature, while its interface with a magnetic metal (Fe or Co) can tune the anisotropic magnetic surface property of the material. Here, we demonstrate that sandwiching C60 in between a magnetic insulator (Y3Fe5O12: YIG) and a non-magnetic, strong spin-orbit metal (Pt) promotes highly efficient spin current transport via the thermally driven spin Seebeck effect (SSE). Experiments and first principles calculations consistently show that the presence of C60 reduces significantly the conductivity mismatch between YIG and Pt and the surface perpendicular magnetic anisotropy of YIG, giving rise to enhanced spin mixing conductance across YIG/C60/Pt interfaces. As a result, a 600% increase in the SSE voltage (VLSSE) has been realized in YIG/C60/Pt relative to YIG/Pt. Temperature-dependent SSE voltage measurements on YIG/C60/Pt with varying C60 layer thicknesses also show an exponential increase in VLSSE at low temperatures below 200 K, resembling the temperature evolution of spin diffusion length of C60. Our study emphasizes the important roles of the magnetic anisotropy and the spin diffusion length of the intermediate layer in the SSE in YIG/C60/Pt structures, providing a new pathway for develo** novel spin-caloric materials.
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Submitted 11 May, 2019;
originally announced May 2019.
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A highly sensitive magnetic sensor using a 2D van der Waals ferromagnetic material
Authors:
Valery Ortiz Jimenez,
Vijaysankar Kalappattil,
Tatiana Eggers,
Manuel Bonilla,
Sadhu Kolekar,
Pham Thanh Huy,
Matthias Batzill,
Manh-Huong Phan
Abstract:
Two-dimensional (2D) van der Waals ferromagnetic materials are emerging as promising candidates for applications in ultra-compact spintronic nanodevices, nanosensors, and information storage. Our recent discovery of the strong room temperature ferromagnetism in single layers of VSe2 grown on graphite or MoS2 substrate has opened new opportunities to explore these ultrathin magnets for such applica…
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Two-dimensional (2D) van der Waals ferromagnetic materials are emerging as promising candidates for applications in ultra-compact spintronic nanodevices, nanosensors, and information storage. Our recent discovery of the strong room temperature ferromagnetism in single layers of VSe2 grown on graphite or MoS2 substrate has opened new opportunities to explore these ultrathin magnets for such applications. In this paper, we present a new type of magnetic sensor that utilizes the single layer VSe2 film as a highly sensitive magnetic core. The sensor relies in changes in resonance frequency of the LC circuit composed of a soft ferromagnetic microwire coil that contains the ferromagnetic VSe2 film subject to applied DC magnetic fields. The sensitivity of the sensor reaches an extremely high value of 16x10^6 Hz/Oe, making it an excellent candidate for a wide range of magnetic sensing applications.
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Submitted 22 February, 2019;
originally announced February 2019.
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Evidence of long-range ferromagnetic order and spin frustration effects in the double perovskite $La_2CoMnO_6$
Authors:
R. P. Madhogaria,
R. Das,
E. M. Clements,
N. T. Dang,
D. P. Kozlenko,
N. S. Bingham,
V. Kalappattil,
M. H. Phan,
H. Srikanth
Abstract:
We present a comprehensive study on the magnetic structure, dynamics, and phase evolution in the single-phase double perovskite $La_2CoMnO_6$. The mixed valence state due to oxygen deficiency is verified by X-ray photoelectron spectroscopy, and confirms a double ferromagnetic transition observed in DC magnetization. Neutron diffraction reveals that the magnetic structure is dominated by long-range…
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We present a comprehensive study on the magnetic structure, dynamics, and phase evolution in the single-phase double perovskite $La_2CoMnO_6$. The mixed valence state due to oxygen deficiency is verified by X-ray photoelectron spectroscopy, and confirms a double ferromagnetic transition observed in DC magnetization. Neutron diffraction reveals that the magnetic structure is dominated by long-range ferromagnetic ordering, which is further corroborated by a critical exponents analysis of the paramagnetic to ferromagnetic phase transition. An analysis of the magnetization dynamics by means of linear and nonlinear ac magnetic susceptibilities marks the presence of two distinct cluster glass-like states that emerge at low temperatures. The isothermal entropy change as a function of temperature and magnetic field (H) is exploited to investigate the mechanism of stabilization of the magnetic phases across the H-T phase diagram. In the regime of the phase diagram where thermal energy is sufficiently low, regions of competing interactions due to local disorder become stabilized and display glass-like dynamics. The freezing mechanism of clusters is illustrated using a unique probe of transverse susceptibility that isolates the effects of the local anisotropy of the spin clusters. The results are summarized in a new H-T phase diagram of $La_2CoMnO_6$ revealed for the first time from these data.
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Submitted 5 November, 2018;
originally announced November 2018.
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Angle resolved photoemission spectroscopy reveals spin charge separation in metallic MoSe2 grain boundary
Authors:
Yu**g Ma,
Horacio Coy Diaz,
Jose Avila,
Chaoyu Chen,
Vijaysankar Kalappattil,
Raja Das,
Manh-Huong Phan,
Tilen Cadez,
Jose M. P. Carmelo,
Maria C. Asensio,
Matthias Batzill
Abstract:
Material line defects are one-dimensional structures but the search and proof of electron behaviour consistent with the reduced dimension of such defects has been so far unsuccessful. Here we show using angle resolved photoemission spectroscopy that twin-grain boundaries in the layered semiconductor MoSe2 exhibit parabolic metallic bands. The one-dimensional nature is evident from a charge density…
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Material line defects are one-dimensional structures but the search and proof of electron behaviour consistent with the reduced dimension of such defects has been so far unsuccessful. Here we show using angle resolved photoemission spectroscopy that twin-grain boundaries in the layered semiconductor MoSe2 exhibit parabolic metallic bands. The one-dimensional nature is evident from a charge density wave transition, whose periodicity is given by kF/π, consistent with scanning tunneling microscopy and angle resolved photoemission measurements. Most importantly, we provide evidence for spin- and charge-separation, the hallmark of one-dimensional quantum liquids. Our studies show that the spectral line splits into distinctive spinon and holon excitations whose dispersions exactly follow the energy-momentum dependence calculated by a Hubbard model with suitable finite-range interactions. Our results also imply that quantum wires and junctions can be isolated in line defects of other transition metal dichalcogenides, which may enable quantum transport measurements and devices.
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Submitted 8 February, 2017;
originally announced February 2017.
