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Topologically-protected single-photon sources with topological slow light photonic crystal waveguides
Authors:
Kazuhiro Kuruma,
Hironobu Yoshimi,
Yasutomo Ota,
Ryota Katsumi,
Masahiro Kakuda,
Yasuhiko Arakawa,
Satoshi Iwamoto
Abstract:
Slow light waveguides are advantageous for implementing high-performance single-photon sources required for scalable operation of integrated quantum photonic circuits (IQPCs), though such waveguides are known to suffer from propagation loss due to backscattering. A way to overcome the drawback is to use topological photonics, in which robust waveguiding in topologically-protected optical modes has…
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Slow light waveguides are advantageous for implementing high-performance single-photon sources required for scalable operation of integrated quantum photonic circuits (IQPCs), though such waveguides are known to suffer from propagation loss due to backscattering. A way to overcome the drawback is to use topological photonics, in which robust waveguiding in topologically-protected optical modes has recently been demonstrated. Here, we report single-photon sources using single quantum dots (QDs) embedded in topological slow light waveguides based on valley photonic crystals. We observe Purcell-enhanced single-photon emission from a QD into a topological slow light mode with a group index over 20 and its robust propagation even under the presence of sharp bends. These results pave the way for the realization of robust and high-performance single-photon sources indispensable for IQPCs.
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Submitted 16 July, 2022; v1 submitted 19 December, 2021;
originally announced December 2021.
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Unidirectional output from a quantum-dot single-photon source hybrid integrated on silicon
Authors:
Ryota Katsumi,
Yasutomo Ota,
Takeyoshi Tajiri,
Masahiro Kakuda,
Satoshi Iwamoto,
Hidefumi Akiyama,
Yasuhiko Arakawa
Abstract:
We report a quantum-dot single-photon source (QD SPS) hybrid integrated on a silicon waveguide embedding a photonic crystal mirror, which reflects photons and enables efficient unidirectional output from the waveguide. The silicon waveguide is constituted of a subwavelength grating so as to maintain the high efficiency even under the presence of stacking misalignment accompanied by hybrid integrat…
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We report a quantum-dot single-photon source (QD SPS) hybrid integrated on a silicon waveguide embedding a photonic crystal mirror, which reflects photons and enables efficient unidirectional output from the waveguide. The silicon waveguide is constituted of a subwavelength grating so as to maintain the high efficiency even under the presence of stacking misalignment accompanied by hybrid integration processes. Experimentally, we assembled the hybrid photonic structure by transfer printing, and demonstrated single-photon generation from a QD and its unidirectional output from the waveguide. These results point out a promising approach toward scalable integration of SPSs on silicon quantum photonics platforms.
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Submitted 10 August, 2021;
originally announced August 2021.
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Strong coupling between a single quantum dot and an L4/3 photonic crystal nanocavity
Authors:
Kazuhiro Kuruma,
Yasutomo Ota,
Masahiro Kakuda,
Satoshi Iwamoto,
Yasuhiko Arakawa
Abstract:
We demonstrate strong coupling between a single quantum dot and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (~8{\times}10^6), a small mode volume (~0.32 (λ/n)^3), and an electric field distribution with the maximum electric field lying within the host dielectric material, which facilitates strong coupling with a quantum dot. We fabricate…
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We demonstrate strong coupling between a single quantum dot and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (~8{\times}10^6), a small mode volume (~0.32 (λ/n)^3), and an electric field distribution with the maximum electric field lying within the host dielectric material, which facilitates strong coupling with a quantum dot. We fabricated L4/3 cavities and observed a high Q factor over 80,000 using photoluminescence measurement. We confirmed strong coupling between a single quantum dot and an L4/3 cavity with a Q factor of 33,000 by observing a clear anti-crossing in the spectra.
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Submitted 30 July, 2020; v1 submitted 10 June, 2020;
originally announced June 2020.
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Surface-passivated high-Q GaAs photonic crystal nanocavity with quantum dots
Authors:
Kazuhiro Kuruma,
Yasutomo Ota,
Masahiro Kakuda,
Satoshi Iwamoto,
Yasuhiko Arakawa
Abstract:
Photonic crystal (PhC) nanocavities with high quality (Q) factors have attracted much attention because of their strong spatial and temporal light confinement capability. The resulting enhanced light-matter interactions are beneficial for diverse photonic applications, ranging from on-chip optical communications to sensing. However, currently achievable Q factors for active PhC nanocavities, which…
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Photonic crystal (PhC) nanocavities with high quality (Q) factors have attracted much attention because of their strong spatial and temporal light confinement capability. The resulting enhanced light-matter interactions are beneficial for diverse photonic applications, ranging from on-chip optical communications to sensing. However, currently achievable Q factors for active PhC nanocavities, which embed active emitters inside, are much lower than those of the passive structures because of large optical loss, presumably originating from light scattering by structural imperfections and/or optical absorptions. Here, we demonstrate a significant improvement of Q factors up to ~160,000 in GaAs active PhC nanocavities using a sulfur-based surface passivation technique. This value is the highest ever reported for any active PhC nanocavities with semiconductor quantum dots. The surface-passivated cavities also exhibit reduced variation in both Q factors and cavity resonant wavelengths. We find that the improvement in the cavity performance presumably arises from suppressed light absorption at the surface of the PhC's host material by performing a set of PL measurements in spectral and time domains. With the surface passivation technique, we also demonstrate a strongly-coupled single quantum dot-cavity system based on a PhC nanocavity with a high Q factor of ~100,000. These results will pave the way for advanced quantum dot-based cavity quantum electrodynamics and for GaAs micro/nanophotonic applications containing active emitters.
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Submitted 18 May, 2020; v1 submitted 26 December, 2019;
originally announced January 2020.
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In-situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS silicon chip
Authors:
Ryota Katsumi,
Yasutomo Ota,
Alto Osada,
Takeyoshi Tajiri,
Takuto Yamaguchi,
Masahiro Kakuda,
Satoshi Iwamoto,
Hidefumi Akiyama,
Yasuhiko Arakawa
Abstract:
Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic…
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Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However, the spectral and spatial randomness inherent in the QDs pose a serious challenge for scalable implementation of multiple identical SPSs on a silicon CMOS chip. To overcome this challenge, we have been investigating a new hybrid integration technique called transfer printing, which is based on a pick-and-place operation and allows for the integration of desired QD SPSs on any locations on the silicon CMOS chips at will. Nevertheless, even in this scenario, in-situ fine tuning for perfect wavelength matching among the integrated QD SPSs will be required for interfering photons from the dissimilar sources. Here, we demonstrate in-situ wavelength tuning of QD SPSs integrated on a CMOS silicon chip. To thermally tune the emission wavelengths of the integrated QDs, we augmented the QD SPSs with optically driven heating pads. The integration of all the necessary elements was performed using transfer printing, which largely simplified the fabrication of the three-dimensional stack of micro/nanophotonic structures. We further demonstrate in-situ wavelength matching between two dissimilar QD sources integrated on the same silicon chip. Our transfer-printing-based approach will open the possibility for realizing large-scale QPICs that leverage CMOS technology.
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Submitted 30 September, 2019;
originally announced September 2019.
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Quantum-dot single-photon source on a CMOS silicon photonic chip integrated using transfer printing
Authors:
Ryota Katsumi,
Yasutomo Ota,
Alto Osada,
Takuto Yamaguchi,
Takeyoshi Tajiri,
Masahiro Kakuda,
Satoshi Iwamoto,
Hidefumi Akiyama,
Yasuhiko Arakawa
Abstract:
Silicon photonics is a powerful platform for implementing large-scale photonic integrated circuits (PICs), because of its compatibility with mature complementary-metal-oxide-semiconductor (CMOS) technology. Exploiting silicon-based PICs for quantum photonic information processing (or the so-called silicon quantum photonics) provides a promising pathway for large-scale quantum applications. For the…
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Silicon photonics is a powerful platform for implementing large-scale photonic integrated circuits (PICs), because of its compatibility with mature complementary-metal-oxide-semiconductor (CMOS) technology. Exploiting silicon-based PICs for quantum photonic information processing (or the so-called silicon quantum photonics) provides a promising pathway for large-scale quantum applications. For the development of scalable silicon quantum PICs, a major challenge is integrating on-silicon quantum light sources that deterministically emit single photons. In this regard, the use of epitaxial InAs/GaAs quantum dots (QDs) is a very promising approach, because of their capability of deterministic single-photon emission with high purity and indistinguishability. However, the required hybrid integration is inherently difficult and often lacks the compatibility with CMOS processes. Here, we demonstrate a QD single-photon source (SPS) integrated on a glass-clad silicon photonic waveguide processed by a CMOS foundry. Hybrid integration is performed using transfer printing, which enables us to integrate heterogeneous optical components in a simple pick-and-place manner and thus assemble them after the entire CMOS process is completed. We observe single-photon emission from the integrated QD and its efficient coupling into the silicon waveguide. Our transfer-printing-based approach is fully compatible with CMOS back-end processes, and thus will open the possibility for realizing large-scale quantum PICs that leverage CMOS technology.
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Submitted 30 December, 2018;
originally announced December 2018.
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Strongly coupled single quantum dot-cavity system integrated on a CMOS-processed silicon photonic chip
Authors:
Alto Osada,
Yasutomo Ota,
Ryota Katsumi,
Masahiro Kakuda,
Satoshi Iwamoto,
Yasuhiko Arakawa
Abstract:
Quantum photonic integrated circuit (QPIC) is a promising tool for constructing integrated devices for quantum technology applications. In the optical regime, silicon photonics empowered by complementary-metal-oxide-semiconductor (CMOS) technology provides optical components useful for realizing large-scale QPICs. Optical nonlinearity at the single-photon level is required for QPIC to facilitate p…
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Quantum photonic integrated circuit (QPIC) is a promising tool for constructing integrated devices for quantum technology applications. In the optical regime, silicon photonics empowered by complementary-metal-oxide-semiconductor (CMOS) technology provides optical components useful for realizing large-scale QPICs. Optical nonlinearity at the single-photon level is required for QPIC to facilitate photon-photon interaction. However, to date, realization of optical elements with deterministic( i.e., not probabilistic) single-photon nonlinearity by using silicon-based components is challenging, despite the enhancement of the functionality of QPICs based on silicon photonics. In this study, we realize for the first time a strongly coupled InAs/GaAs quantum dot-cavity quantum electrodynamics (QED) system on a CMOS-processed silicon photonic chip. The heterogeneous integration of the GaAs cavity on the silicon chip is performed by transfer printing. The cavity QED system on the CMOS photonic chip realized in this work is a promising candidate for on-chip single-photon nonlinear element, which constitutes the fundamental component for future applications based on QPIC, such as, coherent manipulation and nondestructive measurement of qubit states via a cavity, and efficient single-photon filter and router.
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Submitted 28 September, 2018;
originally announced September 2018.
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Optical coupling between atomically-thin black phosphorus and a two dimensional photonic crystal nanocavity
Authors:
Yasutomo Ota,
Rai Moriya,
Naoto Yabuki,
Miho Arai,
Masahiro Kakuda,
Satoshi Iwamoto,
Tomoki Machida,
Yasuhiko Arakawa
Abstract:
Atomically-thin black phosphorus (BP) is an emerging two dimensional (2D) material exhibiting bright photoluminescence in the near infrared. Coupling its radiation to photonic nanostructures will be an important step toward the realization of 2D material based nanophotonic devices that operate efficiently in the near infrared, which includes the technologically important optical telecommunication…
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Atomically-thin black phosphorus (BP) is an emerging two dimensional (2D) material exhibiting bright photoluminescence in the near infrared. Coupling its radiation to photonic nanostructures will be an important step toward the realization of 2D material based nanophotonic devices that operate efficiently in the near infrared, which includes the technologically important optical telecommunication wavelength bands. In this letter, we demonstrate the optical coupling between atomically-thin BP and a 2D photonic crystal nanocavity. We employed a home-build dry transfer apparatus for placing a thin BP flake on the surface of the nanocavity. Their optical coupling was analyzed through measuring cavity mode emission under optical carrier injection at room temperature.
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Submitted 28 September, 2018;
originally announced September 2018.
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Time-resolved vacuum Rabi oscillations in a quantum dot-nanocavity system
Authors:
K. Kuruma,
Y. Ota,
M. Kakuda,
S. Iwamoto,
Y. Arakawa
Abstract:
We report time-domain observation of vacuum Rabi oscillations in a single quantum dot strongly coupled to a nanocavity under incoherent optical carrier injection. We realize a photonic crystal nanocavity with a very high quality factor of >80,000 and employ it to clearly resolve the ultrafast vacuum Rabi oscillations by simple photoluminescence-based experiments. We found that the time-domain vacu…
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We report time-domain observation of vacuum Rabi oscillations in a single quantum dot strongly coupled to a nanocavity under incoherent optical carrier injection. We realize a photonic crystal nanocavity with a very high quality factor of >80,000 and employ it to clearly resolve the ultrafast vacuum Rabi oscillations by simple photoluminescence-based experiments. We found that the time-domain vacuum Rabi oscillations were largely modified when changing the pump wavelength and intensity, even when marginal changes were detected in the corresponding photoluminescence spectra. We analyze the measured time-domain oscillations by fitting to simulation curves obtained with a cavity quantum electrodynamics model. The observed modifications of the oscillation curves were mainly induced by the change in the carrier capture and dephasing dynamics in the quantum dot, as well as the change in bare-cavity emission. This result suggests that vacuum Rabi oscillations can be utilized as a highly sensitive probe for the quantum dot dynamics. Our work points out a powerful alternative to conventional spectral-domain measurements for a deeper understanding of the vacuum Rabi dynamics in quantum dot-based cavity quantum electrodynamics systems.
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Submitted 4 September, 2018; v1 submitted 15 March, 2018;
originally announced March 2018.
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Transfer-printed single photon sources coupled to wire waveguides
Authors:
Ryota Katsumi,
Yasutomo Ota,
Masahiro Kakuda,
Satoshi Iwamoto,
Yasuhiko Arakawa
Abstract:
Photonic integrated circuits (PICs) are attractive platforms to perform large-scale quantum information processing. While highly-functional PICs (e.g. silicon based photonic-circuits) and high-performance single photon sources (SPSs, e.g. compound-semiconductor quantum dots (QDs)) have been independently demonstrated, their combination for single-photon-based applications has still been limited. T…
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Photonic integrated circuits (PICs) are attractive platforms to perform large-scale quantum information processing. While highly-functional PICs (e.g. silicon based photonic-circuits) and high-performance single photon sources (SPSs, e.g. compound-semiconductor quantum dots (QDs)) have been independently demonstrated, their combination for single-photon-based applications has still been limited. This is largely due to the complexities of introducing SPSs into existing PIC platforms, which are generally realized with different materials and using distinct fabrication protocols. Here, we report a novel approach to combine SPSs and PICs prepared independently. We employ transfer printing, by which multiple desired SPSs can be integrated in a simple pick-and-place manner with a theoretical waveguide coupling efficiency >99%, fulfilling the demanding requirements of large-scale quantum applications. Experimentally, we demonstrated QD-based SPSs with high waveguide coupling efficiencies, together with the integration of two SPSs into a waveguide. Our approach will accelerate scalable fusion between modern PICs and cutting-edge quantum technologies.
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Submitted 24 January, 2018;
originally announced January 2018.
