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Possible very high transition temperatures in the infinite-layer ACuO$ _{2} $ cuprate superconductor for A={Mg, Ca, Sr, Ba}: A DFT study
Authors:
B. P. P. Mallett,
N. Gaston,
J. G. Storey,
G. V. M. Williams,
A. B. Kaiser,
J. L. Tallon
Abstract:
We show from a bond valence sum correlation that very high superconducting $ T_{c} $ values should be found in optimally hole-doped infinite-layer ACuO$ _{2} $ cuprates - up to 160~K for A = Ba. The projected increase in $ T_{c} $ across the series arises from "internal pressure" effects as A runs from Mg to Ba. We then use density functional theory to investigate these pressure effects on the ban…
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We show from a bond valence sum correlation that very high superconducting $ T_{c} $ values should be found in optimally hole-doped infinite-layer ACuO$ _{2} $ cuprates - up to 160~K for A = Ba. The projected increase in $ T_{c} $ across the series arises from "internal pressure" effects as A runs from Mg to Ba. We then use density functional theory to investigate these pressure effects on the band structure in an attempt to understand this progressive increase in $ T_{c} $. Where these materials have been synthesised we find good agreement between our calculated structural parameters and the experimental ones. We find that internal pressure associated with increasing ion size does indeed enhance the superconducting energy gap, as observed, via modifications to the electronic dispersion. Furthermore, in our calculations, pressure alters the dispersion independently of how it is applied (internal or external) so that the superconducting energy gap correlates with the unit-cell volume and a Fermi-surface shape-parameter describing ratio of next-nearest-neighbor to nearest-neighbor hop** integrals. We infer an energy scale for the pairing interaction of the order of 1~eV, well above the magnetic energy scale.
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Submitted 6 December, 2016; v1 submitted 5 November, 2013;
originally announced November 2013.
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Conductance of partially disordered graphene: Crossover from temperature-dependent to field-dependent variable-range hop**
Authors:
C. Y. Cheah,
C. Gómez-Navarro,
L. C. Jaurigue,
A. B. Kaiser
Abstract:
We report and analyze low-temperature measurements of the conductance of partially disordered reduced graphene oxide, finding that the data follow a simple crossover scenario. At room temperature, conductance is dominated by two-dimensional (2D) electric field-assisted, thermally-driven (Pollak-Riess) variable-range hop** (VRH) through highly-disordered regions. However, at lower temperatures T,…
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We report and analyze low-temperature measurements of the conductance of partially disordered reduced graphene oxide, finding that the data follow a simple crossover scenario. At room temperature, conductance is dominated by two-dimensional (2D) electric field-assisted, thermally-driven (Pollak-Riess) variable-range hop** (VRH) through highly-disordered regions. However, at lower temperatures T, we find a smooth crossover to follow the exp(-E_0/E)^(1/3) field-driven (Shklovskii) 2D VRH conductance behaviour when the electric field E exceeds a specific crossover value E_C (T)_2D = (E_a E_0^(1/3) /3)^(3/4) determined by the scale factors E_0 and E_a for the high-field and intermediate field regimes respectively. Our crossover scenario also accounts well for experimental data reported by other authors for three-dimensional disordered carbon networks, suggesting wide applicability.
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Submitted 3 May, 2013; v1 submitted 1 May, 2013;
originally announced May 2013.
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Dielectric versus magnetic pairing mechanisms in high-temperature cuprate superconductors investigated using Raman scattering
Authors:
B. P. P. Mallett,
T. Wolf,
E. Gilioli,
F. Licci,
G. V. M. Williams,
A. B. Kaiser,
N. Suresh,
N. W. Ashcroft,
J. L. Tallon
Abstract:
We suggest, and demonstrate, a systematic approach to the study of cuprate superconductors, namely, progressive change of ion size in order to systematically alter the interaction strength and other key parameters. R(Ba,Sr)$_2$Cu$_3$O$_y$ (R={La, ... Lu,Y}) is such a system where potentially obscuring structural changes are minimal. We thereby systematically alter both dielectric and magnetic prop…
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We suggest, and demonstrate, a systematic approach to the study of cuprate superconductors, namely, progressive change of ion size in order to systematically alter the interaction strength and other key parameters. R(Ba,Sr)$_2$Cu$_3$O$_y$ (R={La, ... Lu,Y}) is such a system where potentially obscuring structural changes are minimal. We thereby systematically alter both dielectric and magnetic properties. Dielectric fluctuation is characterized by ionic polarizability while magnetic fluctuation is characterized by exchange interactions measurable by Raman scattering. The range of transition temperatures is 70 to 107 K and we find that these correlate only with the dielectric properties, a behavior which persists with external pressure. The ultimate significance may remain to be proven but it highlights the role of dielectric screening in the cuprates and adds support to a previously proposed novel pairing mechanism involving exchange of quantized waves of electronic polarization.
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Submitted 15 November, 2013; v1 submitted 6 November, 2012;
originally announced November 2012.
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Tc is insensitive to magnetic interactions in high-Tc superconductors
Authors:
B. Mallett,
G. V. M. Williams,
A. B. Kaiser,
E. Gilioli,
F. Licci,
T. Wolf,
J. L. Tallon
Abstract:
A quarter of a century after their discovery the mechanism that pairs carriers in the cuprate high-Tc superconductors (HTS) still remains uncertain. Despite this the general consensus is that it is probably magnetic in origin [1] so that the energy scale for the pairing boson is governed by J, the antiferromagnetic exchange interaction. Recent studies using resonant inelastic X-ray scattering stro…
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A quarter of a century after their discovery the mechanism that pairs carriers in the cuprate high-Tc superconductors (HTS) still remains uncertain. Despite this the general consensus is that it is probably magnetic in origin [1] so that the energy scale for the pairing boson is governed by J, the antiferromagnetic exchange interaction. Recent studies using resonant inelastic X-ray scattering strongly support these ideas [2]. Here as a further test we vary J (as measured by two-magnon Raman scattering) by more than 60% by changing ion sizes in the model HTS system LnA2Cu3O7-δ where A=(Ba,Sr) and Ln=(La, Nd, Sm, Eu, Gd, Dy, Yb, Lu). Such changes are often referred to as "internal" pressure. Surprisingly, we find Tcmax anticorrelates with J where internal pressure is the implicit variable. This is the opposite to the effect of external pressure and suggests that J is not the dominant energy scale governing Tcmax.
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Submitted 22 February, 2012;
originally announced February 2012.
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Correlation between resistance fluctuations and temperature dependence of conductivity in graphene
Authors:
Viera Skakalova,
Alan B. Kaiser,
Jai Seung Yoo,
Dirk Obergfell,
Siegmar Roth
Abstract:
The weak temperature dependence of the resistance R(T) of monolayer graphene1-3 indicates an extraordinarily high intrinsic mobility of the charge carriers. Important complications are the presence of mobile scattering centres that strongly modify charge transport, and the presence of strong mesoscopic conductance fluctuations that, in graphene, persist to relatively high temperatures4,5. In thi…
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The weak temperature dependence of the resistance R(T) of monolayer graphene1-3 indicates an extraordinarily high intrinsic mobility of the charge carriers. Important complications are the presence of mobile scattering centres that strongly modify charge transport, and the presence of strong mesoscopic conductance fluctuations that, in graphene, persist to relatively high temperatures4,5. In this Letter, we investigate the surprisingly varied changes in resistance that we find in graphene flakes as temperature is lowered below 70 K. We propose that these changes in R(T) arise from the temperature dependence of the scattered electron wave interference that causes the resistance fluctuations. Using the field effect transistor configuration, we verify this explanation in detail from measurements of R(T) by tuning to different gate voltages corresponding to particular features of the resistance fluctuations. We propose simple expressions that model R(T) at both low and high charge carrier densities.
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Submitted 7 March, 2009;
originally announced March 2009.
