Non volatile photo-switch using a diamond pn junction
Authors:
Cédric Masante,
Martin Kah,
Clément Hébert,
Nicolas Rouger,
Julien Pernot
Abstract:
Ultrawide bandgap semiconductor technologies offer potentially revolutionary advances in the rapidly develo** areas of quantum communication, short wavelength optics, smart energy conversion and biomedical interfaces. These strongly demanding technologies can be partly constructed using conventional devices but new hybrid architectures are needed to overpass current performances and add function…
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Ultrawide bandgap semiconductor technologies offer potentially revolutionary advances in the rapidly develo** areas of quantum communication, short wavelength optics, smart energy conversion and biomedical interfaces. These strongly demanding technologies can be partly constructed using conventional devices but new hybrid architectures are needed to overpass current performances and add functionalities. Here, we propose a new concept based on the specific properties of a diamond pn junction combined with both an electric and optical control of the depletion region. Using this junction as a gate in a junction field effect transistor, we report a proof of concept of a non volatile diamond photo-switch. A diamond pn junction made with nitrogen deep donors in the n-side is demonstrated to be optically activated thanks to visible light. The n-type diamond gate is almost devoid of free carriers in the dark and thus insulating. Illuminating the device renders the standard electrical gate control of the transistor efficient. Without illumination, the device is frozen, kee** a permanent memory of the current state. This new way of operating the device opens numerous possibilities to store and transfer information or energy with applications in the field of electrical aircraft or aerospace electronics, power electronics, bio-electronics and quantum communication.
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Submitted 18 May, 2021;
originally announced May 2021.
