Showing 1–5 of 5 results for author: Kadykov, A M

Many-particle effects in optical transitions from zero-mode Landau levels in HgTe quantum wells

Authors: S. S. Krishtopenko, A. M. Kadykov, S. Gebert, S. Ruffenach, C. Consejo, J. Torres, C. Avogadri, B. Jouault, W. Knap, N. N. Mikhailov, S. A. Dvoretskii, F. Teppe

Abstract: We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photocond… ▽ More We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photoconductivity effect. This is striking evidence that in addition to the already well-documented crystalline and interface asymmetries, electron-electron interactions also have a significant impact on the usual behavior of the optical transitions from zero mode Landau levels. △ Less

Submitted 27 April, 2020; v1 submitted 10 December, 2019; originally announced December 2019.

Comments: 5 pages, 4 figures and supplemental materials

Journal ref: Phys. Rev. B 102, 041404 (2020)

Perspectives of HgTe Topological Insulators for Quantum Hall Metrology

Authors: Ivan Yahniuk, Sergey S. Krishtopenko, Grzegorz Grabecki, Benoit Jouault, Christophe Consejo, Wilfried Desrat, Magdalena Majewicz, Alexander M. Kadykov, Kirill E. Spirin, Vladimir I. Gavrilenko, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Dmytro B. But, Frederic Teppe, Jerzy Wróbel, Grzegorz Cywiński, 1 Sławomir Kret, Tomasz Dietl, Wojciech Knap

Abstract: We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states to… ▽ More We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states together with QHE chiral states degrades the precision of the resistance quantization. By experimental and theoretical studies we demonstrate how one may reach very favorable conditions for the QHE resistance standards: low magnetic fields allowing to use permanent magnets ( B $\leq$ 1.4T) and simultaneously realtively high teperatures (liquid helium, T $\geq$ 1.3K). This way we show that HgTe QW based QHE resistance standards may replace their graphene and GaAs counterparts and pave the way towards large scale fabrication and applications of QHE metrology devices. △ Less

Submitted 17 October, 2018; originally announced October 2018.

Comments: 8 pages, 10 figures

Journal ref: npj Quantum Materials (2019) 4:13

Temperature-induced topological phase transition in HgTe quantum wells

Authors: A. M. Kadykov, S. S. Krishtopenko, B. Jouault, W. Desrat, W. Knap, S. Ruffenach, C. Consejo, J. Torres, S. V. Morozov, N. N. Mikhailov, S. A. Dvoretskii, F. Teppe

Abstract: We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole… ▽ More We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole-like subbands. Their crossing at critical magnetic field $B_c$ is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of $B_c$, we directly extract the critical temperature $T_c$, at which the bulk band-gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed. △ Less

Submitted 26 January, 2018; v1 submitted 18 October, 2017; originally announced October 2017.

Comments: 5 pages + Supplemental Materials; Phys. Rev. Lett. (accepted)

Journal ref: Phys. Rev. Lett. 120, 086401 (2018)

Temperature-driven single-valley Dirac fermions in HgTe quantum wells

Authors: M. Marcinkiewicz, S. Ruffenach, S. S. Krishtopenko, A. M. Kadykov, C. Consejo, D. B. But, W. Desrat, W. Knap, J. Torres, A. V. Ikonnikov, K. E. Spirin, S. V. Morozov, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, F. Teppe

Abstract: We report on temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness $d_c$. Our results, obtained in magnetic fields up to 16 T and temperature range from 2 K to 150 K, clearly indicate a change of the band-gap energy with temperature. The quantum well wider than $d_c$ evidences a temperature-driven transition from topological insulato… ▽ More We report on temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness $d_c$. Our results, obtained in magnetic fields up to 16 T and temperature range from 2 K to 150 K, clearly indicate a change of the band-gap energy with temperature. The quantum well wider than $d_c$ evidences a temperature-driven transition from topological insulator to semiconductor phases. At the critical temperature of 90 K, the merging of inter- and intra-band transitions in weak magnetic fields clearly specifies the formation of gapless state, revealing the appearance of single-valley massless Dirac fermions with velocity of $5.6\times10^5$ m$\times$s$^{-1}$. For both quantum wells, the energies extracted from experimental data are in good agreement with calculations on the basis of the 8-band Kane Hamiltonian with temperature-dependent parameters. △ Less

Submitted 12 July, 2017; v1 submitted 22 February, 2017; originally announced February 2017.

Comments: 5 pages, 3 figures and Supplemental Materials (4 pages)

Journal ref: Phys. Rev. B 96, 035405 (2017)

Temperature-driven massless Kane fermions in HgCdTe crystals: verification of universal velocity and rest-mass description

Authors: F. Teppe, M. Marcinkiewicz, S. S. Krishtopenko, S. Ruffenach, C. Consejo, A. M. Kadykov, W. Desrat, D. But, W. Knap, J. Ludwig, S. Moon, D. Smirnov, M. Orlita, Z. Jiang, S. V. Morozov, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii

Abstract: It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as massless Kane fermions, cannot be described by any other well-known relativistic massless particles. Furthermore, the HgCdTe band structure can be continuously… ▽ More It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as massless Kane fermions, cannot be described by any other well-known relativistic massless particles. Furthermore, the HgCdTe band structure can be continuously tailored by modifying either the cadmium content or temperature. At the critical concentration or temperature, the bandgap, Eg, collapses as the system undergoes a semimetal-to-semiconductor topological phase transition between the inverted and normal alignments. Here, using far-infrared magneto-spectroscopy we explore the continuous evolution of band structure of bulk HgCdTe as temperature is tuned across the topological phase transition. We demonstrate that the rest-mass of the Dirac-like Kane fermions, m changes sign at the critical temperature, while their velocity, c remains constant. The relation Eg = 2mc2 with the universal value of c = (1.07 +- 0.05)10x6 m/s remains valid in a broad range of temperatures and Cd concentrations, indicating a striking universality of the pseudo-relativistic description of the Dirac-like Kane fermions in HgCdTe. △ Less

Submitted 18 February, 2016; originally announced February 2016.

Comments: 15 pages, 6 figures

Journal ref: Nature Communications 7, Article number: 12576 (2016)