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Quantum phase modulation with acoustic cavities and quantum dots
Authors:
Poolad Imany,
Zixuan Wang,
Ryan A. Decrescent,
Robert C. Boutelle,
Corey A. Mcdonald,
Travis Autry,
Samuel Berweger,
Pavel Kabos,
Sae Woo Nam,
Richard P. Mirin,
Kevin L. Silverman
Abstract:
Fast, efficient, and low power modulation of light at microwave frequencies is crucial for chip-scale classical and quantum processing as well as for long-range networks of superconducting quantum processors. A successful approach to bridge the gap between microwave and optical photons has been to use intermediate platforms such as acoustic waves, which can couple efficiently to a variety of quant…
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Fast, efficient, and low power modulation of light at microwave frequencies is crucial for chip-scale classical and quantum processing as well as for long-range networks of superconducting quantum processors. A successful approach to bridge the gap between microwave and optical photons has been to use intermediate platforms such as acoustic waves, which can couple efficiently to a variety of quantum systems. Here, we use gigahertz-frequency focusing surface acoustic wave cavities on GaAs that are piezo-electrically coupled to superconducting circuits and parametrically coupled, via strain, to photons scattered from InAs quantum dots . We demonstrate strong modulation of single photons with a half-wave voltage as low as 44 mV, and subnatural modulation sideband linewidths. These demonstrations pave the way for efficient and low-noise transduction of quantum information between microwave and optical domains.
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Submitted 16 December, 2021;
originally announced December 2021.
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Roadmap on Spin-Wave Computing
Authors:
A. V. Chumak,
P. Kabos,
M. Wu,
C. Abert,
C. Adelmann,
A. Adeyeye,
J. Åkerman,
F. G. Aliev,
A. Anane,
A. Awad,
C. H. Back,
A. Barman,
G. E. W. Bauer,
M. Becherer,
E. N. Beginin,
V. A. S. V. Bittencourt,
Y. M. Blanter,
P. Bortolotti,
I. Boventer,
D. A. Bozhko,
S. A. Bunyaev,
J. J. Carmiggelt,
R. R. Cheenikundil,
F. Ciubotaru,
S. Cotofana
, et al. (91 additional authors not shown)
Abstract:
Magnonics is a field of science that addresses the physical properties of spin waves and utilizes them for data processing. Scalability down to atomic dimensions, operations in the GHz-to-THz frequency range, utilization of nonlinear and nonreciprocal phenomena, and compatibility with CMOS are just a few of many advantages offered by magnons. Although magnonics is still primarily positioned in the…
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Magnonics is a field of science that addresses the physical properties of spin waves and utilizes them for data processing. Scalability down to atomic dimensions, operations in the GHz-to-THz frequency range, utilization of nonlinear and nonreciprocal phenomena, and compatibility with CMOS are just a few of many advantages offered by magnons. Although magnonics is still primarily positioned in the academic domain, the scientific and technological challenges of the field are being extensively investigated, and many proof-of-concept prototypes have already been realized in laboratories. This roadmap is a product of the collective work of many authors that covers versatile spin-wave computing approaches, conceptual building blocks, and underlying physical phenomena. In particular, the roadmap discusses the computation operations with Boolean digital data, unconventional approaches like neuromorphic computing, and the progress towards magnon-based quantum computing. The article is organized as a collection of sub-sections grouped into seven large thematic sections. Each sub-section is prepared by one or a group of authors and concludes with a brief description of the current challenges and the outlook of the further development of the research directions.
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Submitted 30 October, 2021;
originally announced November 2021.
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Spatially Resolved Persistent Photoconductivity in MoS$_2$-WS$_2$ Lateral Heterostructures
Authors:
Samuel Berweger,
Hanyu Zhang,
Prasana K. Sahoo,
Benjamin M. Kupp,
Jeffrey L. Blackburn,
Elisa M. Miller,
T. Mitch Wallis,
Dmitri V. Voronine,
Pavel Kabos,
San**i U. Nanayakkara
Abstract:
The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image spatial variations in photoconductivity in MoS$_2$--WS$_2$ lateral multijunction heterostructures using photon energy-resolved narrowband illumination. We find t…
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The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image spatial variations in photoconductivity in MoS$_2$--WS$_2$ lateral multijunction heterostructures using photon energy-resolved narrowband illumination. We find that the onset of photoconductivity in individual domains corresponds to the optical absorption onset, confirming that the tightly bound excitons in transition metal dichalcogenides can nonetheless dissociate into free carriers. These photogenerated carriers are most likely n-type and are seen to persist for up to days, and informed by finite element modeling we reveal that they can increase the carrier density by up to 200 times. This persistent photoconductivity appears to be dominated by contributions from the multilayer MoS$_2$ domains, and we attribute the flake-wide response in part to charge transfer across the heterointerface. Spatial correlation of our SMM imaging with photoluminescence (PL) map** confirms the strong link between PL peak emission photon energy, PL intensity, and the local accumulated charge. This work reveals the spatially and temporally complex optoelectronic response of these systems and cautions that properties measured during or after illumination may not reflect the true dark state of these materials but rather a metastable charged state.
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Submitted 10 August, 2020;
originally announced August 2020.
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Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors
Authors:
Samuel Berweger,
Gang Qiu,
Yixiu Wang,
Benjamin Pollard,
Kristen L. Genter,
Robert Tyrell-Ead,
T. Mitch Wallis,
Wenzhuo Wu,
Peide D. Ye,
Pavel Kabos
Abstract:
Develo** van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as methods to image and study spatial variations in carrier type and associated conductivity with nanometer spatial resolution. Here we demonstrate the general capability of near-field scanning microwave microscopy (SMM) to…
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Develo** van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as methods to image and study spatial variations in carrier type and associated conductivity with nanometer spatial resolution. Here we demonstrate the general capability of near-field scanning microwave microscopy (SMM) to image and study the local carrier type and associated conductivity in operando by studying ambiploar field effect transistors (FETs) of the 1D vdW material tellurium in 2D form. To quantitatively understand electronic variations across the device, we produce nanometer resolved maps of the local carrier equivalence backgate voltage. We show that the global device conductivity minimum determined from transport measurements does not arise from uniform carrier neutrality, but rather from the continued coexistence of p-type regions at the device edge and n-type regions in the interior of our micron-scale devices. This work both underscores and addresses the need to image and understand spatial variations in the electronic properties of nanoscale devices.
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Submitted 3 November, 2018;
originally announced November 2018.
