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The SpinBus Architecture: Scaling Spin Qubits with Electron Shuttling
Authors:
Matthias Künne,
Alexander Willmes,
Max Oberländer,
Christian Gorjaew,
Julian D. Teske,
Harsh Bhardwaj,
Max Beer,
Eugen Kammerloher,
René Otten,
Inga Seidler,
Ran Xue,
Lars R. Schreiber,
Hendrik Bluhm
Abstract:
Quantum processor architectures must enable scaling to large qubit numbers while providing two-dimensional qubit connectivity and exquisite operation fidelities. For microwave-controlled semiconductor spin qubits, dense arrays have made considerable progress, but are still limited in size by wiring fan-out and exhibit significant crosstalk between qubits. To overcome these limitations, we introduc…
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Quantum processor architectures must enable scaling to large qubit numbers while providing two-dimensional qubit connectivity and exquisite operation fidelities. For microwave-controlled semiconductor spin qubits, dense arrays have made considerable progress, but are still limited in size by wiring fan-out and exhibit significant crosstalk between qubits. To overcome these limitations, we introduce the SpinBus architecture, which uses electron shuttling to connect qubits and features low operating frequencies and enhanced qubit coherence. Device simulations for all relevant operations in the Si/SiGe platform validate the feasibility with established semiconductor patterning technology and operation fidelities exceeding 99.9 %. Control using room temperature instruments can plausibly support at least 144 qubits, but much larger numbers are conceivable with cryogenic control circuits. Building on the theoretical feasibility of high-fidelity spin-coherent electron shuttling as key enabling factor, the SpinBus architecture may be the basis for a spin-based quantum processor that meets the scalability requirements for practical quantum computing.
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Submitted 28 June, 2023;
originally announced June 2023.
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Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications
Authors:
Inga Seidler,
Malte Neul,
Eugen Kammerloher,
Matthias Künne,
Andreas Schmidbauer,
Laura Diebel,
Arne Ludwig,
Julian Ritzmann,
Andreas D. Wieck,
Dominique Bougeard,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools from advanced semiconductor industry need to be adapted for smaller structure sizes and electron numbers. Here, we present a general approach for elect…
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Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools from advanced semiconductor industry need to be adapted for smaller structure sizes and electron numbers. Here, we present a general approach for electrostatically modelling new spin qubit device layouts, considering gate voltages, heterostructures, reservoirs and an applied source-drain bias. Exemplified by a specific potential, we study the influence of each parameter. We verify our model by indirectly probing the potential landscape of two design implementations through transport measurements. We use the simulations to identify critical design areas and optimize for robustness with regard to influence and resolution limits of the fabrication process.
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Submitted 23 March, 2023;
originally announced March 2023.
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Sensing dot with high output swing for scalable baseband readout of spin qubits
Authors:
Eugen Kammerloher,
Andreas Schmidbauer,
Laura Diebel,
Inga Seidler,
Malte Neul,
Matthias Künne,
Arne Ludwig,
Julian Ritzmann,
Andreas Wieck,
Dominique Bougeard,
Lars R. Schreiber,
Hendrik Bluhm
Abstract:
A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal amplification, is the output swing of the charge sensor. We demonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs) specifically designed to provide a significant…
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A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal amplification, is the output swing of the charge sensor. We demonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs) specifically designed to provide a significantly improved response compared to conventional charge sensing dots. Our ASD design features a strongly decoupled drain reservoir from the sensor dot, which mitigates negative feedback effects found in conventional sensors. This results in a boosted output swing of $3\,\text{mV}$, which exceeds the response in the conventional regime of our device by more than ten times. The enhanced output signal paves the way for employing very low-power readout amplifiers in close proximity to the qubit.
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Submitted 4 May, 2023; v1 submitted 28 July, 2021;
originally announced July 2021.
