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Experimental investigation on the effect of temperature on the frequency limit of GaAs-AlGaAs and AlGaN-GaN 2DEG Hall-effect sensors
Authors:
Anand V Lalwani,
Abel John,
Satish Shetty,
Miriam Giparakis,
Kanika Arora,
Avidesh Maharaj,
Gottfried Strasser,
Aaron Maxwell Andrews,
Helmut Koeck,
Alan Mantooth,
Gregory Salamo,
Debbie G Senesky
Abstract:
This follow-on work investigates the effect of temperature on the frequency limit of 2-dimensional electron gas (2DEG) Hall-effect sensors.
This follow-on work investigates the effect of temperature on the frequency limit of 2-dimensional electron gas (2DEG) Hall-effect sensors.
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Submitted 17 February, 2024;
originally announced February 2024.
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Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors
Authors:
Anand Lalwani,
Miriam Giparakis,
Kanika Arora,
Avidesh Maharaj,
Akash Levy,
Gottfried Strasser,
Aaron Maxwell Andrews,
Helmut Köck,
Debbie G. Senesky
Abstract:
In this work, we experimentally investigate the frequency limit of Hall effect sensor designs based on a 2 dimensional electron gas (2DEG) gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) heterostructure. The frequency limit is measured and compared for four GaAs/AlGaAs Hall effect sensor designs where the Ohmic contact length (contact geometry) is varied across the four devices. By varyin…
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In this work, we experimentally investigate the frequency limit of Hall effect sensor designs based on a 2 dimensional electron gas (2DEG) gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) heterostructure. The frequency limit is measured and compared for four GaAs/AlGaAs Hall effect sensor designs where the Ohmic contact length (contact geometry) is varied across the four devices. By varying the geometry, the trade-off in sensitivity and frequency limit is explored and the underlying causes of the frequency limit from the resistance and capacitance perspective is investigated. Current spinning, the traditional method to remove offset noise, imposes a practical frequency limit on Hall effect sensors. The frequency limit of the Hall effect sensor, without current spinning, is significantly higher. Wide-frequency Hall effect sensors can measure currents in power electronics that operate at higher frequencies is one such application.
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Submitted 12 June, 2023;
originally announced June 2023.
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Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors
Authors:
Hannah S. Alpert,
Caitlin A. Chapin,
Karen M. Dowling,
Savannah R. Benbrook,
Helmut Köck,
Udo Ausserlechner,
Debbie G. Senesky
Abstract:
The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576°C. Both devices showed decreasing voltage-scaled magnetic sensitivity at high temperature, declining from 53 to 8.3 mV/V/T for the InAlN/GaN sample and from 89 to 8.5 mV/V/T for the AlGaN/GaN sample, corresponding to the decreasing electron mobility due to…
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The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576°C. Both devices showed decreasing voltage-scaled magnetic sensitivity at high temperature, declining from 53 to 8.3 mV/V/T for the InAlN/GaN sample and from 89 to 8.5 mV/V/T for the AlGaN/GaN sample, corresponding to the decreasing electron mobility due to scattering effects at elevated temperatures. Alternatively, current-scaled sensitivities remained stable over the temperature range, only varying by 13.1% from the mean of 26.3 V/A/T and 10.5% from the mean of 60.2 V/A/T for the InAlN/GaN and AlGaN/GaN samples respectively. This is due to the minimal temperature dependence of the electron sheet density on the 2-dimensional electron gas (2DEG). Both devices showed consistency in their voltage- and current-scaled sensitivity over multiple temperature cycles as well as nearly full recovery when returned to room temperature after thermal cycling. Additionally, an AlGaN/GaN sample held at 576°C for 12 hours also showed nearly full recovery at room temperature, further suggesting that GaN-based Hall-effect sensors are a good candidate for use in high temperature applications.
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Submitted 2 December, 2019;
originally announced December 2019.
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Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-effect Sensors
Authors:
Hannah S. Alpert,
Karen M. Dowling,
Caitlin A. Chapin,
Ananth Saran Yalamarthy,
Savannah R. Benbrook,
Helmut Köck,
Udo Ausserlechner,
Debbie G. Senesky
Abstract:
The current- and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The effect of metal contact lengths on sensitivity and sensor offset was evaluated. Calculations that take into account the shape of the device show that devices with point-like contacts have the…
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The current- and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The effect of metal contact lengths on sensitivity and sensor offset was evaluated. Calculations that take into account the shape of the device show that devices with point-like contacts have the highest current-scaled sensitivity (68.9 V/A/T), while devices with contacts of equal length to their non-contact sides have the highest voltage-scaled sensitivity (86.9 mV/V/T). The sensitivities of the two other devices follow the predicted trends closely. All the devices have offsets less than 20 $μ$T at low supply current operation (< 300 $μ$A) and most remain below 35 $μ$T at higher supply current (up to 1.2 mA). The consistent low offsets across the devices imply that the choice of Hall-effect sensor geometry should mainly depend on whether the device is current-biased or voltage-biased and the frequency at which it will operate. This work demonstrates that GaN Hall-effect sensor performance can be improved by adjusting the geometry of the Hall-effect plate specific to its function (e.g., power electronics, navigation, automotive applications).
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Submitted 3 December, 2018;
originally announced December 2018.
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Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall-effect Plates using Current Spinning
Authors:
Karen M. Dowling,
Hannah S. Alpert,
Ananth Saran Yalamarthy,
Peter F. Satterthwaite,
Sai Kumar,
Helmut Koeck,
Udo Ausserlechner,
Debbie G. Senesky
Abstract:
This letter describes the characterization of a low-offset Hall-effect plate using the AlGaN/GaN two-dimensional electron gas(2DEG). Four-phase current spinning was used to reduce sensor offset voltage to values in the range of 20 nV, which corresponds to a low residual offset of 2.6 micro-Tesla when supplied with low voltages (0.04 to 0.5V). These offsets are 50x smaller than the values previousl…
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This letter describes the characterization of a low-offset Hall-effect plate using the AlGaN/GaN two-dimensional electron gas(2DEG). Four-phase current spinning was used to reduce sensor offset voltage to values in the range of 20 nV, which corresponds to a low residual offset of 2.6 micro-Tesla when supplied with low voltages (0.04 to 0.5V). These offsets are 50x smaller than the values previously reported for GaN Hall-effect plates, and it is on par with state-of-the-art silicon Hall-effect plates. In addition, the offset does not exceed 10 micro-Tesla even at higher supply voltage of 2.34V. The sensor also shows stable current-scaled sensitivity over a wide temperature range of -100C to 200C, with temperature drift of -125 ppm/C. This value is 3x better than state-of-the-art Silicon Hall-effect plates. Additionally, the sensor's voltage sensitivity (57 mV/V/T) is also similar. Because of their low offset values, AlGaN/GaN Hall-effect plates are viable candidates for low-field and high temperature magnetic sensing in monolithic GaN systems used in extreme temperature environments such as power inverter, down-well, combustion, and space applications.
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Submitted 28 December, 2018; v1 submitted 2 December, 2018;
originally announced December 2018.
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Macroscopic Simulation of Isotropic Permanent Magnets
Authors:
Florian Bruckner,
Claas Abert,
Christoph Vogler,
Frank Heinrichs,
Armin Satz,
Udo Ausserlechner,
Gernot Binder,
Helmut Koeck,
Dieter Suess
Abstract:
Accurate simulations of isotropic permanent magnets require to take the magnetization process into account and consider the anisotropic, nonlinear, and hysteretic material behaviour near the saturation configuration. An efficient method for the solution of the magnetostatic Maxwell equations including the description of isotropic permanent magnets is presented. The algorithm can easily be implemen…
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Accurate simulations of isotropic permanent magnets require to take the magnetization process into account and consider the anisotropic, nonlinear, and hysteretic material behaviour near the saturation configuration. An efficient method for the solution of the magnetostatic Maxwell equations including the description of isotropic permanent magnets is presented. The algorithm can easily be implemented on top of existing finite element methods and does not require a full characterization of the hysteresis of the magnetic material. Strayfield measurements of an isotropic permanent magnet and simulation results are in good agreement and highlight the importance of a proper description of the isotropic material.
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Submitted 2 July, 2015;
originally announced July 2015.
