Showing 1–3 of 3 results for author: Jurka, V

Magnetotransport in graphene on silicon side of SiC

Authors: P. Vasek, L. Smrcka, P. Svoboda, V. Jurka, M. Orlita, D. K. Maude, W. Strupinski, R. Stepniewski, R. Yakimova

Abstract: We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of… ▽ More We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before. △ Less

Submitted 24 April, 2013; v1 submitted 2 October, 2012; originally announced October 2012.

Comments: 5 pages, 6 figures, accepted for publication in the "IOP Journal of Physics: Conference series" as a contribution to the proceedings of the 20th International Conference on "High Magnetic Fields in Semiconductor Physics", HMF 20

From laterally modulated two-dimensional electron gas towards artificial graphene

Authors: L. Nadvornik, M. Orlita, N. A. Goncharuk, L. Smrcka, V. Novak, V. Jurka, K. Hruska, Z. Vyborny, Z. R. Wasilewski, M. Potemski, K. Vyborny

Abstract: Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral… ▽ More Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral potential on the two-dimensional electron gas. Using this approach, we found a correlation between parameters of the lateral patterning and the created effective potential and obtain thus insights on how the electronic miniband structure has been tuned. The miniband dispersion was calculated using a simplified model and allowed us to formulate four basic criteria that have to be satisfied to reach graphene-like physics in such systems. △ Less

Submitted 16 December, 2011; v1 submitted 28 April, 2011; originally announced April 2011.

Journal ref: New J. Phys. 14, 053002 (2012)

Magnetoresistance of Si(001) MOSFETs with high concentration of electrons

Authors: L. Smrcka, O. N. Makarovsky, S. G. Schemenchinskii, P. Vasek, V. Jurka

Abstract: We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass oscillations, is tentatively attributed to the occupation of a subband associated with the $E_{0'}$ level. Besides, a strong negative magnetoresistance and nonlin… ▽ More We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass oscillations, is tentatively attributed to the occupation of a subband associated with the $E_{0'}$ level. Besides, a strong negative magnetoresistance and nonlinear field dependence of the Hall resistance accompany the novel oscillations at high carrier concentrations. The heating of the 2D electron layers leads to suppression of the observed anomalies. △ Less

Submitted 12 June, 2003; originally announced June 2003.

Comments: 4 pages, 6 figures, elsart/PHYEAUTH macros; to be presented on the EP2DS-15 Conference in Nara, Japan