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A flexible design platform for Si/SiGe exchange-only qubits with low disorder
Authors:
Wonill Ha,
Sieu D. Ha,
Maxwell D. Choi,
Yan Tang,
Adele E. Schmitz,
Mark P. Levendorf,
Kangmu Lee,
James M. Chappell,
Tower S. Adams,
Daniel R. Hulbert,
Edwin Acuna,
Ramsey S. Noah,
Justine W. Matten,
Michael P. Jura,
Jeffrey A. Wright,
Matthew T. Rakher,
Matthew G. Borselli
Abstract:
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that ar…
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Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlap** gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data.
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Submitted 22 July, 2021;
originally announced July 2021.
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Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
Authors:
Edward H. Chen,
Kate Raach,
Andrew Pan,
Andrey A. Kiselev,
Edwin Acuna,
Jacob Z. Blumoff,
Teresa Brecht,
Maxwell Choi,
Wonill Ha,
Daniel Hulbert,
Michael P. Jura,
Tyler Keating,
Ramsey Noah,
Bo Sun,
Bryan J. Thomas,
Matthew Borselli,
C. A. C. Jackson,
Matthew T. Rakher,
Richard S. Ross
Abstract:
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniq…
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Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniques, easing the extraction of energy spectra in multiple-dot devices. We use this method to measure dozens of valley excited state energies spanning multiple wafers, quantum dots, and orbital states, crucial for evaluating the dependence of valley splitting on quantum well width and other epitaxial conditions. Our results suggest that narrower wells can be beneficial for improving valley splittings, but this effect can be confounded by variations in growth and fabrication conditions. These results underscore the importance of valley splitting measurements for guiding the development of Si qubits.
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Submitted 26 February, 2021; v1 submitted 9 October, 2020;
originally announced October 2020.
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Quantifying error and leakage in an encoded Si/SiGe triple-dot qubit
Authors:
R. W. Andrews,
C. Jones,
M. D. Reed,
A. M. Jones,
S. D. Ha,
M. P. Jura,
J. Kerckhoff,
M. Levendorf,
S. Meenehan,
S. T. Merkel,
A. Smith,
B. Sun,
A. J. Weinstein,
M. T. Rakher,
T. D. Ladd,
M. G. Borselli
Abstract:
Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Though such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes and…
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Quantum computation requires qubits that satisfy often-conflicting criteria, including scalable control and long-lasting coherence. One approach to creating a suitable qubit is to operate in an encoded subspace of several physical qubits. Though such encoded qubits may be particularly susceptible to leakage out of their computational subspace, they can be insensitive to certain noise processes and can also allow logical control with a single type of entangling interaction while maintaining favorable features of the underlying physical system. Here we demonstrate a qubit encoded in a subsystem of three coupled electron spins confined in gated, isotopically enhanced silicon quantum dots. Using a modified "blind" randomized benchmarking protocol that determines both computational and leakage errors, we show that unitary operations have an average total error of 0.35%, with 0.17% of that coming from leakage driven by interactions with substrate nuclear spins. This demonstration utilizes only the voltage-controlled exchange interaction for qubit manipulation and highlights the operational benefits of encoded subsystems, heralding the realization of high-quality encoded multi-qubit operations.
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Submitted 6 December, 2018;
originally announced December 2018.
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Reduced sensitivity to charge noise in semiconductor spin qubits via symmetric operation
Authors:
M. D. Reed,
B. M. Maune,
R. W. Andrews,
M. G. Borselli,
K. Eng,
M. P. Jura,
A. A. Kiselev,
T. D. Ladd,
S. T. Merkel,
I. Milosavljevic,
E. J. Pritchett,
M. T. Rakher,
R. S. Ross,
A. E. Schmitz,
A. Smith,
J. A. Wright,
M. F. Gyure,
A. T. Hunter
Abstract:
We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the charge-state anti-crossings, where the derivative of the exchange energy with respect to gate voltages is minimized. Exchange remains highly tunable by adjusting the tunn…
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We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the charge-state anti-crossings, where the derivative of the exchange energy with respect to gate voltages is minimized. Exchange remains highly tunable by adjusting the tunnel coupling. We find that this method reduces the dephasing effect of charge noise by more than a factor of five in comparison to operation near a charge-state anti-crossing, increasing the number of observable exchange oscillations in our qubit by a similar factor. Performance also improves with exchange rate, favoring fast quantum operations.
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Submitted 21 March, 2016; v1 submitted 5 August, 2015;
originally announced August 2015.
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Spatially probed electron-electron scattering in a two-dimensional electron gas
Authors:
M. P. Jura,
M. Grobis,
M. A. Topinka,
L. N. Pfeiffer,
K. W. West,
D. Goldhaber-Gordon
Abstract:
Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beam's injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the…
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Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beam's injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the SGM tip where it back-scatters electrons increases the differential conductance through the system. This effect is explained by a non-equilibrium distribution of electrons in a localized region of 2DEG near the injection point. Our data indicate that the spatial extent of this highly non-equilibrium distribution is within ~1 micrometer of the injection point. We approximate the non-equilibrium region as having an effective temperature that depends linearly upon injection energy.
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Submitted 30 October, 2010;
originally announced November 2010.
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Electron interferometer formed with a scanning probe tip and quantum point contact
Authors:
M. P. Jura,
M. A. Topinka,
M. Grobis,
L. N. Pfeiffer,
K. W. West,
D. Goldhaber-Gordon
Abstract:
We show an electron interferometer between a quantum point contact (QPC) and a scanning gate microscope (SGM) tip in a two-dimensional electron gas. The QPC and SGM tip act as reflective barriers of a lossy cavity; the conductance through the system thus varies as a function of the distance between the QPC and SGM tip. We characterize how temperature, electron wavelength, cavity length, and reflec…
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We show an electron interferometer between a quantum point contact (QPC) and a scanning gate microscope (SGM) tip in a two-dimensional electron gas. The QPC and SGM tip act as reflective barriers of a lossy cavity; the conductance through the system thus varies as a function of the distance between the QPC and SGM tip. We characterize how temperature, electron wavelength, cavity length, and reflectivity of the QPC barrier affect the interferometer. We report checkerboard interference patterns near the QPC and, when injecting electrons above or below the Fermi energy, effects of dephasing.
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Submitted 19 September, 2010;
originally announced September 2010.
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Unexpected features of branched flow through high-mobility two-dimensional electron gases
Authors:
M. P. Jura,
M. A. Topinka,
L. Urban,
A. Yazdani,
H. Shtrikman,
L. N. Pfeiffer,
K. W. West,
D. Goldhaber-Gordon
Abstract:
GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states, and serve as the basis for fast transistors, research on electrons in nanostructures, and prototypes of quantum-computing schemes. All these uses depend on the extremely low levels of disorder in GaAs 2DEGs, with low-temperature mean free paths ranging from microns to hundreds of microns. Here we study…
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GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states, and serve as the basis for fast transistors, research on electrons in nanostructures, and prototypes of quantum-computing schemes. All these uses depend on the extremely low levels of disorder in GaAs 2DEGs, with low-temperature mean free paths ranging from microns to hundreds of microns. Here we study how disorder affects the spatial structure of electron transport by imaging electron flow in three different GaAs/AlGaAs 2DEGs, whose mobilities range over an order of magnitude. As expected, electrons flow along narrow branches that we find remain straight over a distance roughly proportional to the mean free path. We also observe two unanticipated phenomena in high-mobility samples. In our highest-mobility sample we observe an almost complete absence of sharp impurity or defect scattering, indicated by the complete suppression of quantum coherent interference fringes. Also, branched flow through the chaotic potential of a high-mobility sample remains stable to significant changes to the initial conditions of injected electrons.
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Submitted 19 September, 2010;
originally announced September 2010.
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An off-board quantum point contact as a sensitive detector of cantilever motion
Authors:
M. Poggio,
M. P. Jura,
C. L. Degen,
M. A. Topinka,
H. J. Mamin,
D. Goldhaber-Gordon,
D. Rugar
Abstract:
Recent advances in the fabrication of microelectromechanical systems (MEMS) and their evolution into nanoelectromechanical systems (NEMS) have allowed researchers to measure extremely small forces, masses, and displacements. In particular, researchers have developed position transducers with resolution approaching the uncertainty limit set by quantum mechanics. The achievement of such resolution…
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Recent advances in the fabrication of microelectromechanical systems (MEMS) and their evolution into nanoelectromechanical systems (NEMS) have allowed researchers to measure extremely small forces, masses, and displacements. In particular, researchers have developed position transducers with resolution approaching the uncertainty limit set by quantum mechanics. The achievement of such resolution has implications not only for the detection of quantum behavior in mechanical systems, but also for a variety of other precision experiments including the bounding of deviations from Newtonian gravity at short distances and the measurement of single spins. Here we demonstrate the use of a quantum point contact (QPC) as a sensitive displacement detector capable of sensing the low-temperature thermal motion of a nearby micromechanical cantilever. Advantages of this approach include versatility due to its off-board design, compatibility with nanoscale oscillators, and, with further development, the potential to achieve quantum limited displacement detection.
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Submitted 10 March, 2008;
originally announced March 2008.
