-
Holstein polarons, Rashba-like spin splitting and Ising superconductivity in electron-doped MoSe2
Authors:
Sung Won Jung,
Saumya Mukherjee,
Matthew D. Watson,
Daniil V. Evtushinsky,
Cephise Cacho,
Edoardo Martino,
Helmut Berger,
Timur K. Kim
Abstract:
Interaction between electrons and phonons in solids is a key effect defining physical properties of materials such as electrical and thermal conductivity. In transitional metal dichalcogenides (TMDCs) the electron-phonon coupling results in the creation of polarons, quasiparticles that manifest themselves as discrete features in the electronic spectral function. In this study, we report the format…
▽ More
Interaction between electrons and phonons in solids is a key effect defining physical properties of materials such as electrical and thermal conductivity. In transitional metal dichalcogenides (TMDCs) the electron-phonon coupling results in the creation of polarons, quasiparticles that manifest themselves as discrete features in the electronic spectral function. In this study, we report the formation of polarons at the alkali dosed MoSe2 surface, where Rashba-like spin splitting of the conduction band states is caused by an inversion-symmetry breaking electric field. In addition, we observe the crossover from phonon-like to plasmon-like polaronic spectral features at MoSe2 surface with increasing do**. Our findings support the concept of electron-phonon coupling mediated superconductivity in electron-doped layered TMDC materials, observed using ionic liquid gating technology. Furthermore, the discovered spin-splitting at the Fermi level could offer crucial experimental validation for theoretical models of Ising-type superconductivity in these materials.
△ Less
Submitted 12 June, 2024;
originally announced June 2024.
-
Strong surface termination dependence of the electronic structure of polar superconductor LaFeAsO revealed by nano-ARPES
Authors:
Sung Won Jung,
Luke C. Rhodes,
Matthew D. Watson,
Daniil V. Evtushinsky,
Cephise Cacho,
Saicharan Aswartham,
Rhea Kappenberger,
Sabine Wurmehl,
Bernd Büchner,
Timur K. Kim
Abstract:
The electronic structures of the iron-based superconductors have been intensively studied by using angleresolved photoemission spectroscopy (ARPES). A considerable amount of research has been focused on the LaFeAsO family, showing the highest transition temperatures, where previous ARPES studies have found much larger Fermi surfaces than bulk theoretical calculations would predict. The discrepancy…
▽ More
The electronic structures of the iron-based superconductors have been intensively studied by using angleresolved photoemission spectroscopy (ARPES). A considerable amount of research has been focused on the LaFeAsO family, showing the highest transition temperatures, where previous ARPES studies have found much larger Fermi surfaces than bulk theoretical calculations would predict. The discrepancy has been attributed to the presence of termination-dependent surface states. Here, using photoemission spectroscopy with a sub-micron focused beam spot (nano-ARPES) we have successfully measured the electronic structures of both the LaO and FeAs terminations in LaFeAsO. Our data reveal very different band dispersions and core-level spectra for different surface terminations, showing that previous macro-focus ARPES measurements were incomplete. Our results give direct evidence for the surface-driven electronic structure reconstruction in LaFeAsO, including formation of the termination-dependent surface states at the Fermi level. This new experimental technique, which we have shown to be very powerful when applied to this prototypical compound, can now be used to study various materials with different surface terminations.
△ Less
Submitted 11 August, 2022;
originally announced August 2022.
-
Novel magnetic stoichiometric superconductor EuRbFe4As4
Authors:
T. K. Kim,
K. S. Pervakov,
V. A. Vlasenko,
A. V. Sadakov,
A. S. Usoltsev,
D. V. Evtushinsky,
S. W. Jung,
G. Poelchen,
K. Kummer,
D. Roditchev,
V. S. Stolyarov,
I. A. Golovchanskiy,
D. V. Vyalikh,
V. Borisov,
R. Valenti,
A. Ernst,
S. V. Eremeev,
E. V. Chulkov,
V. M. Pudalov
Abstract:
In the novel stoichiometric iron-based material RbEuFe4As4 superconductivity coexists with a peculiar long-range magnetic order of Eu 4f states; their coexistance is puzzling and represents a challenge for both experiment and theory. Using angle-resolved photoemission spectroscopy, resonant photoemission spectroscopy, Andreev reflection spectroscopy and scanning tunneling spectroscopy we have addr…
▽ More
In the novel stoichiometric iron-based material RbEuFe4As4 superconductivity coexists with a peculiar long-range magnetic order of Eu 4f states; their coexistance is puzzling and represents a challenge for both experiment and theory. Using angle-resolved photoemission spectroscopy, resonant photoemission spectroscopy, Andreev reflection spectroscopy and scanning tunneling spectroscopy we have addressed this puzzle and unambigously shown that Fe- and Eu-derived states are largely decoupled and that superconducting and a long range magnetic orders exist almost independently from each other.
△ Less
Submitted 31 August, 2021;
originally announced August 2021.
-
Observation of Topological Superconductivity in a Stoichiometric Transition Metal Dichalcogenide 2M-WS2
Authors:
Y. W. Li,
H. J. Zheng,
Y. Q. Fang,
D. Q. Zhang,
Y. J. Chen,
C. Chen,
A. J. Liang,
W. J. Shi,
D. Pei,
L. X. Xu,
S. Liu,
J. Pan,
D. H. Lu,
M. Hashimoto,
A. Barinov,
S. W. Jung,
C. Cacho,
M. X. Wang,
Y. He,
L. Fu,
H. J. Zhang,
F. Q. Huang,
L. X. Yang,
Z. K. Liu,
Y. L. Chen
Abstract:
Topological superconductors (TSCs) are unconventional superconductors with bulk superconducting gap and in-gap Majorana states on the boundary that may be used as topological qubits for quantum computation. Despite their importance in both fundamental research and applications, natural TSCs are very rare. Here, combining state of the art synchrotron and laser-based angle-resolved photoemission spe…
▽ More
Topological superconductors (TSCs) are unconventional superconductors with bulk superconducting gap and in-gap Majorana states on the boundary that may be used as topological qubits for quantum computation. Despite their importance in both fundamental research and applications, natural TSCs are very rare. Here, combining state of the art synchrotron and laser-based angle-resolved photoemission spectroscopy, we investigated a stoichiometric transition metal dichalcogenide (TMD), 2M-WS2 with a superconducting transition temperature of 8.8 K (the highest among all TMDs in the natural form up to date) and observed distinctive topological surface states (TSSs). Furthermore, in the superconducting state, we found that the TSSs acquired a nodeless superconducting gap with similar magnitude as that of the bulk states. These discoveries not only evidence 2M-WS2 as an intrinsic TSC without the need of sensitive composition tuning or sophisticated heterostructures fabrication, but also provide an ideal platform for device applications thanks to its van der Waals layered structure.
△ Less
Submitted 14 April, 2021;
originally announced April 2021.
-
Fermiology and electron-phonon coupling in the 2H and 3R polytypes of NbS$\boldsymbol{_2}$
Authors:
Zakariae El Youbi,
Sung Won Jung,
Christine Richter,
Karol Hricovini,
Cephise Cacho,
Matthew D. Watson
Abstract:
We investigate the electronic structure of the 2H and 3R polytypes of NbS$_2$. The Fermi surfaces measured by angle-resolved photoemission spectroscopy show a remarkable difference in size, reflecting a significantly increased band filling in 3R-Nb$_{1+x}$S$_2$ compared to 2H-NbS$_2$, which we attribute to the presence of additional interstitial Nb which act as electron donors. Thus we find that t…
▽ More
We investigate the electronic structure of the 2H and 3R polytypes of NbS$_2$. The Fermi surfaces measured by angle-resolved photoemission spectroscopy show a remarkable difference in size, reflecting a significantly increased band filling in 3R-Nb$_{1+x}$S$_2$ compared to 2H-NbS$_2$, which we attribute to the presence of additional interstitial Nb which act as electron donors. Thus we find that the stoichiometry, rather than the stacking arrangement, is the most important factor in the difference in electronic and physical properties of the two phases. Our high resolution data on the 2H phase shows kinks in the spectral function that are fingerprints of the electron-phonon coupling. However, the strength of the coupling is found to be much larger for the the sections of bands with Nb 4$d_{x^2-y^2,xy}$ character than for the Nb 4$d_{3z^2-r^2}$. Our results provide an experimental framework for interpreting the two-gap superconductivity and "latent" charge density wave in 2H-NbS$_2$.
△ Less
Submitted 30 March, 2021; v1 submitted 23 December, 2020;
originally announced December 2020.
-
A Silicon Beam Tracker
Authors:
J. H. Han,
H. S. Ahn,
J. B. Bae,
H. J. Hyun,
S. W. Jung,
D. H. Kah,
C. H. Kim,
H. J. Kim,
K. C. Kim,
M. H. Lee,
L. Lutz,
A. Malinin,
H. Park,
S. Ryu,
E. S. Seo,
P. Walpole,
J. Wu,
J. H. Yoo,
Y. S. Yoon,
S. Y. Zinn
Abstract:
When testing and calibrating particle detectors in a test beam, accurate tracking information independent of the detector being tested is extremely useful during the offline analysis of the data. A general-purpose Silicon Beam Tracker (SBT) was constructed with an active area of 32.0 x 32.0 mm2 to provide this capability for the beam calibration of the Cosmic Ray Energetics And Mass (CREAM) calori…
▽ More
When testing and calibrating particle detectors in a test beam, accurate tracking information independent of the detector being tested is extremely useful during the offline analysis of the data. A general-purpose Silicon Beam Tracker (SBT) was constructed with an active area of 32.0 x 32.0 mm2 to provide this capability for the beam calibration of the Cosmic Ray Energetics And Mass (CREAM) calorimeter. The tracker consists of two modules, each comprised of two orthogonal layers of 380 μm thick silicon strip sensors. In one module each layer is a 64-channel AC-coupled single-sided silicon strip detector (SSD) with a 0.5 mm pitch. In the other, each layer is a 32-channel DC-coupled single-sided SSD with a 1.0 mm pitch. The signals from the 4 layers are read out using modified CREAM hodoscope front-end electronics with a USB 2.0 interface board to a Linux DAQ PC. In this paper, we present the construction of the SBT, along with its performance in radioactive source tests and in a CERN beam test in October 2006.
△ Less
Submitted 23 September, 2020;
originally announced September 2020.
-
Spectral functions of CVD grown MoS$_2$ monolayers after chemical transfer onto Au surface
Authors:
Sung Won Jung,
Sangyeon Pak,
Sanghyo Lee,
Sonka Reimers,
Saumya Mukherjee,
Pavel Dudin,
Timur K. Kim,
Mattia Cattelan,
Neil Fox,
Sarnjeet S. Dhesi,
Cephise Cacho,
SeungNam Cha
Abstract:
The recent rise of van der Waals (vdW) crystals has opened new prospects for studying versatile and exotic fundamental physics with future device applications such as twistronics. Even though the recent development on Angle-resolved photoemission spectroscopy (ARPES) with Nano-focusing optics, making clean surfaces and interfaces of chemically transferred crystals have been challenging to obtain h…
▽ More
The recent rise of van der Waals (vdW) crystals has opened new prospects for studying versatile and exotic fundamental physics with future device applications such as twistronics. Even though the recent development on Angle-resolved photoemission spectroscopy (ARPES) with Nano-focusing optics, making clean surfaces and interfaces of chemically transferred crystals have been challenging to obtain high-resolution ARPES spectra. Here, we show that by employing nano-ARPES with submicron sized beam and polystyrene-assisted transfer followed by annealing process in ultra-high vacuum environment, remarkably clear ARPES spectral features such as spin-orbit splitting and band renormalization of CVD-grown, monolayered MoS2 can be measured. Our finding paves a way to exploit chemically transferred crystals for measuring high-resolution ARPES spectra to observe exotic quasi-particles in vdW heterostructures.
△ Less
Submitted 6 August, 2020;
originally announced August 2020.
-
When superconductivity does not fear magnetism: Insight into electronic structure of RbEuFe$_{4}$As$_{4}$
Authors:
T. K. Kim,
K. S. Pervakov,
D. V. Evtushinsky,
S. W. Jung,
G. Poelchen,
K. Kummer,
V. A. Vlasenko,
V. M. Pudalov,
D. Roditchev,
V. S. Stolyarov,
D. V. Vyalikh,
V. Borisov,
R. Valentí,
A. Ernst,
S. V. Eremeev,
E. V. Chulkov
Abstract:
In the novel stoichiometric iron-based material RbEuFe$_{4}$As$_{4}$ superconductivity coexists with a peculiar long-range magnetic order of Eu 4f states. Using angle-resolved photoemission spectroscopy, we reveal a complex three dimensional electronic structure and compare it with density functional theory calculations. Multiple superconducting gaps were measured on various sheets of the Fermi su…
▽ More
In the novel stoichiometric iron-based material RbEuFe$_{4}$As$_{4}$ superconductivity coexists with a peculiar long-range magnetic order of Eu 4f states. Using angle-resolved photoemission spectroscopy, we reveal a complex three dimensional electronic structure and compare it with density functional theory calculations. Multiple superconducting gaps were measured on various sheets of the Fermi surface. High resolution resonant photoemission spectroscopy reveals magnetic order of the Eu 4f states deep into the superconducting phase. Both the absolute values and the anisotropy of the superconducting gaps are remarkably similar to the sibling compound without Eu, indicating that Eu magnetism does not affect the pairing of electrons. A complete decoupling between Fe- and Eu-derived states was established from their evolution with temperature, thus unambiguously demonstrating that superconducting and a long range magnetic orders exist independently from each other. The established electronic structure of RbEuFe$_{4}$As$_{4}$ opens opportunities for the future studies of the highly unorthodox electron pairing and phase competition in this family of iron-based superconductors with do**.
△ Less
Submitted 3 August, 2020;
originally announced August 2020.
-
Bulk and surface electronic states in the dosed semimetallic HfTe$\boldsymbol{_2}$
Authors:
Zakariae El Youbi,
Sung Won Jung,
Saumya Mukherjee,
Mauro Fanciulli,
Jakub Schusser,
Olivier Heckmann,
Christine Richter,
Ján Minár,
Karol Hricovini,
Matthew D. Watson,
Cephise Cacho
Abstract:
The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe$_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-…
▽ More
The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe$_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-resolved photoemission spectroscopy (ARPES), we have investigated the electronic structure of this material as a function of Potassium (K) deposition. From the k$_z$ maps, we observe the appearance of 2D dispersive bands after electron dosing, with an increasing sharpness of the bands, consistent with the wavefunction confinement at the topmost layer. In our highest-dosing cases, a monolayer-like electronic structure emerges, presumably as a result of intercalation of the alkali metal. Here, by bringing the topmost valence band below $E_F$, we can directly measure a band overlap of $\sim$ 0.2 eV. However, 3D bulk-like states still contribute to the spectra even after considerable dosing. Our work provides a reference point for the increasingly popular studies of the alkali metal dosing of semimetals using ARPES.
△ Less
Submitted 7 June, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
-
Three-dimensional electronic structure in ferromagnetic $\textrm{Fe}_3\textrm{Sn}_2$ with breathing kagome bilayers
Authors:
Hiroaki Tanaka,
Yuita Fujisawa,
Kenta Kuroda,
Ryo Noguchi,
Shunsuke Sakuragi,
Cédric Bareille,
Barnaby Smith,
Cephise Cacho,
Sung Won Jung,
Takayuki Muro,
Yoshinori Okada,
Takeshi Kondo
Abstract:
A large anomalous Hall effect (AHE) has been observed in ferromagnetic $\textrm{Fe}_3\textrm{Sn}_2$ with breathing kagome bilayers. To understand the underlying mechanism for this, we investigate the electronic structure of $\textrm{Fe}_3\textrm{Sn}_2$ by angle-resolved photoemission spectroscopy (ARPES). In particular, we use both vacuum ultraviolet light (VUV) and soft x ray (SX), which allow su…
▽ More
A large anomalous Hall effect (AHE) has been observed in ferromagnetic $\textrm{Fe}_3\textrm{Sn}_2$ with breathing kagome bilayers. To understand the underlying mechanism for this, we investigate the electronic structure of $\textrm{Fe}_3\textrm{Sn}_2$ by angle-resolved photoemission spectroscopy (ARPES). In particular, we use both vacuum ultraviolet light (VUV) and soft x ray (SX), which allow surface-sensitive and relatively bulk-sensitive measurements, respectively, and distinguish bulk states from surface states, which should be unlikely related to the AHE. While VUV-ARPES observes two-dimensional bands mostly due to surface states, SX-ARPES reveals three-dimensional band dispersions with a periodicity of the rhombohedral unit cell in the bulk. Our data show a good consistency with a theoretical calculation based on density functional theory, suggesting a possibility that $\textrm{Fe}_3\textrm{Sn}_2$ is a magnetic Weyl semimetal.
△ Less
Submitted 5 October, 2020; v1 submitted 24 January, 2020;
originally announced January 2020.
-
Fermi-crossing Type-II Dirac fermions and topological surface states in NiTe2
Authors:
Saumya Mukherjee,
Sung Won Jung,
Sophie F. Weber,
Chunqiang Xu,
Dong Qian,
Xiaofeng Xu,
Pabitra K. Biswas,
Timur K. Kim,
Laurent C. Chapon,
Matthew D. Watson,
Jeffrey B. Neaton,
Cephise Cacho
Abstract:
Transition-metal dichalcogenides (TMDs) offer an ideal platform to experimentally realize Dirac fermions. However, typically these exotic quasiparticles are located far away from the Fermi level, limiting the contribution of Dirac-like carriers to the transport properties. Here we show that NiTe2 hosts both bulk Type-II Dirac points and topological surface states. The underlying mechanism is share…
▽ More
Transition-metal dichalcogenides (TMDs) offer an ideal platform to experimentally realize Dirac fermions. However, typically these exotic quasiparticles are located far away from the Fermi level, limiting the contribution of Dirac-like carriers to the transport properties. Here we show that NiTe2 hosts both bulk Type-II Dirac points and topological surface states. The underlying mechanism is shared with other TMDs and based on the generic topological character of the Te p-orbital manifold. However, unique to NiTe2, a significant contribution of Ni d orbital states shifts the energy of the Type-II Dirac point close to the Fermi level. In addition, one of the topological surface states intersects the Fermi energy and exhibits a remarkably large spin splitting of 120 meV. Our results establish NiTe2 as an exciting candidate for next-generation spintronics devices.
△ Less
Submitted 18 December, 2019;
originally announced December 2019.
-
Persistent gapless surface states in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator
Authors:
L. X. Xu,
Y. H. Mao,
H. Y. Wang,
J. H. Li,
Y. J. Chen,
Y. Y. Y. Xia,
Y. W. Li,
J. Zhang,
H. J. Zheng,
K. Huang,
C. F. Zhang,
S. T. Cui,
A. J. Liang,
W. Xia,
H. Su,
S. W. Jung,
C. Cacho,
M. X. Wang,
G. Li,
Y. Xu,
Y. F. Guo,
L. X. Yang,
Z. K. Liu,
Y. L. Chen
Abstract:
Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM co…
▽ More
Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound MnBi4Te7 where Bi2Te3 and MnBi2Te4 layers alternate to form a superlattice. Using spatial- and angle-resolved photoemission spectroscopy, we identified ubiquitous (albeit termination dependent) topological electronic structures from both Bi2Te3 and MnBi2Te4 terminations. Unexpectedly, while the bulk bands show strong temperature dependence correlated with the AFM transition, the topological surface states show little temperature dependence and remain gapless across the AFM transition. The detailed electronic structure of MnBi4Te7 and its temperature evolution, together with the results of its sister compound MnBi2Te4, will not only help understand the exotic properties of this family of magnetic TQMs, but also guide the design for possible applications.
△ Less
Submitted 24 October, 2019;
originally announced October 2019.
-
Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4
Authors:
Y. J. Chen,
L. X. Xu,
J. H. Li,
Y. W. Li,
C. F. Zhang,
H. Li,
Y. Wu,
A. J. Liang,
C. Chen,
S. W. Jung,
C. Cacho,
H. Y. Wang,
Y. H. Mao,
S. Liu,
M. X. Wang,
Y. F. Guo,
Y. Xu,
Z. K. Liu,
L. X. Yang,
Y. L. Chen
Abstract:
Topological quantum materials coupled with magnetism can provide a platform for realizing rich exotic physical phenomena, including quantum anomalous Hall effect, axion electrodynamics and Majorana fermions. However, these unusual effects typically require extreme experimental conditions such as ultralow temperature or sophisticate material growth and fabrication. Recently, new intrinsic magnetic…
▽ More
Topological quantum materials coupled with magnetism can provide a platform for realizing rich exotic physical phenomena, including quantum anomalous Hall effect, axion electrodynamics and Majorana fermions. However, these unusual effects typically require extreme experimental conditions such as ultralow temperature or sophisticate material growth and fabrication. Recently, new intrinsic magnetic topological insulators were proposed in MnBi2Te4-family compounds - on which rich topological effects could be realized under much relaxed experimental conditions. However, despite the exciting progresses, the detailed electronic structures observed in this family of compounds remain controversial up to date. Here, combining the use of synchrotron and laser light sources, we carried out comprehensive and high resolution angle-resolved photoemission spectroscopy studies on MnBi2Te4, and clearly identified its topological electronic structures including the characteristic gapless topological surface states. In addition, the temperature evolution of the energy bands clearly reveals their interplay with the magnetic phase transition by showing interesting differences for the bulk and surface states, respectively. The identification of the detailed electronic structures of MnBi2Te4 will not only help understand its exotic properties, but also pave the way for the design and realization of novel phenomena and applications.
△ Less
Submitted 11 July, 2019;
originally announced July 2019.
-
Holstein polaron in a valley-degenerate two-dimensional semiconductor
Authors:
Mingu Kang,
Sung Won Jung,
Woo Jong Shin,
Yeongsup Sohn,
Sae Hee Ryu,
Timur K. Kim,
Moritz Hoesch,
Keun Su Kim
Abstract:
Two-dimensional (2D) crystals have emerged as a class of materials with tuneable carrier density. Carrier do** to 2D semiconductors can be used to modulate manybody interactions and to explore novel composite particles. Holstein polaron is a small composite particle of an electron carrying a cloud of self-induced lattice deformation (or phonons), which has been proposed to play a key role in hig…
▽ More
Two-dimensional (2D) crystals have emerged as a class of materials with tuneable carrier density. Carrier do** to 2D semiconductors can be used to modulate manybody interactions and to explore novel composite particles. Holstein polaron is a small composite particle of an electron carrying a cloud of self-induced lattice deformation (or phonons), which has been proposed to play a key role in high-temperature superconductivity and carrier mobility in devices. Here, we report the discovery of Holstein polarons in a surface-doped layered semiconductor, MoS2, where a puzzling 2D superconducting dome with the critical temperature of 12 K was found recently. Using a high-resolution band map** of charge carriers, we found strong band renormalizations collectively identified as a hitherto unobserved spectral function of Holstein polarons. The unexpected short-range nature of electron-phonon (e-ph) coupling in MoS2 can be explained by its valley degeneracy that enables strong intervalley coupling mediated by acoustic phonons. The coupling strength is found to gradually increase along the superconducting dome up to the intermediate regime, suggesting bipolaronic pairing in 2D superconductivity.
△ Less
Submitted 28 May, 2018;
originally announced May 2018.
-
Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides
Authors:
Mingu Kang,
Beomyoung Kim,
Sae Hee Ryu,
Sung Won Jung,
Jimin Kim,
Luca Moreschini,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Keun Su Kim
Abstract:
Two-dimensional (2D) van-der-Waals semiconductors have emerged as a class of materials with promising device characteristics owing to the intrinsic bandgap. For realistic applications, the ideal is to modify the bandgap in a controlled manner by a mechanism that can be generally applied to this class of materials. Here, we report the observation of a universally tunable bandgap in the family of bu…
▽ More
Two-dimensional (2D) van-der-Waals semiconductors have emerged as a class of materials with promising device characteristics owing to the intrinsic bandgap. For realistic applications, the ideal is to modify the bandgap in a controlled manner by a mechanism that can be generally applied to this class of materials. Here, we report the observation of a universally tunable bandgap in the family of bulk 2H transition metal dichalcogenides (TMDs) by in situ surface do** of Rb atoms. A series of angle-resolved photoemission spectra unexceptionally shows that the bandgap of TMDs at the zone corners is modulated in the range of 0.8 ~ 2.0 eV, which covers a wide spectral range from visible to near infrared, with a tendency from indirect to direct bandgap. A key clue to understand the mechanism of this bandgap engineering is provided by the spectroscopic signature of symmetry breaking and resultant spin splitting, which can be explained by the formation of 2D electric dipole layers within the surface bilayer of TMDs. Our results establish the surface Stark effect as a universal mechanism of bandgap engineering based on the strong 2D nature of van-der-Waals semiconductors.
△ Less
Submitted 30 November, 2017;
originally announced November 2017.
-
Two-Dimensional Dirac Fermions Protected by Space-Time Inversion Symmetry in Black Phosphorus
Authors:
Jimin Kim,
Seung Su Baik,
Sung Won Jung,
Yeongsup Sohn,
Sae Hee Ryu,
Hyoung Joon Choi,
Bohm-Jung Yang,
Keun Su Kim
Abstract:
We report the realization of novel symmetry-protected Dirac fermions in a surface-doped two-dimensional (2D) semiconductor, black phosphorus. The widely tunable band gap of black phosphorus by the surface Stark effect is employed to achieve a surprisingly large band inversion up to ~0.6 eV. High-resolution angle-resolved photoemission spectra directly reveal the pair creation of Dirac points and t…
▽ More
We report the realization of novel symmetry-protected Dirac fermions in a surface-doped two-dimensional (2D) semiconductor, black phosphorus. The widely tunable band gap of black phosphorus by the surface Stark effect is employed to achieve a surprisingly large band inversion up to ~0.6 eV. High-resolution angle-resolved photoemission spectra directly reveal the pair creation of Dirac points and their moving along the axis of the glide-mirror symmetry. Unlike graphene, the Dirac point of black phosphorus is stable, as protected by spacetime inversion symmetry, even in the presence of spin-orbit coupling. Our results establish black phosphorus in the inverted regime as a simple model system of 2D symmetry-protected (topological) Dirac semimetals, offering an unprecedented opportunity for the discovery of 2D Weyl semimetals.
△ Less
Submitted 30 November, 2017;
originally announced November 2017.
-
Nitrogen do** of carbon nanoelectrodes for enhanced control of DNA translocation dynamics
Authors:
Sang Won Jung,
Han Seul Kim,
Art E. Cho,
Yong-Hoon Kim
Abstract:
Controlling the dynamics of DNA translocation is a central issue in the emerging nanopore-based DNA sequencing. To address the potential of heteroatom do** of carbon nanostructures to achieve this goal, herein we carry out atomistic molecular dynamics simulations for single-stranded DNAs translocating between two pristine or doped carbon nanotube (CNT) electrodes. Specifically, we consider the s…
▽ More
Controlling the dynamics of DNA translocation is a central issue in the emerging nanopore-based DNA sequencing. To address the potential of heteroatom do** of carbon nanostructures to achieve this goal, herein we carry out atomistic molecular dynamics simulations for single-stranded DNAs translocating between two pristine or doped carbon nanotube (CNT) electrodes. Specifically, we consider the substitutional nitrogen do** of capped CNT (capCNT) electrodes and perform two types of molecular dynamics simulations for the entrapped and translocating single-stranded DNAs. We find that the substitutional nitrogen do** of capCNTs stabilizes the edge-on nucleobase configurations rather than the original face-on ones and slows down the DNA translocation speed by establishing hydrogen bonds between the N dopant atoms and nucleobases. Due to the enhanced interactions between DNAs and N-doped capCNTs, the duration time of nucleobases within the nanogap was extended by up to ~ 290 % and the fluctuation of the nucleobases was reduced by up to ~ 70 %. Given the possibility to be combined with extrinsic light or gate voltage modulation methods, the current work demonstrates that the substitutional nitrogen do** is a promising direction for the control of DNA translocation dynamics through a nanopore or nanogap based of carbon nanomaterials.
△ Less
Submitted 23 August, 2017;
originally announced August 2017.
-
Self-Assembled Nanowires with Giant Rashba-Type Band Splitting
Authors:
Jewook Park,
Sung Won Jung,
Min-Cherl Jung,
Hiroyuki Yamane,
Nobuhiro Kosugi,
Han Woong Yeom
Abstract:
We investigated Pt-induced nanowires on the Si(110) surface using scanning tunneling microscopy (STM) and angle-resolved photoemission (ARP). High resolution STM images show a well-ordered nanowire array of 1.6 nm width and 2.7 nm separation. ARP reveals fully occupied one dimensional (1D) bands with a Rashba-type split dispersion. Local dI/dV spectra further indicate well confined 1D electron cha…
▽ More
We investigated Pt-induced nanowires on the Si(110) surface using scanning tunneling microscopy (STM) and angle-resolved photoemission (ARP). High resolution STM images show a well-ordered nanowire array of 1.6 nm width and 2.7 nm separation. ARP reveals fully occupied one dimensional (1D) bands with a Rashba-type split dispersion. Local dI/dV spectra further indicate well confined 1D electron channels on the nanowires, whose density of states characteristics are consistent with the Rashba-type band splitting. The observed energy and momentum splitting of the bands are among the largest ever reported for Rashba systems, suggesting the Pt-Si nanowire as a unique 1D giant Rashba system. This self-assembled nanowire can be exploited for silicon-based spintronics devices as well as the quest for Majorana Fermions.
△ Less
Submitted 10 January, 2013;
originally announced January 2013.
-
Limits on WIMP-nucleon interactions with CsI(Tl) crystal detectors
Authors:
H. S. Lee,
H. C. Bhang,
J. H. Choi,
H. Dao,
I. S. Hahn,
M. J. Hwang,
S. W. Jung,
W. G. Kang,
D. W. Kim,
H. J. Kim,
S. C. Kim,
S. K. Kim,
Y. D. Kim,
J. W. Kwak,
Y. J. Kwon,
J. Lee,
J. H. Lee,
J. I. Lee,
M. J. Lee,
S. J. Lee,
J. Li,
X. Li,
Y. J. Li,
S. S. Myung,
S. Ryu
, et al. (3 additional authors not shown)
Abstract:
The Korea Invisible Mass Search(KIMS) experiment presents new limits on WIMP-nucleon cross section using the data from an exposure of 3409 kgd taken with low background CsI(Tl) crystals at Yangyang underground laboratory. The most stringent limit on the spin dependent interaction for pure proton case is obtained. The DAMA signal region for both spin independent and spin dependent interactions fo…
▽ More
The Korea Invisible Mass Search(KIMS) experiment presents new limits on WIMP-nucleon cross section using the data from an exposure of 3409 kgd taken with low background CsI(Tl) crystals at Yangyang underground laboratory. The most stringent limit on the spin dependent interaction for pure proton case is obtained. The DAMA signal region for both spin independent and spin dependent interactions for the WIMP mass higher than 20 GeV/c^2are excluded by the single experiment with crystal scintillators.
△ Less
Submitted 14 August, 2007; v1 submitted 3 April, 2007;
originally announced April 2007.
-
Background charge fluctuation in a GaAs quantum dot device
Authors:
S. W. Jung,
T. Fujisawa,
Y. H. Jeong,
Y. Hirayama
Abstract:
We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and tunneling barriers. The estimated potential fluctuation increases almost linearly with temperature, which is consistent with a simple model of the 1/f noise. We f…
▽ More
We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and tunneling barriers. The estimated potential fluctuation increases almost linearly with temperature, which is consistent with a simple model of the 1/f noise. We find that the fluctuation increases very slightly when electrons are injected into excited states of the quantum dot.
△ Less
Submitted 9 July, 2004;
originally announced July 2004.