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A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
Authors:
Patrick Quach,
Arnaud Jollivet,
Andrey Babichev,
Nathalie Isac,
Martina Morassi,
Aristide Lemaitre,
Pavel Yunin,
Eric Frayssinet,
Philippe de Mierry,
Mathieu Jeannin,
Adel Bousseksou,
Raffaele Colombelli,
Maria Tchernycheva,
Yvon Cordier,
François Julien
Abstract:
We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride…
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We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride material. The detector exhibits a peak photocurrent at 5.7 THz (23.6 meV) with a responsivity of 0.1 mA/W at 10 K under surface normal irradiation through a 10 um period grating. The photocurrent persists up to 20 K.
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Submitted 14 April, 2022;
originally announced April 2022.
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Intersubband polarons in oxides
Authors:
M. Montes Bajo,
J. Tamayo-Arriola,
M. Hugues,
J. M. Ulloa,
N. Le Biavan,
R. Peretti,
F. H. Julien,
J. Faist,
J. M. Chauveau,
A. Hierro
Abstract:
Intersubband (ISB) polarons result from the interaction of an ISB transition and the longitudinal optical (LO) phonons in a semiconductor quantum well (QW). Their observation requires a very dense two dimensional electron gas (2DEG) in the QW and a polar or highly ionic semiconductor. Here we show that in ZnO/MgZnO QWs the strength of such a coupling can be as high as 1.5 times the LO-phonon frequ…
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Intersubband (ISB) polarons result from the interaction of an ISB transition and the longitudinal optical (LO) phonons in a semiconductor quantum well (QW). Their observation requires a very dense two dimensional electron gas (2DEG) in the QW and a polar or highly ionic semiconductor. Here we show that in ZnO/MgZnO QWs the strength of such a coupling can be as high as 1.5 times the LO-phonon frequency due to the very dense 2DEG achieved and the large difference between the static and high-frequency dielectric constants in ZnO. The ISB polaron is observed optically in multiple QW structures with 2DEG densities ranging from $5\times 10^{12}$ to $5\times 10^{13}$ cm$^{-2}$, where an unprecedented regime is reached in which the frequency of the upper ISB polaron branch is three times larger than that of the bare ISB transition. This study opens new prospects to the exploitation of oxides in phenomena happening in the ultrastrong coupling regime.
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Submitted 22 March, 2017;
originally announced March 2017.
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Nanometre scale monitoring of the quantum confined stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires
Authors:
L. F. Zagonel,
L. H. G. Tizei,
G. Z. Vitiello,
G. Jacopin,
L. Rigutti,
M. Tchernycheva,
F. H. Julien,
R. Songmuang,
T. Ostasevicius,
F. de la Peña,
C. Ducati,
P. A Midgley,
M. Kociak
Abstract:
We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN Quantum Disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spannin…
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We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN Quantum Disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over 3 orders of magnitude, strong non-linearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (size, position along the NW and shell thickness). For thick QDisks (>4nm), the QDisk emission energy is observed to blue-shift with the increase of the emission intensity. This is interpreted as a consequence of the increase of carriers density excited by the incident electron beam inside the QDisks, which screens the internal electric field and thus reduces the quantum confined Stark effect (QCSE) present in these QDisks. For thinner QDisks (<3 nm), the blue-shift is almost absent in agreement with the negligible QCSE at such sizes. For QDisks of intermediate sizes there exists a current threshold above which the energy shifts, marking the transition from unscreened to partially screened QCSE. From the threshold value we estimate the lifetime in the unscreened regime. These observations suggest that, counterintuitively, electrons of high energy can behave ultimately as single electron-hole pair generators. In addition, when we increase the current from 1 pA to 10 pA the light emission efficiency drops by more than one order of magnitude. This reduction of the emission efficiency is a manifestation of the efficiency droop as observed in nitride-based 2D light emitting diodes, a phenomenon tentatively attributed to the Auger effect.
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Submitted 24 May, 2016;
originally announced May 2016.
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Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure
Authors:
Luiz Fernando Zagonel,
Stefano Mazzucco,
Marcel Tencé,
Katia March,
Romain Bernard,
Benoît Laslier,
Gwénolé Jacopin,
Maria Tchernycheva,
Lorenzo Rigutti,
Francois H. Julien,
Rudeesun Songmuang,
Mathieu Kociak
Abstract:
We report the spectral imaging in the UV to visible range with nanometer scale resolution of closely packed GaN/AlN quantum disks in individual nanowires using an improved custom-made cathodoluminescence system. We demonstrate the possibility to measure full spectral features of individual quantum emitters as small as 1 nm and separated from each other by only a few nanometers and the ability to c…
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We report the spectral imaging in the UV to visible range with nanometer scale resolution of closely packed GaN/AlN quantum disks in individual nanowires using an improved custom-made cathodoluminescence system. We demonstrate the possibility to measure full spectral features of individual quantum emitters as small as 1 nm and separated from each other by only a few nanometers and the ability to correlate their optical properties to their size, measured with atomic resolution. The direct correlation between the quantum disk size and emission wavelength provides evidence of the quantum confined Stark effect leading to an emission below the bulk GaN band gap for disks thicker than 2.6 nm. With the help of simulations, we show that the internal electric field in the studied quantum disks is smaller than what is expected in the quantum well case. We show evidence of a clear dispersion of the emission wavelengths of different quantum disks of identical size but different positions along the wire. This dispersion is systematically correlated to a change of the diameter of the AlN shell coating the wire and is thus attributed to the related strain variations along the wire. The present work opens the way both to fundamental studies of quantum confinement in closely packed quantum emitters and to characterizations of optoelectronic devices presenting carrier localization on the nanometer scale.
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Submitted 5 September, 2012;
originally announced September 2012.
