Highly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states
Authors:
P. Noël,
C. Thomas,
Y. Fu,
L. Vila,
B. Haas,
P. H. Jouneau,
S. Gambarelli,
T. Meunier,
P. Ballet,
J. P. Attané
Abstract:
We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pum** experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the…
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We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pum** experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the HgTe and NiFe layers. These measurements, associated to the temperature dependence of the resistivity, allows to ascribe these high conversion rates to the spin momentum locking property of HgTe surface states.
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Submitted 17 August, 2017;
originally announced August 2017.
Revealing topological Dirac fermions at the surface of strained HgTe thin films via Quantum Hall transport spectroscopy
Authors:
C. Thomas,
O. Crauste,
B. Haas,
P. H. Jouneau,
C. Bäuerle,
L. P. Lévy,
E. Orignac,
D. Carpentier,
P. Ballet,
T. Meunier
Abstract:
We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states.…
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We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states. This study provides new insights in the quantum Hall effect of topological insulator (TI) slabs, in the cross-over regime between two- and three-dimensional TIs, and in the relevance of thin TI films to explore novel circuit functionalities in spintronics and quantum nanoelectronics.
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Submitted 28 April, 2017;
originally announced April 2017.