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Superfluid response of two-dimensional filamentary superconductors
Authors:
Giulia Venditti,
Ilaria Maccari,
Alexis Jouan,
Gyanendra Singh,
Ramesh C. Budhani,
Cheryl Feuillet-Palma,
Jérôme Lesueur,
Nicolas Bergeal,
Sergio Caprara,
Marco Grilli
Abstract:
Different classes of low-dimensional superconducting systems exhibit an inhomogeneous filamentary superconducting condensate whose macroscopic coherence still needs to be fully investigated and understood. Here we present a thorough analysis of the superfluid response of a prototypical filamentary superconductor embedded in a {two-dimensional} metallic matrix. By map** the system into an exactly…
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Different classes of low-dimensional superconducting systems exhibit an inhomogeneous filamentary superconducting condensate whose macroscopic coherence still needs to be fully investigated and understood. Here we present a thorough analysis of the superfluid response of a prototypical filamentary superconductor embedded in a {two-dimensional} metallic matrix. By map** the system into an exactly solvable random impedance network, we show how the dissipative (reactive) response of the system non-trivially depends on both the macroscopic and microscopic characteristics of the metallic (superconducting) fraction. We compare our calculations with resonant-microwave transport measurements performed on LaAlO$_3$/SrTiO$_3$ heterostructures over an extended range of temperatures and carrier densities finding that the filamentary character of superconductivity accounts for unusual peculiar features of the experimental data.
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Submitted 14 April, 2023;
originally announced April 2023.
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Josephson Junctions Via Anodization of Epitaxial Al on an InAs Heterostructure
Authors:
A. Jouan,
J. D. S. Witt,
G. C. Gardner,
C. Thomas,
T. Lindemann,
S. Gronin,
M. J. Manfra,
D. J. Reilly
Abstract:
We combine electron beam lithography and masked anodization of epitaxial aluminium to define tunnel junctions via selective oxidation, alleviating the need for wet-etch processing or direct deposition of dielectric materials. Applying this technique to define Josephson junctions in proximity induced superconducting Al-InAs heterostructures, we observe multiple Andreev reflections in transport expe…
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We combine electron beam lithography and masked anodization of epitaxial aluminium to define tunnel junctions via selective oxidation, alleviating the need for wet-etch processing or direct deposition of dielectric materials. Applying this technique to define Josephson junctions in proximity induced superconducting Al-InAs heterostructures, we observe multiple Andreev reflections in transport experiments, indicative of a high quality junction. We further compare the mobility and density of Hall-bars defined via wet etching and anodization. These results may find utility in uncovering new fabrication approaches to junction-based qubit platforms.
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Submitted 23 May, 2021;
originally announced May 2021.
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Origin of the dome-shaped superconducting phase diagram in $\mathrm{SrTiO}_3$-based interfaces
Authors:
A. Jouan,
S. Hurand,
G. Singh,
E. Lesne,
A. Barthélémy,
M. Bibes,
C. Ulysse,
G. Saiz,
C. Feuillet-Palma,
J. Lesueur,
N. Bergeal
Abstract:
A dome-shaped phase diagram of superconducting critical temperature upon do** is often considered as a hallmark of unconventional superconductors. This behavior, observed in two-dimensional electron gases in $\mathrm{SrTiO}_3$-based interfaces whose electronic density is controlled by field effect, has not been explained unambiguously yet. Here, we elaborate a generic scenario for the supercondu…
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A dome-shaped phase diagram of superconducting critical temperature upon do** is often considered as a hallmark of unconventional superconductors. This behavior, observed in two-dimensional electron gases in $\mathrm{SrTiO}_3$-based interfaces whose electronic density is controlled by field effect, has not been explained unambiguously yet. Here, we elaborate a generic scenario for the superconducting phase diagram of these oxide interfaces based on Schrödinger-Poisson numerical simulations of the quantum well and transport experiments on a double-gate field-effect device. We propose that the optimal do** point of maximum $T_c$ marks the transition between a single-band and a fragile two-gap s$\pm$-wave superconducting state involving $t_{2g}$ bands of different orbital character. At the optimal do** point, we predict and observe experimentally a bifurcation in the dependence of $T_c$ on the carrier density, which is controlled by the details of the do** execution. Where applying a back-gate voltage triggers the filling of a high-energy $d_\mathrm{xy}$ subband and initiates the overdoped regime, do** with a top-gate delays the filling of the subband and maintains the 2-DEG in the single-band superconducting state of higher $T_c$.
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Submitted 16 April, 2021;
originally announced April 2021.
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Repairing the Surface of InAs-based Topological Heterostructures
Authors:
S. J. Pauka,
J. D. S. Witt,
C. N. Allen,
B. Harlech-Jones,
A. Jouan,
G. C. Gardner,
S. Gronin,
T. Wang,
C. Thomas,
M. J. Manfra,
D. J. Reilly,
M. C. Cassidy
Abstract:
Candidate systems for topologically-protected qubits include two-dimensional electron gases (2DEGs) based on heterostructures exhibiting a strong spin-orbit interaction (SOI) and superconductivity via the proximity effect. For InAs- or InSb-based materials, the need to form shallow quantum wells to create a hard-gapped $p$-wave superconducting state often subjects them to fabrication-induced damag…
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Candidate systems for topologically-protected qubits include two-dimensional electron gases (2DEGs) based on heterostructures exhibiting a strong spin-orbit interaction (SOI) and superconductivity via the proximity effect. For InAs- or InSb-based materials, the need to form shallow quantum wells to create a hard-gapped $p$-wave superconducting state often subjects them to fabrication-induced damage, limiting their mobility. Here we examine scattering mechanisms in processed InAs 2DEG quantum wells and demonstrate a means of increasing their mobility via repairing the semiconductor-dielectric interface. Passivation of charged impurity states with an argon-hydrogen plasma results in a significant increase in the measured mobility and reduction in its variance relative to untreated samples, up to 45300 cm$^2$/(V s) in a 10 nm deep quantum well.
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Submitted 23 August, 2019;
originally announced August 2019.
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Quantized conductance in a one-dimensional ballistic oxide nanodevice
Authors:
A. Jouan,
G. Singh,
E. Lesne,
D. C. Vaz,
M. Bibes,
A. Barthélémy,
C. Ulysse,
D. Stornaiuolo,
M. Salluzzo,
S. Hurand,
J. Lesueur,
C. Feuillet-Palma,
N. Bergeal
Abstract:
Electric-field effect control of two-dimensional electron gases (2-DEG) has enabled the exploration of nanoscale electron quantum transport in semiconductors. Beyond these classical materials, transition metal-oxide-based structures have d-electronic states favoring the emergence of novel quantum orders absent in conventional semiconductors. In this context, the LaAlO3/SrTiO3 interface that combin…
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Electric-field effect control of two-dimensional electron gases (2-DEG) has enabled the exploration of nanoscale electron quantum transport in semiconductors. Beyond these classical materials, transition metal-oxide-based structures have d-electronic states favoring the emergence of novel quantum orders absent in conventional semiconductors. In this context, the LaAlO3/SrTiO3 interface that combines gate-tunable superconductivity and sizeable spin-orbit coupling is emerging as a promising platform to realize topological superconductivity. However, the fabrication of nanodevices in which the electronic properties of this oxide interface can be controlled at the nanoscale by field-effect remains a scientific and technological challenge. Here, we demonstrate the quantization of conductance in a ballistic quantum point contact (QPC), formed by electrostatic confinement of the LaAlO3/SrTiO3 2-DEG with a split-gate. Through finite source-drain voltage, we perform a comprehensive spectroscopic investigation of the 3d energy levels inside the QPC, which can be regarded as a spectrometer able to probe Majorana states in an oxide 2-DEG.
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Submitted 28 March, 2019;
originally announced March 2019.
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Dispersive Gate Sensing the Quantum Capacitance of a Point Contact
Authors:
M. C. Jarratt,
A. Jouan,
A. C. Mahoney,
S. J. Waddy,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to the open regime, where many electrons are transported via partially- or fully-transmitting quantum modes. Comparing DGS with conventional transport shows that t…
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The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to the open regime, where many electrons are transported via partially- or fully-transmitting quantum modes. Comparing DGS with conventional transport shows that the technique can resolve the Van Hove singularities of a one-dimensional ballistic system, and also probe aspects of the potential landscape that are not easily accessed with dc transport. Beyond readout, these results suggest that gate-sensing can also be of use in tuning-up qubits or probing the charge configuration of open quantum devices in the regime where electrons are delocalized.
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Submitted 18 March, 2019;
originally announced March 2019.
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Gate-based single-shot readout of spins in silicon
Authors:
A. West,
B. Hensen,
A. Jouan,
T. Tanttu,
C. H. Yang,
A. Rossi,
M. F. Gonzalez-Zalba,
F. E. Hudson,
A. Morello,
D. J. Reilly,
A. S. Dzurak
Abstract:
Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the f…
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Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the footprint and complexity of the charge sensors, combined with the required proximity to the quantum dots. Alternatively, the spin state can be measured directly by detecting the complex impedance of spin-dependent electron tunnelling between quantum dots. This can be achieved using radio-frequency reflectometry on a single gate electrode defining the quantum dot itself, significantly reducing gate count and architectural complexity, but thus far it has not been possible to achieve single-shot spin readout using this technique. Here, we detect single electron tunnelling in a double quantum dot and demonstrate that gate-based sensing can be used to read out the electron spin state in a single shot, with an average readout fidelity of 73%. The result demonstrates a key step towards the readout of many spin qubits in parallel, using a compact gate design that will be needed for a large-scale semiconductor quantum processor.
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Submitted 1 October, 2018; v1 submitted 6 September, 2018;
originally announced September 2018.
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Single-band to two-band superconductivity transition in two-dimensional oxide interfaces
Authors:
G. Singh,
A. Jouan,
G. Herranz,
M. Scigaj,
F. Sanchez,
L. Benfatto,
S. Caprara,
M. Grilli,
G. Saiz,
F. Couedo,
C. Feuillet-Palma,
J. Lesueur,
N. Bergeal
Abstract:
In multiorbital materials, superconductivity can exhibit new exotic forms that include several coupled condensates. In this context, quantum confinement in two-dimensional superconducting oxide interfaces offers new degrees of freedom to engineer the band structure and selectively control 3d-orbitals occupancy by electrostatic do**. However, the presence of multiple superconducting condensates i…
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In multiorbital materials, superconductivity can exhibit new exotic forms that include several coupled condensates. In this context, quantum confinement in two-dimensional superconducting oxide interfaces offers new degrees of freedom to engineer the band structure and selectively control 3d-orbitals occupancy by electrostatic do**. However, the presence of multiple superconducting condensates in these systems has not yet been demonstrated. Here, we use resonant microwave transport to extract the superfluid stiffness of the (110)-oriented LaAlO3/SrTiO3 interface in the entire phase diagram. We evidence a transition from single-band to two-band superconductivity driven by electrostatic do**, which we relate to the filling of the different 3d-orbitals based on numerical simulations of the quantum well. Interestingly, the superconducting transition temperature decreases while the second band is populated, which challenges the Bardeen-Cooper-Schrieffer theory. To explain this behaviour, we propose that the superconducting order parameters associated with the two bands have opposite signs with respect to each other.
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Submitted 6 June, 2018;
originally announced June 2018.
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Competition between electron pairing and phase coherence in superconducting interfaces
Authors:
G. Singh,
A. Jouan,
L. Benfatto,
F. Couedo,
P. Kumar,
A. Dogra,
R. Budhani,
S. Caprara,
M. Grilli,
E. Lesne,
A. Barthelemy,
M. Bibes,
C. Feuillet-Palma,
J. Lesueur,
N. Bergeal
Abstract:
The large diversity of exotic electronic phases displayed by two-dimensional superconductors confronts physicists with new challenges. These include the recently discovered quantum Griffith singularity in atomic Ga films, topological phases in proximized topological insulators and unconventional Ising pairing in transition metal dichalcogenide layers. In LaAlO3/SrTiO3 heterostructures, a gate tuna…
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The large diversity of exotic electronic phases displayed by two-dimensional superconductors confronts physicists with new challenges. These include the recently discovered quantum Griffith singularity in atomic Ga films, topological phases in proximized topological insulators and unconventional Ising pairing in transition metal dichalcogenide layers. In LaAlO3/SrTiO3 heterostructures, a gate tunable superconducting electron gas is confined in a quantum well at the interface between two insulating oxides. Remarkably, the gas coexists with both magnetism and strong Rashba spin-orbit coupling and is a candidate system for the creation of Majorana fermions. However, both the origin of superconductivity and the nature of the transition to the normal state over the whole do** range remain elusive. Missing such crucial information impedes harnessing this outstanding system for future superconducting electronics and topological quantum computing. Here we show that the superconducting phase diagram of LaAlO3/SrTiO3 is controlled by the competition between electron pairing and phase coherence. Through resonant microwave experiments, we measure the superfluid stiffness and infer the gap energy as a function of carrier density. Whereas a good agreement with the Bardeen-Cooper-Schrieffer (BCS) theory is observed at high carrier do**, we find that the suppression of Tc at low do** is controlled by the loss of macroscopic phase coherence instead of electron pairing as in standard BCS theory. We find that only a very small fraction of the electrons condenses into the superconducting state and propose that this corresponds to the weak filling of a high-energy dxz/yz band, more apt to host superconductivity
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Submitted 11 April, 2017;
originally announced April 2017.
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Ion irradiated YBa2Cu3O7 nano-meanders for superconducting single photon detectors
Authors:
P. Amari,
C. Feuillet-Palma,
A. Jouan,
F. Couedo,
N. Bourlet,
E. Géron,
M. Malnou,
L. Méchin,
A. Sharafiev,
J. Lesueur,
N. Bergeal
Abstract:
We report the fabrication of few hundred microns long, hundreds of nanometers wide and 30 nm thick meanders made from YBa2CU3O7. Thin films protected by a 8 nm-thick Ce02 cap layer have been patterned by high energy (a few tens of keV) oxygen ion irradiation through photoresist masks. DC and RF characterizations outline good superconducting properties of nano-meanders that could be used as Superco…
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We report the fabrication of few hundred microns long, hundreds of nanometers wide and 30 nm thick meanders made from YBa2CU3O7. Thin films protected by a 8 nm-thick Ce02 cap layer have been patterned by high energy (a few tens of keV) oxygen ion irradiation through photoresist masks. DC and RF characterizations outline good superconducting properties of nano-meanders that could be used as Superconducting Single Photon Detectors (SSPD). By mean of a resonant method, their inductance, which mainly sets the maximum speed of these devices, has been measured on a wide range of temperature. It compares favorably with expected values calculated from the geometry of the meanders and the known London penetration depth in YBa2CU3O7.
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Submitted 13 January, 2017; v1 submitted 22 December, 2016;
originally announced December 2016.
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Effect of disorder on superconductivity and Rashba spin-orbit coupling in LaAlO3/SrTiO3 interfaces
Authors:
G. Singh,
A. Jouan,
S. Hurand,
C. Palma,
P. Kumar,
A. Dogra,
R. Budhani,
J. Lesueur,
N. Bergeal
Abstract:
A rather unique feature of the two-dimensional electron gas (2-DEG) formed at the interface between the two insulators LaAlO3 and SrTiO3 is to host both gate-tunable superconductivity and strong spin-orbit coupling. In the present work, we use the disorder generated by Cr substitution of Al atoms in LaAlO3 as a tool to explore the nature of superconductivity and spin-orbit coupling in these interf…
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A rather unique feature of the two-dimensional electron gas (2-DEG) formed at the interface between the two insulators LaAlO3 and SrTiO3 is to host both gate-tunable superconductivity and strong spin-orbit coupling. In the present work, we use the disorder generated by Cr substitution of Al atoms in LaAlO3 as a tool to explore the nature of superconductivity and spin-orbit coupling in these interfaces. A reduction of the superconducting Tc is observed with Cr do** consistent with an increase of electron-electron interaction in presence of disorder. In addition, the evolution of spin-orbit coupling with gate voltage and Cr do** suggests a D'Yakonov-Perel mechanism of spin relaxation in the presence of a Rashba-type spin-orbit interaction.
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Submitted 5 October, 2016;
originally announced October 2016.
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Density driven fluctuations in a two-dimensional superconductor
Authors:
S. Hurand,
J. Biscaras,
N. Bergeal,
C. Feuillet-Palma,
G. Singh,
A. Jouan,
A. Rastogi,
A. Dogra,
P. Kumar,
R. C. Budhani,
N. Scopigno,
S. Caprara,
M. Grilli,
J. Lesueur
Abstract:
In the vicinity of a phase transition, the order parameter starts fluctuating before vanishing at the critical point. The fluctuation regime, i.e. the way the ordered phase disappears, is a characteristics of a transition, and determines the universality class it belongs to. This is valid for thermal transitions, but also for zero temperature Quantum Phase Transitions (QPT).
In the case of super…
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In the vicinity of a phase transition, the order parameter starts fluctuating before vanishing at the critical point. The fluctuation regime, i.e. the way the ordered phase disappears, is a characteristics of a transition, and determines the universality class it belongs to. This is valid for thermal transitions, but also for zero temperature Quantum Phase Transitions (QPT).
In the case of superconductivity, the order parameter has an amplitude and a phase, which can both fluctuate according to well identified scenarios. The Ginzburg-Landau theory and its extensions describe the fluctuating regime of regular metallic superconductors, and the associated dynamics of the pair amplitude and the phase. When the system is two-dimensional and/or very disordered, phase fluctuations dominate.
Here, we address the possibility that a new type of fluctuations occurs in superconductors with an anomalous dynamics. In particular we show that the superconducting to metal QPT that occurs upon changing the gate voltage in two-dimensional electron gases at LAO/STO and LTO/STO interfaces displays anomalous scaling properties, which can be explained by density driven superconducting critical fluctuations.
A Finite Size Scaling (FSS) analysis reveals that the product z.nu (nu is the correlation length exponent and z the dynamical critical one) is z.nu = 3/2. We argue that critical superconducting fluctuations acquire an anomalous dynamics with z=3, since they couple to density ones in the vicinity of a spontaneous electronic phase separation, and that nu=1/2 corresponds to the mean-field value. This approach strongly departs from the conventional z=1 scenario in disordered 2D systems based on long-range Coulomb interactions with dominant phase fluctuations. This scenario can explain recent data in LSCO ultra-thin films, and apply to a whole class of two-dimensional superconductors.
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Submitted 23 June, 2015;
originally announced June 2015.
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Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices
Authors:
S. Hurand,
A. Jouan,
C. Feuillet-Palma,
G. Singh,
J. Biscaras,
E. Lesne,
N. Reyen,
A. Barthelemy,
M. Bibes,
C. Ulysse,
X. Lafosse,
M. Pannetier-Lecoeur,
S. Caprara,
M. Grilli,
J. Lesueur,
N. Bergeal
Abstract:
The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), repr…
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The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements indicate that the Rashba coupling constant increases linearly with electrostatic do**. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates.
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Submitted 3 March, 2015;
originally announced March 2015.
