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Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition
Authors:
A. V. Pogrebnyakov,
J. M. Redwing,
J. E. Jones,
X. X. Xi,
S. Y. Xu,
Q. Li,
V. Vaithyanathan,
D. G. Schlom
Abstract:
We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thi…
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We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature, Tc, increased and the residual resistivity, rho0, decreased. Above about 300 nm, a Tc of 41.8 K, a rho0 of 0.28 mikroOhm.cm, and a residual resistance ratio RRR of over 30 were obtained. These values represent the best MgB2 properties reported thus far.
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Submitted 7 April, 2003;
originally announced April 2003.
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CVD-based approach to the growth of epitaxial MgB2 thin films
Authors:
A. V. Pogrebnyakov,
X. H. Zheng,
A. Kotcharov,
J. E. Jones,
X. X. Xi,
E. M. Lysczek,
J. Redwing,
S. Y. Xu,
Q. Li,
J. Lettiery,
D. G. Schlom,
J. Schallenberger,
Z. K. Liu,
W. Tian,
X. Q. Pan
Abstract:
The paper has been withdrawn
The paper has been withdrawn
△ Less
Submitted 9 April, 2002; v1 submitted 6 April, 2002;
originally announced April 2002.
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In situ epitaxial MgB2 thin films for superconducting electronics
Authors:
X. H. Zeng,
A. V. Pogrebnyakov,
A. Kotcharov,
J. E. Jones,
X. X. Xi,
E. M. Lysczek,
J. M. Redwing,
S. Y. Xu,
Qi Li,
J. Lettieri,
D. G. Schlom,
W. Tian,
X. Q. Pan,
Z. K. Liu
Abstract:
A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ}…
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A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ} growth of MgB$_2$ thin films. The films grow epitaxially on (0001) sapphire and (0001) 4H-SiC substrates and show a bulk-like $T_c$ of 39 K, a $J_c$(4.2K) of $1.2 \times 10^7$ A/cm$^2$ in zero field, and a $H_{c2}(0)$ of 29.2 T in parallel magnetic field. The surface is smooth with a root-mean-square roughness of 2.5 nm for MgB$_2$ films on SiC. This deposition method opens tremendous opportunities for superconducting electronics using MgB$_2$.
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Submitted 27 March, 2002;
originally announced March 2002.
