Showing 1–9 of 9 results for author: Joishi, C

Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor

Authors: Sheikh Ifatur Rahman, Mohammad Awwad, Chandan Joishi, Zane-Jamal Eddine, Brendan Gunning, Andrew Armstrong, Siddharth Rajan

Abstract: GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage) control rather than current controlled schemes. Th… ▽ More GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage) control rather than current controlled schemes. This approach can greatly reduce system complexity for the driver circuit arrays while maintaining device opto-electronic performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. The integrated device exhibits excellent gate control, drain current control and optical emission control. This work provides a promising pathway for future monolithic integration of GaN FETs with microLED to enable fast switching high efficiency microLED display and communication systems. △ Less

Submitted 29 May, 2024; v1 submitted 7 April, 2024; originally announced April 2024.

Design and Simulation of a III-Nitride Light Emitting Transistor

Authors: Mohammad Awwad, Sheikh Ifatur Rahman, Chandan Joishi, Betty Lise Anderson, Siddharth Rajan

Abstract: This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel do** and thickness on the voltage penalty of the transistor-LED hybrid device is analyzed, and it is shown that with appropriate design, low voltage drop can be realized across integrated gated LED structures. The impact of… ▽ More This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel do** and thickness on the voltage penalty of the transistor-LED hybrid device is analyzed, and it is shown that with appropriate design, low voltage drop can be realized across integrated gated LED structures. The impact of device design on the switching charge is investigated, and it is shown that the adoption of an integrated LED/transistor structure can reduce the switching charge necessary for operation of a switched LED display device by an order of magnitude when compared with stand-alone light-emitting diodes. △ Less

Submitted 7 April, 2024; originally announced April 2024.

Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts

Authors: Chandan Joishi, Sheikh Ifatur Rahman, Zhanbo Xia, Shahadat H. Sohel, Siddharth Rajan

Abstract: We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective injection of minority carriers across a p-GaN base and patterned regrown base contacts. The selective injection design regulates minority carrier transport under emitter-base forward bias through a thin base region, while thick and highly doped p$^+$ GaN regrown layers patterned alongside the thin base regions… ▽ More We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective injection of minority carriers across a p-GaN base and patterned regrown base contacts. The selective injection design regulates minority carrier transport under emitter-base forward bias through a thin base region, while thick and highly doped p$^+$ GaN regrown layers patterned alongside the thin base regions are utilized to lower the base contact resistance. With SiO$_2$ employed as a spacer between the emitter and the p$^+$ regrown layers, the device with an interdigitated emitter/base-contact stripe design displayed a maximum collector current density (I$_C$) of 101 kA/cm$^2$, a maximum current gain ($β$) of 70 at I$_C$ $\sim$ 1 kA/cm$^2$ and $\sim$ 11 for I$_C$ $>$ 50 kA/cm$^2$. The reported results demonstrate the potential of the selective injection approach to break the long-existing HBT design tradeoff between base resistance and current gain for next-generation radio frequency and mm-Wave applications. △ Less

Submitted 18 September, 2023; originally announced September 2023.

$β$-Ga$_2$O$_3$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Authors: Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan, Sheikh Ifatur Rahman, Chandan Joishi, Siddharth Rajan

Abstract: $β$-Ga$_2$O$_3… ▽ More $β$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at breakdown voltage as of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in $β$-Ga$_2$O$_3$ vertical power devices. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: 10 pages, 5 figures

Nb$_{2}$O$_{5}$ high-k dielectric enabled electric field engineering of $β$-Ga$_{2}$O$_{3}$ metal-insulator-semiconductor (MIS) diode

Authors: Prabhans Tiwari, Jayeeta Biswas, Chandan Joishi, Saurabh Lodha

Abstract: We demonstrate an Nb$_{2}$O$_{5}$/$β$-Ga$_{2}$O$_{3}$ metal-insulator-semiconductor (MIS) hetero-junction diode with Nb$_{2}$O$_{5}$ as the high-k dielectric insulator for more efficient electric field management resulting in enhanced breakdown characteristics compared to a $β$-Ga$_{2}$O$_{3}$ Schottky barrier diode. The Nb$_{2}$O$_{5}$ dielectric films were grown using atomic layer deposition and… ▽ More We demonstrate an Nb$_{2}$O$_{5}$/$β$-Ga$_{2}$O$_{3}$ metal-insulator-semiconductor (MIS) hetero-junction diode with Nb$_{2}$O$_{5}$ as the high-k dielectric insulator for more efficient electric field management resulting in enhanced breakdown characteristics compared to a $β$-Ga$_{2}$O$_{3}$ Schottky barrier diode. The Nb$_{2}$O$_{5}$ dielectric films were grown using atomic layer deposition and exhibited a high dielectric constant of 50. The high dielectric constant resulted in a 5$\times$ lower electric field at the metal/dielectric interface in the MIS diode compared to the metal/$β$-Ga$_{2}$O$_{3}$ interface in the Schottky barrier diode. With good electron conduction in forward bias enabled by the negative conduction band offset of Nb$_{2}$O$_{5}$ w.r.t $β$-Ga$_{2}$O$_{3}$, the MIS design led to a 3$\times$ improvement in the reverse blocking voltage with a slight trade-off in the specific on-resistance. Overall, a 3.3$\times$ increase in the power figure of merit was observed (3.25 MW/cm$^2$ for the Schottky diode and 10.8 MW/cm$^2$ for the MIS diode). A detailed analysis of the energy band line-up, and the forward and reverse current transport mechanisms are also presented using analytical modeling and 2-D TCAD simulations. △ Less

Submitted 25 October, 2021; originally announced October 2021.

Comments: The following article has been submitted to 'Journal of Applied Physics' and the link will be updated if it gets published

Charge trap layer enabled positive tunable V$_{fb}$ in $β$-Ga$_{2}$O$_{3}$ gate stacks for enhancement mode transistors

Authors: Dipankar Biswas, Chandan Joishi, Jayeeta Biswas, Prabhans Tiwari, Saurabh Lodha

Abstract: $β$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits. A novel approach towards attaining a high positive flat band voltage (V$_{fb}$) of 10.6 V in $β$-Ga$_{2}$O$_{3}… ▽ More $β$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits. A novel approach towards attaining a high positive flat band voltage (V$_{fb}$) of 10.6 V in $β$-Ga$_{2}$O$_{3}$ metal-oxide-semiconductor capacitors (MOSCAPs), with the ability to fine tune it between 3.5 V to 10.6 V, using a polycrystalline AlN charge trap layer has been demonstrated. This can enable enhancement mode operation over a wide do** range. Excellent V$_{fb}$ retention of ${\sim}$97% for 10$^{4}$ s at 55 $^{\circ}$C was exhibited by the gate stacks after charge trap**, hence reducing the requirement of frequent charge injection cycles. In addition, low gate leakage current density (J$_{g}$) for high negative gate voltages (V$_{g}$${\sim}$-60 V) indicates the potential of this gate stack to enable superior breakdown characteristics in enhancement mode transistors. △ Less

Submitted 11 May, 2020; originally announced May 2020.

Comments: Single file (Manuscript and Supplementary material combined) of 19 pages. Total 5 and 4 figures in manuscript and supplementary material, respectively

Deep-recessed $β$-Ga$_2$O$_3$ delta-doped field effect transistors with in situ epitaxial passivation

Authors: Chandan Joishi, Zhanbo Xia, John S. Jamison, Shahadat H. Sohel, Roberto C. Myers, Saurabh Lodha, Siddharth Rajan

Abstract: We introduce a deep-recessed gate architecture in $β$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped $β$-Ga$_2$O$_3$ layer as the passivation dielectric. To fabricate the device, the deep-recess geometry was developed using BCl$_3$ plasma based etching at ~5 W RIE to ensure minim… ▽ More We introduce a deep-recessed gate architecture in $β$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped $β$-Ga$_2$O$_3$ layer as the passivation dielectric. To fabricate the device, the deep-recess geometry was developed using BCl$_3$ plasma based etching at ~5 W RIE to ensure minimal plasma damage. Etch damage incurred with plasma etching was mitigated by annealing in vacuum at temperatures above 600 $°$C. A gate-connected field-plate edge termination was implemented for efficient field management. Negligible surface dispersion with lower knee-walkout at high V$_\mathrm{DS}$, and better breakdown characteristics compared to their unpassivated counterparts were achieved. A three terminal off-state breakdown voltage of 315 V, corresponding to an average breakdown field of 2.3 MV/cm was measured. The device breakdown was limited by the field-plate/passivation edge and presents scope for further improvement. This demonstration of epitaxially passivated field effect transistors is a significant step for $β$-Ga$_2$O$_3$ technology since the structure simultaneously provides control of surface-related dispersion and excellent field management. △ Less

Submitted 22 April, 2020; originally announced April 2020.

High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures

Authors: Yuewei Zhang, Adam Neal, Zhanbo Xia, Chandan Joishi, Yuanhua Zheng, Sanyam Bajaj, Mark Brenner, Shin Mou, Donald Dorsey, Kelson Chabak, Gregg Jessen, **woo Hwang, Joseph Heremans, Siddharth Rajan

Abstract: Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high breakdown field, together with the availability of low-cost native substrates, make \b{eta}-Ga2O3 a promising material compared to other conventional wide bandgap mat… ▽ More Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high breakdown field, together with the availability of low-cost native substrates, make \b{eta}-Ga2O3 a promising material compared to other conventional wide bandgap materials, such as GaN and SiC. Alloying of Al with \b{eta}-Ga2O3 could enable even larger band gap materials, and provide more flexibility for electronic and optoelectronic device design. In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the \b{eta}-(AlxGa1-x)2O3/Ga2O3 interface through modulation do**. Shubnikov-de Haas oscillation was observed for the first time in the modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by a weak temperature-dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than can be achieved in bulk-doped \b{eta}-Ga2O3. The demonstrated modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena as well as new semiconductor device technologies based on the \b{eta}-Ga2O3 material system. △ Less

Submitted 12 February, 2018; originally announced February 2018.

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Authors: Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi, Yuewei Zhang, Joe McGlone, Jared Johnson, Mark Brenner, Aaron R. Arehart, **woo Hwang, Saurabh Lodha, Siddharth Rajan

Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta do**. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG… ▽ More Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta do**. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation do** in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices for high performance electronics. △ Less

Submitted 28 June, 2017; originally announced June 2017.