-
Registry-dependent potential energy and lattice corrugation of twisted bilayer graphene from quantum Monte Carlo
Authors:
Kittithat Krongchon,
Tawfiqur Rakib,
Shivesh Pathak,
Elif Ertekin,
Harley T. Johnson,
Lucas K. Wagner
Abstract:
An uncertainty in studying twisted bilayer graphene (TBG) is the minimum energy geometry, which strongly affects the electronic structure. The minimum energy geometry is determined by the potential energy surface, which is dominated by van der Waals (vdW) interactions. In this work, large-scale diffusion quantum Monte Carlo (QMC) simulations are performed to evaluate the energy of bilayer graphene…
▽ More
An uncertainty in studying twisted bilayer graphene (TBG) is the minimum energy geometry, which strongly affects the electronic structure. The minimum energy geometry is determined by the potential energy surface, which is dominated by van der Waals (vdW) interactions. In this work, large-scale diffusion quantum Monte Carlo (QMC) simulations are performed to evaluate the energy of bilayer graphene at various interlayer distances for four stacking registries. An accurate registry-dependent potential is fit to the QMC data and is used to describe interlayer interactions in the geometry of near-magic-angle TBG. The band structure for the optimized geometry is evaluated using the accurate local-environment tight-binding model. We find that compared to QMC, DFT-based vdW interactions can result in errors in the corrugation magnitude by a factor of 2 or more near the magic angle. The error in corrugation then propagates to the flat bands in twisted bilayer graphene, where the error in corrugation can affect the bandwidth by about 30\% and can change the nature and degeneracy of the flat bands.
△ Less
Submitted 12 November, 2023; v1 submitted 14 July, 2023;
originally announced July 2023.
-
Type Ia Supernova Models: Asymmetric Remnants and Supernova Remnant G1.9+0.3
Authors:
Alice G. Stone,
Heather T. Johnson,
John M. Blondin,
Richard A. Watson,
Kazimierz J. Borkowski,
Carla Frohlich,
Ivo R. Seitenzahl,
Stephen P. Reynolds
Abstract:
The youngest Galactic supernova remnant G1.9+0.3, probably the result of a Type Ia supernova, shows surprising anomalies in the distribution of its ejecta in space and velocity. In particular, high-velocity shocked iron is seen in several locations far from the remnant center, in some cases beyond prominent silicon and sulfur emission. These asymmetries strongly suggest a highly asymmetric explosi…
▽ More
The youngest Galactic supernova remnant G1.9+0.3, probably the result of a Type Ia supernova, shows surprising anomalies in the distribution of its ejecta in space and velocity. In particular, high-velocity shocked iron is seen in several locations far from the remnant center, in some cases beyond prominent silicon and sulfur emission. These asymmetries strongly suggest a highly asymmetric explosion. We present high-resolution hydrodynamic simulations in two and three dimensions of the evolution from ages of 100 seconds to hundreds of years of two asymmetric Type Ia models, expanding into a uniform medium. At the age of G1.9+0.3 (about 100 years), our 2D model shows almost no iron shocked to become visible in X-rays. Only in a much higher-density environment could significant iron be shocked, at which time the model's expansion speed is completely inconsistent with the observations of G1.9+0.3. Our 3D model, evolving the most asymmetric of a suite of Type Ia SN models from Seitenzahl et al.~(2013), shows some features resembling G1.9+0.3. We characterize its evolution with images of composition in three classes: C and O, intermediate-mass elements (IMEs), and iron-group elements (IGEs). From ages of 13 to 1800 years, we follow the evolution of the highly asymmetric initial remnant as the explosion asymmetries decrease in relative strength to be replaced by asymmetries due to evolutionary hydrodynamic instabilities. At an age of about 100 years, our 3D model has comparable shocked masses of C+O, IMEs, and IGEs, with about 0.03 $M_\odot$ each. Evolutionary changes appear to be rapid enough that continued monitoring with the Chandra X-ray Observatory may show significant variations.
△ Less
Submitted 15 October, 2021;
originally announced October 2021.
-
An accurate tight binding model for twisted bilayer graphene describes topological flat bands without geometric relaxation
Authors:
Shivesh Pathak,
Tawfiqur Rakib,
Run Hou,
Andriy Nevidomskyy,
Elif Ertekin,
Harley T. Johnson,
Lucas K. Wagner
Abstract:
A major hurdle in understanding the phase diagram of twisted bilayer graphene (TBLG) are the roles of lattice relaxation and electronic structure on isolated band flattening near magic twist angles. In this work, the authors develop an accurate local environment tight binding model (LETB) fit to tight binding parameters computed from $ab\ initio$ density functional theory (DFT) calculations across…
▽ More
A major hurdle in understanding the phase diagram of twisted bilayer graphene (TBLG) are the roles of lattice relaxation and electronic structure on isolated band flattening near magic twist angles. In this work, the authors develop an accurate local environment tight binding model (LETB) fit to tight binding parameters computed from $ab\ initio$ density functional theory (DFT) calculations across many atomic configurations. With the accurate parameterization, it is found that the magic angle shifts to slightly lower angles than often quoted, from around 1.05$^\circ$ to around 0.99$^\circ$, and that isolated flat bands appear for rigidly rotated graphene layers, with enhancement of the flat bands when the layers are allowed to distort. Study of the orbital localization supports the emergence of fragile topology in the isolated flat bands without the need for lattice relaxation.
△ Less
Submitted 7 October, 2021;
originally announced October 2021.
-
Selection rules of twistronic angles in 2D material flakes via dislocation theory
Authors:
Shuze Zhu,
Emil Annevelink,
Pascal Pochet,
Harley T. Johnson
Abstract:
Interlayer rotation angle couples strongly to the electronic states of twisted van der Waals layers. However, not every angle is energetically favorable. Recent experiments on rotation-tunable electronics reveal the existence of a discrete set of angles at which the rotation-tunable electronics assume the most stable configurations. Nevertheless, a quantitative map for locating these intrinsically…
▽ More
Interlayer rotation angle couples strongly to the electronic states of twisted van der Waals layers. However, not every angle is energetically favorable. Recent experiments on rotation-tunable electronics reveal the existence of a discrete set of angles at which the rotation-tunable electronics assume the most stable configurations. Nevertheless, a quantitative map for locating these intrinsically preferred twist angles in twisted bilayer system has not been available, posing challenges for the on-demand design of twisted electronics that are intrinsically stable at desired twist angles. Here we reveal a simple map** between intrinsically preferred twist angles and geometry of the twisted bilayer system, in the form of geometric scaling laws for a wide range of intrinsically preferred twist angles as a function of only geometric parameters of the rotating flake on a supporting layer. We reveal these scaling laws for triangular and hexagonal flakes since they frequently appear in chemical vapor deposition growth. We also present a general method for handling arbitrary flake geometry. Such dimensionless scaling laws possess universality for all kinds of two-dimensional material bilayer systems, providing abundant opportunities for the on-demand design of intrinsic "twistronics". For example, the set of increasing magic-sizes that intrinsically prefers zero-approaching sequence of multiple magic-angles in bilayer graphene system can be revealed.
△ Less
Submitted 29 September, 2020;
originally announced September 2020.
-
Strain Modulation of Graphene by Nanoscale Substrate Curvatures: A Molecular View
Authors:
Yingjie Zhang,
Mohammad Heiranian,
Blanka Janicek,
Zoe Budrikis,
Stefano Zapperi,
Pinshane Y. Huang,
Harley T. Johnson,
Narayana R. Aluru,
Joseph W. Lyding,
Nadya Mason
Abstract:
Spatially nonuniform strain is important for engineering the pseudomagnetic field and band structure of graphene. Despite the wide interest in strain engineering, there is still a lack of control on device-compatible strain patterns due to the limited understanding of the structure-strain relationship. Here, we study the effect of substrate corrugation and curvature on the strain profiles of graph…
▽ More
Spatially nonuniform strain is important for engineering the pseudomagnetic field and band structure of graphene. Despite the wide interest in strain engineering, there is still a lack of control on device-compatible strain patterns due to the limited understanding of the structure-strain relationship. Here, we study the effect of substrate corrugation and curvature on the strain profiles of graphene via combined experimental and theoretical studies of a model system: graphene on closely packed SiO2 nanospheres with different diameters (20-200 nm). Experimentally, via quantitative Raman analysis, we observe partial adhesion and wrinkle features and find that smaller nanospheres induce larger tensile strain in graphene, theoretically, molecular dynamics simulations confirm the same microscopic structure and size dependence of strain and reveal that a larger strain is caused by a stronger, inhomogeneous interaction force between smaller nanospheres and graphene. This molecular-level understanding of the strain mechanism is important for strain engineering of graphene and other two-dimensional materials.
△ Less
Submitted 5 March, 2018;
originally announced March 2018.
-
Toward Moiré engineering in 2D materials via dislocation theory
Authors:
P. Pochet,
B. McGuigan,
J. Coraux,
H. T. Johnson
Abstract:
We present a framework that explains the strong connection in 2D materials between mechanics and electronic structure, via dislocation theory. Within this framework, Moiré patterns created by layered 2D materials may be understood as dislocation arrays, and vice versa. The dislocations are of a unique type that we describe as van der Waals dislocations, for which we present a complete geometrical…
▽ More
We present a framework that explains the strong connection in 2D materials between mechanics and electronic structure, via dislocation theory. Within this framework, Moiré patterns created by layered 2D materials may be understood as dislocation arrays, and vice versa. The dislocations are of a unique type that we describe as van der Waals dislocations, for which we present a complete geometrical description, connected to both stretch and twist Moiré patterns. A simple computational scheme, which reduces the complexity of the electronic interaction between layers in order to make the problem computationally tractable, is introduced to simulate these dislocation arrays, allowing us to predict and explain all of the observed Moiré patterns in 2D material systems within a unique framework. We extend this analysis as well to defects in Moiré patterns, which have been reported recently, and which are the result of defects of the same symmetry in the constituent 2D material layers. Finally, we show that linear defects in the Moiré space can be viewed as unidimensional topological states, and can be engineered using our framework
△ Less
Submitted 29 September, 2017;
originally announced September 2017.
-
Structural Trends Interpretation of the Metal-to-Semiconductor Transition in Deformed Carbon Nanotubes
Authors:
Jun-Qiang Lu,
Jian Wu,
Wenhui Duan,
Bing-Lin Gu,
H. T. Johnson
Abstract:
Two mechanisms that drive metal-to-semiconductor transitions in single-walled carbon nanotubes are theoretically analyzed through a simple tight-binding model. By considering simple structural trends, the results demonstrate that metal-to-semiconductor transitions can be induced more readily in metallic zigzag nanotubes than in armchair nanotubes. Furthermore, it is shown that both mechanisms ha…
▽ More
Two mechanisms that drive metal-to-semiconductor transitions in single-walled carbon nanotubes are theoretically analyzed through a simple tight-binding model. By considering simple structural trends, the results demonstrate that metal-to-semiconductor transitions can be induced more readily in metallic zigzag nanotubes than in armchair nanotubes. Furthermore, it is shown that both mechanisms have the effect of making the two originally equivalent sublattices physically distinguishable.
△ Less
Submitted 25 May, 2004;
originally announced May 2004.
-
Finite Element Analysis of Strain Effects on Electronic and Transport Properties in Quantum Dots and Wires
Authors:
H. T. Johnson,
L. B. Freund,
C. D. Akyuz,
A. Zaslavsky
Abstract:
Lattice mismatch in layered semiconductor structures with submicron length scales leads to extremely high nonuniform strains. This paper presents a finite element technique for incorporating the effects of the nonuniform strain into an analysis of the electronic properties of SiGe quantum structures. Strain fields are calculated using a standard structural mechanics finite element package and th…
▽ More
Lattice mismatch in layered semiconductor structures with submicron length scales leads to extremely high nonuniform strains. This paper presents a finite element technique for incorporating the effects of the nonuniform strain into an analysis of the electronic properties of SiGe quantum structures. Strain fields are calculated using a standard structural mechanics finite element package and the effects are included as a nonuniform potential directly in the time independent Schrodinger equation; a k-p Hamiltonian is used to model the effects of multiple valence subband coupling. A variational statement of the equation is formulated and solved using the finite element method. This technique is applied to resonant tunneling diode quantum dots and wires; the resulting densities of states confined to the quantum well layers of the devices are compared to experimental current-voltage I(V) curves.
△ Less
Submitted 2 June, 1998;
originally announced June 1998.
