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Valence state and lattice incorporation of Ni in Zn/Co-based magnetic oxides
Authors:
V. Ney,
B. Henne,
M. de Souza,
W. Jantsch,
K. M. Johansen,
F. Wilhelm,
A. Rogalev,
A. Ney
Abstract:
Ni incorporation has been studied in a comprehensive range of Zn/Co-based magnetic oxides to elucidate it valence state and lattice incorporation. The resulting structural and magnetic properties are studied in detail. To the one end Ni in incorporated by in-diffusion as well as reactive magnetron co-sputtering in wurtzite ZnO where only the Ni-diffused ZnO exhibits significant conductivity. This…
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Ni incorporation has been studied in a comprehensive range of Zn/Co-based magnetic oxides to elucidate it valence state and lattice incorporation. The resulting structural and magnetic properties are studied in detail. To the one end Ni in incorporated by in-diffusion as well as reactive magnetron co-sputtering in wurtzite ZnO where only the Ni-diffused ZnO exhibits significant conductivity. This is complemented by Ni and Co codo** of ZnO leading. To the other end, the ZnCo$_2$O$_4$ spinel is co-doped with varying amounts of Ni. In the wurtzite oxides Ni is exclusively found on tetrahedral lattice sites in its formal 2+ oxidation state as deep donor. It behaves as an anisotropic paramagnet and a limited solubility of Ni about 10\% is found. Due to its smaller magnetic moment it can induce partial uncompensation of the Co magnetic moments due to antiferromagnetic coupling. In the spinel Ni is found to be incorporated in its formal 3+ oxidation state on octahedral sites and couples antiferromagnetically to the Co moments leading again to magnetic uncompensation of the otherwise antiferromagnetic ZnCo$_2$O$_4$ spinel and to ferrimagnetism at higher Ni concentrations. Increasing Ni even further leads to phase separation of cubic NiO resulting in an exchange-biased composite magnetic oxide.
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Submitted 9 August, 2022;
originally announced August 2022.
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Strain modulation of Si vacancy emission from SiC micro- and nanoparticles
Authors:
G. C. Vásquez,
M. E. Bathen,
A. Galeckas,
C. Bazioti,
K. M. Johansen,
D. Maestre,
A. Cremades,
Ø. Prytz,
A. M. Moe,
A. Yu. Kuznetsov,
L. Vines
Abstract:
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 $μ$m in size is collected using cathodoluminescence…
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Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 $μ$m in size is collected using cathodoluminescence (CL), and we monitor signals attributed to the Si vacancy (V$_{\textrm{Si}}$) as a function of its location. Clear shifts in the emission wavelength are found for emitters localized in the particle center and at the edges. By comparing spatial CL maps with strain analysis carried out in transmission electron microscopy, we attribute the emission shifts to compressive strain of 2-3% along the particle a-direction. Thus, embedding V$_{\textrm{Si}}$ qubit defects within SiC nanoparticles offers an interesting and versatile opportunity to tune single-photon emission energies, while simultaneously ensuring ease of addressability via a self-assembled SiC nanoparticle matrix.
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Submitted 5 November, 2020;
originally announced November 2020.
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Negative-U and polaronic behavior of the Zn-O divacancy in ZnO
Authors:
Y. K. Frodason,
K. M. Johansen,
A. Alkauskas,
L. Vines
Abstract:
Hybrid functional calculations reveal the Zn-O divacancy in ZnO, consisting of adjacent Zn and O vacancies, as an electrically active defect exhibiting charge states ranging from $2+$ to $2-$ within the band gap. Notably, the divacancy retains key features of the monovacancies, namely the negative-\textit{U} behavior of the O vacancy, and the polaronic nature of the Zn vacancy. The thermodynamic c…
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Hybrid functional calculations reveal the Zn-O divacancy in ZnO, consisting of adjacent Zn and O vacancies, as an electrically active defect exhibiting charge states ranging from $2+$ to $2-$ within the band gap. Notably, the divacancy retains key features of the monovacancies, namely the negative-\textit{U} behavior of the O vacancy, and the polaronic nature of the Zn vacancy. The thermodynamic charge-state transition levels associated with the negative-\textit{U} behavior $\varepsilon$($0$/$2-$), $\varepsilon$($-$/$2-$) and $\varepsilon$($0$/$-$) are predicted to occur at 0.22, 0.42 and 0.02 eV below the conduction band minimum, respectively, resulting in \textit{U} = $-$0.40 eV. These transition levels are moved closer to the conduction band and the magnitude of \textit{U} is lowered compared to the values for the O vacancy. Further, the interaction with hydrogen has been explored, where it is shown that the divacancy can accommodate up to three H atoms. The first two H atoms prefer to terminate O dangling bonds at the Zn vacancy, while the geometrical location of the third depends on the Fermi-level position. The calculated electrical properties of the divacancy are in excellent agreement with those reported for the E4 center observed by deep-level transient spectroscopy, challenging the O vacancy as a candidate for this level.
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Submitted 15 May, 2019;
originally announced May 2019.
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Zn vacancy-donor impurity complexes in ZnO
Authors:
Y. K. Frodason,
K. M. Johansen,
T. S. Bjørheim,
B. G. Svensson,
A. Alkauskas
Abstract:
Results from hybrid density functional theory calculations on the thermodynamic stability and optical properties of the Zn vacancy ($V_{\text{Zn}}$) complexed with common donor impurities in ZnO are reported. Complexing $V_{\text{Zn}}$ with donors successively removes its charge-state transition levels in the band gap, starting from the most negative one. Interestingly, the presence of a donor lea…
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Results from hybrid density functional theory calculations on the thermodynamic stability and optical properties of the Zn vacancy ($V_{\text{Zn}}$) complexed with common donor impurities in ZnO are reported. Complexing $V_{\text{Zn}}$ with donors successively removes its charge-state transition levels in the band gap, starting from the most negative one. Interestingly, the presence of a donor leads only to modest shifts in the positions of the $V_{\text{Zn}}$ charge-state transition levels, the sign and magnitude of which can be interpreted from a polaron energetics model by taking hole-donor repulsion into account. By employing a one-dimensional configuration coordinate model, luminescence lineshapes and positions were calculated. Due to the aforementioned effects, the isolated $V_{\text{Zn}}$ gradually changes from a mainly non-radiative defect with transitions in the infrared region in \textit{n}-type material, to a radiative one with broad emission in the visible range when complexed with shallow donors.
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Submitted 3 April, 2018;
originally announced April 2018.
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Zn vacancy as a polaronic hole trap in ZnO
Authors:
Y. K. Frodason,
K. M. Johansen,
T. S. Bjørheim,
B. G. Svensson,
A. Alkauskas
Abstract:
This work explores the Zn vacancy in ZnO using hybrid density functional theory calculations. The Zn vacancy is predicted to be an exceedingly deep polaronic acceptor that can bind a localized hole on each of the four nearest-neighbor O ions. The hole localization is accompanied by a distinct outward relaxation of the O ions, which leads to lower symmetry and reduced formation energy. Notably, we…
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This work explores the Zn vacancy in ZnO using hybrid density functional theory calculations. The Zn vacancy is predicted to be an exceedingly deep polaronic acceptor that can bind a localized hole on each of the four nearest-neighbor O ions. The hole localization is accompanied by a distinct outward relaxation of the O ions, which leads to lower symmetry and reduced formation energy. Notably, we find that initial symmetry-breaking is required to capture this effect, which might explain the absence of polaronic hole localization in some previous hybrid density functional studies. We present a simple model to rationalize our findings with regard to the approximately equidistant thermodynamic charge-state transition levels. Furthermore, by employing a one-dimensional configuration coordinate model with parameters obtained from the hybrid density functional theory calculations, luminescence lineshapes were calculated. The results show that the isolated Zn vacancy is unlikely to be the origin of the commonly observed luminescence in the visible part of the emission spectrum from \textit{n}-type material, but rather the luminescence in the infrared region.
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Submitted 25 May, 2017;
originally announced May 2017.
