-
Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors
Authors:
P. Majchrzak,
K. Volckaert,
A. G. Cabo,
D. Biswas,
M. Bianchi,
S. K. Mahatha,
M. Dendzik,
F. Andreatta,
S. S. Grønborg,
I. Marković,
J. M. Riley,
J. C. Johannsen,
D. Lizzit,
L. Bignardi,
S. Lizzit,
C. Cacho,
O. Alexander,
D. Matselyukh,
A. S. Wyatt,
R. T. Chapman,
E. Springate,
J. V. Lauritsen,
P. D. C. King,
C. E. Sanders,
J. A. Miwa
, et al. (2 additional authors not shown)
Abstract:
The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the sing…
▽ More
The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS$_2$ and WS$_2$ on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS$_2$. These multiple timescales are explained by Auger recombination involving MoS$_2$ and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states.
△ Less
Submitted 31 March, 2021;
originally announced March 2021.
-
A Novel Quasi-One-Dimensional Topological Insulator in Bismuth Iodide $β$-Bi$_4$I$_4$
Authors:
Gabriel Autès,
Anna Isaeva,
Luca Moreschini,
Jens C. Johannsen,
Andrea Pisoni,
Ryo Mori,
Wentao Zhang,
Taisia G. Filatova,
Alexey N. Kuznetsov,
László Forró,
Wouter Van den Broek,
Yeongkwan Kim,
Keun Su Kim,
Alessandra Lanzara,
Jonathan D. Denlinger,
Eli Rotenberg,
Aaron Bostwick,
Marco Grioni,
Oleg V. Yazyev
Abstract:
Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs)(3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs(17-19). However, both the conceptual richness of Z$_2$ classification of TIs as well as their structural and compositional di…
▽ More
Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs)(3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs(17-19). However, both the conceptual richness of Z$_2$ classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z$_2$ topological insulator is theoretically predicted and experimentally confirmed in the $β$-phase of quasi-one-dimensional bismuth iodide Bi$_4$I$_4$. The electronic structure of $β$-Bi$_4$I$_4$, characterized by Z$_2$ invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements on the (001) surface reveal a highly anisotropic band-crossing feature located at the point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.
△ Less
Submitted 20 June, 2016;
originally announced June 2016.
-
Ultrafast Band Structure Control of a Two-Dimensional Heterostructure
Authors:
Søren Ulstrup,
Antonija Grubišić Čabo,
Jill A. Miwa,
Jonathon M. Riley,
Signe S. Grønborg,
Jens C. Johannsen,
Cephise Cacho,
Oliver Alexander,
Richard T. Chapman,
Emma Springate,
Marco Bianchi,
Maciej Dendzik,
Jeppe V. Lauritsen,
Phil D. C. King,
Philip Hofmann
Abstract:
The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and inter-l…
▽ More
The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and inter-layer interactions. Here, using time- and angle-resolved photoemission, we are able to isolate both the layer-resolved band structure and, more importantly, the transient band structure evolution of a model 2D heterostructure formed of a single layer of MoS$_2$ on graphene. Our results reveal a pronounced renormalization of the quasiparticle gap of the MoS$_2$ layer. Following optical excitation, the band gap is reduced by up to $\sim\!$400 meV on femtosecond timescales due to a persistence of strong electronic interactions despite the environmental screening by the $n$-doped graphene. This points to a large degree of tuneability of both the electronic structure and electron dynamics for 2D semiconductors embedded in a van der Waals-bonded heterostructure.
△ Less
Submitted 11 June, 2016;
originally announced June 2016.
-
Ultrafast Electron Dynamics in Epitaxial Graphene Investigated with Time- and Angle-Resolved Photoemission Spectroscopy
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Alberto Crepaldi,
Federico Cilento,
Michele Zacchigna,
Cephise Cacho,
Richard T. Chapman,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphe…
▽ More
In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the $π$ band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.
△ Less
Submitted 5 January, 2016;
originally announced January 2016.
-
Tunable Carrier Multiplication and Cooling in Graphene
Authors:
Jens C. Johannsen,
Søren Ulstrup,
Alberto Crepaldi,
Federico Cilento,
Michele Zacchigna,
Jill A. Miwa,
Cephise Cacho,
Richard T. Chapman,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Phil D. C. King,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different do** levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium c…
▽ More
Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different do** levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less ($p$-)doped graphene. These results suggest that a careful tuning of the do** level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.
△ Less
Submitted 4 January, 2016;
originally announced January 2016.
-
Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS$_2$
Authors:
Antonija Grubišić Čabo,
Jill A. Miwa,
Signe S. Grønborg,
Jonathon M. Riley,
Jens C. Johannsen,
Cephise Cacho,
Oliver Alexander,
Richard T. Chapman,
Emma Springate,
Marco Grioni,
Jeppe V. Lauritsen,
Phil D. C. King,
Philip Hofmann,
Søren Ulstrup
Abstract:
The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS$_2$ on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band ga…
▽ More
The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS$_2$ on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS$_2$. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.
△ Less
Submitted 28 August, 2015;
originally announced August 2015.
-
Ramifications of Optical Pum** on the Interpretation of Time-Resolved Photoemission Experiments on Graphene
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Federico Cilento,
Alberto Crepaldi,
Jill A. Miwa,
Michele Zacchigna,
Cephise Cacho,
Richard T. Chapman,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Phil D. C. King,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system…
▽ More
In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system. These processes can severely affect a correct interpretation of the data by masking the out-of-equilibrium electron dynamics intrinsic to the sample. In this study, we show that such effects indeed influence TR-ARPES data of graphene on a silicon carbide (SiC) substrate. In particular, we find a time- and laser fluence-dependent spectral shift and broadening of the acquired spectra, and unambiguously show the presence of a double pump excitation. The dynamics of these effects is slower than the electron dynamics in the graphene sample, thereby permitting us to deconvolve the signals in the time domain. Our results demonstrate that complex pump-related processes should always be considered in the experimental setup and data analysis.
△ Less
Submitted 5 February, 2015;
originally announced February 2015.
-
The momentum and photon energy dependence of the circular dichroic photoemission in the bulk Rashba semiconductors BiTeX (X = I, Br, Cl)
Authors:
A. Crepaldi,
F. Cilento,
M. Zacchigna,
M. Zonno,
J. C. Johannsen,
C. Tournier-Colletta,
L. Moreschini,
I. Vobornik,
F. Bondino,
E. Magnano,
H. Berger,
A. Magrez,
Ph. Bugnon,
G. Autés,
O. V. Yazyev,
M. Grioni,
F. Parmigiani
Abstract:
Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for develo** spintronics devices, because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need of studying the spin texture of strongly spin-orbit coupled materials has recently promoted circular dichroic Angular Resolved Photoelectron Sp…
▽ More
Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for develo** spintronics devices, because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need of studying the spin texture of strongly spin-orbit coupled materials has recently promoted circular dichroic Angular Resolved Photoelectron Spectroscopy (cd-ARPES) as an indirect tool to measure the spin and the angular degrees of freedom. Here we report a detailed photon energy dependent study of the cd-ARPES spectra in BiTeX (X = I, Br and Cl). Our work reveals a large variation of the magnitude and sign of the dichroism. Interestingly, we find that the dichroic signal modulates differently for the three compounds and for the different spin-split states. These findings show a momentum and photon energy dependence for the cd-ARPES signals in the bulk Rashba semiconductor BiTeX (X = I, Br, Cl). Finally, the outcome of our experiment indicates the important relation between the modulation of the dichroism and the phase differences between the wave-functions involved in the photoemission process. This phase difference can be due to initial or final state effects. In the former case the phase difference results in possible interference effects among the photo-electrons emitted from different atomic layers and characterized by entangled spin-orbital polarized bands. In the latter case the phase difference results from the relative phases of the expansion of the final state in different outgoing partial waves.
△ Less
Submitted 17 September, 2014;
originally announced September 2014.
-
Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Federico Cilento,
Jill A. Miwa,
Alberto Crepaldi,
Michele Zacchigna,
Cephise Cacho,
Richard Chapman,
Emma Springate,
Samir Mammadov,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Fulvio Parmigiani,
Marco Grioni,
Phil D. C. King,
Philip Hofmann
Abstract:
Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by to…
▽ More
Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by topological in-gap states, or that the electronic structure could be altogether changed by many-body effects. Here we directly follow the excited carriers in bilayer graphene on a femtosecond time scale, using ultrafast time- and angle-resolved photoemission. We find a behavior consistent with a single-particle band gap. Compared to monolayer graphene, the existence of this band gap leads to an increased carrier lifetime in the minimum of the lowest conduction band. This is in sharp contrast to the second sub-state of the conduction band, in which the excited electrons decay through fast, phonon-assisted inter-band transitions.
△ Less
Submitted 1 March, 2014;
originally announced March 2014.
-
Extracting the Temperature of Hot Carriers in Time- and Angle-Resolved Photoemission
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Marco Grioni,
Philip Hofmann
Abstract:
The interaction of light with a material's electronic system creates an out-of-equilibrium (non-thermal) distribution of optically excited electrons. Non-equilibrium dynamics relaxes this distribution on an ultrafast timescale to a hot Fermi-Dirac distribution with a well-defined temperature. The advent of time- and angle-resolved photoemission spectroscopy (TR-ARPES) experiments has made it possi…
▽ More
The interaction of light with a material's electronic system creates an out-of-equilibrium (non-thermal) distribution of optically excited electrons. Non-equilibrium dynamics relaxes this distribution on an ultrafast timescale to a hot Fermi-Dirac distribution with a well-defined temperature. The advent of time- and angle-resolved photoemission spectroscopy (TR-ARPES) experiments has made it possible to track the decay of the temperature of the excited hot electrons in selected states in the Brillouin zone, and to reveal their cooling in unprecedented detail in a variety of emerging materials. It is, however, not a straightforward task to determine the temperature with high accuracy. This is mainly attributable to an a priori unknown position of the Fermi level and the fact that the shape of the Fermi edge can be severely perturbed when the state in question is crossing the Fermi energy. Here, we introduce a method that circumvents these difficulties and accurately extracts both the temperature and the position of the Fermi level for a hot carrier distribution by tracking the occupation statistics of the carriers measured in a TR-ARPES experiment.
△ Less
Submitted 26 February, 2014;
originally announced February 2014.
-
Evidence of reduced surface electron-phonon scattering in the conduction band of Bi_{2}Se_{3} by non-equilibrium ARPES
Authors:
A. Crepaldi,
F. Cilento,
B. Ressel,
C. Cacho,
J. C. Johannsen,
M. Zacchigna,
H. Berger,
Ph. Bugnon,
C. Grazioli,
I. C. E. Turcu,
E. Springate,
K. Kern,
M. Grioni,
F. Parmigiani
Abstract:
The nature of the Dirac quasiparticles in topological insulators calls for a direct investigation of the electron-phonon scattering at the \emph{surface}. By comparing time-resolved ARPES measurements of the TI Bi_{2}Se_{3} with different probing depths we show that the relaxation dynamics of the electronic temperature of the conduction band is much slower at the surface than in the bulk. This obs…
▽ More
The nature of the Dirac quasiparticles in topological insulators calls for a direct investigation of the electron-phonon scattering at the \emph{surface}. By comparing time-resolved ARPES measurements of the TI Bi_{2}Se_{3} with different probing depths we show that the relaxation dynamics of the electronic temperature of the conduction band is much slower at the surface than in the bulk. This observation suggests that surface phonons are less effective in cooling the electron gas in the conduction band.
△ Less
Submitted 16 October, 2013;
originally announced October 2013.
-
Direct view on the ultrafast carrier dynamics in graphene
Authors:
Jens Christian Johannsen,
Søren Ulstrup,
Federico Cilento,
Alberto Crepaldi,
Michele Zacchigna,
Cephise Cacho,
I. C. Edmond Turcu,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. While the hot carrier dynamics in graphene co…
▽ More
The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. While the hot carrier dynamics in graphene could so far only be accessed indirectly, we here present a direct time-resolved view on the Dirac cone by angle-resolved photoemission (ARPES). This allows us to show the quasi-instant thermalisation of the electron gas to a temperature of more than 2000 K; to determine the time-resolved carrier density; to disentangle the subsequent decay into excitations of optical phonons and acoustic phonons (directly and via supercollisions); and to show how the presence of the hot carrier distribution affects the lifetime of the states far below the Fermi energy.
△ Less
Submitted 9 April, 2013;
originally announced April 2013.
-
Electron-phonon coupling in quasi free-standing graphene
Authors:
Jens Christian Johannsen,
Søren Ulstrup,
Marco Bianchi,
Richard Hatch,
Dandan Guan,
Federico Mazzola,
Liv Hornekær,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Philip Hofmann
Abstract:
Quasi free-standing monolayer graphene can be produced by intercalating species like oxygen or hydrogen between epitaxial graphene and the substrate crystal. If the graphene is indeed decoupled from the substrate, one would expect the observation of a similar electronic dispersion and many-body effects, irrespective of the substrate and the material used to achieve the decoupling. Here we investig…
▽ More
Quasi free-standing monolayer graphene can be produced by intercalating species like oxygen or hydrogen between epitaxial graphene and the substrate crystal. If the graphene is indeed decoupled from the substrate, one would expect the observation of a similar electronic dispersion and many-body effects, irrespective of the substrate and the material used to achieve the decoupling. Here we investigate the electron-phonon coupling in two different types of quasi free-standing monolayer graphene: decoupled from SiC via hydrogen intercalation and decoupled from Ir via oxygen intercalation. Both systems show a similar overall behaviour of the self-energy and a weak renormalization of the bands near the Fermi energy. The electron-phonon coupling is found to be sufficiently weak to make the precise determination of the coupling constant lambda through renormalization difficult. The estimated value of lambda is 0.05(3) for both systems.
△ Less
Submitted 5 October, 2012;
originally announced October 2012.
