Showing 1–17 of 17 results for author: Jo, J Y

Optically Induced Picosecond Lattice Compression in the Dielectric Component of a Strongly Coupled Ferroelectric/Dielectric Superlattice

Authors: Deepankar Sri Gyan, Hyeon Jun Lee, Youngjun Ahn, Jerome Carnis, Tae Yeon Kim, Sanjith Unithrattil, Jun Young Lee, Sae Hwan Chun, Sunam Kim, Intae Eom, Minseok Kim, Sang-Youn Park, Kyung Sook Kim, Ho Nyung Lee, Ji Young Jo, Paul G. Evans

Abstract: Above-bandgap femtosecond optical excitation of a ferroelectric/dielectric BaTiO3/CaTiO3 superlattice leads to structural responses that are a consequence of the screening of the strong electrostatic coupling between the component layers. Time-resolved x-ray free-electron laser diffraction shows that the structural response to optical excitation includes a net lattice expansion of the superlattice… ▽ More Above-bandgap femtosecond optical excitation of a ferroelectric/dielectric BaTiO3/CaTiO3 superlattice leads to structural responses that are a consequence of the screening of the strong electrostatic coupling between the component layers. Time-resolved x-ray free-electron laser diffraction shows that the structural response to optical excitation includes a net lattice expansion of the superlattice consistent with depolarization-field screening driven by the photoexcited charge carriers. The depolarization-field-screening-driven expansion is separate from a photoacoustic pulse launched from the bottom electrode on which the superlattice was epitaxially grown. The distribution of diffracted intensity of superlattice x-ray reflections indicates that the depolarization-field-screening-induced strain includes a photoinduced expansion in the ferroelectric BaTiO3 and a contraction in CaTiO3. The magnitude of expansion in BaTiO3 layers is larger than the contraction in CaTiO3. The difference in the magnitude of depolarization-field-screening-driven strain in the BaTiO3 and CaTiO3 components can arise from the contribution of the oxygen octahedral rotation patterns at the BaTiO3/CaTiO3 interfaces to the polarization of CaTiO3. The depolarization-field-screening-driven polarization reduction in the CaTiO3 layers points to a new direction for the manipulation of polarization in the component layers of a strongly coupled ferroelectric/dielectric superlattice. △ Less

Submitted 3 November, 2022; originally announced November 2022.

Journal ref: Adv. Electron. Mater. 8, 2101051 (2022)

Structural evidence for ultrafast polarization rotation in ferroelectric/dielectric superlattice nanodomains

Authors: Hyeon Jun Lee, Youngjun Ahn, Samuel D. Marks, Eric C. Landahl, Shihao Zhuang, M. Humed Yusuf, Matthew Dawber, Jun Young Lee, Tae Yeon Kim, Sanjith Unithrattil, Sae Hwan Chun, Sunam Kim, Intae Eom, Sang-Yeon Park, Kyung Sook Kim, Sooheyong Lee, Ji Young Jo, Jiamian Hu, Paul G. Evans

Abstract: Weakly coupled ferroelectric/dielectric superlattice thin film heterostructures exhibit complex nanoscale polarization configurations that arise from a balance of competing electrostatic, elastic, and domain-wall contributions to the free energy. A key feature of these configurations is that the polarization can locally have a significant component that is not along the thin-film surface normal di… ▽ More Weakly coupled ferroelectric/dielectric superlattice thin film heterostructures exhibit complex nanoscale polarization configurations that arise from a balance of competing electrostatic, elastic, and domain-wall contributions to the free energy. A key feature of these configurations is that the polarization can locally have a significant component that is not along the thin-film surface normal direction, while maintaining zero net in-plane polarization. PbTiO3/SrTiO3 thin-film superlattice heterostructures on a conducting SrRuO3 bottom electrode on SrTiO3 have a room-temperature stripe nanodomain pattern with nanometer-scale lateral period. Ultrafast time-resolved x-ray free electron laser diffraction and scattering experiments reveal that above-bandgap optical pulses induce rapidly propagating acoustic pulses and a perturbation of the domain diffuse scattering intensity arising from the nanoscale stripe domain configuration. With 400 nm optical excitation, two separate acoustic pulses are observed: a high-amplitude pulse resulting from strong optical absorption in the bottom electrode and a weaker pulse arising from the depolarization field screening effect due to absorption directly within the superlattice. The picosecond scale variation of the nanodomain diffuse scattering intensity is consistent with a larger polarization change than would be expected due to the polarization-tetragonality coupling of uniformly polarized ferroelectrics. The polarization change is consistent instead with polarization rotation facilitated by the reorientation of the in-plane component of the polarization at the domain boundaries of the striped polarization structure. The complex steady-state configuration within these ferroelectric heterostructures leads to polarization rotation phenomena that have been previously available only through the selection of bulk crystal composition. △ Less

Submitted 8 July, 2021; v1 submitted 6 July, 2021; originally announced July 2021.

Non-thermal fluence threshold for femtosecond pulsed x-ray radiation damage in perovskite complex oxide epitaxial heterostructures

Authors: Hyeon Jun Lee, Youngjun Ahn, Samuel D. Marks, Eric C. Landahl, Jun Young Lee, Tae Yeon Kim, Sanjith Unithrattil, Ji Young Jo, Sae Hwan Chun, Sunam Kim, Sang-Yeon Park, Intae Eom, Carolina Adamo, Darrell G. Schlom, Haidan Wen, Paul G. Evans

Abstract: Intense hard x-ray pulses from a free-electron laser induce irreversible structural damage in a perovskite oxide epitaxial heterostructure when pulse fluences exceed a threshold value. The intensity of x-ray diffraction from a 25-nm thick epitaxial BiFeO$_{3}$ layer on a SrTiO$_{3}$ substrate measured using a series of pulses decreases abruptly with a per-pulse fluence of 2.7 x 10$^{6}$ photons… ▽ More Intense hard x-ray pulses from a free-electron laser induce irreversible structural damage in a perovskite oxide epitaxial heterostructure when pulse fluences exceed a threshold value. The intensity of x-ray diffraction from a 25-nm thick epitaxial BiFeO$_{3}$ layer on a SrTiO$_{3}$ substrate measured using a series of pulses decreases abruptly with a per-pulse fluence of 2.7 x 10$^{6}$ photons $μ$m$^{-2}$ at 9.7 keV photon energy, but remains constant for 1.3 x 10$^{6}$ photons $μ$m$^{-2}$ or less. The damage resulted in the destruction of the BiFeO$_{3}$ thin film within the focal spot area and the formation of a deep cavity penetrating into the STO substrate via the removal of tens of nanometers of material per pulse. The damage threshold occurs at a fluence that is insufficient to heat the absorption volume to the melting point. The morphology of the ablated sample is consistent with fracture rather than melting. Together these results indicate that the damage occurs via a non-thermal process consistent with ultrafast ionization of the absorption volume. △ Less

Submitted 10 December, 2019; v1 submitted 6 December, 2019; originally announced December 2019.

Comments: The following article has been accepted by Applied Physics Letters

Ferroelectric polarization rotation in order-disorder-type LiNbO3 thin films

Authors: Tae Sup Yoo, Sang A Lee, Changjae Roh, Seunghun Kang, Daehee Seol, Xinwei Guan, Jong-Seong Bae, Jiwoong Kim, Young-Min Kim, Hu Young Jeong, Seunggyo Jeong, Ahmed Yousef Mohamed, Deok-Yong Cho, Ji Young Jo, Sungkyun Park, Tom Wu, Yunseok Kim, Jongseok Lee, Woo Seok Choi

Abstract: The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important dielectric phenomena such as piezoelectric response near the morphotropic phase boundaries and practical applications such as ferroelectric memory. In this study, we rep… ▽ More The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important dielectric phenomena such as piezoelectric response near the morphotropic phase boundaries and practical applications such as ferroelectric memory. In this study, we report the observation of continuous rotation of ferroelectric polarization in order-disorder type LiNbO3 thin films. The spontaneous polarization could be tilted from an out-of-plane to an in-plane direction in the thin film by controlling the Li vacancy concentration within the hexagonal lattice framework. Partial inclusion of monoclinic-like phase is attributed to the breaking of macroscopic inversion symmetry along different directions and the emergence of ferroelectric polarization along the in-plane direction. △ Less

Submitted 7 December, 2018; originally announced December 2018.

Comments: 38 pages, 12 figures

Nanosecond Phase Transition Dynamics in Compressively Strained Epitaxial BiFeO3

Authors: Margaret P. Cosgriff, Pice Chen, Sung Su Lee, Hyeon Jun Lee, Lukasz Kuna, Krishna C. Pitike, Lydie Louis, William D. Parker, Hiroo Tajiri, Serge M. Nakhmanson, Ji Young Jo, Zuhuang Chen, Lang Chen, Paul G. Evans

Abstract: A highly strained BiFeO3 (BFO) thin film is transformed between phases with distinct structures and properties by nanosecond-duration applied electric field pulses. Time-resolved synchrotron x-ray microdiffraction shows that the steady-state transformation between phases is accompanied by a dynamical component that is reversed upon the removal of the field. Steady-state measurements reveal that ap… ▽ More A highly strained BiFeO3 (BFO) thin film is transformed between phases with distinct structures and properties by nanosecond-duration applied electric field pulses. Time-resolved synchrotron x-ray microdiffraction shows that the steady-state transformation between phases is accompanied by a dynamical component that is reversed upon the removal of the field. Steady-state measurements reveal that approximately 20% of the volume of a BFO thin film grown on a LaAlO3 substrate can be reproducibly transformed between rhombohedral-like and tetragonal-like phases by electric field pulses with magnitudes up to 2 MV/cm. A transient component, in which the transformation is reversed following the end of the electric field pulse, can transform a similar fraction of the BFO layer and occurs rapidly time scale limited by the charging time constant of the thin film capacitor. The piezoelectric expansion of the tetragonal-like phase leads to a strain of up to 0.1%, with a lower limit of 10 pm/V for the piezoelectric coefficient of this phase. Density functional theory calculations provide insight into the mechanism of the phase transformation showing that imparting a transient strain of this magnitude favors a transformation from rhombohedral-like to tetragonal-like phase. △ Less

Submitted 30 October, 2015; originally announced October 2015.

Piezoelectricity in the dielectric component of nanoscale dielectric/ferroelectric superlattices

Authors: Ji Young Jo, Rebecca J. Sichel, Ho Nyung Lee, Serge M. Nakhmanson, Eric M. Dufresne, Paul G. Evans

Abstract: The origin of the functional properties of complex oxide superlattices can be resolved using time-resolved synchrotron x-ray diffraction into contributions from the component layers making up the repeating unit. The CaTiO3 layers of a CaTiO3/BaTiO3 superlattice have a piezoelectric response to an applied electric field, consistent with a large continuous polarization throughout the superlattice. T… ▽ More The origin of the functional properties of complex oxide superlattices can be resolved using time-resolved synchrotron x-ray diffraction into contributions from the component layers making up the repeating unit. The CaTiO3 layers of a CaTiO3/BaTiO3 superlattice have a piezoelectric response to an applied electric field, consistent with a large continuous polarization throughout the superlattice. The overall piezoelectric coefficient at large strains, 54 pm/V, agrees with first-principles predictions in which a tetragonal symmetry is imposed on the superlattice by the SrTiO3 substrate. △ Less

Submitted 9 May, 2010; originally announced May 2010.

Comments: 4 figures

Unveiling the ac Dynamics of Ferroelectric Domains by Investigating the Frequency Dependence of Hysteresis Loops

Authors: S. M. Yang, J. Y. Jo, T. H. Kim, J. -G. Yoon, T. K. Song, H. N. Lee, Z. Marton, S. Park, Y. Jo, T. W. Noh

Abstract: We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally activated creep motion at lower frequencies, and by viscous flow motion at higher frequencies. The dynamic crossover between the creep and flow regimes unveils t… ▽ More We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally activated creep motion at lower frequencies, and by viscous flow motion at higher frequencies. The dynamic crossover between the creep and flow regimes unveils two frequency-dependent scaling regions of hysteresis loops. Based on these findings, we constructed a dynamic phase diagram for hysteretic ferroelectric domain dynamics in the presence of ac fields. △ Less

Submitted 28 January, 2010; originally announced January 2010.

Comments: 3 figures

Nonlinear Dynamics of Domain Wall Propagation in Epitaxial Ferroelectric Thin Films

Authors: J. Y. Jo, S. M. Yang, T. H. Kim, H. N. Lee, J. -G. Yoon, S. Park, Y. Jo, M. H. Jung, T. W. Noh

Abstract: We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under various electric fields and found that the velocity data is strongly nonlinear with electric fields, especially at low temperature. We found that, as one of surface growth problems, our domain wall velocity data from f… ▽ More We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under various electric fields and found that the velocity data is strongly nonlinear with electric fields, especially at low temperature. We found that, as one of surface growth problems, our domain wall velocity data from ferroelectric epitaxial film could be classified into the creep, depinning, and flow regimes due to competition between disorder and elasticity. The measured values of velocity and dynamical exponents indicate that the ferroelectric domain walls in the epitaxial films are fractal and pinned by a disorder-induced local field. △ Less

Submitted 28 January, 2009; originally announced January 2009.

Comments: 4 pages, 4 figures

Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy

Authors: S. M. Yang, J. Y. Jo, D. J. Kim, H. Sung, T. W. Noh, H. N. Lee, J. -G. Yoon, T. K. Song

Abstract: We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size. We also observed that the average value of v,… ▽ More We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size. We also observed that the average value of v, obtained under applied electric field (Eapp),showed creep behavior: i.e. <v> ~ exp(-E0/Eapp)^$μ$ with an exponent $μ$ of 0.9 $\pm$ 0.1 and an activation field E0 of about 700 kV/cm. △ Less

Submitted 21 May, 2008; originally announced May 2008.

Comments: 11 pages, 4 figures

Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films

Authors: J. Y. Jo, S. M. Yang, H. S. Han, D. J. Kim, W. S. Choi, T. W. Noh, T. K. Song, J. -G. Yoon, C. -Y. Koo, J. -H. Cheon, S. -H. Kim

Abstract: We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [Refer to J. Y. Jo et al., Phys. Rev. Lett. (in press)]. Based on this analysis, we found… ▽ More We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [Refer to J. Y. Jo et al., Phys. Rev. Lett. (in press)]. Based on this analysis, we found that the Zr ion-substitution for Ti ions would induce broad distributions in the local field due to defect dipoles, which makes the ferroelectric domain switching occur more easily. △ Less

Submitted 20 November, 2007; v1 submitted 22 October, 2007; originally announced October 2007.

Comments: 7 pages, 3 figures

Ferroelectricity in artificial bicolor oxide superlattices

Authors: Sung Seok A. Seo, Jun Hee Lee, Ho Nyung Lee, Matthew F. Chisholm, Woo Seok Choi, Dong Jik Kim, Ji Young Jo, Hanchul Kim, Jaejun Yu, Tae Won Noh

Abstract: We report on the growth and properties of high quality bicolor oxide superlattices, composed of two perovskites out of BaTiO3, CaTiO3, and SrTiO3. The artificially grown superlattices are structurally unique and have a macroscopically homogeneous phase, which is not feasible to recreate in bulk form. By artificial structuring, it is found that the polarization of such superlattices can be highly… ▽ More We report on the growth and properties of high quality bicolor oxide superlattices, composed of two perovskites out of BaTiO3, CaTiO3, and SrTiO3. The artificially grown superlattices are structurally unique and have a macroscopically homogeneous phase, which is not feasible to recreate in bulk form. By artificial structuring, it is found that the polarization of such superlattices can be highly increased as compared to pseudo-binary ceramics with the same overall composition. Such strong enhancement in superlattice is attributed to newly-developed ionic motions of A-site cations at the hetero-interfaces due to the interfacial coupling of electrostatic and elastic interactions, which cannot be found in single phase materials. △ Less

Submitted 12 September, 2007; originally announced September 2007.

Comments: 15 pages, 4 figures

Journal ref: Advanced Materials 19, 2460 (2007)

Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors

Authors: D. J. Kim, J. Y. Jo, T. H. Kim, S. M. Yang, B. Chen, Y. S. Kim, T. W. Noh

Abstract: We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors under a modified piezoresponse force microscope. We obtained domain evolution images during polarization switching process and observed that domain nucleation occurs at particular sites. This inhomogeneous nucleation process should play an important role in an early stage of switching and under a high electric field. W… ▽ More We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors under a modified piezoresponse force microscope. We obtained domain evolution images during polarization switching process and observed that domain nucleation occurs at particular sites. This inhomogeneous nucleation process should play an important role in an early stage of switching and under a high electric field. We found that the number of nuclei is linearly proportional to log(switching time), suggesting a broad distribution of activation energies for nucleation. The nucleation sites for a positive bias differ from those for a negative bias, indicating that most nucleation sites are located at ferroelectric/electrode interfaces. △ Less

Submitted 15 September, 2007; v1 submitted 25 July, 2007; originally announced July 2007.

Domain Switching Kinetics in Disordered Ferroelectric Thin Films

Authors: J. Y. Jo, H. S. Han, J. -G. Yoon, T. K. Song, S. -H. Kim, T. W. Noh

Abstract: We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and temperatures could be explained by assuming the Lorentzian distribution of domain switching times. We viewed the switching process under an electric field as a m… ▽ More We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and temperatures could be explained by assuming the Lorentzian distribution of domain switching times. We viewed the switching process under an electric field as a motion of the ferroelectric domain through a random medium, and we showed that the local field variation due to dipole defects at domain pinning sites could explain the intriguing distribution. △ Less

Submitted 8 April, 2007; originally announced April 2007.

Comments: 4 pages and 4 figures

Coercive fields in ultrathin BaTiO3 capacitors

Authors: J. Y. Jo, Y. S. Kim, T. W. Noh, Jong-Gul Yoon, T. K. Song

Abstract: Thickness-dependence of coercive field (EC) was investigated in ultrathin BaTiO3 capacitors with thicknesses (d) between 30 and 5 nm. The EC appears nearly independent of d below 15 nm, and decreases slowly as d increases above 15 nm. This behavior cannot be explained by extrinsic effects, such as interfacial passive layers or strain relaxation, nor by homogeneous domain models. Based on domain… ▽ More Thickness-dependence of coercive field (EC) was investigated in ultrathin BaTiO3 capacitors with thicknesses (d) between 30 and 5 nm. The EC appears nearly independent of d below 15 nm, and decreases slowly as d increases above 15 nm. This behavior cannot be explained by extrinsic effects, such as interfacial passive layers or strain relaxation, nor by homogeneous domain models. Based on domain nuclei formation model, the observed EC behavior is explainable via a quantitative level. A crossover of domain shape from a half-prolate spheroid to a cylinder is also suggested at d~ 15 nm, exhibiting good agreement with experimental results. △ Less

Submitted 4 September, 2006; originally announced September 2006.

Comments: 10 pages, 3 figures

Polarization Switching Dynamics Governed by Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films

Authors: J. Y. Jo, D. J. Kim, Y. S. Kim, S. -B. Choe, T. K. Song, J. -G. Yoon, T. W. Noh

Abstract: A long standing problem of domain switching process - how domains nucleate - is examined in ultrathin ferroelectric films. We demonstrate that the large depolarization fields in ultrathin films could significantly lower the nucleation energy barrier (U*) to a level comparable to thermal energy (kBT), resulting in power-law like polarization decay behaviors. The "Landauer's paradox": U* is therma… ▽ More A long standing problem of domain switching process - how domains nucleate - is examined in ultrathin ferroelectric films. We demonstrate that the large depolarization fields in ultrathin films could significantly lower the nucleation energy barrier (U*) to a level comparable to thermal energy (kBT), resulting in power-law like polarization decay behaviors. The "Landauer's paradox": U* is thermally insurmountable is not a critical issue in the polarization switching of ultrathin ferroelectric films. We empirically find a universal relation between the polarization decay behavior and U*/kBT. △ Less

Submitted 3 May, 2006; originally announced May 2006.

Comments: 5 pages, 4 figures

Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive lay

Authors: Y. S. Kim, J. Y. Jo, D. J. Kim, Y. J. Chang, J. H. Lee, T. W. Noh, T. K. Song, J. -G. Yoon, J. -S. Chung, S. I. Baik, Y. -W. Kim, C. U. Chung

Abstract: Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and electrode SrRuO3 layers. In these capacitors, we cannot observe any extrinsic electrical effects due to either the formation of an insulating interfacial passive layer or passive-layer-induced charge injection. Such high… ▽ More Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and electrode SrRuO3 layers. In these capacitors, we cannot observe any extrinsic electrical effects due to either the formation of an insulating interfacial passive layer or passive-layer-induced charge injection. Such high quality interfaces result in very good fatigue endurance, even for the 5 nm thick BaTiO3 capacitor. △ Less

Submitted 20 June, 2005; originally announced June 2005.

Comments: 8 pages, 4 figures

Polarization Relaxation Induced by Depolarization Field in Ultrathin Ferroelectric BaTiO$_3$ Capacitors

Authors: D. J. Kim, J. Y. Jo, Y. S. Kim, Y. J. Chang, J. S. Lee, Jong-Gul Yoon, T. K. Song, T. W. Noh

Abstract: Time-dependent polarization relaxation behaviors induced by a depolarization field $E_{d}$ were investigated on high-quality ultrathin SrRuO$_{3}$/BaTiO$_{3}$/SrRuO$_{3}$ capacitors. The $E_d$ values were determined experimentally from an applied external field to stop the net polarization relaxation. These values agree with those from the electrostatic calculations, demonstrating that a large… ▽ More Time-dependent polarization relaxation behaviors induced by a depolarization field $E_{d}$ were investigated on high-quality ultrathin SrRuO$_{3}$/BaTiO$_{3}$/SrRuO$_{3}$ capacitors. The $E_d$ values were determined experimentally from an applied external field to stop the net polarization relaxation. These values agree with those from the electrostatic calculations, demonstrating that a large $E_{d}$ inside the ultrathin ferroelectric layer could cause severe polarization relaxation. For numerous ferroelectric devices of capacitor configuration, this effect will set a stricter size limit than the critical thickness issue. △ Less

Submitted 13 October, 2005; v1 submitted 20 June, 2005; originally announced June 2005.