Showing 1–10 of 10 results for author: Jirovec, D

Universal control of four singlet-triplet qubits

Authors: Xin Zhang, Elizaveta Morozova, Maximilian Rimbach-Russ, Daniel Jirovec, Tzu-Kan Hsiao, Pablo Cova Fariña, Chien-An Wang, Stefan D. Oosterhout, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Lieven M. K. Vandersypen

Abstract: The coherent control of interacting spins in semiconductor quantum dots is of strong interest for quantum information processing as well as for studying quantum magnetism from the bottom up. On paper, individual spin-spin couplings can be independently controlled through gate voltages, but nonlinearities and crosstalk introduce significant complexity that has slowed down progress in past years. He… ▽ More The coherent control of interacting spins in semiconductor quantum dots is of strong interest for quantum information processing as well as for studying quantum magnetism from the bottom up. On paper, individual spin-spin couplings can be independently controlled through gate voltages, but nonlinearities and crosstalk introduce significant complexity that has slowed down progress in past years. Here, we present a $2\times4$ germanium quantum dot array with full and controllable interactions between nearest-neighbor spins. As a demonstration of the level of control, we define four singlet-triplet qubits in this system and show two-axis single-qubit control of all qubits and SWAP-style two-qubit gates between all neighbouring qubit pairs. Combining these operations, we experimentally implement a circuit designed to generate and distribute entanglement across the array. These results highlight the potential of singlet-triplet qubits as a competing platform for quantum computing and indicate that scaling up the control of quantum dot spins in extended bilinear arrays can be feasible. △ Less

Submitted 27 December, 2023; v1 submitted 26 December, 2023; originally announced December 2023.

Comments: 10 pages, 4 figures

Automated long-range compensation of an rf quantum dot sensor

Authors: Joseph Hickie, Barnaby van Straaten, Federico Fedele, Daniel Jirovec, Andrea Ballabio, Daniel Chrastina, Giovanni Isella, Georgios Katsaros, Natalia Ares

Abstract: Charge sensing is a sensitive technique for probing quantum devices, of particular importance for spin qubit readout. To achieve good readout sensitivities, the proximity of the charge sensor to the device to be measured is a necessity. However, this proximity also means that the operation of the device affects, in turn, the sensor tuning and ultimately the readout sensitivity. We present an appro… ▽ More Charge sensing is a sensitive technique for probing quantum devices, of particular importance for spin qubit readout. To achieve good readout sensitivities, the proximity of the charge sensor to the device to be measured is a necessity. However, this proximity also means that the operation of the device affects, in turn, the sensor tuning and ultimately the readout sensitivity. We present an approach for compensating for this cross-talk effect allowing for the gate voltages of the measured device to be swept in a 1 V x 1 V window while maintaining a sensor configuration chosen by a Bayesian optimiser. Our algorithm is a key contribution to the suite of fully automated solutions required for the operation of large quantum device architectures. △ Less

Submitted 3 October, 2023; originally announced October 2023.

Exciton transport in a germanium quantum dot ladder

Authors: T. -K. Hsiao, P. Cova Fariña, S. D. Oosterhout, D. Jirovec, X. Zhang, C. J. van Diepen, W. I. L. Lawrie, C. -A. Wang, A. Sammak, G. Scappucci, M. Veldhorst, E. Demler, L. M. K. Vandersypen

Abstract: Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for quantum simulation of generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter physics. In this work, we employ a g… ▽ More Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for quantum simulation of generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter physics. In this work, we employ a germanium 4$\times$2 quantum dot array and show that the naturally occurring long-range Coulomb interaction can lead to exciton formation and transport. We tune the quantum dot ladder into two capacitively-coupled channels and exploit Coulomb drag to probe the binding of electrons and holes. Specifically, we shuttle an electron through one leg of the ladder and observe that a hole is dragged along in the second leg under the right conditions. This corresponds to a transition from single-electron transport in one leg to exciton transport along the ladder. Our work paves the way for the study of excitonic states of matter in quantum dot arrays. △ Less

Submitted 5 July, 2023; originally announced July 2023.

Comments: 15 pages and 13 figures

Journal ref: Phys. Rev. X 14, 011048 (2024)

All rf-based tuning algorithm for quantum devices using machine learning

Authors: Barnaby van Straaten, Federico Fedele, Florian Vigneau, Joseph Hickie, Daniel Jirovec, Andrea Ballabio, Daniel Chrastina, Giovanni Isella, Georgios Katsaros, Natalia Ares

Abstract: Radio-frequency measurements could satisfy DiVincenzo's readout criterion in future large-scale solid-state quantum processors, as they allow for high bandwidths and frequency multiplexing. However, the scalability potential of this readout technique can only be leveraged if quantum device tuning is performed using exclusively radio-frequency measurements i.e. without resorting to current measurem… ▽ More Radio-frequency measurements could satisfy DiVincenzo's readout criterion in future large-scale solid-state quantum processors, as they allow for high bandwidths and frequency multiplexing. However, the scalability potential of this readout technique can only be leveraged if quantum device tuning is performed using exclusively radio-frequency measurements i.e. without resorting to current measurements. We demonstrate an algorithm that automatically tunes double quantum dots using only radio-frequency reflectometry. Exploiting the high bandwidth of radio-frequency measurements, the tuning was completed within a few minutes without prior knowledge about the device architecture. Our results show that it is possible to eliminate the need for transport measurements for quantum dot tuning, paving the way for more scalable device architectures. △ Less

Submitted 8 November, 2022; originally announced November 2022.

Dynamics of hole singlet triplet qubits with large g-factor differences

Authors: Daniel Jirovec, Philipp M. Mutter, Andrea Hofmann, Josip Kukucka, Alessandro Crippa, Frederico Martins, Andrea Ballabio, Daniel Chrastina, Giovanni Isella, Guido Burkard, Georgios Katsaros

Abstract: The spin-orbit interaction is the key element for electrically tunable spin qubits. Here we probe the effect of cubic Rashba spin-orbit interaction on mixing of the spin states by investigating singlet-triplet oscillations in a planar Ge hole double quantum dot. By varying the magnetic field direction we find an intriguing transformation of the funnel into a butterfly-shaped pattern. Landau-Zener… ▽ More The spin-orbit interaction is the key element for electrically tunable spin qubits. Here we probe the effect of cubic Rashba spin-orbit interaction on mixing of the spin states by investigating singlet-triplet oscillations in a planar Ge hole double quantum dot. By varying the magnetic field direction we find an intriguing transformation of the funnel into a butterfly-shaped pattern. Landau-Zener sweeps disentangle the Zeeman mixing effect from the spin-orbit induced coupling and show that large singlet-triplet avoided crossings do not imply a strong spin-orbit interaction. Our work emphasizes the need for a complete knowledge of the energy landscape when working with hole spin qubits. △ Less

Submitted 9 November, 2021; originally announced November 2021.

Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning

Authors: B. Severin, D. T. Lennon, L. C. Camenzind, F. Vigneau, F. Fedele, D. Jirovec, A. Ballabio, D. Chrastina, G. Isella, M. de Kruijf, M. J. Carballido, S. Svab, A. V. Kuhlmann, F. R. Braakman, S. Geyer, F. N. M. Froning, H. Moon, M. A. Osborne, D. Sejdinovic, G. Katsaros, D. M. Zumbühl, G. A. D. Briggs, N. Ares

Abstract: The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scra… ▽ More The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning. △ Less

Submitted 27 July, 2021; originally announced July 2021.

Enhancement of Proximity Induced Superconductivity in a Planar Ge Hole Gas

Authors: Kushagra Aggarwal, Andrea Hofmann, Daniel Jirovec, Ivan Prieto, Amir Sammak, Marc Botifoll, Sara Marti-Sanchez, Menno Veldhorst, Jordi Arbiol, Giordano Scappucci, Jeroen Danon, Georgios Katsaros

Abstract: Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust ag… ▽ More Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large \IcRn \ products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 Tesla paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip. △ Less

Submitted 19 February, 2021; v1 submitted 1 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Research 3, 022005 (2021)

A singlet triplet hole spin qubit in planar Ge

Authors: Daniel Jirovec, Andrea Hofmann, Andrea Ballabio, Philipp M. Mutter, Giulio Tavani, Marc Botifoll, Alessandro Crippa, Josip Kukucka, Oliver Sagi, Frederico Martins, Jaime Saez-Mollejo, Ivan Prieto, Maksim Borovkov, Jordi Arbiol, Daniel Chrastina, Giovanni Isella, Georgios Katsaros

Abstract: Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the c… ▽ More Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor-difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 $μ$s which we extend beyond 150 $μ$s with echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are on par with Ge single spin qubits, but they can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies. △ Less

Submitted 7 April, 2021; v1 submitted 27 November, 2020; originally announced November 2020.

Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits

Authors: Andrea Hofmann, Daniel Jirovec, Maxim Borovkov, Ivan Prieto, Andrea Ballabio, Jacopo Frigerio, Daniel Chrastina, Giovanni Isella, Georgios Katsaros

Abstract: We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In… ▽ More We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In conclusion, Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit. △ Less

Submitted 13 October, 2019; originally announced October 2019.

30 GHz-voltage controlled oscillator operating at 4 K

Authors: Arne Hollmann, Daniel Jirovec, Maciej Kucharski, Dietmar Kissinger, Gunter Fischer, Lars R. Schreiber

Abstract: Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here,… ▽ More Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and fan-out problems, microwave sources required for qubit manipulation might be embedded close to the qubit chip, typically operating at temperatures below 4 K. Here, we perform the first low temperature measurements of a 130 nm BiCMOS based SiGe voltage controlled oscillator. The device maintains its functionality from 300 K to 4 K. We determined the dependence of frequency and output power on temperature and magnetic field up to 5 T and measured the temperature influence on noise performance. While the output power tends to increase, the frequency shift is 3 % for temperature and 0.02 % for the field dependence, respectively, both relevant for highly coherent spin qubit applications. We observe no improvement on output noise, but increased output flickering. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Comments: 5 pages, 5 figures

Journal ref: Review of Scientific Instruments 89, 2018