Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy
Authors:
Hyunseok Kim,
Yunpeng Liu,
Kuangye Lu,
Celesta S. Chang,
Kuan Qiao,
Ki Seok Kim,
Bo-In Park,
Junseok Jeong,
Menglin Zhu,
Jun Min Suh,
Yongmin Baek,
You ** Ji,
Sungsu Kang,
Sangho Lee,
Ne Myo Han,
Chansoo Kim,
Chanyeol Choi,
Xinyuan Zhang,
Haozhe Wang,
Ling** Kong,
Jungwon Park,
Kyusang Lee,
Geun Young Yeom,
Sungkyu Kim,
**woo Hwang
, et al. (4 additional authors not shown)
Abstract:
Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to…
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Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to harvest epitaxial layers using practical processes. Here, we demonstrate a method to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, 2D materials are directly formed on III-N and III-V substrates in epitaxy systems, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of 2D materials and epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because 2D materials allow peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.
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Submitted 7 April, 2022;
originally announced April 2022.
Dissipation and decoherence induced by collective dephasing in coupled-qubit system with a common bath
Authors:
Z. H. Wang,
Y. J. Ji,
Yong Li,
D. L. Zhou
Abstract:
The longitudinal coupling of a system to the bath usually induces the pure dephasing of the system. In this paper, we study the collective dephasing induced dissipation and decoherence in a coupled-qubit system with a common bath. It is shown that, compared with the case of the same system with independent baths, the interference between the dephasing processes of different qubits induced by the c…
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The longitudinal coupling of a system to the bath usually induces the pure dephasing of the system. In this paper, we study the collective dephasing induced dissipation and decoherence in a coupled-qubit system with a common bath. It is shown that, compared with the case of the same system with independent baths, the interference between the dephasing processes of different qubits induced by the common bath significantly changes the dissipation of the system. For the system of two coupled qubits, the interference leads to a faster decoherence in the non-single-excitation subspaces and a slower dissipation (and decoherence) in the single-excitation subspace. For the system of multiple coupled qubits, we also find the slower dissipation in the single-excitation subspace and obtain the decay rates of the first excited states for different system sizes numerically. All our results on collective dephasing induced dissipation can be explained based on a simple model with Fermi's golden rule.
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Submitted 30 August, 2014;
originally announced September 2014.
