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Natural Language Processing for Drug Discovery Knowledge Graphs: promises and pitfalls
Authors:
J. Charles G. Jeynes,
Tim James,
Matthew Corney
Abstract:
Building and analysing knowledge graphs (KGs) to aid drug discovery is a topical area of research. A salient feature of KGs is their ability to combine many heterogeneous data sources in a format that facilitates discovering connections. The utility of KGs has been exemplified in areas such as drug repurposing, with insights made through manual exploration and modelling of the data. In this articl…
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Building and analysing knowledge graphs (KGs) to aid drug discovery is a topical area of research. A salient feature of KGs is their ability to combine many heterogeneous data sources in a format that facilitates discovering connections. The utility of KGs has been exemplified in areas such as drug repurposing, with insights made through manual exploration and modelling of the data. In this article, we discuss promises and pitfalls of using natural language processing (NLP) to mine unstructured text typically from scientific literature as a data source for KGs. This draws on our experience of initially parsing structured data sources such as ChEMBL as the basis for data within a KG, and then enriching or expanding upon them using NLP. The fundamental promise of NLP for KGs is the automated extraction of data from millions of documents a task practically impossible to do via human curation alone. However, there are many potential pitfalls in NLP-KG pipelines such as incorrect named entity recognition and ontology linking all of which could ultimately lead to erroneous inferences and conclusions.
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Submitted 24 October, 2023;
originally announced October 2023.
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Accurate experimental determination of Gallium K- and L3-shell XRF fundamental parameters
Authors:
Rainer Unterumsberger,
Philipp Hönicke,
Julien L. Colaux,
Chris Jeynes,
Malte Wansleben,
Matthias Müller,
Burkhard Beckhoff
Abstract:
The fluorescence yield of the K- and L3-shell of gallium was determined using the radiometrically calibrated (reference-free) X-ray fluorescence instrumentation at the BESSY II synchrotron radiation facility. Simultaneous transmission and fluorescence signals from GaSe foils were obtained, resulting in K- and L3-shell fluorescence yield values consistent with existing database values(omega_Ga_K=0.…
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The fluorescence yield of the K- and L3-shell of gallium was determined using the radiometrically calibrated (reference-free) X-ray fluorescence instrumentation at the BESSY II synchrotron radiation facility. Simultaneous transmission and fluorescence signals from GaSe foils were obtained, resulting in K- and L3-shell fluorescence yield values consistent with existing database values(omega_Ga_K=0.515 +- 0.019, omega_Ga_L3=0.013 +- 0.001). For the first time, these standard combined uncertainties are obtained from a properly constructed Uncertainty Budget. These K-shell fluorescence yield values support Bambynek's semi-empirical compilation from 1972: these and other measurements yield a combined recommended value of omega_Ga_K=0.514 +- 0.010. Using the measured fluorescence yields together with production yields from reference Ga-implanted samples where the quantity of implanted Ga was determined at 1.3% traceable accuracy by Rutherford backscattering spectrometry, the K-shell and L3-subshell photoionization cross sections at selected incident photon energies were also determined and compared critically with the standard databases.
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Submitted 8 May, 2018;
originally announced May 2018.
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Electrical properties of Bi-implanted amorphous chalcogenide films
Authors:
Yanina G. Fedorenko,
Mark A. Hughes,
Julien L. Colaux,
C. Jeynes,
Russell M. Gwilliam,
Kevin Homewood,
B. Gholipour,
J. Yao,
Daniel W. Hewak,
Tae-Hoon Lee,
Stephen R. Elliott,
Richard J. Curry
Abstract:
The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films…
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The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth.
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Submitted 9 December, 2014; v1 submitted 21 October, 2014;
originally announced October 2014.
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Towards truly simultaneous PIXE and RBS analysis of layered objects in cultural heritage
Authors:
C. Pascual-Izarra,
N. P. Barradas,
M. A. Reis,
C. Jeynes,
M. Menu,
B. Lavedrine,
J. J. Ezrati,
S. Röhrs
Abstract:
For a long time, RBS and PIXE techniques have been used in the field of cultural heritage. Although the complementarity of both techniques has long been acknowledged, its full potential has not been yet developed due to the lack of general purpose software tools for analysing the data from both techniques in a coherent way. In this work we provide an example of how the recent addition of PIXE to…
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For a long time, RBS and PIXE techniques have been used in the field of cultural heritage. Although the complementarity of both techniques has long been acknowledged, its full potential has not been yet developed due to the lack of general purpose software tools for analysing the data from both techniques in a coherent way. In this work we provide an example of how the recent addition of PIXE to the set of techniques supported by the DataFurnace code can significantly change this situation. We present a case in which a non homogeneous sample (an oxidized metal from a photographic plate -heliography- made by Niepce in 1827) is analysed using RBS and PIXE in a straightforward and powerful way that can only be performed with a code that treats both techniques simultaneously as a part of one single and coherent analysis. The optimization capabilities of DataFurnace, allowed us to obtain the composition profiles for these samples in a very simple way.
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Submitted 17 July, 2007;
originally announced July 2007.
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The effect of irradiation-induced disorder on the conductivity and critical temperature of the organic superconductor $κ$-(BEDT-TTF)$_2$Cu(SCN)$_2$
Authors:
James G. Analytis,
Arzhang Ardavan,
Stephen J. Blundell,
Robin L. Owen,
Elspeth F. Garman,
Chris Jeynes,
Ben J. Powell
Abstract:
We have introduced defects into clean samples of the organic superconductor $κ$-(BEDT-TTF)$_2$Cu(SCN)$_2$ in order to determine their effect on the temperature dependence of the conductivity and the critical temperature $T_{\rm c}$. We find a violation of Matthiessen's rule that can be explained by a model of the conductivity involving a defect-assisted interlayer channel which acts in parallel…
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We have introduced defects into clean samples of the organic superconductor $κ$-(BEDT-TTF)$_2$Cu(SCN)$_2$ in order to determine their effect on the temperature dependence of the conductivity and the critical temperature $T_{\rm c}$. We find a violation of Matthiessen's rule that can be explained by a model of the conductivity involving a defect-assisted interlayer channel which acts in parallel with the band-like conductivity. We observe an unusual dependence of $T_{\rm c}$ on residual resistivity which is not consistent with the generalised Abrikosov-Gor'kov theory for an order parameter with a single component, providing an important constraint on models of the superconductivity in this material.
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Submitted 16 December, 2005;
originally announced December 2005.
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Josephson effects in MgB2 meta masked ion damage junctions
Authors:
D. -J. Kang,
N. H. Peng,
R. Webb,
C. Jeynes,
J. H. Yun,
S. H. Moon,
D. Oh,
G. Burnell,
E. J. Tarte,
D. F. Moore,
M. G. Blamire
Abstract:
Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB$_{2}$ with T$_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB$_{2}$ metal masked ion damage junctions are presented. This…
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Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB$_{2}$ with T$_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB$_{2}$ metal masked ion damage junctions are presented. This technique is particularly useful for prototy** devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.
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Submitted 12 June, 2002;
originally announced June 2002.
