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Development of a thorium coating on an aluminium substrate by using electrodeposition method and alpha spectroscopy
Authors:
Dal-Ho Moon,
Vivek Chavan,
Vasant Bhoraskar,
Yeong Hoon Jeong,
Jung Ho Park,
Su-Jeong Suh,
Seung-Woo Hong
Abstract:
A thin coating of thorium on aluminium substrates with the areal density of 110 to 130 $μg/cm^2$ is developed over a circular area of 22 mm diameter by using the electrodeposition method. An electrodeposition system is fabricated to consist of three components; an anode made of a platinum mesh, a cylindrical-shape vessel to contain the thorium solution, and a cathode in the form of a circular alum…
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A thin coating of thorium on aluminium substrates with the areal density of 110 to 130 $μg/cm^2$ is developed over a circular area of 22 mm diameter by using the electrodeposition method. An electrodeposition system is fabricated to consist of three components; an anode made of a platinum mesh, a cylindrical-shape vessel to contain the thorium solution, and a cathode in the form of a circular aluminium plate. The aluminium plate is mounted horizontally, and the platinum mesh is connected to an axial rod of an electric motor, mounted vertically and normal to the plane of the aluminium. The electrolyte solution is prepared by dissolving a known-weight thorium nitrate powder in 0.8 M HNO3 and isopropanol. The system is operated either in constant voltage (CV) or constant current (CC) mode. Under the electric field between the anode and cathode, thorium ions were deposited on the aluminium substrate mounted on the cathode. In the CV mode at 320, 360, and 400 V and in the CC mode at 15 mA, thorium films were formed over a circular area of the aluminium substrate. The areal density of thorium coating was measured by detecting emitted alpha particles. The areal density of thorium varied from 80 to 130 $μg/cm^2$ by changing the deposition time from 10 to 60 min. The results from the CV mode and CC mode are compared, and the radial dependence in the measured areal density is discussed for different modes of the electric field. The developed thorium coatings are to be used in the in-house development of particle detectors, fast neutron converters, targets for thorium fission experiments, and other purposes.
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Submitted 11 March, 2023;
originally announced March 2023.
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Lattice dynamics and spin-phonon interaction in strained NiO films
Authors:
Alireza Kashir,
Veronica Goian,
Daseob Yoon,
Byeong-Gwan Cho,
Yoon Hee Jeong,
Gil-Ho Lee,
Stanislav Kamba
Abstract:
NiO thin films with various strains were grown on SrTiO3 (STO) and MgO substrates using a pulsed laser deposition technique. The films were characterized using an x-ray diffractometer, atomic force microscopy, and infrared reflectance spectroscopy. The films grown on STO (001) substrate show a compressive in-plane strain which increases as the film thickness is reduced, resulting in an increase of…
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NiO thin films with various strains were grown on SrTiO3 (STO) and MgO substrates using a pulsed laser deposition technique. The films were characterized using an x-ray diffractometer, atomic force microscopy, and infrared reflectance spectroscopy. The films grown on STO (001) substrate show a compressive in-plane strain which increases as the film thickness is reduced, resulting in an increase of the NiO phonon frequency. On the other hand, a tensile strain was detected in the NiO film grown on MgO (001) substrate which induces a softening of the phonon frequency. Overall, the variation of in-plane strain from -0.36% to +0.48% yields the decrease of the phonon frequency from 409.6 cm-1 to 377.5 cm-1 which occurs due to the ~1% change of the inter-atomic distances. The magnetic exchange -driven phonon splitting Delta(W) in three different sample, with relaxed (i.e. zero) strain, 0.36% compressive and 0.48% tensile strain was measured as a function of temperature. The Delta(W) increases on cooling in NiO relaxed film as in the previously published work on a bulk crystal. The splitting increases on cooling also in 0.48% tensile strained film, but Delta(W) is systematically 3-4 cm-1 smaller than in relaxed film. Since the phonon splitting is proportional to the non-dominant magnetic exchange interaction J1, the reduction of phonon splitting in tensile-strained film was explained by a diminishing J1 with lattice expansion. Increase of Delta(W) on cooling can be also explained by rising of J1 with reduced temperature.
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Submitted 19 February, 2020;
originally announced February 2020.
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Spin-phonon interaction increased by compressive strain in antiferromagnetic MnO thin films
Authors:
Alireza Kashir,
Veronica Goian,
Oliva Pacherova,
Yoon Hee Jeong,
Gil-Ho Lee,
Stanislav Kamba
Abstract:
MnO thin films with various thicknesses and strains were grown on MgO substrates by pulsed laser deposition, then characterized using x-ray diffraction and infrared reflectance spectroscopy. Films grown on (001)-oriented MgO substrates exhibit homogenous biaxial compressive strain which increases as the film thickness is reduced. For that reason, the frequency of doubly-degenerate phonon increases…
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MnO thin films with various thicknesses and strains were grown on MgO substrates by pulsed laser deposition, then characterized using x-ray diffraction and infrared reflectance spectroscopy. Films grown on (001)-oriented MgO substrates exhibit homogenous biaxial compressive strain which increases as the film thickness is reduced. For that reason, the frequency of doubly-degenerate phonon increases with the strain, and splits below Néel temperature TN due to the magnetic-exchange interaction. Films grown on (110)-oriented MgO substrates exhibit a huge phonon splitting already at room temperature due to the anisotropic in-plane compressive strain. Below TN, additional phonon is activated in the IR spectra; this trend is evidence for a spin-order-induced structural phase transition from tetragonal to monoclinic phase. Total phonon splitting is 55 cm-1 in (110)-oriented MnO film, which is more than twice the value in bulk MnO. This result is evidence that the nearest neighbor exchange interaction, which is responsible for the magnetically driven phonon splitting, is greatly increased in compressively strained films.
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Submitted 17 June, 2019;
originally announced June 2019.
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Strain-induced increase of dielectric constant in EuO thin film
Authors:
Alireza Kashir,
Hyeon-Woo Jeong,
Woochan Jung,
Yoon Hee Jeong,
Gil-Ho Lee
Abstract:
Recently, lattice dynamics of the highly strained europium monoxide, as a promising candidate for strong ferroelectric-ferromagnet material, applied in the next-generation storage devices, attracted huge attention in the solid-state electronics. Here, the authors investigate the effect of tensile strain on dielectric properties of pulsed laser deposited EuO thin films from 10 to 200 K. A nearly 3%…
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Recently, lattice dynamics of the highly strained europium monoxide, as a promising candidate for strong ferroelectric-ferromagnet material, applied in the next-generation storage devices, attracted huge attention in the solid-state electronics. Here, the authors investigate the effect of tensile strain on dielectric properties of pulsed laser deposited EuO thin films from 10 to 200 K. A nearly 3% out-of-plane lattice compression is observed as the film thickness was reduced to 8 nm, which could originate from the lattice mismatch between film and a LaAlO3 substrate. The temperature and frequency dependence of capacitance and loss factor of the films reveals the dominant role of electronic and ionic polarization below 100 K. The interdigitated capacitor fabricated on strained film shows almost 50% increase of capacitance compared to the relaxed one, which corresponds to a considerable increase of dielectric constant induced by in-plane tensile strain. Softening of the in-plane polarized transverse phonon modes of EuO lattice due to tensile strain might have the major contribution to this behaviour according to the Lyddane-Sachs-Teller relation.
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Submitted 30 August, 2019; v1 submitted 27 May, 2019;
originally announced May 2019.
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Dielectric properties of strained NiO thin films
Authors:
Alireza Kashir,
Hyeon-Woo Jeong,
Gil-ho Lee,
Pavlo Mikheenko,
Yoon Hee Jeong
Abstract:
The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric permittivity of NiO films becomes dominant and the more defective films, which were grown at low temperatures show a drastical increase in the dielectric constant up to ro…
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The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric permittivity of NiO films becomes dominant and the more defective films, which were grown at low temperatures show a drastical increase in the dielectric constant up to room temperature. While the atomically-ordered film, which was grown at high temperature doesn't show any considerable change in the dielectric constant in the range from 10 to 300 K. Below 100 K, the effect of strain on the dielectric constant becomes clear. An increase in dielectric permittivity is observed in the strained films while the relaxed film doesn't show any remarkable deviation from its bulk value. The low-temperature dielectric behavior of NiO thin film can be interpreted based on the effect of strain on the lattice dynamics of rocksalt binary oxides.
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Submitted 29 April, 2019; v1 submitted 16 April, 2019;
originally announced April 2019.
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Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides
Authors:
Alireza Kashir,
Hyeon-Woo Jeong,
Gil-ho Lee,
Pavlo Mikheenko,
Yoon Hee Jeong
Abstract:
Here we systematically explore the use of pulsed laser deposition technique (PLD) to grow three basic oxides that have rocksalt structure but different chemical stability in the ambient atmosphere: NiO (stable), MnO (metastable) and EuO (unstable). By tuning laser fluence, an epitaxial single-phase nickel oxide thin-film growth can be achieved in a wide range of temperatures from 10 to 750 °C. At…
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Here we systematically explore the use of pulsed laser deposition technique (PLD) to grow three basic oxides that have rocksalt structure but different chemical stability in the ambient atmosphere: NiO (stable), MnO (metastable) and EuO (unstable). By tuning laser fluence, an epitaxial single-phase nickel oxide thin-film growth can be achieved in a wide range of temperatures from 10 to 750 °C. At the lowest growth temperature, the out-of-plane strain raises to 1.5%, which is five times bigger than that in a NiO film grown at 750 °C. MnO thin films that had long-range ordered were successfully deposited on the MgO substrates after appropriate tuning of deposition parameters. The growth of MnO phase was strongly influenced by substrate temperature and laser fluence. EuO films with satisfactory quality were deposited by PLD after oxygen availability had been minimized. Synthesis of EuO thin films at rather low growth temperature prevented thermally-driven lattice relaxation and allowed growth of strained films. Overall, PLD was a quick and reliable method to grow binary oxides with rocksalt structure in high quality that can satisfy requirements for applications and for basic research.
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Submitted 19 September, 2019; v1 submitted 3 April, 2019;
originally announced April 2019.
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Soliton fractional charge of disordered graphene nanoribbon
Authors:
Y. H. Jeong,
S. -R. Eric Yang,
M. -C. Cha
Abstract:
We investigate the properties of the gap-edge states of half-filled interacting disordered zigzag graphene nanoribbons. We find that the midgap states can display the quantized fractional charge of 1/2. These gap-edge states can be represented by topological kinks with their site probability distribution divided between the opposite zigzag edges with different chiralities. In addition, there are n…
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We investigate the properties of the gap-edge states of half-filled interacting disordered zigzag graphene nanoribbons. We find that the midgap states can display the quantized fractional charge of 1/2. These gap-edge states can be represented by topological kinks with their site probability distribution divided between the opposite zigzag edges with different chiralities. In addition, there are numerous spin-split gap-edge states, similar to those in a Mott-Anderson insulator.
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Submitted 24 April, 2019; v1 submitted 6 December, 2018;
originally announced December 2018.
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Gap states and edge properties of rectangular graphene quantum dot in staggered potential
Authors:
Y. H. Jeong,
S. -R. Eric Yang
Abstract:
We investigate edge properties of a gapful rectangular graphene quantum dot in a staggered potential. In such a system gap states with discrete and closely spaced energy levels exist that are spatially located on the left or right zigzag edge. We find that, although the bulk states outside the energy gap are nearly unaffected, spin degeneracy of each gap state is lifted by the staggered potential.…
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We investigate edge properties of a gapful rectangular graphene quantum dot in a staggered potential. In such a system gap states with discrete and closely spaced energy levels exist that are spatially located on the left or right zigzag edge. We find that, although the bulk states outside the energy gap are nearly unaffected, spin degeneracy of each gap state is lifted by the staggered potential. We have computed the occupation numbers of spin-up and -down gap states at various values of the strength of the staggered potential. The electronic and magnetic properties of the zigzag edges depend sensitively on these numbers. We discuss the possibility of applying this system as a single electron spintronic device.
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Submitted 27 September, 2017;
originally announced September 2017.
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Topological end states and Zak phase of rectangular armchair ribbon
Authors:
Y. H. Jeong,
S. -R. Eric Yang
Abstract:
We consider the end states of a half-filled rectangular armchair graphene ribbon (RAGR) in a staggered potential. Taking electron-electron interactions into account we find that, as the strength of the staggered potential varies, three types of couplings between the end states can occur: antiferromagnetic without or with spin splitting, and paramagnetic without spin-splitting. We find that a spin-…
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We consider the end states of a half-filled rectangular armchair graphene ribbon (RAGR) in a staggered potential. Taking electron-electron interactions into account we find that, as the strength of the staggered potential varies, three types of couplings between the end states can occur: antiferromagnetic without or with spin splitting, and paramagnetic without spin-splitting. We find that a spin-splitting is present only in the staggered potential region $0<Δ<Δ_c$. The transition from the antiferromagnetic state at $Δ=0$ to the paramagnetic state goes through an intermediate spin-split antiferromagnetic state, and this spin-splitting disappears suddenly at $Δ_c$. For small and large values of $Δ$ the end charge of a RAGR can be connected to the Zak phase of the periodic armchair graphene ribbon (PARG) with the same width, and it varies continuously as the strength of the potential changes.
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Submitted 13 September, 2017;
originally announced September 2017.
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Atomically flat single terminated oxide substrate surfaces
Authors:
Abhijit Biswas,
Chan Ho Yang,
Ramamoorthy Ramesh,
Yoon H Jeong
Abstract:
To achieve high quality epitaxial thin films and heterostructures of transition metal oxides with atomically controlled interfaces, one critical requirement is the use of atomically flat single terminated oxide substrates since the atomic arrangements and the reaction chemistry of the topmost surface layer of substrates determine the growth and consequent properties of the overlying films. Achievi…
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To achieve high quality epitaxial thin films and heterostructures of transition metal oxides with atomically controlled interfaces, one critical requirement is the use of atomically flat single terminated oxide substrates since the atomic arrangements and the reaction chemistry of the topmost surface layer of substrates determine the growth and consequent properties of the overlying films. Achieving the atomically flat and chemically single terminated surface state of commercially available substrates, however, requires judicious efforts because the surface of as-received substrates is of chemically mixed nature and also often polar. In this review, we summarize the surface treatment procedures to accomplish atomically flat surfaces with single terminating layer for various metal oxide substrates. We particularly focus on the substrates with lattice constant ranging from 4.00 to 3.70 angstrom, as the lattice constant of most perovskite materials falls into this range. For materials outside the range, one can utilize the substrates to induce compressive or tensile strain on the films and explore new states not available in bulk. The substrates covered in this review, which have been chosen with commercial availability and, most importantly, experimental practicality as a criterion, are KTaO3, REScO3 (RE = Rare-earth elements), SrTiO3, La0.18Sr0.82Al0.59Ta0.41O3 (LSAT), NdGaO3, LaAlO3, SrLaAlO4, and YAlO3. Analyzing all the established procedures, we conclude that atomically flat surfaces with selective A- or B-site single termination would be obtained for most commercially available oxide substrates. We further note that this topmost surface layer selectivity would provide an additional degree of freedom in searching for unforeseen emergent phenomena and functional applications in epitaxial oxide thin films and heterostructures with atomically controlled interfaces.
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Submitted 29 May, 2017; v1 submitted 9 May, 2017;
originally announced May 2017.
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Direct observation of the M2 phase with its Mott transition in a VO$_2$ film
Authors:
Hoon Kim,
Tetiana V. Slusar,
Dirk Wulferding,
Ilkyu Yang,
**-Cheol Cho,
Minkyung Lee,
Hee Cheul Choi,
Yoon Hee Jeong,
Hyun-Tak Kim,
Jeehoon Kim
Abstract:
In VO$_2$, the explicit origin of the insulator-to-metal transition is still disputable between Peierls and Mott insulators. Along with the controversy, its second monoclinic (M2) phase has received considerable attention due to the presence of electron correlation in undimerized vanadium ions. However, the origin of the M2 phase is still obscure. Here, we study a granular VO$_2$ film using conduc…
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In VO$_2$, the explicit origin of the insulator-to-metal transition is still disputable between Peierls and Mott insulators. Along with the controversy, its second monoclinic (M2) phase has received considerable attention due to the presence of electron correlation in undimerized vanadium ions. However, the origin of the M2 phase is still obscure. Here, we study a granular VO$_2$ film using conductive atomic force microscopy and Raman scattering. Upon the structural transition from monoclinic to rutile, we observe directly an intermediate state showing the coexistence of monoclinic M1 and M2 phases. The conductivity near the grain boundary in this regime is six times larger than that of the grain core, producing a donut-like landscape. Our results reveal an intra-grain percolation process, indicating that VO$_2$ with the M2 phase is a Mott insulator.
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Submitted 29 November, 2016;
originally announced November 2016.
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Growth and engineering of perovskite SrIrO3 thin films
Authors:
Abhijit Biswas,
Yoon Hee Jeong
Abstract:
5d transition-metal-based oxides display emergent phenomena due to the competition between the relevant energy scales of the correlation, bandwidth, and most importantly, the strong spin-orbit coupling (SOC). Starting from the prediction of novel oxide topological insulators in bilayer ABO3 (B = 5d elements) thin-film grown along the (111) direction, 5d-based perovskites (Pv) form a new paradigm i…
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5d transition-metal-based oxides display emergent phenomena due to the competition between the relevant energy scales of the correlation, bandwidth, and most importantly, the strong spin-orbit coupling (SOC). Starting from the prediction of novel oxide topological insulators in bilayer ABO3 (B = 5d elements) thin-film grown along the (111) direction, 5d-based perovskites (Pv) form a new paradigm in the thin-film community. Here, we reviewed the scientific accomplishments in Pv-SrIrO3 thin films, a popular candidate for observing non-trivial topological phenomena. Although the predicted topological phenomena are unknown, the Pv-SrIrO3 thin film shows many emergent properties due to the delicate interplay between its various degrees of freedom. These observations provide new physical insight and encourage further research on the design of new 5d-based heterostructures or superlattices for the observation of the hidden topological quantum phenomena in strong spin-orbit coupled oxides.
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Submitted 15 February, 2017; v1 submitted 1 August, 2016;
originally announced August 2016.
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Terahertz Spin-Orbital Excitations in the paramagnetic state of multiferroic Sr$_2$FeSi$_2$O$_7$
Authors:
Thuc T. Mai,
C. Svoboda,
M. T. Warren,
T. -H. Jang,
J. Brangham,
Y. H. Jeong,
S-W. Cheong,
R. Valdés Aguilar
Abstract:
We studied the novel multiferroic material Sr$_2$FeSi$_2$O$_7$, and found 3 absorption modes above the magnetic ordering transition temperature using time-domain terahertz spectroscopy. These absorption modes can be explained as the optical transitions between the spin-orbit coupling and crystal field split 3d$^6$ Fe$^{2+}$ ground state term in this material. Consideration of the compressed tetrah…
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We studied the novel multiferroic material Sr$_2$FeSi$_2$O$_7$, and found 3 absorption modes above the magnetic ordering transition temperature using time-domain terahertz spectroscopy. These absorption modes can be explained as the optical transitions between the spin-orbit coupling and crystal field split 3d$^6$ Fe$^{2+}$ ground state term in this material. Consideration of the compressed tetrahedral environment of the Fe$^{2+}$ site is crucial to understand the excitations. We point out, however, discrepancies between the single-site atomic picture and the experimental results.
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Submitted 3 May, 2016; v1 submitted 13 April, 2016;
originally announced April 2016.
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Graphene nanosystems and low-dimensional Chern-Simons topological insulators
Authors:
Y. H. Jeong,
S. -R. Eric Yang
Abstract:
A graphene nanoribbon is a good candidate for a $(1+1)$ Chern-Simons topological insulator since it obeys particle-hole symmetry. We show that in a finite semiconducting armchair ribbon, which has two zigzag edges and two armchair edges, a $(1+1)$ Chern-Simons topological insulator is indeed realized as the length of the armchair edges becomes large in comparison to that of the zigzag edges. But o…
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A graphene nanoribbon is a good candidate for a $(1+1)$ Chern-Simons topological insulator since it obeys particle-hole symmetry. We show that in a finite semiconducting armchair ribbon, which has two zigzag edges and two armchair edges, a $(1+1)$ Chern-Simons topological insulator is indeed realized as the length of the armchair edges becomes large in comparison to that of the zigzag edges. But only a quasi-topological insulator is formed in a metallic armchair ribbon with a pseudogap. In such systems a zigzag edge acts like a domain wall, through which the polarization changes from $0$ to $e/2$, forming a fractional charge of one-half. When the lengths of the zigzag edges and the armchair edges are comparable a rectangular graphene sheet (RGS) is realized, which also possess particle-hole symmetry. We show that it is a $(0+1)$ Chern-Simons topological insulator. We find that the cyclic Berry phase of states of a RGS is quantized as $π$ or $0$ (mod $2π$), and that the Berry phases of the particle-hole conjugate states are equal each other. By applying the Atiyah-Singer index theorem to a rectangular ribbon and a RGS we find that the lower bound on the number of nearly zero energy end states is approximately proportional to the length of the zigzag edges. However, there is a correction to this index theorem due to the effects beyond the effective mass approximation.
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Submitted 3 November, 2015;
originally announced November 2015.
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Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films
Authors:
Abhijit Biswas,
Yong Woo Lee,
Sang Woo Kim,
Yoon Hee Jeong
Abstract:
We investigated the nature of transport and magnetic properties in SrIr0.5Ru0.5O3, (SIRO) which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin films on various substrates (SrTiO3 (001), (LaAlO3)0.3(Sr2TaAlO6)0.7 (001) and LaAlO3 (001)). We observed systematic variation of underlying substrate dependent me…
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We investigated the nature of transport and magnetic properties in SrIr0.5Ru0.5O3, (SIRO) which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin films on various substrates (SrTiO3 (001), (LaAlO3)0.3(Sr2TaAlO6)0.7 (001) and LaAlO3 (001)). We observed systematic variation of underlying substrate dependent metal-to-insulator transition temperatures at 80 K on SrTiO3, 90 K on (LaAlO3)0.3(Sr2TaAlO6)0.7 and 100 K on LaAlO3) in resistivity. Resistivity in the metallic region follows a T3/2 power law; whereas insulating nature at low T is due to the localization effect. Magnetoresistance (MR) measurement of SIRO on SrTiO3 (001) shows negative MR upto 25 K and positive MR above 25 K, with negative MR proportional to B1/2 and positive MR proportional to B2; consistent with the localized-to-normal transport crossover dynamics. Furthermore, observed spin glass like behavior of SIRO on SrTiO3 (001) in the localized regime, validates the hypothesis that (Anderson) localization favors glassy ordering. These remarkable features provide a promising approach for future applications and of fundamental interest in oxide thin films.
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Submitted 9 September, 2015;
originally announced September 2015.
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Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films
Authors:
Abhijit Biswas,
Yong Woo Lee,
Yoon Hee Jeong
Abstract:
We have investigated the electronic and magnetic properties of perovskite SrRu1-xIrxO3 thin films grown by pulsed laser deposition on atomically-flat (001) SrTiO3 substrates. SrRuO3 has the properties of a ferromagnetic metal with Curie temperature 150 K. Substituting Ir for Ru in SrRuO3, films showed fully-metallic behavior and ferromagnetic ordering, although resistivity increased and the ferrom…
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We have investigated the electronic and magnetic properties of perovskite SrRu1-xIrxO3 thin films grown by pulsed laser deposition on atomically-flat (001) SrTiO3 substrates. SrRuO3 has the properties of a ferromagnetic metal with Curie temperature 150 K. Substituting Ir for Ru in SrRuO3, films showed fully-metallic behavior and ferromagnetic ordering, although resistivity increased and the ferromagnetic TC decreased. Films with x = 0.25 underwent the metal-to-insulator transition at 75 K, and spin-glass-like ordering at 45 K with the elimination of ferromagnetic long-range ordering caused by the electron localization at the substitution sites. In ferromagnetic films, resistivity increased near-linearly with T, but in paramagnetic film (x = 0.25) resistivity increased as T3/2. Moreover, observed spin-glass-like (TSG) ordering with the negative magnetoresistance in film with x = 0.25; validates the hypothesis that (Anderson) localization favors glassy ordering at amply disorder limit. These observations provide a promising approach for future applications and of fundamental interest in 4d and 5d mixed perovskites.
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Submitted 9 September, 2015;
originally announced September 2015.
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Metal-Insulator Transitions and non-Fermi Liquid Behaviors in 5d Perovskite Iridates
Authors:
Abhijit Biswas,
Ki-Seok Kim,
Yoon Hee Jeong
Abstract:
Transition metal oxides, in particular, 3d or 4d perovskites have provided diverse emergent physics that originates from the coupling of various degrees of freedom such as spin, lattice, charge, orbital, and also disorder. 5d perovskites form a distinct class because they have strong spin-orbit coupling that introduces to the system an additional energy scale that is comparable to bandwidth and Co…
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Transition metal oxides, in particular, 3d or 4d perovskites have provided diverse emergent physics that originates from the coupling of various degrees of freedom such as spin, lattice, charge, orbital, and also disorder. 5d perovskites form a distinct class because they have strong spin-orbit coupling that introduces to the system an additional energy scale that is comparable to bandwidth and Coulomb correlation. Consequent new physics includes novel Jeff = 1/2 Mott insulators, metal-insulator transitions, spin liquids, and topological insulators. After highlighting some of the phenomena appearing in Ruddlesden-Popper iridate series Srn+1IrnO3n+1, we focus on the transport properties of perovskite SrIrO3. Using epitaxial thin films on various substrates, we demonstrate that metal-insulator transitions can be induced in perovskite SrIrO3 by reducing its thickness or by imposing compressive strain. The metal-insulator transition driven by thickness reduction is due to disorder, but the metal-insulator transition driven by compressive strain is accompanied by peculiar non-Fermi liquid behaviors, possibly due to the delicate interplay between correlation, disorder, and spin-orbit coupling. We examine various theoretical frameworks to understand the non-Fermi liquid physics and metal-insulator transition that occurs in SrIrO3 and offer the Mott-Anderson-Griffiths scenario as a possible solution.
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Submitted 18 April, 2016; v1 submitted 20 August, 2015;
originally announced August 2015.
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Emergence of non-Fermi liquid behaviors in 5d perovskite SrIrO3 thin films: interplay between correlation, disorder, and spin-orbit coupling
Authors:
Abhijit Biswas,
Ki-Seok Kim,
Yoon H. Jeong
Abstract:
We investigate the effects of compressive strain on the electrical resistivity of 5d iridium based perovskite SrIrO3 by depositing epitaxial films of thickness 35 nm on various substrates such as GdScO3 (110), DyScO3 (110), and SrTiO3 (001). Surprisingly, we find anomalous transport behaviors in the tempeature dependent resistivity, where the temperature exponent evolves continuously from 4/5 to 1…
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We investigate the effects of compressive strain on the electrical resistivity of 5d iridium based perovskite SrIrO3 by depositing epitaxial films of thickness 35 nm on various substrates such as GdScO3 (110), DyScO3 (110), and SrTiO3 (001). Surprisingly, we find anomalous transport behaviors in the tempeature dependent resistivity, where the temperature exponent evolves continuously from 4/5 to 1 and to 3/2 with an increase of compressive strain. Furthermore, magnetoresistance always remains positive irrespective of resistivity upturns at low temperatures. These observations imply that the delicate interplay between correlation and disorder in the presence of strong spin-orbit coupling is responsible for the emergence of the non-Fermi liquid behaviors in 5d perovskite SrIrO3 thin films. We offer a theoretical framework for the interpretation of the experimental results.
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Submitted 17 August, 2015;
originally announced August 2015.
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Magnetic domain tuning and the emergence of bubble domains in the bilayer manganite La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ (x=0.32)
Authors:
Juyoung Jeong,
Ilkyu Yang,
**ho Yang,
Oscar E. Ayala-Valenzuela,
Dirk Wulferding,
J. -S. Zhou,
John B. Goodenough,
Alex de Lozanne,
John F. Mitchell,
Neliza Leon,
Roman Movshovich,
Yoon Hee Jeong,
Han Woong Yeom,
Jeehoon Kim
Abstract:
We report a magnetic force microscopy study of the magnetic domain evolution in the layered manganite La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ (with $x=0.32$). This strongly correlated electron compound is known to exhibit a wide range of magnetic phases, including a recently uncovered biskyrmion phase. We observe a continuous transition from dendritic to stripe-like domains, followed by the formation of…
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We report a magnetic force microscopy study of the magnetic domain evolution in the layered manganite La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ (with $x=0.32$). This strongly correlated electron compound is known to exhibit a wide range of magnetic phases, including a recently uncovered biskyrmion phase. We observe a continuous transition from dendritic to stripe-like domains, followed by the formation of magnetic bubbles due to a field- and temperature dependent competition between in-plane and out-of-plane spin alignments. The magnetic bubble phase appears at comparable field- and temperature ranges as the biskyrmion phase, suggesting a close relation between both phases. Based on our real-space images we construct a temperature-field phase diagram for this composition.
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Submitted 14 August, 2015;
originally announced August 2015.
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Topological gap states of semiconducting armchair graphene ribbons
Authors:
Y. H. Jeong,
S. C. Kim,
S. -R. Eric Yang
Abstract:
In semiconducting armchair graphene ribbons a chiral lattice deformation can induce pairs of topological gap states with opposite energies. Near the critical value of the deformation potential these kink and antikink states become almost degenerate with zero energy and have a fractional charge one-half. Such a semiconducting armchair ribbon represents a one-dimensional topological insulator with n…
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In semiconducting armchair graphene ribbons a chiral lattice deformation can induce pairs of topological gap states with opposite energies. Near the critical value of the deformation potential these kink and antikink states become almost degenerate with zero energy and have a fractional charge one-half. Such a semiconducting armchair ribbon represents a one-dimensional topological insulator with nearly zero energy end states. Using data collapse of numerical results we find that the shape of the kink displays an anomalous power-law dependence on the width of the local lattice deformation. We suggest that these gap states may be probed in optical measurements. However, "metallic" armchair graphene ribbons with a gap induced by many-electron interactions have no gap states and are not topological insulators.
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Submitted 31 May, 2015; v1 submitted 17 May, 2015;
originally announced May 2015.
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Effects of substrate temperature on the unusual non-Fermi liquid metal to insulator transition in perovskite SrIrO3 thin films
Authors:
Abhijit Biswas,
Yoon Hee Jeong
Abstract:
Electronic transport has been investigated for strong spin-orbit coupled perovskite SrIrO3 thin films grown at various substrate temperatures. The electronic transport of the SrIrO3 films is found to be very sensitive to the growth parameters; in particular, the film can either be a metal or an insulator depending upon the substrate growth temperature. While all the metallic films show unusual sub…
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Electronic transport has been investigated for strong spin-orbit coupled perovskite SrIrO3 thin films grown at various substrate temperatures. The electronic transport of the SrIrO3 films is found to be very sensitive to the growth parameters; in particular, the film can either be a metal or an insulator depending upon the substrate growth temperature. While all the metallic films show unusual sublinear temperature dependent non-Fermi liquid behaviors in resistivity, the insulating film grown at a higher temperature stands out for its inhomogeneous Ir distribution, as analyzed by secondary ion mass spectrometry. This observation demonstrates that the inhomogeneous distribution of cations can be one of the fundamental factors in affecting the electronic transport in heavy element based oxide films and heterostructures.
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Submitted 16 March, 2015;
originally announced March 2015.
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Persistent semi-metal-like nature of epitaxial perovskite CaIrO3 thin films
Authors:
Abhijit Biswas,
Yoon Hee Jeong
Abstract:
Strong spin-orbit coupled 5d transition metal based ABO3 oxides, especially iridates, allow tuning parameters in the phase diagram and may demonstrate important functionalities, for example, by means of strain effects and symmetry-breaking, because of the interplay between the Coulomb interactions and strong spin-orbit coupling. Here, we have epitaxially stabilized high quality thin films of perov…
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Strong spin-orbit coupled 5d transition metal based ABO3 oxides, especially iridates, allow tuning parameters in the phase diagram and may demonstrate important functionalities, for example, by means of strain effects and symmetry-breaking, because of the interplay between the Coulomb interactions and strong spin-orbit coupling. Here, we have epitaxially stabilized high quality thin films of perovskite (Pv) CaIrO3. Film on the best lattice-matched substrate shows semi-metal-like characteristics. Intriguingly, imposing tensile or compressive strain on the film by altering the underlying lattice-mismatched substrates still maintains semi-metallicity with minute modification of the effective correlation as tensile (compressive) strain results in tiny increases (decreases) of the electronic bandwidth. In addition, magnetoresistance remains positive with a quadratic field dependence. This persistent semi-metal-like nature of Pv-CaIrO3 thin films with minute changes in the effective correlation by strain may provide new wisdom into strong spin-orbit coupled 5d based oxide physics.
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Submitted 20 May, 2015; v1 submitted 4 February, 2015;
originally announced February 2015.
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Ferroelectric and Magnetic Domains in LuFe2O4 Observed by Scanning Probe Microscopy
Authors:
I. K. Yang,
J. Kim,
S. H. Lee,
S. B. Kim,
S. W. Cheong,
Y. H. Jeong
Abstract:
LuFe2O4 is a multiferroic system which exhibits ferroelectricity, charge order, and ferrimagnetic order simultaneously below ~230 K. The ferroelectric domains of LuFe2O4 are imaged with both piezoresponse force microscopy (PFM) and electrostatic force microscopy (EFM), while the magnetic domains are characterized by magnetic force microscopy (MFM). Comparison of PFM and EFM results lead to a concl…
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LuFe2O4 is a multiferroic system which exhibits ferroelectricity, charge order, and ferrimagnetic order simultaneously below ~230 K. The ferroelectric domains of LuFe2O4 are imaged with both piezoresponse force microscopy (PFM) and electrostatic force microscopy (EFM), while the magnetic domains are characterized by magnetic force microscopy (MFM). Comparison of PFM and EFM results lead to a conclusion that the ferroelectricity is of electronic origin as opposed to the usual displacive one. Simultaneous characterization of ferroelectric and magnetic domains by EFM and MFM, respectively, on the same surface of LuFe2O4 reveals that both domains have irregular patterns of similar shape, but the length scales are quite different. The domain size is approximately 100 nm for the ferroelectric domains while the magnetic domain size is much larger and gets as large as 1μm. We also demonstrate that the origin of the formation of irregular domains in LuFe2O4 is not extrinsic but intrinsic.
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Submitted 16 July, 2014;
originally announced July 2014.
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Metal insulator transitions in perovskite SrIrO3 thin films
Authors:
Abhijit Biswas,
Ki-Seok Kim,
Yoon Hee Jeong
Abstract:
Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing fundamental question would be how these two mechanisms contrive to accomplish emergent anomalous behaviors. Here, we have grown high quality perovskite SrIrO3 thin film…
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Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing fundamental question would be how these two mechanisms contrive to accomplish emergent anomalous behaviors. Here, we have grown high quality perovskite SrIrO3 thin films, containing a strong spin orbit coupled 5d element Ir, on various substrates such as GdScO3 (110), DyScO3 (110), SrTiO3 (001), and NdGaO3 (110) with increasing lattice mismatch, in order to carry out a systematic study on the transport properties. We found that metal insulator transitions can be induced in this system; by either reducing thickness (on best lattice matched substrate) or changing degree of lattice strain (by lattice mismatch between film and substrates) of films. Surprisingly these two pathways seek two distinct types of metal insulator transitions; the former falls into disorder driven Anderson type whereas the latter turns out to be of unconventional Mott-Anderson type with the interplay of disorder and correlation. More interestingly, in the metallic phases of SrIrO3, unusual non-Fermi liquid characteristics emerge in resistivity as the resistivity exponent evolves from from 4/5 to 1 to 3/2 with increasing lattice strain. We discuss theoretical implications of these phenomena to shed light on the metal insulator transitions.
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Submitted 3 December, 2014; v1 submitted 10 December, 2013;
originally announced December 2013.
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Non-resonant and Resonant X-ray Scattering Studies on Multiferroic TbMn2O5
Authors:
J. Koo,
C. Song,
S. Ji,
J. -S. Lee,
J. Park,
T. -H. Jang,
C. -H. Yang,
J. -H. Park,
Y. H. Jeong,
K. -B. Lee,
T. Y. Koo,
Y. J. Park,
J. -Y. Kim,
D. Wemeille,
A. I. Goldman,
G. Srajer,
S. Park,
S. -W. Cheong
Abstract:
Comprehensive x-ray scattering studies, including resonant scattering at Mn L-edge, Tb L- and M-edges, were performed on single crystals of TbMn2O5. X-ray intensities were observed at a forbidden Bragg position in the ferroelectric phases, in addition to the lattice and the magnetic modulation peaks. Temperature dependences of their intensities and the relation between the modulation wave vector…
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Comprehensive x-ray scattering studies, including resonant scattering at Mn L-edge, Tb L- and M-edges, were performed on single crystals of TbMn2O5. X-ray intensities were observed at a forbidden Bragg position in the ferroelectric phases, in addition to the lattice and the magnetic modulation peaks. Temperature dependences of their intensities and the relation between the modulation wave vectors provide direct evidences of exchange striction induced ferroelectricity. Resonant x-ray scattering results demonstrate the presence of multiple magnetic orders by exhibiting their different temperature dependences. The commensurate-to-incommensurate phase transition around 24 K is attributed to discommensuration through phase slip** of the magnetic orders in spin frustrated geometries. We proposed that the low temperature incommensurate phase consists of the commensurate magnetic domains separated by anti-phase domain walls which reduce spontaneous polarizations abruptly at the transition.
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Submitted 4 April, 2007;
originally announced April 2007.
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Orbital ordering and enhanced magnetic frustration of strained BiMnO3 thin films
Authors:
C. -H. Yang,
T. Y. Koo,
S. -H. Lee,
C. Song,
K. -B. Lee,
Y. H. Jeong
Abstract:
Epitaxial thin films of multiferroic perovskite BiMnO3 were synthesized on SrTiO3 substrates, and orbital ordering and magnetic properties of the thin films were investigated. The ordering of the Mn^{3+} e_g orbitals at a wave vector (1/4 1/4 1/4) was detected by Mn K-edge resonant x-ray scattering. This peculiar orbital order inherently contains magnetic frustration. While bulk BiMnO3 is known…
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Epitaxial thin films of multiferroic perovskite BiMnO3 were synthesized on SrTiO3 substrates, and orbital ordering and magnetic properties of the thin films were investigated. The ordering of the Mn^{3+} e_g orbitals at a wave vector (1/4 1/4 1/4) was detected by Mn K-edge resonant x-ray scattering. This peculiar orbital order inherently contains magnetic frustration. While bulk BiMnO3 is known to exhibit simple ferromagnetism, the frustration enhanced by in-plane compressive strains in the films brings about cluster-glass-like properties.
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Submitted 1 March, 2006;
originally announced March 2006.
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Resonant x-ray scattering study on multiferroic BiMnO3
Authors:
C. -H. Yang,
J. Koo,
C. Song,
T. Y. Koo,
K. -B. Lee,
Y. H. Jeong
Abstract:
Resonant x-ray scattering is performed near the Mn K-absorption edge for an epitaxial thin film of BiMnO3. The azimuthal angle dependence of the resonant (003) peak (in monoclinic indices) is measured with different photon polarizations; for the $σ\toπ'$ channel a 3-fold symmetric oscillation is observed in the intensity variation, while the $σ\toσ'$ scattering intensity remains constant. These…
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Resonant x-ray scattering is performed near the Mn K-absorption edge for an epitaxial thin film of BiMnO3. The azimuthal angle dependence of the resonant (003) peak (in monoclinic indices) is measured with different photon polarizations; for the $σ\toπ'$ channel a 3-fold symmetric oscillation is observed in the intensity variation, while the $σ\toσ'$ scattering intensity remains constant. These features are accounted for in terms of the peculiar ordering of the manganese 3d orbitals in BiMnO3. It is demonstrated that the resonant peak persists up to 770 K with an anomaly around 440 K; these high and low temperatures coincide with the structural transition temperatures, seen in bulk, with and without a symmetry change, respectively. A possible relationship of the orbital order with the ferroelectricity of the system is discussed.
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Submitted 23 January, 2006;
originally announced January 2006.
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Background charge fluctuation in a GaAs quantum dot device
Authors:
S. W. Jung,
T. Fujisawa,
Y. H. Jeong,
Y. Hirayama
Abstract:
We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and tunneling barriers. The estimated potential fluctuation increases almost linearly with temperature, which is consistent with a simple model of the 1/f noise. We f…
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We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and tunneling barriers. The estimated potential fluctuation increases almost linearly with temperature, which is consistent with a simple model of the 1/f noise. We find that the fluctuation increases very slightly when electrons are injected into excited states of the quantum dot.
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Submitted 9 July, 2004;
originally announced July 2004.
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A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu
Authors:
S-J. Han,
J. W. Song,
C. -H. Yang,
S. H. Park,
J. -H. Park,
Y. H. Jeong
Abstract:
Successful synthesis of room-temperature ferromagnetic semiconductors, Zn$_{1-x}$Fe$_{x}$O, is reported. The essential ingredient in achieving room-temperature ferromagnetism in bulk Zn$_{1-x}$Fe$_{x}$O was found to be additional Cu do**. A transition temperature as high as 550 K was obtained in Zn$_{0.94}$Fe$_{0.05}$Cu$_{0.01}$O; the saturation magnetization at room temperature reached a valu…
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Successful synthesis of room-temperature ferromagnetic semiconductors, Zn$_{1-x}$Fe$_{x}$O, is reported. The essential ingredient in achieving room-temperature ferromagnetism in bulk Zn$_{1-x}$Fe$_{x}$O was found to be additional Cu do**. A transition temperature as high as 550 K was obtained in Zn$_{0.94}$Fe$_{0.05}$Cu$_{0.01}$O; the saturation magnetization at room temperature reached a value of $0.75 μ_{\rm B}$ per Fe. Large magnetoresistance was also observed below $100 $K.
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Submitted 21 August, 2002;
originally announced August 2002.
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Cooperative Jahn-Teller transition and resonant x-ray scattering in thin film ${\rm LaMnO_3}$
Authors:
J. H. Song,
J. H. Park,
K. -B. Lee,
Y. H. Jeong
Abstract:
Epitaxial thin films of stoichiometric ${\rm LaMnO_3}$ were grown on ${\rm SrTiO_3(110)}$ substrates using the pulsed laser deposition technique. From the high resolution x-ray diffraction measurements, the lattice parameters were determined as a function of temperature and the cooperative Jahn-Teller transition was found to occur at $T_{JT}$=573.0 K. Also measured was resonant x-ray scattering…
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Epitaxial thin films of stoichiometric ${\rm LaMnO_3}$ were grown on ${\rm SrTiO_3(110)}$ substrates using the pulsed laser deposition technique. From the high resolution x-ray diffraction measurements, the lattice parameters were determined as a function of temperature and the cooperative Jahn-Teller transition was found to occur at $T_{JT}$=573.0 K. Also measured was resonant x-ray scattering intensity of the orthorhombic (100) peak of ${\rm LaMnO_3}$ near the Mn K edge from low temperatures to above $T_{JT}$. We demonstrate that the integrated intensity of the (100) peak is proportional to the 3/2 power of the orthorhombic strain at all temperatures, and thus provide an experimental evidence that the resonant scattering near the Mn K edge in ${\rm LaMnO_3}$ is largely due to the Jahn-Teller effect.
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Submitted 29 October, 2001;
originally announced October 2001.
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Modern calorimetry: going beyond tradition
Authors:
Y. H. Jeong
Abstract:
Calorimetry has been a traditional tool for obtaining invaluable thermodynamic information of matter, the free energy. We describe recent efforts to go beyond this traditional calorimetry: After introducing dynamic heat capacity, we present the various experimental methods to measure it. Applications and future prospects are also given.
Calorimetry has been a traditional tool for obtaining invaluable thermodynamic information of matter, the free energy. We describe recent efforts to go beyond this traditional calorimetry: After introducing dynamic heat capacity, we present the various experimental methods to measure it. Applications and future prospects are also given.
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Submitted 15 October, 2001;
originally announced October 2001.
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Peltier ac calorimeter
Authors:
D. H. Jung,
I. K. Moon,
Y. H. Jeong
Abstract:
A new ac calorimeter, utilizing the Peltier effect of a thermocouple junction as an ac power source, is described. This Peltier ac calorimeter allows to measure the absolute value of heat capacity of small solid samples with sub-milligrams of mass. The calorimeter can also be used as a dynamic one with a dynamic range of several decades at low frequencies.
A new ac calorimeter, utilizing the Peltier effect of a thermocouple junction as an ac power source, is described. This Peltier ac calorimeter allows to measure the absolute value of heat capacity of small solid samples with sub-milligrams of mass. The calorimeter can also be used as a dynamic one with a dynamic range of several decades at low frequencies.
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Submitted 15 October, 2001;
originally announced October 2001.
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Anisotropic strains, metal-insulator transition, and magnetoresistance of La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ films
Authors:
J. H. Song,
J. H. Park,
Y. H. Jeong,
T. Y. Koo
Abstract:
Thin films of perovskite manganite La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ were grown epitaxially on various substrates by either the pulsed laser deposition method or laser molecular beam epitaxy. The substrates change both the volume and symmetry of the unit cell of the films. It is revealed that the symmetry as well as the volume of the unit cell have strong influence on the metal-insulator transition…
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Thin films of perovskite manganite La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ were grown epitaxially on various substrates by either the pulsed laser deposition method or laser molecular beam epitaxy. The substrates change both the volume and symmetry of the unit cell of the films. It is revealed that the symmetry as well as the volume of the unit cell have strong influence on the metal-insulator transition temperature and the size of magnetoresistance.
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Submitted 15 October, 2001;
originally announced October 2001.
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Multiphase segregation and metal-insulator transition in single crystal La(5/8-y)Pr(y)Ca(3/8)MnO3
Authors:
V. Kiryukhin,
B. G. Kim,
V. Podzorov,
S-W. Cheong,
T. Y. Koo,
J. P. Hill,
I. Moon,
Y. H. Jeong
Abstract:
The insulator-metal transition in single crystal La(5/8-y)Pr(y)Ca(3/8)MnO3 with y=0.35 was studied using synchrotron x-ray diffraction, electric resistivity, magnetic susceptibility, and specific heat measurements. Despite the dramatic drop in the resistivity at the insulator-metal transition temperature Tmi, the charge-ordering (CO) peaks exhibit no anomaly at this temperature and continue to g…
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The insulator-metal transition in single crystal La(5/8-y)Pr(y)Ca(3/8)MnO3 with y=0.35 was studied using synchrotron x-ray diffraction, electric resistivity, magnetic susceptibility, and specific heat measurements. Despite the dramatic drop in the resistivity at the insulator-metal transition temperature Tmi, the charge-ordering (CO) peaks exhibit no anomaly at this temperature and continue to grow below Tmi. Our data suggest then, that in addition to the CO phase, another insulating phase is present below Tco. In this picture, the insulator-metal transition is due to the changes within this latter phase. The CO phase does not appear to play a major role in this transition. We propose that a percolation-like insulator-metal transition occurs via the growth of ferromagnetic metallic domains within the parts of the sample that do not exhibit charge ordering. Finally, we find that the low-temperature phase-separated state is unstable against x-ray irradiation, which destroys the CO phase at low temperatures.
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Submitted 18 July, 2000;
originally announced July 2000.
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Anisotropic strains and magnetoresistance of La_{0.7}Ca_{0.3}MnO_{3}
Authors:
T. Y. Koo,
S. H. Park,
K. B. Lee,
Y. H. Jeong
Abstract:
Thin films of perovskite manganite La_{0.7}Ca_{0.3}MnO_{3} were grown epitaxially on SrTiO_3(100), MgO(100) and LaAlO_3(100) substrates by the pulsed laser deposition method. Microscopic structures of these thin film samples as well as a bulk sample were fully determined by x-ray diffraction measurements. The unit cells of the three films have different shapes, i.e., contracted tetragonal, cubic…
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Thin films of perovskite manganite La_{0.7}Ca_{0.3}MnO_{3} were grown epitaxially on SrTiO_3(100), MgO(100) and LaAlO_3(100) substrates by the pulsed laser deposition method. Microscopic structures of these thin film samples as well as a bulk sample were fully determined by x-ray diffraction measurements. The unit cells of the three films have different shapes, i.e., contracted tetragonal, cubic, and elongated tetragonal for SrTiO_3, MgO, and LaAlO_3 cases, respectively, while the unit cell of the bulk is cubic. It is found that the samples with cubic unit cell show smaller peak magnetoresistance than the noncubic ones do. The present result demonstrates that the magnetoresistance of La_{0.7}Ca_{0.3}MnO_{3} can be controlled by lattice distortion via externally imposed strains.
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Submitted 18 February, 1997; v1 submitted 17 February, 1997;
originally announced February 1997.
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Magetic softening of Young's modulus of amorphous Fe90Zr10
Authors:
S. H. Park,
Y. H. Jeong
Abstract:
The Young's modulus and the internal friction of amorphous Fe$_{90}$Zr$_{10}$ alloy were measured near the Curie temperature using the vibrating reed technique. The modulus shows softening around $T_c\approx 227K$ and the internal friction undergoes drastic increase at $T_c$. It is found that both the Young's modulus and the reciprocal of internal friction are inversely proportional to the magne…
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The Young's modulus and the internal friction of amorphous Fe$_{90}$Zr$_{10}$ alloy were measured near the Curie temperature using the vibrating reed technique. The modulus shows softening around $T_c\approx 227K$ and the internal friction undergoes drastic increase at $T_c$. It is found that both the Young's modulus and the reciprocal of internal friction are inversely proportional to the magnetic susceptibility in the paramagnetic phase.
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Submitted 2 June, 1994;
originally announced June 1994.
