The Conflict Between Explainable and Accountable Decision-Making Algorithms
Authors:
Gabriel Lima,
Nina Grgić-Hlača,
** Keun Jeong,
Meeyoung Cha
Abstract:
Decision-making algorithms are being used in important decisions, such as who should be enrolled in health care programs and be hired. Even though these systems are currently deployed in high-stakes scenarios, many of them cannot explain their decisions. This limitation has prompted the Explainable Artificial Intelligence (XAI) initiative, which aims to make algorithms explainable to comply with l…
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Decision-making algorithms are being used in important decisions, such as who should be enrolled in health care programs and be hired. Even though these systems are currently deployed in high-stakes scenarios, many of them cannot explain their decisions. This limitation has prompted the Explainable Artificial Intelligence (XAI) initiative, which aims to make algorithms explainable to comply with legal requirements, promote trust, and maintain accountability. This paper questions whether and to what extent explainability can help solve the responsibility issues posed by autonomous AI systems. We suggest that XAI systems that provide post-hoc explanations could be seen as blameworthy agents, obscuring the responsibility of developers in the decision-making process. Furthermore, we argue that XAI could result in incorrect attributions of responsibility to vulnerable stakeholders, such as those who are subjected to algorithmic decisions (i.e., patients), due to a misguided perception that they have control over explainable algorithms. This conflict between explainability and accountability can be exacerbated if designers choose to use algorithms and patients as moral and legal scapegoats. We conclude with a set of recommendations for how to approach this tension in the socio-technical process of algorithmic decision-making and a defense of hard regulation to prevent designers from esca** responsibility.
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Submitted 11 May, 2022;
originally announced May 2022.
20 K superconductivity in heavily electron doped surface layer of FeSe bulk crystal
Authors:
J. J. Seo,
B. Y. Kim,
B. S. Kim,
J. K. Jeong,
J. M. Ok,
J. S. Kim,
J. D. Denlinger,
C. Kim,
Y. K. Kim
Abstract:
A superconducting transition temperature Tc as high as 100 K was recently discovered in 1 monolayer (1ML) FeSe grown on SrTiO3 (STO). The discovery immediately ignited efforts to identify the mechanism for the dramatically enhanced Tc from its bulk value of 7 K. Currently, there are two main views on the origin of the enhanced Tc; in the first view, the enhancement comes from an interfacial effect…
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A superconducting transition temperature Tc as high as 100 K was recently discovered in 1 monolayer (1ML) FeSe grown on SrTiO3 (STO). The discovery immediately ignited efforts to identify the mechanism for the dramatically enhanced Tc from its bulk value of 7 K. Currently, there are two main views on the origin of the enhanced Tc; in the first view, the enhancement comes from an interfacial effect while in the other it is from excess electrons with strong correlation strength. The issue is controversial and there are evidences that support each view. Finding the origin of the Tc enhancement could be the key to achieving even higher Tc and to identifying the microscopic mechanism for the superconductivity in iron-based materials. Here, we report the observation of 20 K superconductivity in the electron doped surface layer of FeSe. The electronic state of the surface layer possesses all the key spectroscopic aspects of the 1ML FeSe on STO. Without any interface effect, the surface layer state is found to have a moderate Tc of 20 K with a smaller gap opening of 4 meV. Our results clearly show that excess electrons with strong correlation strength alone cannot induce the maximum Tc, which in turn strongly suggests need for an interfacial effect to reach the enhanced Tc found in 1ML FeSe/STO.
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Submitted 14 December, 2015; v1 submitted 25 November, 2015;
originally announced November 2015.
