Showing 1–22 of 22 results for author: Jayakumar, H

Room-temperature photo-chromism of silicon vacancy centers in CVD diamond

Authors: Alexander Wood, Artur Lozovoi, Zi-Huai Zhang, Sachin Sharma, Gabriel I. López-Morales, Harishankar Jayakumar, Nathalie P. de Leon, Carlos A. Meriles

Abstract: The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states un… ▽ More The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV0 via the two-step capture of diffusing, photo-generated holes, a process we expose both through direct SiV0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. Further, we show that continuous red illumination induces the converse process, first transforming SiV0 into SiV-, then into SiV2-. Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing. △ Less

Submitted 23 November, 2022; originally announced November 2022.

Spin dynamics of a solid-state qubit in proximity to a superconductor

Authors: Richard Monge, Tom Delord, Nicholas Proscia, Zav Shotan, Harishankar Jayakumar, Jacob Henshaw, Pablo R. Zangara, Artur Lozovoi, Daniela Pagliero, Pablo D. Esquinazi, Toshu An, Inti Sodemann, Vinod M. Menon, Carlos A. Meriles

Abstract: A broad effort is underway to understand and harness the interaction between superconductors and spin-active color centers with an eye on the realization of hybrid quantum devices and novel imaging modalities of superconducting materials. Most work, however, overlooks the complex interplay between either system and the environment created by the color center host. Here we use an all-diamond scanni… ▽ More A broad effort is underway to understand and harness the interaction between superconductors and spin-active color centers with an eye on the realization of hybrid quantum devices and novel imaging modalities of superconducting materials. Most work, however, overlooks the complex interplay between either system and the environment created by the color center host. Here we use an all-diamond scanning probe to investigate the spin dynamics of a single nitrogen-vacancy (NV) center proximal to a high-critical-temperature superconducting film in the presence of a weak magnetic field. We find that the presence of the superconductor increases the NV spin coherence lifetime, a phenomenon we tentatively rationalize as a change in the electric noise due to a superconductor-induced redistribution of charge carriers near the NV site. We build on these findings to demonstrate transverse-relaxation-time-weighted imaging of the superconductor film. These results shed light on the complex surface dynamics governing the spin coherence of shallow NVs while simultaneously paving the route to new forms of noise spectroscopy and imaging of superconductors. △ Less

Submitted 15 July, 2022; originally announced July 2022.

Optical activation and detection of charge transport between individual color centers in room-temperature diamond

Authors: Artur Lozovoi, Harishankar Jayakumar, Damon Daw, Gyorgy Vizkelethy, Edward Bielejec, Marcus W. Doherty, Johannes Flick, Carlos A. Meriles

Abstract: Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence microscopy and magnetic resonance protocols to induce and probe charge transport between discrete sets of engineered nitrogen-vacancy (NV) centers in diamond, down to the level of individual defects. In our experiments, a… ▽ More Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence microscopy and magnetic resonance protocols to induce and probe charge transport between discrete sets of engineered nitrogen-vacancy (NV) centers in diamond, down to the level of individual defects. In our experiments, a "source" NV undergoes optically-driven cycles of ionization and recombination to produce a stream of photo-generated carriers, one of which we subsequently capture via a "target" NV several micrometers away. We use a spin-to-charge conversion scheme to encode the spin state of the source color center into the charge state of the target, in the process allowing us to set an upper bound to carrier injection from other background defects. We attribute our observations to the action of unscreened Coulomb potentials producing giant carrier capture cross-sections, orders of magnitude greater than those typically attained in ensemble measurements. Besides their fundamental interest, these results open intriguing prospects in the use of free carriers as a quantum bus to mediate effective interactions between paramagnetic defects in a solid-state chip. △ Less

Submitted 23 October, 2021; originally announced October 2021.

Journal ref: Nature Electronics 4, 717 (2021)

Investigation of photon emitters in Ce-implanted hexagonal boron nitride

Authors: Gabriel I. López-Morales, Mingxing Li, Alexander Hampel, Sitakanta Satapathy, Nicholas V. Proscia, Harishankar Jayakumar, Artur Lozovoi, Daniela Pagliero, Gustavo E. Lopez, Vinod M. Menon, Johannes Flick, Carlos A. Meriles

Abstract: Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence mi… ▽ More Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence microscopy at variable temperature to study a new class of point defects produced via cerium ion implantation in thin hBN flakes. We find that, to a significant fraction, emitters show bright room-temperature emission, and good optical stability suggesting the formation of Ce-based point defects. Using density functional theory (DFT) we calculate the emission properties of candidate emitters, and single out the CeVB center - formed by an interlayer Ce atom adjacent to a boron vacancy - as one possible microscopic model. Our results suggest an intriguing route to defect engineering that simultaneously exploits the singular properties of rare-earth ions and the versatility of two-dimensional material hosts. △ Less

Submitted 2 October, 2021; originally announced October 2021.

Journal ref: Optical Materials Express Vol. 11, Issue 10, pp. 3478-3485 (2021)

Probing metastable space-charge potentials in a wide bandgap semiconductor

Authors: Artur Lozovoi, Harishankar Jayakumar, Damon Daw, Ayesha Lakra, Carlos A. Meriles

Abstract: While the study of space charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide bandgap semiconductors with moderate to low concentrations of defects. Here we build on color centers in diamond both to locally inject carriers into the crystal and probe their evolution as they propagate in the presence of external… ▽ More While the study of space charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide bandgap semiconductors with moderate to low concentrations of defects. Here we build on color centers in diamond both to locally inject carriers into the crystal and probe their evolution as they propagate in the presence of external and internal potentials. We witness the formation of metastable charge patterns whose shape - and concomitant field - can be engineered through the timing of carrier injection and applied voltages. With the help of previously crafted charge patterns, we unveil a rich interplay between local and extended sources of space charge field, which we then exploit to show space-charge-induced carrier guiding. △ Less

Submitted 19 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Lett. 125, 256602 (2020)

Dark defect charge dynamics in bulk chemical-vapor-deposition-grown diamonds probed via nitrogen vacancy centers

Authors: A. Lozovoi, D. Daw, H. Jayakumar, C. A. Meriles

Abstract: Although chemical vapor deposition (CVD) is one of the preferred routes to synthetic diamond crystals, a full knowledge of the point defects produced during growth is still incomplete. Here we exploit the charge and spin properties of nitrogen-vacancy (NV) centers in type-1b CVD diamond to expose an optically and magnetically dark point defect, so far virtually unnoticed despite an abundance compa… ▽ More Although chemical vapor deposition (CVD) is one of the preferred routes to synthetic diamond crystals, a full knowledge of the point defects produced during growth is still incomplete. Here we exploit the charge and spin properties of nitrogen-vacancy (NV) centers in type-1b CVD diamond to expose an optically and magnetically dark point defect, so far virtually unnoticed despite an abundance comparable to (if not greater than) that of substitutional nitrogen. Indirectly-detected photo-luminescence spectroscopy indicates a donor state 1.6 eV above the valence band, although the defect's microscopic structure and composition remain elusive. Our results may prove relevant to the growing set of applications that rely on CVD-grown single crystal diamond. △ Less

Submitted 14 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Materials 4, 053602 (2020)

Long-term spin state storage using ancilla charge memories

Authors: Harishankar Jayakumar, Artur Lozovoi, Damon Daw, Carlos A. Meriles

Abstract: We articulate confocal microscopy and electron spin resonance to implement spin-to-charge conversion in a small ensemble of nitrogen-vacancy (NV) centers in bulk diamond, and demonstrate charge conversion of neighboring defects conditional on the NV spin state. We build on this observation to show time-resolved NV spin manipulation and ancilla-charge-aided NV spin state detection via integrated me… ▽ More We articulate confocal microscopy and electron spin resonance to implement spin-to-charge conversion in a small ensemble of nitrogen-vacancy (NV) centers in bulk diamond, and demonstrate charge conversion of neighboring defects conditional on the NV spin state. We build on this observation to show time-resolved NV spin manipulation and ancilla-charge-aided NV spin state detection via integrated measurements. Our results hint at intriguing opportunities in the search for enhanced forms of color-center-based metrology and information processing down to the limit of individual point defects. △ Less

Submitted 29 March, 2020; originally announced March 2020.

Room-temperature Single Photon Emitters in Cubic Boron Nitride Nanocrystals

Authors: Gabriel I. López-Morales, Aziza Almanakly, Sitakanta Satapathy, Nicholas V. Proscia, Harishankar Jayakumar, Valery N. Khabashesku, Pulickel M. Ajayan, Carlos A. Meriles, Vinod M. Menon

Abstract: Color centers in wide bandgap semiconductors are attracting broad attention as platforms for quantum technologies relying on room-temperature single-photon emission (SPE), and for nanoscale metrology applications building on the centers' response to electric and magnetic fields. Here, we demonstrate room-temperature SPE from defects in cubic boron nitride (cBN) nanocrystals, which we unambiguously… ▽ More Color centers in wide bandgap semiconductors are attracting broad attention as platforms for quantum technologies relying on room-temperature single-photon emission (SPE), and for nanoscale metrology applications building on the centers' response to electric and magnetic fields. Here, we demonstrate room-temperature SPE from defects in cubic boron nitride (cBN) nanocrystals, which we unambiguously assign to the cubic phase using spectrally resolved Raman imaging. These isolated spots show photoluminescence (PL) spectra with zero-phonon lines (ZPLs) within the visible region (496-700 nm) when subject to sub-bandgap laser excitation. Second-order autocorrelation of the emitted photons reveals antibunching with $g^{2}$ ~ 0.2 and a decay constant of 2.75 ns that is further confirmed through fluorescence lifetime measurements. The results presented herein prove the existence of optically addressable isolated quantum emitters originating from defects in cBN, making this material an interesting platform for opto-electronic devices and quantum applications. △ Less

Submitted 24 December, 2019; originally announced December 2019.

Comments: 7 pages, 3 figures

Scalable microcavity-coupled emitters in hexagonal boron nitride

Authors: Nicholas V. Proscia, Harishankar Jayakumar, Xiaochen Ge, Gabriel Lopez-Morales, Zav Shotan, Weidong Zhou, Carlos A. Meriles, Vinod M. Menon

Abstract: Scalable integration of bright emitters in quantum photonic structures is an important step in the broader quest to generate and manipulate single photons via compact solid-state devices. Unfortunately, implementations relying on material platforms that also serve as the emitter host often suffer from a trade-off between the desired emitter properties and the photonic system practicality and perfo… ▽ More Scalable integration of bright emitters in quantum photonic structures is an important step in the broader quest to generate and manipulate single photons via compact solid-state devices. Unfortunately, implementations relying on material platforms that also serve as the emitter host often suffer from a trade-off between the desired emitter properties and the photonic system practicality and performance. Here, we demonstrate 'pick and place' integration of a Silicon Nitride microdisk optical resonator with a bright emitter host in the form of 20nm thick hexagonal boron nitride (hBN).The film folds around the microdisk maximizing contact to ultimately form a composite hBN/Si3N4 structure. The local strain that develops in the hBN film at the resonator circumference deterministically activates a low density of SPEs within the whispering gallery mode volume of the microdisk. These conditions allow us to demonstrate cavity-mediated out-coupling and Purcell enhancement of emission from hBN color centers through the microdisk cavity modes. Our results pave the route toward the development of scalable quantum photonic circuits with independent emitter/resonator optimization for active and passive functionalities. △ Less

Submitted 15 June, 2019; originally announced June 2019.

Comments: 14 pages,7 figures

Journal ref: Nanophotonics, vol. 9, no. 9, 2020, pp. 2937-2944

Tunable amplification and cooling of a diamond resonator with a microscope

Authors: Harishankar Jayakumar, Behzad Khanaliloo, David P. Lake, Paul E. Barclay

Abstract: Controlling the dynamics of mechanical resonators is central to many quantum science and metrology applications. Optomechanical control of diamond resonators is attractive owing to diamond's excellent physical properties and its ability to host electronic spins that can be coherently coupled to mechanical motion. Using a confocal microscope, we demonstrate tunable amplification and dam** of a di… ▽ More Controlling the dynamics of mechanical resonators is central to many quantum science and metrology applications. Optomechanical control of diamond resonators is attractive owing to diamond's excellent physical properties and its ability to host electronic spins that can be coherently coupled to mechanical motion. Using a confocal microscope, we demonstrate tunable amplification and dam** of a diamond nanomechanical resonator's motion. Observation of both normal mode cooling from room temperature to 80K, and amplification into self--oscillations with $60\,μ\text{W}$ of optical power is observed via waveguide optomechanical readout. This system is promising for quantum spin-optomechanics, as it is predicted to enable optical control of stress-spin coupling with rates of $\sim$ 1 MHz (100 THz) to ground (excited) states of diamond nitrogen vacancy centers. △ Less

Submitted 10 March, 2021; v1 submitted 9 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. Applied 16, 014063 (2021)

Spin readout via spin-to-charge conversion in bulk diamond nitrogen-vacancy ensembles

Authors: Harishankar Jayakumar, Siddharth Dhomkar, Jacob Henshaw, Carlos A. Meriles

Abstract: We demonstrate optical readout of ensembles of nitrogen-vacancy(NV) center spins in a bulk diamond sample via spin-to-charge conversion. A high power 594 nm laser is utilized to selectively ionize these paramagnetic defects in the spin state with a contrast of up to 12%. In comparison with the conventional 520 nm spin readout, spin-to-charge-conversion-based readout provides higher signal-to-noise… ▽ More We demonstrate optical readout of ensembles of nitrogen-vacancy(NV) center spins in a bulk diamond sample via spin-to-charge conversion. A high power 594 nm laser is utilized to selectively ionize these paramagnetic defects in the spin state with a contrast of up to 12%. In comparison with the conventional 520 nm spin readout, spin-to-charge-conversion-based readout provides higher signal-to-noise ratio, with tenfold sensing measurement speedup for millisecond long pulse sequences. This level of performance was achieved for an NV- ionization of only 25%, limited by the ionization and readout laser powers. These observations pave the way to a range of high-sensitivity metrology applications where the use of NV- ensembles in bulk diamond has proven useful, including sensing and imaging of target materials overlaid on the diamond surface. △ Less

Submitted 19 September, 2018; originally announced September 2018.

Journal ref: Appl. Phys. Lett. 113, 122404 (2018)

Charge dynamics in near-surface, variable-density ensembles of nitrogen-vacancy centers in diamond

Authors: Siddharth Dhomkar, Harishankar Jayakumar, Pablo R. Zangara, Carlos A. Meriles

Abstract: Although the spin properties of superficial shallow nitrogen-vacancy (NV) centers have been the subject of extensive scrutiny, considerably less attention has been devoted to studying the dynamics of NV charge conversion near the diamond surface. Using multi-color confocal microscopy, here we show that near-surface point defects arising from high-density ion implantation dramatically increase the… ▽ More Although the spin properties of superficial shallow nitrogen-vacancy (NV) centers have been the subject of extensive scrutiny, considerably less attention has been devoted to studying the dynamics of NV charge conversion near the diamond surface. Using multi-color confocal microscopy, here we show that near-surface point defects arising from high-density ion implantation dramatically increase the ionization and recombination rates of shallow NVs compared to those in bulk diamond. Further, we find that these rates grow linearly not quadratically with laser intensity, indicative of single-photon processes enabled by NV state mixing with other defect states. Accompanying these findings we observe NV ionization and recombination in the dark, likely the result of charge transfer to neighboring traps. In spite of the altered charge dynamics, we show one can imprint rewritable, long-lasting patterns of charged-initialized, near-surface NVs over large areas, an ability that could be exploited for electrochemical biosensing or to optically store digital data sets with sub-diffraction resolution. △ Less

Submitted 30 June, 2018; originally announced July 2018.

Journal ref: Nano Lett. 18, 4046 (2018)

Near-deterministic activation of room temperature quantum emitters in hexagonal boron nitride

Authors: Nicholas V. Proscia, Zav Shotan, Harishankar Jayakumar, Prithvi Reddy, Michael Dollar, Audrius Alkauskas, Marcus Doherty, Carlos A. Meriles, Vinod M. Menon

Abstract: Applications of quantum science to computing, cryptography and imaging are on their way to becoming key next generation technologies. Owing to the high-speed transmission and exceptional noise properties of photons, quantum photonic architectures are likely to play a central role. A long-standing hurdle, however, has been the realization of robust, device-compatible single photon sources that can… ▽ More Applications of quantum science to computing, cryptography and imaging are on their way to becoming key next generation technologies. Owing to the high-speed transmission and exceptional noise properties of photons, quantum photonic architectures are likely to play a central role. A long-standing hurdle, however, has been the realization of robust, device-compatible single photon sources that can be activated and controlled on demand. Here we use strain engineering to create large arrays of quantum emitters in two-dimensional hexagonal boron nitride (hBN). The large energy gap inherent to this Van der Waals material stabilizes the emitters at room temperature within nanoscale regions defined by substrate-induced deformation of the flake. Combining analytical and numerical modeling we show that emitter activation is likely the result of carrier trap** in deformation potential wells localized near the points where the hBN flake reaches the highest curvature. These findings, therefore, hint at novel opportunities for the manipulation of single photon sources through the combined control of strain and external electrostatic potentials under ambient conditions. △ Less

Submitted 18 October, 2017; originally announced December 2017.

Integrated waveguides and deterministically positioned nitrogen vacancy centers in diamond created by femtosecond laser writing

Authors: J. P. Hadden, V. Bharadwaj, B. Sotillo, S. Rampini, R. Osellame, J. Witmer, H. Jayakumar, T. T. Fernandez, A. Chiappini, C. Armellini, M. Ferrari, R. Ramponi, P. E. Barclay, S. M. Eaton

Abstract: Diamond's nitrogen vacancy (NV) center is an optically active defect with long spin coherence times, showing great potential for both efficient nanoscale magnetometry and quantum information processing schemes. Recently, both the formation of buried 3D optical waveguides and high quality single NVs in diamond were demonstrated using the versatile femtosecond laser-writing technique. However, until… ▽ More Diamond's nitrogen vacancy (NV) center is an optically active defect with long spin coherence times, showing great potential for both efficient nanoscale magnetometry and quantum information processing schemes. Recently, both the formation of buried 3D optical waveguides and high quality single NVs in diamond were demonstrated using the versatile femtosecond laser-writing technique. However, until now, combining these technologies has been an outstanding challenge. In this work, we fabricate laser written photonic waveguides in quantum grade diamond which are aligned to within micron resolution to single laser-written NVs, enabling an integrated platform providing deterministically positioned waveguide-coupled NVs. This fabrication technology opens the way towards on-chip optical routing of single photons between NVs and optically integrated spin-based sensing. △ Less

Submitted 12 March, 2018; v1 submitted 20 January, 2017; originally announced January 2017.

Journal ref: Optics Letters 43(15):pp. 3586-3589 (2018)

Long-term data storage in diamond

Authors: Siddharth Dhomkar, Jacob Henshaw, Harishankar Jayakumar, Carlos A. Meriles

Abstract: The negatively-charged nitrogen-vacancy (NV-) center in diamond is the focus of widespread attention for applications ranging from quantum information processing to nanoscale metrology. Although most work so far has focused on the NV- optical and spin properties, control of the charge state promises complementary opportunities. One intriguing possibility is the long-term storage of information, a… ▽ More The negatively-charged nitrogen-vacancy (NV-) center in diamond is the focus of widespread attention for applications ranging from quantum information processing to nanoscale metrology. Although most work so far has focused on the NV- optical and spin properties, control of the charge state promises complementary opportunities. One intriguing possibility is the long-term storage of information, a notion we hereby introduce using NV rich, type-1b diamond. As a proof of principle, we use multi-color optical microscopy to read, write, and reset arbitrary data sets with 2-D binary bit density comparable to present digital-video-disk (DVD) technology. Leveraging on the singular dynamics of NV- ionization, we encode information on different planes of the diamond crystal with no cross talk, hence extending the storage capacity to three dimensions. Further, we correlate the center's charge state and nuclear spin polarization of the nitrogen host, and show that the latter is robust to a cycle of NV- ionization and recharge. In combination with super-resolution microscopy techniques, these observations provide a route towards sub-diffraction NV charge control, a regime where the storage capacity could exceed present technologies. △ Less

Submitted 27 October, 2016; originally announced October 2016.

Journal ref: Science Advances 2, e1600911 (2016)

Optical patterning of trapped charge in nitrogen-doped diamond

Authors: Harishankar Jayakumar, Jacob Henshaw, Siddharth Dhomkar, Daniela Pagliero, Abdelghani Laraoui, Neil B. Manson, Remus Albu, Marcus W. Doherty, Carlos A. Meriles

Abstract: The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be attained by optical excitation. Here we use two-color optical microscopy to investigate the dynamics of NV photo-ionization, charge diffusion, and trap** in type… ▽ More The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be attained by optical excitation. Here we use two-color optical microscopy to investigate the dynamics of NV photo-ionization, charge diffusion, and trap** in type-1b diamond. We combine fixed-point laser excitation and scanning fluorescence imaging to locally alter the concentration of negatively charged NVs, and to subsequently probe the corresponding redistribution of charge. We uncover the formation of spatial patterns of trapped charge, which we qualitatively reproduce via a model of the interplay between photo-excited carriers and atomic defects. Further, by using the NV as a probe, we map the relative fraction of positively charged nitrogen upon localized optical excitation. These observations may prove important to transporting quantum information between NVs or to develo** three-dimensional, charge-based memories. △ Less

Submitted 10 September, 2016; originally announced September 2016.

Journal ref: Nature Communications 7, 12660 (2016)

Efficient telecom to visible wavelength conversion in doubly resonant GaP microdisks

Authors: David P. Lake, Matthew Mitchell, Harishankar Jayakumar, Laís Fujii dos Santos, Davor Curic, Paul E. Barclay

Abstract: Resonant second harmonic generation between 1550 nm and 775 nm with outside efficiency $> 4.4\times10^{-4}\, \text{mW}^{-1}$ is demonstrated in a gallium phosphide microdisk cavity supporting high-$Q$ modes at visible ($Q \sim 10^4$) and infrared ($Q \sim 10^5$) wavelengths. The double resonance condition was satisfied through intracavity photothermal temperature tuning using $\sim 360\,μ$W of 155… ▽ More Resonant second harmonic generation between 1550 nm and 775 nm with outside efficiency $> 4.4\times10^{-4}\, \text{mW}^{-1}$ is demonstrated in a gallium phosphide microdisk cavity supporting high-$Q$ modes at visible ($Q \sim 10^4$) and infrared ($Q \sim 10^5$) wavelengths. The double resonance condition was satisfied through intracavity photothermal temperature tuning using $\sim 360\,μ$W of 1550 nm light input to a fiber taper and resonantly coupled to the microdisk. Above this pump power efficiency was observed to decrease. The observed behavior is consistent with a simple model for thermal tuning of the double resonance condition. △ Less

Submitted 11 January, 2016; v1 submitted 27 August, 2015; originally announced August 2015.

Comments: 6 pages, 4 figures

Single crystal diamond nanobeam waveguide optomechanics

Authors: Behzad Khanaliloo, Harishankar Jayakumar, Aaron C. Hryciw, David P. Lake, Hamidreza Kaviani, Paul E. Barclay

Abstract: Optomechanical devices sensitively transduce and actuate motion of nanomechanical structures using light. Single--crystal diamond promises to improve the performance of optomechanical devices, while also providing opportunities to interface nanomechanics with diamond color center spins and related quantum technologies. Here we demonstrate dissipative waveguide--optomechanical coupling exceeding 35… ▽ More Optomechanical devices sensitively transduce and actuate motion of nanomechanical structures using light. Single--crystal diamond promises to improve the performance of optomechanical devices, while also providing opportunities to interface nanomechanics with diamond color center spins and related quantum technologies. Here we demonstrate dissipative waveguide--optomechanical coupling exceeding 35 GHz/nm to diamond nanobeams supporting both optical waveguide modes and mechanical resonances, and use this optomechanical coupling to measure nanobeam displacement with a sensitivity of $9.5$ fm/$\sqrt{\text{Hz}}$ and optical bandwidth $>150$nm. The nanobeams are fabricated from bulk optical grade single--crystal diamond using a scalable undercut etching process, and support mechanical resonances with quality factor $2.5 \times 10^5$ at room temperature, and $7.2 \times 10^5$ in cryogenic conditions (5K). Mechanical self--oscillations, resulting from interplay between photothermal and optomechanical effects, are observed with amplitude exceeding 200 nm for sub-$μ$W absorbed optical power, demonstrating the potential for optomechanical excitation and manipulation of diamond nanomechanical structures. △ Less

Submitted 28 April, 2015; v1 submitted 5 February, 2015; originally announced February 2015.

Comments: Minor changes. Corrected error in units of applied stress in Fig. 10

Journal ref: Phys. Rev. X 5, 041051 (2015)

Dissipative and Dispersive Optomechanics in a Nanocavity Torque Sensor

Authors: Marcelo Wu, Aaron C. Hryciw, Chris Healey, David P. Lake, Harishankar Jayakumar, Mark R. Freeman, John P. Davis, Paul E. Barclay

Abstract: Dissipative and dispersive optomechanical couplings are experimentally observed in a photonic crystal split-beam nanocavity optimized for detecting nanoscale sources of torque. Dissipative coupling of up to approximately $500$ MHz/nm and dispersive coupling of $2$ GHz/nm enable measurements of sub-pg torsional and cantilever-like mechanical resonances with a thermally-limited torque detection sens… ▽ More Dissipative and dispersive optomechanical couplings are experimentally observed in a photonic crystal split-beam nanocavity optimized for detecting nanoscale sources of torque. Dissipative coupling of up to approximately $500$ MHz/nm and dispersive coupling of $2$ GHz/nm enable measurements of sub-pg torsional and cantilever-like mechanical resonances with a thermally-limited torque detection sensitivity of 1.2$\times 10^{-20} \text{N} \, \text{m}/\sqrt{\text{Hz}}$ in ambient conditions and 1.3$\times 10^{-21} \text{N} \, \text{m}/\sqrt{\text{Hz}}$ in low vacuum. Interference between optomechanical coupling mechanisms is observed to enhance detection sensitivity and generate a mechanical-mode-dependent optomechanical wavelength response. △ Less

Submitted 5 September, 2014; v1 submitted 25 March, 2014; originally announced March 2014.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. X 4 , 021052 (2014)

Time-bin entangled photons from a quantum dot

Authors: Harishankar Jayakumar, Ana Predojević, Thomas Kauten, Tobias Huber, Glenn S. Solomon, Gregor Weihs

Abstract: Long distance quantum communication is one of the prime goals in the field of quantum information science. With information encoded in the quantum state of photons, existing telecommunication fiber networks can be effectively used as a transport medium. To achieve this goal, a source of robust entangled single photon pairs is required. While time-bin entanglement offers the required robustness, cu… ▽ More Long distance quantum communication is one of the prime goals in the field of quantum information science. With information encoded in the quantum state of photons, existing telecommunication fiber networks can be effectively used as a transport medium. To achieve this goal, a source of robust entangled single photon pairs is required. While time-bin entanglement offers the required robustness, currently used parametric down-conversion sources have limited performance due to multi-pair contributions. We report the realization of a source of single time-bin entangled photon pairs utilizing the biexciton-exciton cascade in a III/V self-assembled quantum dot. We analyzed the generated photon pairs by an inherently phase-stable interferometry technique, facilitating uninterrupted long integration times. We confirmed the entanglement by performing a quantum state tomography of the emitted photons, which yielded a fidelity of 0.69(3) and a concurrence of 0.41(6). △ Less

Submitted 9 January, 2014; v1 submitted 9 May, 2013; originally announced May 2013.

Comments: 6 pages, 5 figures

Efficiency vs. multi-photon contribution test for quantum dots

Authors: Ana Predojevic, Miroslav Jezek, Tobias Huber, Harishankar Jayakumar, Thomas Kauten, Glenn S. Solomon, Radim Filip, Gregor Weihs

Abstract: The development of linear quantum computing within integrated circuits demands high quality semiconductor single photon sources. In particular, for a reliable single photon source it is not sufficient to have a low multi-photon component, but also to possess high efficiency. We investigate the photon statistics of the emission from a single quantum dot with a method that is able to sensitively det… ▽ More The development of linear quantum computing within integrated circuits demands high quality semiconductor single photon sources. In particular, for a reliable single photon source it is not sufficient to have a low multi-photon component, but also to possess high efficiency. We investigate the photon statistics of the emission from a single quantum dot with a method that is able to sensitively detect the trade-off between the efficiency and the multi-photon contribution. Our measurements show, that the light emitted from the quantum dot when it is resonantly excited possess a very low multi-photon content. Additionally, we demonstrated, for the first time, the non-Gaussian nature of the quantum state emitted from a single quantum dot. △ Less

Submitted 19 March, 2014; v1 submitted 13 November, 2012; originally announced November 2012.

Comments: This paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the bellow given URL on the OSA website. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law

Journal ref: Optics Express, Vol. 22, Issue 4, pp. 4789-4798 (2014)

Deterministic Photon Pairs via Coherent Optical Control of a Single Quantum Dot

Authors: Harishankar Jayakumar, Ana Predojević, Tobias Huber, Thomas Kauten, Glenn S. Solomon, Gregor Weihs

Abstract: The strong confinement of semiconductor excitons in a quantum dot gives rise to atom-like behavior. The full benefit of such a structure is best observed in resonant excitation where the excited state can be deterministically populated and coherently manipulated. Due to large refractive index and device geometry it remains challenging to observe resonantly excited emission that is free from laser… ▽ More The strong confinement of semiconductor excitons in a quantum dot gives rise to atom-like behavior. The full benefit of such a structure is best observed in resonant excitation where the excited state can be deterministically populated and coherently manipulated. Due to large refractive index and device geometry it remains challenging to observe resonantly excited emission that is free from laser scattering in III/V self-assembled quantum dots. Here we exploit the biexciton binding energy to create an extremely clean single photon source via two-photon resonant excitation of an InAs/GaAs quantum dot. We observe complete suppression of the excitation laser and multi-photon emissions. Additionally, we perform full coherent control of the ground-biexciton state qubit and observe an extended coherence time using an all-optical echo technique. The deterministic coherent photon pair creation makes this system suitable for the generation of time-bin entanglement and experiments on the interaction of photons from dissimilar sources. △ Less

Submitted 12 November, 2012; originally announced November 2012.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Lett. 110, 135505, 2013