Showing 1–32 of 32 results for author: Javey, A

Carbon nanotube substrates enhance SARS-CoV-2 spike protein ion yields in matrix assisted laser desorption-ionization mass spectrometry

Authors: T. Schenkel, A. M. Snijders, K. Nakamura, P. A. Seidl, B. Mak, L. Obst-Huebl, H. Knobel, I. Pong, A. Persaud, J. van Tilborg, T. Ostermayr, S. Steinke, E. A. Blakely, Q. Ji, A. Javey, R. Kapadia, C. G. R. Geddes, E. Esarey

Abstract: Nanostructured surfaces enhance ion yields in matrix assisted laser desorption-ionization mass spectrometry (MALDI-MS). The spike protein complex, S1, is one fingerprint signature of Sars-CoV-2 with a mass of 75 kDa. Here, we show that MALDI-MS yields of Sars-CoV-2 spike protein ions in the 100 kDa range are enhanced 50-fold when the matrix-analyte solution is placed on substrates that are coated… ▽ More Nanostructured surfaces enhance ion yields in matrix assisted laser desorption-ionization mass spectrometry (MALDI-MS). The spike protein complex, S1, is one fingerprint signature of Sars-CoV-2 with a mass of 75 kDa. Here, we show that MALDI-MS yields of Sars-CoV-2 spike protein ions in the 100 kDa range are enhanced 50-fold when the matrix-analyte solution is placed on substrates that are coated with a dense forest of multi-walled carbon nanotubes, compared to yields from uncoated substrates. Nanostructured substrates can support the development of mass spectrometry techniques for sensitive pathogen detection and environmental monitoring. △ Less

Submitted 10 October, 2022; originally announced October 2022.

Platform-agnostic waveguide integration of high-speed photodetectors with evaporated tellurium thin films

Authors: Geun Ho Ahn, Alexander D. White, Hyung** Kim, Naoki Higashitarumizu, Felix M. Mayor, Jason F. Herrmann, Wentao Jiang, Kevin K. S. Multani, Amir H. Safavi-Naeini, Ali Javey, Jelena Vučković

Abstract: Many attractive photonics platforms still lack integrated photodetectors due to inherent material incompatibilities and lack of process scalability, preventing their widespread deployment. Here we address the problem of scalably integrating photodetectors in a photonic platform-independent manner. Using a thermal evaporation and deposition technique developed for nanoelectronics, we show that tell… ▽ More Many attractive photonics platforms still lack integrated photodetectors due to inherent material incompatibilities and lack of process scalability, preventing their widespread deployment. Here we address the problem of scalably integrating photodetectors in a photonic platform-independent manner. Using a thermal evaporation and deposition technique developed for nanoelectronics, we show that tellurium (Te), a quasi-2D semi-conductive element, can be evaporated at low temperature directly onto photonic chips to form air-stable, high-responsivity, high-speed, ultrawide-band photodetectors. We demonstrate detection at visible, telecom, and mid-infrared wavelengths, a bandwidth of more than 40 GHz, and platform-independent scalable integration with photonic structures in silicon, silicon nitride and lithium niobate. △ Less

Submitted 8 September, 2022; originally announced September 2022.

Inhibited nonradiative decay at all exciton densities in monolayer semiconductors

Authors: Hyung** Kim, Shiekh Zia Uddin, Naoki Higashitarumizu, Eran Rabani, Ali Javey

Abstract: Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition-metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY at low exc… ▽ More Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition-metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY at low exciton densities, nonradiative exciton-exciton annihilation (EEA) enhanced by van-Hove singularity (VHS) rapidly degrades their PL QY at high exciton densities and limits their utility in practical applications. Here, by applying small mechanical strain (< 1%), we circumvent VHS resonance and drastically suppress EEA in monolayer TMDCs, resulting in near-unity PL QY at all exciton densities despite the presence of a high native defect density. Our findings can enable light-emitting devices that retain high efficiency at all brightnesses. △ Less

Submitted 22 July, 2021; originally announced July 2021.

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

Authors: Der-Hsien Lien, Shiekh Zia Uddin, Matthew Yeh, Matin Amani, Hyung** Kim, Joel W. Ager III, Eli Yablonovitch, Ali Javey

Abstract: Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect… ▽ More Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic by electrostatic do**, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased. △ Less

Submitted 8 May, 2019; originally announced May 2019.

Suppressing Diffusion-Mediated Exciton Annihilation in 2D Semiconductors Using the Dielectric Environment

Authors: Aaron J. Goodman, Der-Hsien Lien, Geun Ho Ahn, Leo L. Spiegel, Matin Amani, Adam P. Willard, Ali Javey, William A. Tisdale

Abstract: Atomically thin semiconductors such as monolayer MoS2 and WS2 exhibit nonlinear exciton-exciton annihilation at notably low excitation densities (below ~10 excitons/um2 in MoS2). Here, we show that the density threshold at which annihilation occurs can be tuned by changing the underlying substrate. When the supporting substrate is changed from SiO2 to Al2O3 or SrTiO3, the rate constant for second-… ▽ More Atomically thin semiconductors such as monolayer MoS2 and WS2 exhibit nonlinear exciton-exciton annihilation at notably low excitation densities (below ~10 excitons/um2 in MoS2). Here, we show that the density threshold at which annihilation occurs can be tuned by changing the underlying substrate. When the supporting substrate is changed from SiO2 to Al2O3 or SrTiO3, the rate constant for second-order exciton-exciton annihilation, k_XX [cm2/s], is reduced by one or two orders of magnitude, respectively. Using transient photoluminescence microscopy, we measure the effective room-temperature exciton diffusion coefficient in chemical-treated MoS2 to be D = 0.06 +/- 0.01 cm2/s, corresponding to a diffusion length of LD = 350 nm for an exciton lifetime of τ = 20 ns, which is independent of the substrate. These results, together with numerical simulations, suggest that the effective exciton-exciton annihilation radius monotonically decreases with increasing refractive index of the underlying substrate. Exciton-exciton annihilation limits the overall efficiency of 2D semiconductor devices operating at high exciton densities; the ability to tune these interactions via the dielectric environment is an important step toward more efficient optoelectronic technologies featuring atomically thin materials. △ Less

Submitted 2 November, 2018; originally announced November 2018.

Characterization of free standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

Authors: G. Conti, S. Nemšák, C. -T. Kuo, M. Gehlmann, C. Conlon, A. Keqi, A. Rattanachata, O. Karslıoğlu, J. Mueller, J. Sethian, H. Bluhm, J. E. Rault, J. P. Rueff, H. Fang, A. Javey, C. S. Fadley

Abstract: Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By co… ▽ More Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with angstrom precision. We determined that: i) the exposure to air induced the formation of an InAsO$_4$ layer on top of the stoichiometric InAs(QM); ii) the top interface between the air-side InAsO$_4$ and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; iii) the bottom interface between the InAs(QM) and the native oxide SiO$_2$ on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO$_2$/(Si/Mo) substrate was determined by HXPS. The value of $VBO = 0.2 \pm 0.04$ eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO$_2$ heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials. △ Less

Submitted 16 January, 2018; originally announced January 2018.

Comments: three figures

Compliant substrate epitaxy: Au on MoS$_2$

Authors: Yuzhi Zhou, Daisuke Kiriya, Eugene E. Haller, Joel W. Ager III, Ali Javey, Daryl C. Chrzan

Abstract: The epitaxial growth of {111} oriented Au on MoS$_2$ is well documented despite the large lattice mismatch (~8% biaxial strain), and the fact that a Au {001} orientation results in much less elastic strain. An analysis based on density functional and linear elasticity theories reveals that the {111} orientation is stabilized by a combination of favorable surface and interfacial contributions to th… ▽ More The epitaxial growth of {111} oriented Au on MoS$_2$ is well documented despite the large lattice mismatch (~8% biaxial strain), and the fact that a Au {001} orientation results in much less elastic strain. An analysis based on density functional and linear elasticity theories reveals that the {111} orientation is stabilized by a combination of favorable surface and interfacial contributions to the energy, and the compliance of the first layer of the MoS$_2$. △ Less

Submitted 5 June, 2015; v1 submitted 27 May, 2015; originally announced May 2015.

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Authors: Hui Fang, Corsin Battaglia, Carlo Carraro, Slavomir Nemsak, Burak Ozdol, Jeong Seuk Kang, Hans A. Bechtel, Sujay B. Desai, Florian Kronast, Ahmet A. Unal, Giuseppina Conti, Catherine Conlon, Gunnar K. Palsson, Michael C. Martin, Andrew M. Minor, Charles S. Fadley, Eli Yablonovitch, Roya Maboudian, Ali Javey

Abstract: Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures,… ▽ More Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single layer WSe2 and MoS2 building blocks. We observe a large Stokes-like shift of ~100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment with spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN (h-BN) dielectric layers into the vdW gap. The generic nature of this interlayer coupling consequently provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers. △ Less

Submitted 14 April, 2014; v1 submitted 15 March, 2014; originally announced March 2014.

Comments: http://www.pnas.org/content/early/2014/04/10/1405435111.abstract

MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts

Authors: Steven Chuang, Corsin Battaglia, Angelica Azcatl, Stephen McDonnell, Jeong Seuk Kang, Xingtian Yin, Mahmut Tosun, Rehan Kapadia, Hui Fang, Robert M. Wallace, Ali Javey

Abstract: The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band of M… ▽ More The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band of MoS2, thus resulting in large Schottky barrier heights for holes with limited hole injection from the contacts. Here, we show that substoichiometric molybdenum trioxide (MoOx, x<3), a high workfunction material, acts as an efficient hole injection layer to MoS2 and WSe2. In particular, we demonstrate MoS2 p-type field-effect transistors and diodes by using MoOx contacts. We also show drastic on-current improvement for p-type WSe2 FETs with MoOx contacts over devices made with Pd contacts, which is the prototypical metal used for hole injection. The work presents an important advance in contact engineering of TMDCs and will enable future exploration of their performance limits and intrinsic transport properties. △ Less

Submitted 26 February, 2014; originally announced February 2014.

High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

Authors: Hui Fang, Steven Chuang, Ting Chia Chang, Kuniharu Takei, Toshitake Takahashi, Ali Javey

Abstract: We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ~250 cm2/Vs, perfect subthreshold swing of ~60 mV/dec, and ION/IOFF of >10^6 at room temperature. Special attention is… ▽ More We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ~250 cm2/Vs, perfect subthreshold swing of ~60 mV/dec, and ION/IOFF of >10^6 at room temperature. Special attention is given to lowering the contact resistance for hole injection by using high work function Pd contacts along with degenerate surface do** of the contacts by patterned NO2 chemisorption on WSe2. The results here present a promising material system and device architecture for p-type monolayer transistors with excellent characteristics. △ Less

Submitted 21 June, 2012; originally announced June 2012.

Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors

Authors: Junghyo Nah, S. Bala Kumar, Hui Fang, Yu-Ze Chen, Elena Plis, Yu-Lun Chueh, Sanjay Krishna, **g Guo, Ali Javey

Abstract: We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed… ▽ More We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena. △ Less

Submitted 19 April, 2012; originally announced April 2012.

Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires

Authors: Alexandra C. Ford, S. Bala Kumar, Rehan Kapadia, **g Guo, Ali Javey

Abstract: One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and attributed to the electron transport through individual 1D sub-bands. The two-fold degeneracy in certain sub-band energies predicted by simulation due to struc… ▽ More One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and attributed to the electron transport through individual 1D sub-bands. The two-fold degeneracy in certain sub-band energies predicted by simulation due to structural symmetry is experimentally observed for the first time. The experimentally obtained sub-band energies match the simulated results, shedding light on both the energies of the sub-bands as well as the number of sub-bands populated per given gate voltage and diameter. This work serves to provide better insight into the electrical transport behavior of 1D semiconductors. △ Less

Submitted 3 February, 2012; originally announced February 2012.

Comments: 20 pages, 5 figures, supporting information included

Journal ref: Nano Letters 2012 ASAP

Highly Quantum-Confined InAs Nanoscale Membranes

Authors: Kuniharu Takei, Hui Fang, Bala Kumar, Rehan Kapadia, Qun Gao, Morten Madsen, Ha Sul Kim, Chin-Hung Liu, Elena Plis, Sanjay Krishna, Hans A. Bechtel, **g Guo, Ali Javey

Abstract: Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the qu… ▽ More Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field- and thickness-dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance towards establishing the fundamental device physics of 2-D semiconductors. △ Less

Submitted 13 September, 2011; originally announced September 2011.

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Authors: Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia, Steven Chuang, Hui Fang, Paul W. Leu, Kartik Ganapathi, Elena Plis, Ha Sul Kim, Szu-Ying Chen, Morten Madsen, Alexandra C. Ford, Yu-Lun Chueh, Sanjay Krishna, Sayeef Salahuddin, Ali Javey

Abstract: Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established… ▽ More Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/μm at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 μm. △ Less

Submitted 4 August, 2011; originally announced August 2011.

Journal ref: Nature, Vol. 468, p.286, 2010

Dramatic reduction of surface recombination by in-situ surface passivation of silicon nanowires

Authors: Ya** Dan, Kwanyong Seo, Kuniharu Takei, Jhim H. Meza, Ali Javey, Kenneth B. Crozier

Abstract: Nanowires have unique optical properties [1-4] and are considered as important building blocks for energy harvesting applications such as solar cells. [2, 5-8] However, due to their large surface-to-volume ratios, the recombination of charge carriers through surface states reduces the carrier diffusion lengths in nanowires a few orders of magnitude,[9] often resulting in the low efficiency (a few… ▽ More Nanowires have unique optical properties [1-4] and are considered as important building blocks for energy harvesting applications such as solar cells. [2, 5-8] However, due to their large surface-to-volume ratios, the recombination of charge carriers through surface states reduces the carrier diffusion lengths in nanowires a few orders of magnitude,[9] often resulting in the low efficiency (a few percent or less) of nanowire-based solar cells. [7, 8, 10, 11] Reducing the recombination by surface passivation is crucial for the realization of high performance nanosized optoelectronic devices, but remains largely unexplored. [7, 12-14] Here we show that a thin layer of amorphous silicon (a-Si) coated on a single-crystalline silicon nanowire (sc-SiNW), forming a core-shell structure in-situ in the vapor-liquid-solid (VLS) process, reduces the surface recombination nearly two orders of magnitude. Under illumination of modulated light, we measure a greater than 90-fold improvement in the photosensitivity of individual core-shell nanowires, compared to regular nanowires without shell. Simulations of the optical absorption of the nanowires indicate that the strong absorption of the a-Si shell contributes to this effect, but we conclude that the effect is mainly due to the enhanced carrier lifetime by surface passivation. △ Less

Submitted 25 May, 2011; originally announced May 2011.

Journal ref: Nano Letter 11(5), 2011

Development of a Compact Neutron Source based on Field Ionization Processes

Authors: Arun Persaud, Ian Allen, Michael R. Dickinson, Rehan Kapadia, Kuniharu Takei, and Ali Javey, Thomas Schenkel

Abstract: The authors report on the use of carbon nanofiber nanoemitters to ionize deuterium atoms for the generation of neutrons in a deuterium-deuterium reaction in a preloaded target. Acceleration voltages in the range of 50-80 kV are used. Field emission of electrons is investigated to characterize the emitters. The experimental setup and sample preparation are described and first data of neutron produc… ▽ More The authors report on the use of carbon nanofiber nanoemitters to ionize deuterium atoms for the generation of neutrons in a deuterium-deuterium reaction in a preloaded target. Acceleration voltages in the range of 50-80 kV are used. Field emission of electrons is investigated to characterize the emitters. The experimental setup and sample preparation are described and first data of neutron production are presented. Ongoing experiments to increase neutron production yields by optimizing the field emitter geometry and surface conditions are discussed. △ Less

Submitted 20 January, 2011; v1 submitted 11 October, 2010; originally announced October 2010.

Comments: 4 pages, 5 figures; IVNC 2010

Journal ref: J.Vac.Sci.Technol.B Microelectron.Nanometer Struct.29:02B107,2011

Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Do** and Conventional Spike Annealing

Authors: Johnny C. Ho, Roie Yerushalmi, Gregory Smith, Prashant Majhi, Joseph Bennett, Jeffri Halim, Vladimir N. Faifer, Ali Javey

Abstract: We report the formation of sub-5 nm ultrashallow junctions in 4 inch Si wafers enabled by the molecular monolayer do** of phosphorous and boron atoms and the use of conventional spike annealing. The junctions are characterized by secondary ion mass spectrometry and non-contact sheet resistance measurements. It is found that the majority (~70%) of the incorporated dopants are electrically activ… ▽ More We report the formation of sub-5 nm ultrashallow junctions in 4 inch Si wafers enabled by the molecular monolayer do** of phosphorous and boron atoms and the use of conventional spike annealing. The junctions are characterized by secondary ion mass spectrometry and non-contact sheet resistance measurements. It is found that the majority (~70%) of the incorporated dopants are electrically active, therefore, enabling a low sheet resistance for a given dopant areal dose. The wafer-scale uniformity is investigated and found to be limited by the temperature homogeneity of the spike anneal tool used in the experiments. Notably, minimal junction leakage currents (<1 uA/cm2) are observed which highlights the quality of the junctions formed by this process. The results clearly demonstrate the versatility and potency of the monolayer do** approach for enabling controlled, molecular-scale ultrashallow junction formation without introducing defects in the semiconductor. △ Less

Submitted 10 January, 2009; originally announced January 2009.

Comments: 21 pages, 5 figures

Diameter-Dependent Electron Mobility of InAs Nanowires

Authors: Alexandra Ford, Johnny Ho, Yu-Lun Chueh, Yu-Chih Tseng, Zhiyong Fan, **g Guo, Jeffrey Bokor, Ali Javey

Abstract: Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally-activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are i… ▽ More Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally-activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are investigated while enabling the accurate measurement of the gate oxide capacitance; therefore, leading to the direct assessment of the field-effect mobility for electrons. The field-effect mobility is found to monotonically decrease as the radius is reduced to sub-10 nm, with the low temperature transport data clearly highlighting the drastic impact of the surface roughness scattering on the mobility degradation for miniaturized nanowires. More generally, the approach presented here may serve as a versatile and powerful platform for in-depth characterization of nanoscale, electronic materials. △ Less

Submitted 3 December, 2008; originally announced December 2008.

Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Authors: Alexandra C. Ford, Johnny C. Ho, Zhiyong Fan, Onur Ergen, Virginia Altoe, Shaul Aloni, Haleh Razavi, Ali Javey

Abstract: InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation. The catalytic growth of non-epitaxial InAs nanowires, however, has often relied on the use of Au colloids which is non-CMOS compatible. Here, we demonstrate the successful synthesis of high yield of crystalline InAs n… ▽ More InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation. The catalytic growth of non-epitaxial InAs nanowires, however, has often relied on the use of Au colloids which is non-CMOS compatible. Here, we demonstrate the successful synthesis of high yield of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on amorphous SiO2 substrates. The nanowires show superb electrical properties with field-effect electron mobility ~2,700 cm2/Vs and ION/IOFF >103. The uniformity and purity of the grown InAs nanowires are further demonstrated by large-scale assembly of parallel arrays of nanowires on substrates via the contact printing process that enables high performance, printable transistors, capable of delivering 5-10 mA ON currents (~400 nanowires). △ Less

Submitted 7 July, 2008; originally announced July 2008.

Comments: 21 pages, 5 figures included, all in .docx format. Nano Research (In Press)

Wafer-Scale Assembly of Semiconductor Nanowire Arrays by Contact Printing

Authors: Zhiyong Fan, Johnny C. Ho, Zachery A. Jacobson, Roie Yerushalmi, Robert L. Alley, Haleh Razavi, Ali Javey

Abstract: Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability has been one of the significant bottleneck challenges facing the potential integration of nanowires for both nano and macro electronic circuit applications. Many efforts have focused on tackling this challenge, and while significant progress has been made, still most presented approaches lack either the… ▽ More Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability has been one of the significant bottleneck challenges facing the potential integration of nanowires for both nano and macro electronic circuit applications. Many efforts have focused on tackling this challenge, and while significant progress has been made, still most presented approaches lack either the desired controllability in the positioning of nanowires or the needed uniformity over large scales. Here, we demonstrate wafer-scale assembly of highly ordered, dense, and regular arrays of NWs with high uniformity and reproducibility through a simple contact printing process. We demonstrate contact printing as a versatile strategy for direct transfer and controlled positioning of various NW materials into complex structural configurations on substrates. The assembled NW pitch is shown to be readily modulated through the surface chemical treatment of the receiver substrate, with the highest density approaching ~8 NW/um, ~95% directional alignment and wafer-scale uniformity. Furthermore, we demonstrate that our printing approach enables large-scale integration of NW arrays for various device structures on both Si and plastic substrates, with a controlled semiconductor channel width, and therefore ON current, ranging from a single NW (~10 nm) and up to ~250 um, consisting of a parallel array of over 1,250 NWs. △ Less

Submitted 29 December, 2007; originally announced January 2008.

Comments: 14 pages,4 figures

Journal ref: Nano Letters, Vol. 8, Iss. 1, 2008

Ultra-High Yield Growth of Vertical Single-Walled Carbon Nanotubes: Hidden Roles of Hydrogen and Oxygen

Authors: Guangyu Zhang, David Mann, Li Zhang, Ali Javey, Yiming Li, Erhan Yenilmez, Qian Wang, James McVittie, Yoshio Nishi, James Gibbons, Hongjie Dai

Abstract: An oxygen assisted hydrocarbon chemical vapor deposition (CVD) method is developed to afford large-scale highly reproducible ultra high-yield growth of vertical single-walled carbon nanotubes (SWNT). It is revealed that reactive hydrogen (H)-species, inevitable in hydrocarbon-based growth, are damaging to the formation of sp2-like SWNTs. The addition of oxygen scavenges H-species and provides a… ▽ More An oxygen assisted hydrocarbon chemical vapor deposition (CVD) method is developed to afford large-scale highly reproducible ultra high-yield growth of vertical single-walled carbon nanotubes (SWNT). It is revealed that reactive hydrogen (H)-species, inevitable in hydrocarbon-based growth, are damaging to the formation of sp2-like SWNTs. The addition of oxygen scavenges H-species and provides a powerful control over the C/H ratio to favor SWNT growth. The revelation of the roles played by hydrogen and oxygen leads to a unified and universal optimum growth condition for SWNTs. Further, a versatile method is developed to form vertical SWNT films on any substrate, lifting a major substrate-type limitation for aligned SWNTs. △ Less

Submitted 1 November, 2005; originally announced November 2005.

Comments: 14 pages of text and 6 figures

Journal ref: PNAS v102, 16141-16145 (2005)

Deterministic Synthesis of Carbon Nanotubes

Authors: Ali Javey, Hongjie Dai

Abstract: A novel method is developed to enable the formation, positioning and patterning of individual metal nano-clusters with controllable and monodispersed sizes down to 1-2 nm-scale. Among wide range of potential applications, the nanoparticle arrays are used for deterministic synthesis of monodispersed single walled carbon nanotubes. The carbon nanotubes are grown at individually controlled location… ▽ More A novel method is developed to enable the formation, positioning and patterning of individual metal nano-clusters with controllable and monodispersed sizes down to 1-2 nm-scale. Among wide range of potential applications, the nanoparticle arrays are used for deterministic synthesis of monodispersed single walled carbon nanotubes. The carbon nanotubes are grown at individually controlled locations with near one-to-one yield, reaching one of the ultimate goals of nanotube synthesis. △ Less

Submitted 28 July, 2005; originally announced July 2005.

Comments: 3 pages, 4 color figures. JACS, in press

Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter

Authors: Woong Kim, Ali Javey, Ryan Tu, Jien Cao, Qian Wang, Hongjie Dai

Abstract: Rhodium (Rh) is found similar to Palladium (Pd) in making near-ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d > ~ 1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S-SWNTs) with d < ~ 1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors (FETs) and SB heights at the contac… ▽ More Rhodium (Rh) is found similar to Palladium (Pd) in making near-ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d > ~ 1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S-SWNTs) with d < ~ 1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors (FETs) and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters < ~ 1.0 nm possibly due to tunnel barriers. △ Less

Submitted 31 August, 2005; v1 submitted 17 May, 2005; originally announced May 2005.

Comments: Applied Physics Letters, in press

High Performance N-Type Carbon Nanotube Field Effect Transistors with Chemically Doped Contacts

Authors: Ali Javey, Ryan Tu, Damon Farmer, **g Guo, Roy Gordon, Hongjie Dai

Abstract: Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm and bandgap ~ 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold… ▽ More Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm and bandgap ~ 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold swing of 70mV/decade, negligible ambipolar conduction and high on/off ratios up to 10^6 at a bias voltage of 0.5V. The results compare favorably with the state-of-the-art silicon n-MOSFETs and demonstrate the potential of SWNTs for future complementary electronics. The effects of do** level on the electrical characteristics of the nanotube devices are discussed. △ Less

Submitted 6 January, 2005; v1 submitted 14 December, 2004; originally announced December 2004.

Comments: Nano Lett, in press, 2004

10 to 50 nm Long Quasi Ballistic Carbon Nanotube Devices Obtained Without Complex Lithography

Authors: Ali Javey, Pengfei Qi, Qian Wang, Hongjie Dai

Abstract: A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices are obtained without the need of complex tools such as electron beam lithography. Metallic SWCNTs with lengths ~ 10 nm, near the mean free path (mfp) of lop~15… ▽ More A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices are obtained without the need of complex tools such as electron beam lithography. Metallic SWCNTs with lengths ~ 10 nm, near the mean free path (mfp) of lop~15 nm for optical phonon scattering, exhibit near-ballistic transport at high biases and can carry unprecedented 100 mA currents per tube. Semiconducting SWCNT field-effect transistors (FETs) with ~ 50 nm channel lengths are routinely produced to achieve quasi-ballistic operations for molecular transistors. The results demonstrate highly length-scaled and high-performance interconnects and transistors realized with SWCNTs. △ Less

Submitted 7 September, 2004; originally announced September 2004.

Comments: PNAS, in press

Miniature Organic Transistors With Carbon Nanotubes as Quasi-One Dimensional Electrodes

Authors: Pengfei Qi, Ali Javey, Marco Rolandi, Qian Wang, Erhan Yenilmez, Hongjie Dai

Abstract: As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon nanotubes (SWNT) can be used as quasi one-dimensional (1D) electrodes to construct organic field effect transistors (FET) with molecular scale width (~2 nm) and c… ▽ More As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon nanotubes (SWNT) can be used as quasi one-dimensional (1D) electrodes to construct organic field effect transistors (FET) with molecular scale width (~2 nm) and channel length (1-3 nm). An important feature owing to the quasi 1D electrode geometry is the favorable gate electrostatics that allows for efficient switching of ultra-short organic channels. This affords room temperature conductance modulation by orders of magnitude for organic transistors that are only several-molecules in length, with switching characteristics superior to similar devices with lithographically patterned metal electrodes. With nanotubes, covalent carbon-carbon bonds could be utilized to form contacts to molecular materials. The unique geometrical, physical and chemical properties of carbon nanotube electrodes may lead to various interesting molecular devices. △ Less

Submitted 19 August, 2004; originally announced August 2004.

Comments: 3 pages, 3 figures. J. Am. Chem. Soc. in press

Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

Authors: Ali Javey, **g Guo, Damon B. Farmer, Qian Wang, Erhan Yenilmez, Roy G. Gordon, Mark Lundstrom, Hongjie Dai

Abstract: Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer depo… ▽ More Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained. △ Less

Submitted 21 June, 2004; originally announced June 2004.

Comments: Nano Letters, in press

Advancements in Complementary Carbon Nanotube Field-Effect Transistors

Authors: Ali Javey, Qian Wang, Woong Kim, Hongjie Dai

Abstract: High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to chemically intrinsic SWNTs, with no or small Schottky barriers (SB), afford high ON-state currents up to 20 uA per tube. The lack of significant Fermi-level pinn… ▽ More High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to chemically intrinsic SWNTs, with no or small Schottky barriers (SB), afford high ON-state currents up to 20 uA per tube. The lack of significant Fermi-level pinning at the nanotube-metal interfaces allows for fine-tuning of the barrier heights for p-and n-channel conductions by changing the contact metals. The air-stable p- and n-FETs thus obtained can be used for complementary nanoelectronics, as demonstrated with the fabrication of an inverter. Other important issues regarding nanotube FETs including hysteresis, OFF-state leak currents, choice of nanotube diameter, and threshold voltage control are discussed. △ Less

Submitted 12 January, 2004; originally announced January 2004.

Journal ref: IEDM Technical Digest, 741 (2003)

Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

Authors: Ali Javey, **g Guo, Damon B. Farmer, Qian Wang, Dunwei Wang, Roy G. Gordon, Mark Lundstrom, Hongjie Dai

Abstract: High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents, subthreshold swings of ~ 70-80 mV/decade, and allows fo… ▽ More High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents, subthreshold swings of ~ 70-80 mV/decade, and allows for low OFF currents and suppressed ambipolar conduction. The doped source and drain approach resembles that of MOSFETs and can impart excellent OFF states to nanotube FETs under aggressive vertical scaling. This presents an important advantage over devices with metal source/drain, or devices commonly referred to as Schottky barrier FETs. △ Less

Submitted 15 December, 2003; originally announced December 2003.

High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes

Authors: Ali Javey, **g Guo, Magnus Paulsson, Qian Wang, David Mann, Mark Lundstrom, Hongjie Dai

Abstract: Single walled carbon nanotubes with Pd ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean free path (mfp) for acoustic phonon scattering is estimated to be lap~300 nm, and that for optical phonon scattering is lop~15 nm. Transport through very short (~10 nm) nanotubes is free of significant acoustic and op… ▽ More Single walled carbon nanotubes with Pd ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean free path (mfp) for acoustic phonon scattering is estimated to be lap~300 nm, and that for optical phonon scattering is lop~15 nm. Transport through very short (~10 nm) nanotubes is free of significant acoustic and optical phonon scattering and thus ballistic and quasi-ballistic at the low and high bias voltage limits respectively. High currents of up to 70 uA can flow through a short nanotube. Possible mechanisms for the eventual electrical breakdown of short nanotubes at high fields are discussed. The results presented here have important implications to high performance nanotube transistors and interconnects. △ Less

Submitted 26 January, 2004; v1 submitted 10 September, 2003; originally announced September 2003.

Comments: 4 figures. PRL, in press

Journal ref: Physical Review Letters; 12 March 2004; vol.92, no.10, p.106804/1-4

Ballistic Transport in Metallic Nanotubes With Reliable Pd Ohmic Contacts

Authors: David Mann, Ali Javey, **g Kong, Qian Wang, Hongjie Dai

Abstract: Contacting metallic single-walled carbon nanotubes by palladium (Pd) affords highly reproducible ohmic contacts and allows for detailed elucidation of ballistic transport in metallic nanotubes. The Pd ohmic contacts are more reliable than titanium (Ti) previously used for ballistic nanotube devices. In contrast, Pt contacts appear to give non-ohmic contacts to metallic nanotubes. For both ohmic… ▽ More Contacting metallic single-walled carbon nanotubes by palladium (Pd) affords highly reproducible ohmic contacts and allows for detailed elucidation of ballistic transport in metallic nanotubes. The Pd ohmic contacts are more reliable than titanium (Ti) previously used for ballistic nanotube devices. In contrast, Pt contacts appear to give non-ohmic contacts to metallic nanotubes. For both ohmic and non-ohmic contacts, the length of the nanotube under the metal contact area is electrically turned off. Transport occurs from metal to nanotube at the edges of the contacts. Measurements with large numbers of Pd contacted nanotube samples reveal that the mean free path for defect scattering in SWNTs grown by chemical vapor deposition can be up to 4 microns. The mean free paths for acoustic phonon scattering are on the order of 500 nm at room temperature and >> 4 microns at low temperatures. △ Less

Submitted 26 September, 2003; v1 submitted 1 September, 2003; originally announced September 2003.

Comments: Nano Letters - In Press

Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain

Authors: **g Guo, Ali Javey, Hongjie Dai, Supriyo Datta, Mark Lundstrom

Abstract: Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such transistors display strong ambipolar conduction, even when the Schottky barrier for electrons (or for holes) is zero. The resulting leakage current, which increases exponentially with the drain voltage, constrains the… ▽ More Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such transistors display strong ambipolar conduction, even when the Schottky barrier for electrons (or for holes) is zero. The resulting leakage current, which increases exponentially with the drain voltage, constrains the potential applications of such devices. In this paper, we use numerical simulations to show that if CNT based metal-oxide-semiconductor (MOS) FETs can be achieved by using heavily doped CNT sections as source and drain, ambipolar conduction will be suppressed, leakage current will be reduced, and the scaling limit imposed by source-drain tunneling will be extended. By eliminating the Schottky barrier between the source and channel, the transistor will be capable of delivering more on-current. The leakage current of such devices will be controlled by the full bandgap of CNTs (instead of half of the bandgap for SB CNTFETs) and band-to-band tunneling. These factors will depend on the diameter of nanotubes and the power supply voltage. △ Less

Submitted 1 September, 2003; originally announced September 2003.

Comments: 5 figures