Showing 1–46 of 46 results for author: Jauregui, L

Refining microstructures in additively manufactured Al/Cu gradients through TiB$_2$ inclusions

Authors: Michael J. Abere, Hyein Choi, Levi Van Bastian, Luis Jauregui, Tomas F. Babuska, Mark. A Rodriguez, Frank W. DelRio, Shaun R. Whetten, Andrew B. Kustas

Abstract: The additive manufacture of compositionally graded Al/Cu parts by laser engineered net sha** (LENS) is demonstrated. The use of a blue light build laser enabled deposition on a Cu substrate. The thermal gradient and rapid solidification inherent to selective laser melting enabled mass transport of Cu up to 4 mm away from a Cu substrate through a pure Al deposition, providing a means of producing… ▽ More The additive manufacture of compositionally graded Al/Cu parts by laser engineered net sha** (LENS) is demonstrated. The use of a blue light build laser enabled deposition on a Cu substrate. The thermal gradient and rapid solidification inherent to selective laser melting enabled mass transport of Cu up to 4 mm away from a Cu substrate through a pure Al deposition, providing a means of producing gradients with finer step sizes than the printed layer thicknesses. Printing graded structures with pure Al, however, was prevented by the growth of Al$_2$Cu$_3$ dendrites and acicular grains amid a matrix of Al$_2$Cu. A combination of adding TiB$_2$ grain refining powder and actively varying print layer composition suppressed the dendritic growth mode and produced an equiaxed microstructure in a compositionally graded part. Material phase was characterized for crystal structure and nanoindentation hardness to enable a discussion of phase evolution in the rapidly solidifying melt pool of a LENS print. △ Less

Submitted 28 March, 2024; originally announced March 2024.

Comments: In review at JOM

Rydberg exciton states and near-infrared light-emitting diode in monolayer MoTe2 devices

Authors: Sebastian Yepez Rodriguez, Marshall A. Campbell, **yu Liu, Luis A. Jauregui

Abstract: Excitons, or bound electron-hole pairs, play a crucial role in the optical response of monolayer, 2H-phase transition-metal dichalcogenides (TMDs). They hold significant promise for the development of novel quantum opto-electronic devices due to their large binding energies and strong spin-orbit coupling. Among the monolayer TMDs, MoTe2 stands out because of its bandgap in the near-infrared (NIR)… ▽ More Excitons, or bound electron-hole pairs, play a crucial role in the optical response of monolayer, 2H-phase transition-metal dichalcogenides (TMDs). They hold significant promise for the development of novel quantum opto-electronic devices due to their large binding energies and strong spin-orbit coupling. Among the monolayer TMDs, MoTe2 stands out because of its bandgap in the near-infrared (NIR) regime. Here, we report the experimental observation of NIR Rydberg excitons and conduction band-split charged excitons, in high-quality, boron nitride (BN)-encapsulated monolayer MoTe2 devices, probed by photoluminescence and electroluminescence spectroscopy. By employing a graphite bottom gate, we successfully modulate the emission intensity of various excitonic species. Additionally, our device fabrication process within an argon-filled glove box ensures clean TMD/metal electrode interfaces, enabling the construction of p-n junctions near the electrodes. Our work significantly advances our understanding of excitons in monolayer TMDs and contributes to the application of MoTe2 in NIR quantum opto-electronic devices. △ Less

Submitted 28 March, 2024; originally announced March 2024.

Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures

Authors: Andrew Y. Joe, Andrés M. Mier Valdivia, Luis A. Jauregui, Kateryna Pistunova, Dapeng Ding, You Zhou, Giovanni Scuri, Kristiaan De Greve, Andrey Sushko, Bumho Kim, Takashi Taniguchi, Kenji Watanabe, James C. Hone, Mikhail D. Lukin, Hongkun Park, Philip Kim

Abstract: Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrost… ▽ More Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above $2\times10^{12}$ cm$^{-2}$ can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices. △ Less

Submitted 11 June, 2024; v1 submitted 21 November, 2023; originally announced November 2023.

Comments: 14 pages, 4 main figures, 1 extended data figure

Transport Study of Charge Carrier Scattering in Monolayer WSe$_2$

Authors: Andrew Y. Joe, Kateryna Pistunova, Kristen Kaasbjerg, Ke Wang, Bumho Kim, Daniel A. Rhodes, Takashi Taniguchi, Kenji Watanabe, James Hone, Tony Low, Luis A. Jauregui, Philip Kim

Abstract: Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility $μ$ as a function of hole density in the degenerately doped sample. This unusual behavior can b… ▽ More Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility $μ$ as a function of hole density in the degenerately doped sample. This unusual behavior can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path ($>$500 nm), we demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically-defined quantum point contact. Our results show the potential for creating ultra-high quality quantum optoelectronic devices based on atomically thin semiconductors. △ Less

Submitted 10 October, 2023; v1 submitted 6 October, 2023; originally announced October 2023.

Comments: 6 pages, 4 figures

Controllable Strain-driven Topological Phase Transition and Dominant Surface State Transport in High-Quality HfTe5 Samples

Authors: **yu Liu, Yinong Zhou, Sebastian Yepez Rodriguez, Matthew A. Delmont, Robert A. Welser, Nicholas Sirica, Kaleb McClure, Paolo Vilmercati, Joseph W. Ziller, Norman Mannella, Javier D. Sanchez-Yamagishi, Michael T. Pettes, Ruqian Wu, Luis A. Jauregui

Abstract: Controlling materials to create and tune topological phases of matter could potentially be used to explore new phases of topological quantum matter and to create novel devices where the carriers are topologically protected. It has been demonstrated that a trivial insulator can be converted into a topological state by modulating the spin-orbit interaction or the crystal lattice. However, there are… ▽ More Controlling materials to create and tune topological phases of matter could potentially be used to explore new phases of topological quantum matter and to create novel devices where the carriers are topologically protected. It has been demonstrated that a trivial insulator can be converted into a topological state by modulating the spin-orbit interaction or the crystal lattice. However, there are limited methods to controllably and efficiently tune the crystal lattice and at the same time perform electronic measurements at cryogenic temperatures. Here, we use large controllable strain to demonstrate the topological phase transition from a weak topological insulator phase to a strong topological insulator phase in high-quality HfTe5 samples. After applying high strain to HfTe5 and converting it into a strong topological insulator, we found that the sample's resistivity increased by more than two orders of magnitude (24,000%) and that the electronic transport is dominated by the topological surface states at cryogenic temperatures. Our findings show that HfTe5 is an ideal material for engineering topological properties, and it could be generalized to study topological phase transitions in van der Waals materials and heterostructures. These results can pave the way to create novel devices with applications ranging from spintronics to fault-tolerant topologically protected quantum computers. △ Less

Submitted 18 April, 2023; originally announced April 2023.

Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

Authors: Laisi Chen, Amy X. Wu, Naol Tulu, Joshua Wang, Adrian Juanson, Kenji Watanabe, Takashi Taniguchi, Michael T. Pettes, Marshall Campbell, Chaitanya A. Gadre, Yinong Zhou, Hangman Chen, Penghui Cao, Luis A. Jauregui, Ruqian Wu, Xiaoqing Pan, Javier D. Sanchez-Yamagishi

Abstract: Confining materials to two-dimensional forms changes the behavior of electrons and enables new devices. However, most materials are challenging to produce as uniform thin crystals. Here, we present a new synthesis approach where crystals are grown in a nanoscale mold defined by atomically-flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mold made of hexagonal boron n… ▽ More Confining materials to two-dimensional forms changes the behavior of electrons and enables new devices. However, most materials are challenging to produce as uniform thin crystals. Here, we present a new synthesis approach where crystals are grown in a nanoscale mold defined by atomically-flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mold made of hexagonal boron nitride (hBN), we grow ultraflat bismuth crystals less than 10 nanometers thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies. The vdW-molded bismuth shows exceptional electronic transport, enabling the observation of Shubnikov-de Haas quantum oscillations originating from the (111) surface state Landau levels, which have eluded previous studies. By measuring the gate-dependent magnetoresistance, we observe multi-carrier quantum oscillations and Landau level splitting, with features originating from both the top and bottom surfaces. Our vdW-mold growth technique establishes a platform for electronic studies and control of bismuth's Rashba surface states and topological boundary modes. Beyond bismuth, the vdW-molding approach provides a low-cost way to synthesize ultrathin crystals and directly integrate them into a vdW heterostructure. △ Less

Submitted 9 October, 2023; v1 submitted 14 November, 2022; originally announced November 2022.

Semicontinuity of capacity under pointed intrinsic flat convergence

Authors: Jeffrey L. Jauregui, Raquel Perales, Jacobus W. Portegies

Abstract: The concept of the capacity of a compact set in $\mathbb R^n$ generalizes readily to noncompact Riemannian manifolds and, with more substantial work, to metric spaces (where multiple natural definitions of capacity are possible). Motivated by analytic and geometric considerations, and in particular Jauregui's definition of capacity-volume mass and Jauregui and Lee's results on the lower semicontin… ▽ More The concept of the capacity of a compact set in $\mathbb R^n$ generalizes readily to noncompact Riemannian manifolds and, with more substantial work, to metric spaces (where multiple natural definitions of capacity are possible). Motivated by analytic and geometric considerations, and in particular Jauregui's definition of capacity-volume mass and Jauregui and Lee's results on the lower semicontinuity of the ADM mass and Huisken's isoperimetric mass, we investigate how the capacity functional behaves when the background spaces vary. Specifically, we allow the background spaces to consist of a sequence of local integral current spaces converging in the pointed Sormani--Wenger intrinsic flat sense. For the case of volume-preserving ($\mathcal{VF}$) convergence, we prove two theorems that demonstrate an upper semicontinuity phenomenon for the capacity: one version is for balls of a fixed radius centered about converging points; the other is for Lipschitz sublevel sets. Our approach is motivated by Portegies' investigation of the semicontinuity of eigenvalues under $\mathcal{VF}$ convergence. We include examples to show the semicontinuity may be strict, and that the volume-preserving hypothesis is necessary. Finally, there is a discussion on how capacity and our results may be used towards understanding the general relativistic total mass in non-smooth settings. △ Less

Submitted 20 April, 2022; originally announced April 2022.

Electrically controlled emission from singlet and triplet exciton species in atomically thin light emitting diodes

Authors: Andrew Y. Joe, Luis A. Jauregui, Kateryna Pistunova, Andrés M. Mier Valdivia, Zhengguang Lu, Dominik S. Wild, Giovanni Scuri, Kristiaan De Greve, Ryan J. Gelly, You Zhou, Jiho Sung, Andrey Sushko, Takashi Taniguchi, Kenji Watanabe, Dmitry Smirnov, Mikhail D. Lukin, Hongkun Park, Philip Kim

Abstract: Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Transition metal dichalcogenides (TMDs), with their large spin-orbit coupling, have been of special interest for valleytronic applications for their coupling of circularly polarized light to… ▽ More Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Transition metal dichalcogenides (TMDs), with their large spin-orbit coupling, have been of special interest for valleytronic applications for their coupling of circularly polarized light to excitons with selective valley and spin$^{1-4}$. In atomically thin MoSe$_2$/WSe$_2$ TMD van der Waals (vdW) heterostructures, the unique atomic registry of vdW layers provides a quasi-angular momentum to interlayer excitons$^{5,6}$, enabling emission from otherwise dark spin triplet excitons. Here, we report electrically tunable spin singlet and triplet exciton emission from atomically aligned TMD heterostructures. We confirm the spin configurations of the light-emitting excitons employing magnetic fields to measure effective exciton g-factors. The interlayer tunneling current across the TMD vdW heterostructure enables the electrical generation of singlet and triplet exciton emission in this atomically thin PN junction. We demonstrate electrically tunability between the singlet and triplet excitons that are generated by charge injection. Atomically thin TMD heterostructure light emitting diodes thus enables a route for optoelectronic devices that can configure spin and valley quantum states independently by controlling the atomic stacking registry. △ Less

Submitted 7 December, 2020; originally announced December 2020.

Comments: Extended work of previous study: arXiv:1912.07678

Journal ref: Phys. Rev. B 103, 161411 (2021)

Scalar curvature and the relative capacity of geodesic balls

Authors: Jeffrey L. Jauregui

Abstract: In a Riemannian manifold, it is well known that the scalar curvature at a point can be recovered from the volumes (areas) of small geodesic balls (spheres). We show the scalar curvature is likewise determined by the relative capacities of concentric small geodesic balls. This result has motivation from general relativity (as a complement to a previous study by the author of the capacity of large b… ▽ More In a Riemannian manifold, it is well known that the scalar curvature at a point can be recovered from the volumes (areas) of small geodesic balls (spheres). We show the scalar curvature is likewise determined by the relative capacities of concentric small geodesic balls. This result has motivation from general relativity (as a complement to a previous study by the author of the capacity of large balls in an asymptotically flat manifold) and from weak definitions of nonnegative scalar curvature. It also motivates a conjecture (inspired by the famous volume conjecture of Gray and Vanhecke), regarding whether Euclidean-like behavior of the relative capacity on the small scale is sufficient to characterize a space as flat. △ Less

Submitted 25 September, 2020; originally announced September 2020.

Comments: 14 pages

Journal ref: Proc. Amer. Math. Soc., Vol 149, No. 11, (2021), pp. 4907--4921

ADM mass and the capacity-volume deficit at infinity

Authors: Jeffrey L. Jauregui

Abstract: Based on the isoperimetric inequality, G. Huisken proposed a definition of total mass in general relativity that is equivalent to the ADM mass for (smooth) asymptotically flat 3-manifolds of nonnegative scalar curvature, but that is well-defined in greater generality. In a similar vein, we use the isocapacitary inequality (bounding capacity from below in terms of volume) to suggest a new definitio… ▽ More Based on the isoperimetric inequality, G. Huisken proposed a definition of total mass in general relativity that is equivalent to the ADM mass for (smooth) asymptotically flat 3-manifolds of nonnegative scalar curvature, but that is well-defined in greater generality. In a similar vein, we use the isocapacitary inequality (bounding capacity from below in terms of volume) to suggest a new definition of total mass. We prove an inequality between it and the ADM mass, and prove the reverse inequality with harmonically flat asymptotics, or, with general asymptotics, for exhaustions by balls (as opposed to arbitrary compact sets). This approach to mass may have applications to problems involving low regularity metrics and convergence in general relativity, and may have some advantages relative to the isoperimetric mass. Some conjectures, analogs of known results for CMC surfaces and isoperimetric regions, are proposed. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Comments: 31 pages, comments welcome

MSC Class: 53C20 (Primary); 83C99; 58Z05 (Secondary)

Electrically controlled emission from triplet charged excitons in atomically thin heterostructures

Authors: Andrew Y. Joe, Luis A. Jauregui, Kateryna Pistunova, Zhengguang Lu, Dominik S. Wild, Giovanni Scuri, Kristiaan De Greve, Ryan J. Gelly, You Zhou, Jiho Sung, Andrés Mier Valdivia, Andrey Sushko, Takashi Taniguchi, Kenji Watanabe, Dmitry Smirnov, Mikhail D. Lukin, Hongkun Park, Philip Kim

Abstract: Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Large spin-orbit coupling in transition metal dichalcogenides (TMDs) couples circularly polarized light to excitons with selective valley and spin. Here, we demonstrate electrically controlle… ▽ More Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Large spin-orbit coupling in transition metal dichalcogenides (TMDs) couples circularly polarized light to excitons with selective valley and spin. Here, we demonstrate electrically controlled brightening of spin-triplet interlayer excitons in a MoSe$_2$/WSe$_2$ TMD van der Waals (vdW) heterostructure. The atomic registry of vdW layers in TMD heterostructures provides a quasi-angular momentum to interlayer excitons, enabling emission from otherwise dark spin-triplet excitons. Employing magnetic field, we show that photons emitted by triplet and singlet excitons in the same valley have opposite chirality. We also measure effective exciton g-factors, presenting direct and quantitative evidence of triplet interlayer excitons. We further demonstrate gate tuning of the relative photoluminescence intensity between singlet and triplet charged excitons. Electrically controlled emission between singlet and triplet excitons enables a route for optoelectronic devices that can configure excitonic chiral, spin, and valley quantum states. △ Less

Submitted 16 December, 2019; originally announced December 2019.

Polariton Nanophotonics using Phase Change Materials

Authors: Kundan Chaudhary, Michele Tamagnone, Xinghui Yin, Christina M. Spägele, Stefano L. Oscurato, Jiahan Li, Christoph Persch, Ruo** Li, Noah A. Rubin, Luis A. Jauregui, Kenji Watanabe, Takashi Taniguchi, Philip Kim, Matthias Wuttig, James H. Edgar, Antonio Ambrosio, Federico Capasso

Abstract: Polaritons formed by the coupling of light and material excitations such as plasmons, phonons, or excitons enable light-matter interactions at the nanoscale beyond what is currently possible with conventional optics. Recently, significant interest has been attracted by polaritons in van der Waals materials, which could lead to applications in sensing, integrated photonic circuits and detectors. Ho… ▽ More Polaritons formed by the coupling of light and material excitations such as plasmons, phonons, or excitons enable light-matter interactions at the nanoscale beyond what is currently possible with conventional optics. Recently, significant interest has been attracted by polaritons in van der Waals materials, which could lead to applications in sensing, integrated photonic circuits and detectors. However, novel techniques are required to control the propagation of polaritons at the nanoscale and to implement the first practical devices. Here we report the experimental realization of polariton refractive and meta-optics in the mid-infrared by exploiting the properties of low-loss phonon polaritons in isotopically pure hexagonal boron nitride (hBN), which allow it to interact with the surrounding dielectric environment comprising the low-loss phase change material, Ge$_3$Sb$_2$Te$_6$ (GST). We demonstrate waveguides which confine polaritons in a 1D geometry, and refractive optical elements such as lenses and prisms for phonon polaritons in hBN, which we characterize using scanning near field optical microscopy. Furthermore, we demonstrate metalenses, which allow for polariton wavefront engineering and sub-wavelength focusing. Our method, due to its sub-diffraction and planar nature, will enable the realization of programmable miniaturized integrated optoelectronic devices, and will lay the foundation for on-demand biosensors. △ Less

Submitted 9 May, 2019; v1 submitted 3 May, 2019; originally announced May 2019.

Comments: 15 pages, 4 figures, typos corrected in v2

Lower semicontinuity of ADM mass under intrinsic flat convergence

Authors: Jeffrey L. Jauregui, Dan A. Lee

Abstract: A natural question in mathematical general relativity is how the ADM mass behaves as a functional on the space of asymptotically flat 3-manifolds of nonnegative scalar curvature. In previous results, lower semicontinuity has been established by the first-named author for pointed $C^2$ convergence, and more generally by both authors for pointed $C^0$ convergence (all in the Cheeger--Gromov sense).… ▽ More A natural question in mathematical general relativity is how the ADM mass behaves as a functional on the space of asymptotically flat 3-manifolds of nonnegative scalar curvature. In previous results, lower semicontinuity has been established by the first-named author for pointed $C^2$ convergence, and more generally by both authors for pointed $C^0$ convergence (all in the Cheeger--Gromov sense). In this paper, we show this behavior persists for the much weaker notion of pointed Sormani--Wenger intrinsic flat ($\mathcal{F}$) volume convergence, under natural hypotheses. We consider smooth manifolds converging to asymptotically flat local integral current spaces (a new definition), using Huisken's isoperimetric mass as a replacement for the ADM mass. Along the way we prove results of independent interest about convergence of subregions of $\mathcal{F}$-converging sequences of integral current spaces. △ Less

Submitted 3 March, 2019; originally announced March 2019.

Comments: 42 pages, 3 figures

MSC Class: 53C20; 83C99; 58Z05

Journal ref: Calculus of Variations and Partial Differential Equations, Vol 60, No. 2 (2021)

Electrical control of interlayer exciton dynamics in atomically thin heterostructures

Authors: Luis A. Jauregui, Andrew Y. Joe, Kateryna Pistunova, Dominik S. Wild, Alexander A. High, You Zhou, Giovanni Scuri, Kristiaan De Greve, Andrey Sushko, Che-Hang Yu, Takashi Taniguchi, Kenji Watanabe, Daniel J. Needleman, Mikhail D. Lukin, Hongkun Park, Philip Kim

Abstract: Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal dichalcogenides (TMDs) enables the formation of excitons from electrons and holes in distinct layers, producing interlayer excitons with large binding energy and a lon… ▽ More Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal dichalcogenides (TMDs) enables the formation of excitons from electrons and holes in distinct layers, producing interlayer excitons with large binding energy and a long lifetime. Employing heterostructures of monolayer TMDs, we realize optical and electrical generation of long-lived neutral and charged interlayer excitons. We demonstrate the transport of neutral interlayer excitons across the whole sample that can be controlled by excitation power and gate electrodes. We also realize the drift motion of charged interlayer excitons using Ohmic-contacted devices. The electrical generation and control of excitons provides a new route for realizing quantum manipulation of bosonic composite particles with complete electrical tunability. △ Less

Submitted 20 December, 2018; originally announced December 2018.

Smoothing the Bartnik boundary conditions and other results on Bartnik's quasi-local mass

Authors: Jeffrey L. Jauregui

Abstract: Quite a number of distinct versions of Bartnik's definition of quasi-local mass appear in the literature, and it is not a priori clear that any of them produce the same value in general. In this paper we make progress on reconciling these definitions. The source of discrepancies is two-fold: the choice of boundary conditions (of which there are three variants) and the non-degeneracy or "no-horizon… ▽ More Quite a number of distinct versions of Bartnik's definition of quasi-local mass appear in the literature, and it is not a priori clear that any of them produce the same value in general. In this paper we make progress on reconciling these definitions. The source of discrepancies is two-fold: the choice of boundary conditions (of which there are three variants) and the non-degeneracy or "no-horizon" condition (at least six variants). To address the boundary conditions, we show that given a 3-dimensional region $Ω$ of nonnegative scalar curvature ($R \geq 0$) extended in a Lipschitz fashion across $\partial Ω$ to an asymptotically flat 3-manifold with $R \geq 0$ (also holding distributionally along $\partial Ω$), there exists a smoothing, arbitrarily small in $C^0$ norm, such that $R \geq 0$ and the geometry of $Ω$ are preserved, and the ADM mass changes only by a small amount. With this we are able to show that the three boundary conditions yield equivalent Bartnik masses for two reasonable non-degeneracy conditions. We also discuss subtleties pertaining to the various non-degeneracy conditions and produce a nontrivial inequality between a no-horizon version of the Bartnik mass and Bray's replacement of this with the outward-minimizing condition. △ Less

Submitted 8 October, 2019; v1 submitted 21 June, 2018; originally announced June 2018.

Comments: 25 pages, 3 figures

Journal ref: J. Geom. Phys., Vol. 136 (2019), pg. 228-243

Lower semicontinuity of the ADM mass in dimensions two through seven

Authors: Jeffrey L. Jauregui

Abstract: The semicontinuity phenomenon of the ADM mass under pointed (i.e., local) convergence of asymptotically flat metrics is of interest because of its connections to nonnegative scalar curvature, the positive mass theorem, and Bartnik's mass-minimization problem in general relativity. In this paper, we extend a previously known semicontinuity result in dimension three for $C^2$ pointed convergence to… ▽ More The semicontinuity phenomenon of the ADM mass under pointed (i.e., local) convergence of asymptotically flat metrics is of interest because of its connections to nonnegative scalar curvature, the positive mass theorem, and Bartnik's mass-minimization problem in general relativity. In this paper, we extend a previously known semicontinuity result in dimension three for $C^2$ pointed convergence to higher dimensions, up through seven, using recent work of S. McCormick and P. Miao (which itself builds on the Riemannian Penrose inequality of H. Bray and D. Lee). For a technical reason, we restrict to the case in which the limit space is asymptotically Schwarzschild. In a separate result, we show that semicontinuity holds under weighted, rather than pointed, $C^2$ convergence, in all dimensions $n \geq 3$, with a simpler proof independent of the positive mass theorem. Finally, we also address the two-dimensional case for pointed convergence, in which the asymptotic cone angle assumes the role of the ADM mass. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Comments: 23 pages. Comments welcome!

Journal ref: Pacific J. Math. 301 (2019) 441-466

Selective excitation and imaging of ultraslow phonon polaritons in thin hexagonal boron nitride crystals

Authors: Antonio Ambrosio, Michele Tamagnone, Kundan Chaudhary, Luis A. Jauregui, Philip Kim, William L. Wilson, Federico Capasso

Abstract: Polaritons in 2D and van der Waals (vdW) materials have been investigated in several recent works as an innovative platform for light-matter interaction, rich of new physical phenomena.Hexagonal Boron Nitride (h-BN), in particular, is an out of plane anisotropic material (while it is in-plane isotropic) with two very strong phonon polaritons bands where the permittivity becomes negative. In the fi… ▽ More Polaritons in 2D and van der Waals (vdW) materials have been investigated in several recent works as an innovative platform for light-matter interaction, rich of new physical phenomena.Hexagonal Boron Nitride (h-BN), in particular, is an out of plane anisotropic material (while it is in-plane isotropic) with two very strong phonon polaritons bands where the permittivity becomes negative. In the first restrahlen band (RS1, 780-830 cm-1) the relative out of plane permittivity is negative, while in the second restrahlen band (RS2, 1370-1610 cm-1) the relative in-plane permittivity is negative. Due to these optical properties, thin h-BN flakes support guided modes which have been observed experimentally both via far field and near field methods. In this work, we show how selectively excite the more confined modes in the RS1 and RS2 bands. The supported guided modes have phase and group velocities respectively tens and hundreds of times slower than the speed of light. We also show the possibility of full hyperspectral nano-imaging of modes in RS1 band by means of photo-induced force microscopy (PiFM). Moreover, a direct comparison of (PiFM) and scattering-type near-field microscopy (s-SNOM) is obtained by imaging the modes of the RS2 band with both techniques implemented on the same platform. The possibility of addressing ultraslow (ultraconfined) polaritonic modes of h-BN crystal flakes together with the possibility of optical nano-imaging in both the restrahlen bands have many innovative aspects that can lead to unprecedented schemes for strong light-matter interaction, slow and confined light. △ Less

Submitted 12 November, 2017; originally announced November 2017.

Gate-tunable supercurrent and multiple Andreev reflections in a superconductor-topological insulator nanoribbon-superconductor hybrid device

Authors: Luis A. Jauregui, Morteza Kayyalha, Aleksander Kazakov, Ireneusz Miotkowski, Leonid P. Rokhinson, Yong P. Chen

Abstract: We report on the observation of gate-tunable proximity-induced superconductivity and multiple Andreev reflections (MAR) in a bulk-insulating BiSbTeSe$_2$ topological insulator nanoribbon (TINR) Josephson junction (JJ) with superconducting Nb contacts. We observe a gate-tunable critical current ($I_C$) for gate voltages ($V_g$) above the charge neutrality point ($V_{CNP}$), with $I_C$ as large as 4… ▽ More We report on the observation of gate-tunable proximity-induced superconductivity and multiple Andreev reflections (MAR) in a bulk-insulating BiSbTeSe$_2$ topological insulator nanoribbon (TINR) Josephson junction (JJ) with superconducting Nb contacts. We observe a gate-tunable critical current ($I_C$) for gate voltages ($V_g$) above the charge neutrality point ($V_{CNP}$), with $I_C$ as large as 430 nA. We also observe MAR peaks in the differential conductance ($dI/dV$) versus DC voltage ($V_{dc}$) across the junction corresponding to sub-harmonic peaks (at $V_{dc} = V_n = 2Δ_{Nb}/en$, where $Δ_{Nb}$ is the superconducting gap of the Nb contacts and $n$ is the sub-harmonic order). The sub-harmonic order, $n$, exhibits a $V_g$-dependence and reaches $n = 13$ for $V_g = 40$ V, indicating the high transparency of the Nb contacts to TINR. Our observations pave the way toward exploring the possibilities of using TINR in topologically protected devices that may host exotic physics such as Majorana fermions. △ Less

Submitted 9 October, 2017; originally announced October 2017.

Guided Modes of Anisotropic van der Waals Materials Investigated by Near-Field Scanning Optical Microscopy

Authors: Daniel Wintz, Kundan Chaudhary, Ke Wang, Luis A. Jauregui, Antonio Ambrosio, Michele Tamagnone, Alexander Y. Zhu, Robert C. Devlin, Jesse D. Crossno, Kateryna Pistunova, Kenji Watanabe, Takashi Taniguchi, Philip Kim, Federico Capasso

Abstract: Guided modes in anisotropic two-dimensional van der Waals materials are experimentally investigated and their refractive indices in visible wavelengths are extracted. Our method involves near-field scanning optical microscopy of waveguide (transverse electric) and surface plasmon polariton (transverse magnetic) modes in h-BN/SiO2/Si and Ag/h-BN stacks, respectively. We determine the dispersion of… ▽ More Guided modes in anisotropic two-dimensional van der Waals materials are experimentally investigated and their refractive indices in visible wavelengths are extracted. Our method involves near-field scanning optical microscopy of waveguide (transverse electric) and surface plasmon polariton (transverse magnetic) modes in h-BN/SiO2/Si and Ag/h-BN stacks, respectively. We determine the dispersion of these modes and use this relationship to extract anisotropic refractive indices of h-BN flakes. In the wavelength interval 550-700 nm, the in-plane and out-of-plane refractive indices are in the range 1.98-2.12 and 1.45-2.12, respectively. Our approach of using near-field scanning optical microscopy allows for direct study of interaction between light and two-dimensional van der Waals materials and heterostructures. △ Less

Submitted 2 June, 2017; originally announced June 2017.

Atomically thin mirrors made of monolayer semiconductors

Authors: Giovanni Scuri, You Zhou, Alexander A. High, Dominik S. Wild, Chi Shu, Kristiaan De Greve, Luis A. Jauregui, Takashi Taniguchi, Kenji Watanabe, Philip Kim, Mikhail D. Lukin, Hongkun Park

Abstract: Transition metal dichalcogenide monolayers are promising candidates for exploring new electronic and optical phenomena and for realizing atomically thin optoelectronic devices. They host tightly bound electron-hole pairs (excitons) that can be efficiently excited by resonant light fields. Here, we demonstrate that a single monolayer of molybdenum diselenide (MoSe2) can dramatically modify light tr… ▽ More Transition metal dichalcogenide monolayers are promising candidates for exploring new electronic and optical phenomena and for realizing atomically thin optoelectronic devices. They host tightly bound electron-hole pairs (excitons) that can be efficiently excited by resonant light fields. Here, we demonstrate that a single monolayer of molybdenum diselenide (MoSe2) can dramatically modify light transmission near the excitonic resonance, acting as an electrically switchable mirror that reflects up to 85% of incident light at cryogenic temperatures. This high reflectance is a direct consequence of the excellent coherence properties of excitons in this atomically thin semiconductor, encapsulated by hexagonal boron nitride. Furthermore, we show that the MoSe2 monolayer exhibits power- and wavelength-dependent nonlinearities that stem from exciton-based lattice heating in the case of continuous-wave excitation and exciton-exciton interactions when fast, pulsed laser excitation is used. These observations open up new possibilities for studying quantum nonlinear optical phenomena and topological photonics, and for miniaturizing optical devices. △ Less

Submitted 19 May, 2017; originally announced May 2017.

Comments: 4 figures

Journal ref: Phys. Rev. Lett. 120, 037402 (2018)

Mechanical detection and imaging of hyperbolic phonon polaritons in hexagonal Boron Nitride

Authors: Antonio Ambrosio, Luis A. Jauregui, Siyan Dai, Kundan Chaudhary, Michele Tamagnone, Michael Fogler, Dimitri N. Basov, Federico Capasso, Philip Kim, William L. Wilson

Abstract: Mid-infrared nano-imaging and spectroscopy of two-dimensional (2D) materials have been limited so far to scattering-type Scanning Near-field Optical Microscopy (s-NSOM) experiments where light from the sample is scattered by a metallic-coated Atomic Force Microscope (AFM) tip interacting with the material at the nanoscale. These experiments have recently allowed imaging of plasmon polaritons in gr… ▽ More Mid-infrared nano-imaging and spectroscopy of two-dimensional (2D) materials have been limited so far to scattering-type Scanning Near-field Optical Microscopy (s-NSOM) experiments where light from the sample is scattered by a metallic-coated Atomic Force Microscope (AFM) tip interacting with the material at the nanoscale. These experiments have recently allowed imaging of plasmon polaritons in graphene as well as hyperbolic phonon polaritons (HP2) in hexagonal Boron Nitride (hBN). Here we show that the high mechanical sensitivity of an AFM cantilever can be exploited for imaging hyperbolic phonon polaritons in hBN. In our imaging process, the lattice vibrations of hBN micrometer-sized flakes are locally enhanced by the launched phonon polaritons. These enhanced vibrations are coupled to the AFM tip in contact to the sample surface and recorded during scanning. Imaging resolution better than λ/20 is showed, comparable to the best resolution in s-NSOM. Importantly, this detection mechanism is free from light background and it is in fact the first photon-less detection of phonon polaritons. △ Less

Submitted 30 March, 2017; originally announced April 2017.

Probing dark excitons in atomically thin semiconductors via near-field coupling to surface plasmon polaritons

Authors: You Zhou, Giovanni Scuri, Dominik S. Wild, Alexander A. High, Alan Dibos, Luis A. Jauregui, Chi Shu, Kristiaan de Greve, Kateryna Pistunova, Andrew Joe, Takashi Taniguchi, Kenji Watanabe, Philip Kim, Mikhail D. Lukin, Hongkun Park

Abstract: Transition metal dichalcogenide (TMD) monolayers are direct bandgap semiconductors that feature tightly bound excitons, strong spin-orbit coupling, and spin-valley degrees of freedom. Depending on the spin configuration of the electron-hole pairs, intra-valley excitons of TMD monolayers can be either optically bright or dark. Dark excitons involve nominally spin-forbidden optical transitions with… ▽ More Transition metal dichalcogenide (TMD) monolayers are direct bandgap semiconductors that feature tightly bound excitons, strong spin-orbit coupling, and spin-valley degrees of freedom. Depending on the spin configuration of the electron-hole pairs, intra-valley excitons of TMD monolayers can be either optically bright or dark. Dark excitons involve nominally spin-forbidden optical transitions with zero in-plane transition dipole moment, making their detection with conventional far-field optical techniques challenging. Here, we introduce a new method for probing the optical properties of two-dimensional (2D) materials via near-field coupling to surface plasmon polaritons (SPPs), which selectively enhances optical transitions with dipole moments normal to the 2D plane. We utilize this method to directly detect dark excitons in monolayer TMDs. When a WSe2 monolayer is placed on top of a single-crystal silver film, its emission into near-field-coupled SPPs displays new spectral features whose energies and dipole orientations are consistent with dark neutral and charged excitons. The SPP-based near-field spectroscopy significantly enhances experimental capabilities for probing and manipulating exciton dynamics of atomically thin materials. △ Less

Submitted 20 January, 2017; originally announced January 2017.

Comments: 4 figures

Journal ref: Nature Nanotechnology 2017

Embeddings, immersions and the Bartnik quasi-local mass conjectures

Authors: Michael T. Anderson, Jeffrey L. Jauregui

Abstract: Given a Riemannian 3-ball $(\bar B, g)$ of non-negative scalar curvature, Bartnik conjectured that $(\bar B, g)$ admits an asymptotically flat (AF) extension (without horizons) of the least possible ADM mass, and that such a mass-minimizer is an AF solution to the static vacuum Einstein equations, uniquely determined by natural geometric conditions on the boundary data of $(\bar B, g)$. We prove… ▽ More Given a Riemannian 3-ball $(\bar B, g)$ of non-negative scalar curvature, Bartnik conjectured that $(\bar B, g)$ admits an asymptotically flat (AF) extension (without horizons) of the least possible ADM mass, and that such a mass-minimizer is an AF solution to the static vacuum Einstein equations, uniquely determined by natural geometric conditions on the boundary data of $(\bar B, g)$. We prove the validity of the second statement, i.e.~such mass-minimizers, if they exist, are indeed AF solutions of the static vacuum equations. On the other hand, we prove that the first statement is not true in general; there is a rather large class of bodies $(\bar B, g)$ for which a minimal mass extension does not exist. △ Less

Submitted 27 February, 2019; v1 submitted 26 November, 2016; originally announced November 2016.

Comments: 38 pages, 4 figures

Journal ref: Ann. Henri Poincaré, Vol. 20, No. 5 (2019), pg. 1651--1698

Lower semicontinuity of mass under $C^0$ convergence and Huisken's isoperimetric mass

Authors: Jeffrey L. Jauregui, Dan A. Lee

Abstract: Given a sequence of asymptotically flat 3-manifolds of nonnegative scalar curvature with outermost minimal boundary, converging in the pointed $C^0$ Cheeger--Gromov sense to an asymptotically flat limit space, we show that the total mass of the limit is bounded above by the liminf of the total masses of the sequence. In other words, total mass is lower semicontinuous under such convergence. In ord… ▽ More Given a sequence of asymptotically flat 3-manifolds of nonnegative scalar curvature with outermost minimal boundary, converging in the pointed $C^0$ Cheeger--Gromov sense to an asymptotically flat limit space, we show that the total mass of the limit is bounded above by the liminf of the total masses of the sequence. In other words, total mass is lower semicontinuous under such convergence. In order to prove this, we use Huisken's isoperimetric mass concept, together with a modified weak mean curvature flow argument. We include a brief discussion of Huisken's work before explaining our extension of that work. The results are all specific to three dimensions. △ Less

Submitted 1 February, 2016; originally announced February 2016.

Comments: 30 pages, 5 figures

MSC Class: 53C20 (Primary); 83C99; 58Z05 (Secondary)

Journal ref: Journal fuer die reine und angewandte Mathematik (Crelle's Journal), Vol. 2019, No. 756, pg. 227-257

In-surface confinement of topological insulator nanowire surface states

Authors: Fan W. Chen, Luis A. Jauregui, Yaohua Tan, Michael Manfra, Gerhard Klimeck, Yong P. Chen, Tillmann Kubis

Abstract: The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potentia… ▽ More The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects. △ Less

Submitted 5 May, 2016; v1 submitted 14 May, 2015; originally announced May 2015.

Comments: 2015 Applied Physics Letters

Magnetic field induced helical mode and topological transitions in a quasi-ballistic topological insulator nanoribbon with circumferentially quantized surface state sub-bands

Authors: Luis A. Jauregui, Michael T. Pettes, Leonid P. Rokhinson, Li Shi, Yong P. Chen

Abstract: A topological insulator (TI) nanowire (NW), where the core is insulating and the 2D spin-helical Dirac fermion topological surface states (TSS) are circumferentially quantized into a series of 1D sub-bands, promises novel topological physics and applications. An axial magnetic flux (Φ) through the core drives periodic topological transitions in the surface sub-bands, changing from being all doubly… ▽ More A topological insulator (TI) nanowire (NW), where the core is insulating and the 2D spin-helical Dirac fermion topological surface states (TSS) are circumferentially quantized into a series of 1D sub-bands, promises novel topological physics and applications. An axial magnetic flux (Φ) through the core drives periodic topological transitions in the surface sub-bands, changing from being all doubly-degenerate with a gapped Dirac point (DP) at integer (including zero) flux quanta (Φ$_0$ = h/e, with h being the Planck constant and e the electron charge), to contain a topologically-protected, non-degenerate 1D spin helical mode with restored DP at half-integer flux quanta. The resulting magnetoconductance is predicted to exhibit Aharonov-Bohm oscillations (ABO) with maxima occurring alternatively at half-integer or integer flux quanta (referred to as π-ABO or 0-ABO), depending periodically on the Fermi wavevector (k$_F$, with period 2π/C, C being the NW circumference). Here, we report a clear observation of such k$_F$-periodic alternations between 0-ABO and π-ABO in Bi$_2$Te$_3$ TI nanoribbon (NR, a rectangular cross sectional NW) field effect devices, which exhibit quasi-ballistic transport over ~2 μm (as manifested in length-independent conductance, exponential decaying ABO amplitude with increasing temperature (T), and an 1/T dependence of the extracted phase coherence length). The conductances as functions of the gate voltage at half and zero flux quanta also exhibit clear, but anti-correlated oscillations periodic in k$_F$ (with period 2π/C, equivalently when C encloses an integer multiples of Fermi wavelength 2π/k$_F$), consistent with the circumferentially quantized surface sub-bands. We also extract the minimal Fermi energy and momentum for TSS to emerge out of the bulk valence band, in agreement with the known Bi$_2$Te$_3$ bandstructure. △ Less

Submitted 2 March, 2015; originally announced March 2015.

Journal ref: Nature Nanotechnology 11, 345 (2016)

On the lower semicontinuity of the ADM mass

Authors: Jeffrey L. Jauregui

Abstract: The ADM mass, viewed as a functional on the space of asymptotically flat Riemannian metrics of nonnegative scalar curvature, fails to be continuous for many natural topologies. In this paper we prove that lower semicontinuity holds in natural settings: first, for pointed Cheeger--Gromov convergence (without any symmetry assumptions) for $n=3$, and second, assuming rotational symmetry, for weak con… ▽ More The ADM mass, viewed as a functional on the space of asymptotically flat Riemannian metrics of nonnegative scalar curvature, fails to be continuous for many natural topologies. In this paper we prove that lower semicontinuity holds in natural settings: first, for pointed Cheeger--Gromov convergence (without any symmetry assumptions) for $n=3$, and second, assuming rotational symmetry, for weak convergence of the associated canonical embeddings into Euclidean space, for $n \geq 3$. We also apply recent results of LeFloch and Sormani to deal with the rotationally symmetric case, with respect to a pointed type of intrinsic flat convergence. We provide several examples, one of which demonstrates that the positive mass theorem is implied by a statement of the lower semicontinuity of the ADM mass. △ Less

Submitted 13 November, 2014; originally announced November 2014.

Comments: 18 pages, 4 figures

MSC Class: 53C20 (Primary); 83C99; 58Z05 (Secondary)

Journal ref: Comm. Anal. Geom., Vol. 26, No. 1, 2018

Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable do**

Authors: Isaac Childres, Luis A. Jauregui, Yong P. Chen

Abstract: We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back gate voltages (Vg) for various irradiation dosages (Re). We study effects in the Raman spectra due to Vg-induced do** and artificially created disorder at vario… ▽ More We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back gate voltages (Vg) for various irradiation dosages (Re). We study effects in the Raman spectra due to Vg-induced do** and artificially created disorder at various Re. With moderate disorder (irradiation), the Raman G peak with respect to the graphene carrier density (nFE) exhibits a minimum in peak frequency and a maximum in peak width near the charge- neutral point (CNP). These trends are similar to those seen in previous works on pristine graphene and have been attributed to a reduction of electron-phonon coupling strength (D) and removal of the Kohn anomaly as the Fermi level moves away from the CNP. We also observe a maximum in I2D/IG and weak maximum in ID/IG near the CNP. All the observed dependences of Raman parameters on nFE weaken at stronger disorder (higher Re), implying that disorder causes a reduction of D as well. Our findings are valuable for understanding Raman spectra and electron-phonon physics in doped and disordered graphene. △ Less

Submitted 8 September, 2014; originally announced September 2014.

Comments: 16 pages, 5 figures

Electrical and thermal conductivities of reduced graphene oxide/polystyrene composites

Authors: Wonjun Park, Jiuning Hu, Luis A. Jauregui, Xiulin Ruan, Yong P. Chen

Abstract: The author reports an experimental study of electrical and thermal transport in reduced graphene oxide (RGO)/polystyrene (PS) composites. The electrical conductivity ($σ$) of RGO/PS composites with different RGO concentrations at room temperature shows a percolation behavior with the percolation threshold of ~ 0.25 vol.%. Their temperature-dependent electrical conductivity follows Efros-Shklovskii… ▽ More The author reports an experimental study of electrical and thermal transport in reduced graphene oxide (RGO)/polystyrene (PS) composites. The electrical conductivity ($σ$) of RGO/PS composites with different RGO concentrations at room temperature shows a percolation behavior with the percolation threshold of ~ 0.25 vol.%. Their temperature-dependent electrical conductivity follows Efros-Shklovskii (ES) variable range hop** (VRH) conduction in the temperature range of 30 to 300 K. The thermal conductivity ($κ$) of composites is enhanced by ~ 90 % as the concentration is increased from 0 to 10 vol.%. The thermal conductivity of composites approximately linearly increases with increasing temperature from 150 to 300 K. Composites with a higher concentration show a stronger temperature dependence in the thermal conductivity. △ Less

Submitted 24 February, 2017; v1 submitted 10 March, 2014; originally announced March 2014.

Journal ref: Appl. Phys. Lett. 104, 113101 (2014)

Time flat surfaces and the monotonicity of the spacetime Hawking mass II

Authors: Hubert L. Bray, Jeffrey L. Jauregui, Marc Mars

Abstract: In this sequel paper we give a shorter, second proof of the monotonicity of the Hawking mass for time flat surfaces under spacelike uniformly area expanding flows in spacetimes that satisfy the dominant energy condition. We also include a third proof which builds on a known formula and describe a class of sufficient conditions of divergence type for the monotonicity of the Hawking mass. These flow… ▽ More In this sequel paper we give a shorter, second proof of the monotonicity of the Hawking mass for time flat surfaces under spacelike uniformly area expanding flows in spacetimes that satisfy the dominant energy condition. We also include a third proof which builds on a known formula and describe a class of sufficient conditions of divergence type for the monotonicity of the Hawking mass. These flows of surfaces may have connections to the problem in general relativity of bounding the total mass of a spacetime from below by the quasi-local mass of spacelike 2-surfaces in the spacetime. △ Less

Submitted 13 February, 2014; originally announced February 2014.

Comments: 19 pages, 1 figure

MSC Class: 53C20 (Primary); 83C99 (Secondary)

Journal ref: Annales Henri Poincaré, Vol. 17, No. 6 (2016), pp. 1457-1475

Gate Tunable Relativistic Mass and Berry$'$s phase in Topological Insulator Nanoribbon Field Effect Devices

Authors: Luis A. Jauregui, Michael T. Pettes, Leonid P. Rokhinson, Li Shi, Yong P. Chen

Abstract: Transport due to spin-helical massless Dirac fermion surface state is of paramount importance to realize various new physical phenomena in topological insulators, ranging from quantum anomalous Hall effect to Majorana fermions. However, one of the most important hallmarks of topological surface states, the Dirac linear band dispersion, has been difficult to reveal directly in transport measurement… ▽ More Transport due to spin-helical massless Dirac fermion surface state is of paramount importance to realize various new physical phenomena in topological insulators, ranging from quantum anomalous Hall effect to Majorana fermions. However, one of the most important hallmarks of topological surface states, the Dirac linear band dispersion, has been difficult to reveal directly in transport measurements. Here we report experiments on Bi2Te3 nanoribbon ambipolar field effect devices on high-k SrTiO3 substrates, where we achieve a gate-tuned bulk metal-insulator transition and the topological transport regime with substantial surface state conduction. In this regime, we report two unambiguous transport evidences for gate-tunable Dirac fermions through π Berry$'$s phase in Shubnikov-de Haas oscillations and effective mass proportional to the Fermi momentum, indicating linear energy-momentum dispersion. We also measure a gate-tunable weak anti-localization (WAL) with 2 coherent conduction channels (indicating 2 decoupled surfaces) near the charge neutrality point, and a transition to weak localization (indicating a collapse of the Berry$'$s phase) when the Fermi energy approaches the bulk conduction band. The gate-tunable Dirac fermion topological surface states pave the way towards a variety of topological electronic devices. △ Less

Submitted 11 February, 2014; originally announced February 2014.

Comments: 22 pages, 5 figures

On curves with nonnegative torsion

Authors: Hubert L. Bray, Jeffrey L. Jauregui

Abstract: We provide new results and new proofs of results about the torsion of curves in $\mathbb{R}^3$. Let $γ$ be a smooth curve in $\mathbb{R}^3$ that is the graph over a simple closed curve in $\mathbb{R}^2$ with positive curvature. We give a new proof that if $γ$ has nonnegative (or nonpositive) torsion, then $γ$ has zero torsion and hence lies in a plane. Additionally, we prove the new result that a… ▽ More We provide new results and new proofs of results about the torsion of curves in $\mathbb{R}^3$. Let $γ$ be a smooth curve in $\mathbb{R}^3$ that is the graph over a simple closed curve in $\mathbb{R}^2$ with positive curvature. We give a new proof that if $γ$ has nonnegative (or nonpositive) torsion, then $γ$ has zero torsion and hence lies in a plane. Additionally, we prove the new result that a simple closed plane curve, without any assumption on its curvature, cannot be perturbed to a closed space curve of constant nonzero torsion. We also prove similar statements for curves in Lorentzian $\mathbb{R}^{2,1}$ which are related to important open questions about time flat surfaces in spacetimes and mass in general relativity. △ Less

Submitted 31 January, 2014; v1 submitted 18 December, 2013; originally announced December 2013.

Comments: 13 pages, 7 figures; references added in second version

MSC Class: 53A04

Journal ref: Arch. Math., Vol. 104, No. 6 (2015), pp. 561-575

Time flat surfaces and the monotonicity of the spacetime Hawking mass

Authors: Hubert L. Bray, Jeffrey L. Jauregui

Abstract: We identify a condition on spacelike 2-surfaces in a spacetime that is relevant to understanding the concept of mass in general relativity. We prove a formula for the variation of the spacetime Hawking mass under a uniformly area expanding flow and show that it is nonnegative for these so-called "time flat surfaces." Such flows generalize inverse mean curvature flow, which was used by Huisken and… ▽ More We identify a condition on spacelike 2-surfaces in a spacetime that is relevant to understanding the concept of mass in general relativity. We prove a formula for the variation of the spacetime Hawking mass under a uniformly area expanding flow and show that it is nonnegative for these so-called "time flat surfaces." Such flows generalize inverse mean curvature flow, which was used by Huisken and Ilmanen to prove the Riemannian Penrose inequality for one black hole. A flow of time flat surfaces may have connections to the problem in general relativity of bounding the mass of a spacetime from below by the quasi-local mass of a spacelike 2-surface contained therein. △ Less

Submitted 18 December, 2013; v1 submitted 31 October, 2013; originally announced October 2013.

Comments: 23 pages; sign error fixed from previous version, statement of Theorem 1.1 changed accordingly

MSC Class: 53C20 (Primary); 83C99 (Secondary)

Journal ref: Comm. Math. Phys., Vol. 335, No. 1 (2015), pp. 285-307

Observation of Low Energy Raman Modes in Twisted Bilayer Graphene

Authors: Rui He, Ting-Fung Chung, Conor Delaney, Courtney Keiser, Luis A. Jauregui, Paul M. Shand, C. C. Chancey, Yanan Wang, Jiming Bao, Yong P. Chen

Abstract: Two new Raman modes below 100 cm^-1 are observed in twisted bilayer graphene grown by chemical vapor deposition. The two modes are observed in a small range of twisting angle at which the intensity of the G Raman peak is strongly enhanced, indicating that these low energy modes and the G Raman mode share the same resonance enhancement mechanism, as a function of twisting angle. The 94 cm^-1 mode (… ▽ More Two new Raman modes below 100 cm^-1 are observed in twisted bilayer graphene grown by chemical vapor deposition. The two modes are observed in a small range of twisting angle at which the intensity of the G Raman peak is strongly enhanced, indicating that these low energy modes and the G Raman mode share the same resonance enhancement mechanism, as a function of twisting angle. The 94 cm^-1 mode (measured with a 532 nm laser excitation) is assigned to the fundamental layer breathing vibration (ZO (prime) mode) mediated by the twisted bilayer graphene lattice, which lacks long-range translational symmetry. The dependence of this modes frequency and linewidth on the rotational angle can be explained by the double resonance Raman process which is different from the previously-identified Raman processes activated by twisted bilayer graphene superlattice. The dependence also reveals the strong impact of electronic-band overlaps of the two graphene layers. Another new mode at 52 cm^-1, not observed previously in the bilayer graphene system, is tentatively attributed to a torsion mode in which the bottom and top graphene layers rotate out-of-phase in the plane. △ Less

Submitted 31 July, 2013; v1 submitted 22 July, 2013; originally announced July 2013.

Comments: 12 pages, 5 figures, 14 supp. figures (accepted by Nano Lett)

Journal ref: Nano Lett. 13, 3594 (2013)

Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

Authors: Ting Fung Chung, Tian Shen, Helin Cao, Luis A. Jauregui, Wei Wu, Qingkai Yu, David Newell, Yong P. Chen

Abstract: The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interests. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapour deposition on copper has emerged… ▽ More The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interests. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapour deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this chapter, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapour deposition. We also discuss potential applications of such large scale synthetic graphene. △ Less

Submitted 22 July, 2013; originally announced July 2013.

Comments: 23 pages, 4 figures

Journal ref: Int. J. Mod. Phys. B 27, 1341002 (2013)

Penrose-type inequalities with a Euclidean background

Authors: Jeffrey L. Jauregui

Abstract: The Riemannian Penrose inequality (RPI) bounds from below the ADM mass of asymptotically flat manifolds of nonnegative scalar curvature in terms of the total area of all outermost compact minimal surfaces. The general form of the RPI is currently known for manifolds of dimension up to seven. In the present work, we prove a Penrose-like inequality that is valid in all dimensions, for conformally fl… ▽ More The Riemannian Penrose inequality (RPI) bounds from below the ADM mass of asymptotically flat manifolds of nonnegative scalar curvature in terms of the total area of all outermost compact minimal surfaces. The general form of the RPI is currently known for manifolds of dimension up to seven. In the present work, we prove a Penrose-like inequality that is valid in all dimensions, for conformally flat manifolds. Our inequality treats the area contributions of the minimal surfaces in a more favorable way than the RPI, at the expense of using the smaller Euclidean area (rather than the intrinsic area). We give an example in which our estimate is sharper than the RPI when many minimal surfaces are present. We do not require the minimal surfaces to be outermost. We also generalize the technique to allow for metrics conformal to a scalar-flat (not necessarily Euclidean) background, and prove a Penrose-type inequality without an assumption on the sign of scalar curvature. Finally, we derive a new lower bound for the ADM mass of a conformally flat, asymptotically flat manifold containing any number of zero area singularities. △ Less

Submitted 20 June, 2018; v1 submitted 19 August, 2011; originally announced August 2011.

Comments: 15 pages

MSC Class: 53C20 (Primary) 83C99 (Secondary)

Journal ref: Ann. Global Anal. Geom., Vol. 54, No. 4 (2018), pp. 509-527

Fill-ins of nonnegative scalar curvature, static metrics, and quasi-local mass

Authors: Jeffrey L. Jauregui

Abstract: Consider a triple of "Bartnik data" $(Σ, γ,H)$, where $Σ$ is a topological 2-sphere with Riemannian metric $γ$ and positive function $H$. We view Bartnik data as a boundary condition for the problem of finding a compact Riemannian 3-manifold $(Ω,g)$ of nonnegative scalar curvature whose boundary is isometric to $(Σ,γ)$ with mean curvature $H$. Considering the perturbed data $(Σ, γ, λH)$ for a posi… ▽ More Consider a triple of "Bartnik data" $(Σ, γ,H)$, where $Σ$ is a topological 2-sphere with Riemannian metric $γ$ and positive function $H$. We view Bartnik data as a boundary condition for the problem of finding a compact Riemannian 3-manifold $(Ω,g)$ of nonnegative scalar curvature whose boundary is isometric to $(Σ,γ)$ with mean curvature $H$. Considering the perturbed data $(Σ, γ, λH)$ for a positive real parameter $λ$, we find that such a "fill-in" $(Ω,g)$ must exist for $λ$ small and cannot exist for $λ$ large; moreover, we prove there exists an intermediate threshold value. The main application is the construction of a new quasi-local mass, a concept of interest in general relativity. This mass has the nonnegativity property, but differs from many other definitions in that it tends to vanish on static vacuum (as opposed to flat) regions. We also recognize this mass as a special case of a type of twisted product of quasi-local mass functionals. Several ideas in this paper draw on work of Bray, Brendle--Marques--Neves, Corvino, Miao, and Shi--Tam. △ Less

Submitted 27 March, 2013; v1 submitted 21 June, 2011; originally announced June 2011.

Comments: 21 pages, 3 figures

MSC Class: 53C20 (Primary) 83C99 (Secondary)

Journal ref: Pacific Journal of Mathematics, Vol. 261 (2013), No. 2, 417--44

Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

Authors: Qingkai Yu, Luis A. Jauregui, Wei Wu, Robert Colby, Jifa Tian, Zhihua Su, Helin Cao, Zhihong Liu, Deepak Pandey, Dongguang Wei, Ting Fung Chung, Peng Peng, Nathan Guisinger, Eric A. Stach, Jiming Bao, Shin-shem Pei, Yong P. Chen

Abstract: The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystallin… ▽ More The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene's electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman "D" peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries. △ Less

Submitted 21 March, 2011; v1 submitted 21 November, 2010; originally announced November 2010.

Comments: New version with additional data. Accepted by Nature Materials

Journal ref: Nature Materials 10, 443 (2011)

Effect of oxygen plasma etching on graphene studied with Raman spectroscopy and electronic transport

Authors: Isaac Childres, Luis A. Jauregui, Jifa Tian, Yong P. Chen

Abstract: We report a study of graphene and graphene field effect devices after exposure to a series of short pulses of oxygen plasma. We present data from Raman spectroscopy, back-gated field-effect and magneto-transport measurements. The intensity ratio between Raman "D" and "G" peaks, I(D)/I(G) (commonly used to characterize disorder in graphene) is observed to increase approximately linearly with the nu… ▽ More We report a study of graphene and graphene field effect devices after exposure to a series of short pulses of oxygen plasma. We present data from Raman spectroscopy, back-gated field-effect and magneto-transport measurements. The intensity ratio between Raman "D" and "G" peaks, I(D)/I(G) (commonly used to characterize disorder in graphene) is observed to increase approximately linearly with the number (N(e)) of plasma etching pulses initially, but then decreases at higher Ne. We also discuss implications of our data for extracting graphene crystalline domain sizes from I(D)/I(G). At the highest Ne measured, the "2D" peak is found to be nearly suppressed while the "D" peak is still prominent. Electronic transport measurements in plasma-etched graphene show an up-shifting of the Dirac point, indicating hole do**. We also characterize mobility, quantum Hall states, weak localization and various scattering lengths in a moderately etched sample. Our findings are valuable for understanding the effects of plasma etching on graphene and the physics of disordered graphene through artificially generated defects. △ Less

Submitted 1 November, 2010; originally announced November 2010.

Comments: 10 pages, 5 figures

Journal ref: Isaac Childres et al 2011 New J. Phys. 13 025008

Invariants of the harmonic conformal class of an asymptotically flat manifold

Authors: Jeffrey L. Jauregui

Abstract: Consider an asymptotically flat Riemannian manifold $(M,g)$ of dimension $n \geq 3$ with nonempty compact boundary. We recall the harmonic conformal class $[g]_h$ of the metric, which consists of all conformal rescalings given by a harmonic function raised to an appropriate power. The geometric significance is that every metric in $[g]_h$ has the same pointwise sign of scalar curvature. For this r… ▽ More Consider an asymptotically flat Riemannian manifold $(M,g)$ of dimension $n \geq 3$ with nonempty compact boundary. We recall the harmonic conformal class $[g]_h$ of the metric, which consists of all conformal rescalings given by a harmonic function raised to an appropriate power. The geometric significance is that every metric in $[g]_h$ has the same pointwise sign of scalar curvature. For this reason, the harmonic conformal class appears in the study of general relativity, where scalar curvature is related to energy density. Our purpose is to introduce and study invariants of the harmonic conformal class. These invariants are closely related to constrained geometric optimization problems involving hypersurface area-minimizers and the ADM mass. In the final section, we discuss possible applications of the invariants and their relationship with zero area singularities and the positive mass theorem. △ Less

Submitted 20 October, 2010; originally announced October 2010.

Comments: 26 pages, 2 figures

MSC Class: 53C20 (Primary) 83C99 (Secondary)

Journal ref: Comm. Anal. Geom., Volume 20, Number 1 (January 2012), p. 163-202

Effect of electron-beam irradiation on graphene field effect devices

Authors: Isaac Childres, Luis A. Jauregui, Mike Foxe, Jifa Tian, Romaneh Jalilian, Igor Jovanovic, Yong P. Chen

Abstract: Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene and the operation of graphene field-effect transistors (GFET). Exposure to a 30 keV electron-beam caused negative shifts in the charge-neutral point (CNP) of the GFET, interpreted as… ▽ More Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene and the operation of graphene field-effect transistors (GFET). Exposure to a 30 keV electron-beam caused negative shifts in the charge-neutral point (CNP) of the GFET, interpreted as due to n-do** in the graphene from the interaction of the energetic electron beam with the substrate. The shift of the CNP is substantially reduced for suspended graphene devices. The electron beam is seen to also decrease the carrier mobilities and minimum conductivity, indicating defects created in the graphene. The findings are valuable for understanding the effects of radiation damage on graphene and for the development of radiation-hard graphene-based electronics. △ Less

Submitted 26 August, 2010; originally announced August 2010.

Comments: 8 pages, 3 figures

Journal ref: Appl. Phys. Lett. 97, 173109 (2010)

Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates

Authors: Jifa Tian, Luis A. Jauregui, Gabriel Lopez, Helin Cao, Yong P. Chen

Abstract: We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range by the back gate and/or a second side gate. We also find that the side gated field effect is significantly stronger by electrically floating the back gate compa… ▽ More We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range by the back gate and/or a second side gate. We also find that the side gated field effect is significantly stronger by electrically floating the back gate compared to grounding the back gate, consistent with the finding from electrostatic simulation. △ Less

Submitted 6 August, 2010; v1 submitted 30 March, 2010; originally announced March 2010.

Comments: 4 pages, 3 figures

Journal ref: APPLIED PHYSICS LETTERS 96, 263110 (2010)

Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Do**

Authors: Romaneh Jalilian, Luis A. Jauregui, Gabriel Lopez, Jifa Tian, Caleb Roecker, Mehdi M. Yazdanpanah, Robert W. Cohn, Igor Jovanovic, Yong P. Chen

Abstract: We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the dependence of graphene resistance on tip volta… ▽ More We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the dependence of graphene resistance on tip voltage shows a significant variation with tip position. SGM imaging reveals mesoscopic domains of electron-doped and hole-doped regions. Our measurements indicate a substantial spatial fluctuation (on the order of 10^12/cm^2) in the carrier density in graphene due to extrinsic local do**. Important sources for such do** found in our samples include metal contacts, edges of graphene, structural defects, and resist residues. △ Less

Submitted 28 March, 2010; originally announced March 2010.

Journal ref: Nanotechnology 22, 295705 (2011)

Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

Authors: Helin Cao, Qingkai Yu, Luis A. Jauregui, Jifa Tian, Wei Wu, Zhihong Liu, Romaneh Jalilian, Daniel K. Benjamin, Zhigang Jiang, Jiming Bao, Steven S. S. Pei, Yong P. Chen

Abstract: We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman map**. Low temperature transport measurements are performed on micro devices fabricated from such CVD graphene, disp… ▽ More We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman map**. Low temperature transport measurements are performed on micro devices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio ~5 and carrier mobilities up to ~3000 cm^2/Vs) and "half-integer" quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphene. We also observe weak localization and extract information about phase coherence and scattering of carriers. △ Less

Submitted 25 March, 2010; v1 submitted 22 October, 2009; originally announced October 2009.

Comments: shortened version, published on APL. See version 1 for more Raman data.

Report number: Suppplemental material at http://ftp.aip.org/epaps/appl_phys_lett/E-APPLAB-96-071012/Cugraphene_apl_supp.doc

Journal ref: Applied Physics Letters 96, 122106 (2010)

Virial relations for ultracold trapped Fermi gases with finite range interactions through the BCS-BEC crossover

Authors: L. E. C. Rosales-Zarate R. Jauregui

Abstract: We study the virial relations for ultracold trapped two component Fermi gases in the case of short finite range interactions. Numerical verifications for such relations are reported through the BCS-BEC crossover. As an intermediate step, it is necessary to evaluate the partial derivatives of the many body energy with respect to the inverse of the scattering length and with respect to the interac… ▽ More We study the virial relations for ultracold trapped two component Fermi gases in the case of short finite range interactions. Numerical verifications for such relations are reported through the BCS-BEC crossover. As an intermediate step, it is necessary to evaluate the partial derivatives of the many body energy with respect to the inverse of the scattering length and with respect to the interaction range. They are found to have extreme values at the unitary limit. The virial results are used to check the quality of the variational wave function involved in the calculations. △ Less

Submitted 3 September, 2009; originally announced September 2009.

Comments: 6 pages, 5 figures

A geometric theory of zero area singularities in general relativity

Authors: Hubert L. Bray, Jeffrey L. Jauregui

Abstract: The Schwarzschild spacetime metric of negative mass is well-known to contain a naked singularity. In a spacelike slice, this singularity of the metric is characterized by the property that nearby surfaces have arbitrarily small area. We develop a theory of such "zero area singularities" in Riemannian manifolds, generalizing far beyond the Schwarzschild case (for example, allowing the singularities… ▽ More The Schwarzschild spacetime metric of negative mass is well-known to contain a naked singularity. In a spacelike slice, this singularity of the metric is characterized by the property that nearby surfaces have arbitrarily small area. We develop a theory of such "zero area singularities" in Riemannian manifolds, generalizing far beyond the Schwarzschild case (for example, allowing the singularities to have nontrivial topology). We also define the mass of such singularities. The main result of this paper is a lower bound on the ADM mass of an asymptotically flat manifold of nonnegative scalar curvature in terms of the masses of its singularities, assuming a certain conjecture in conformal geometry. The proof relies on the Riemannian Penrose Inequality. Equality is attained in the inequality by the Schwarzschild metric of negative mass. An immediate corollary is a version of the Positive Mass Theorem that allows for certain types of incomplete metrics. △ Less

Submitted 3 July, 2012; v1 submitted 2 September, 2009; originally announced September 2009.

Comments: 36 pages, 9 figures

MSC Class: 53C20; 53C80; 83C99

Journal ref: Asian J. Math., Vol. 17, No. 3 (2013), pp. 525-560