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Temperature and excitation energy dependence of Raman scattering in nodal line Dirac semimetal ZrAs_{2}
Authors:
R. Bacewicz,
C. Jastrzębski,
K. Zberecki,
A. S. Wadge,
D. Jastrzębski,
A. Wiśniewski
Abstract:
We present a Raman study of ZrAs_{2} single crystals, a nodal line semimetal with symmetry-enforced Dirac-like band crossings. We identified the symmetry of phonon modes by polarized light measurements and comparison with calculated phonon frequencies. Significant dependence of peak intensities on the excitation wavelength was observed, indicating quantum interference effects. Phonon peaks in the…
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We present a Raman study of ZrAs_{2} single crystals, a nodal line semimetal with symmetry-enforced Dirac-like band crossings. We identified the symmetry of phonon modes by polarized light measurements and comparison with calculated phonon frequencies. Significant dependence of peak intensities on the excitation wavelength was observed, indicating quantum interference effects. Phonon peaks in the spectra are superimposed on the electronic background, with quasi-elastic scattering observed for the 785 nm excitation. We identified the Fano shape of the 171 cm^{-1} Ag mode due to interference of the phonon state with the electronic continuum. The temperature dependence of phonon peaks linewidth indicates that the electron-phonon coupling plays an essential role in phonon decay.
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Submitted 14 May, 2024; v1 submitted 26 April, 2024;
originally announced April 2024.
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Copper do** effects on the superconducting properties of Sm-based oxypnictides
Authors:
Mohammad Azam,
Manasa Manasa,
Tatiana Zajarniuk,
Taras Palasyuk,
Ryszard Diduszko,
Tomasz Cetner,
Andrzej Morawski,
Cezariusz Jastrzebski,
Michał Wierzbicki,
Andrzej Wiśniewski,
Shiv J. Singh
Abstract:
A systematic investigation has been performed by synthesis and comprehensive characterization of a series of SmFe1-xCuxAsO0.8F0.2 bulks (x = 0 to 0.2). These samples are well characterized by structural, Raman spectroscopy, microstructural, transport, magnetic measurements, and supplementary calculations within density functional theory (DFT). The parent compound, SmFeAsO0.8F0.2 (Sm1111), exhibits…
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A systematic investigation has been performed by synthesis and comprehensive characterization of a series of SmFe1-xCuxAsO0.8F0.2 bulks (x = 0 to 0.2). These samples are well characterized by structural, Raman spectroscopy, microstructural, transport, magnetic measurements, and supplementary calculations within density functional theory (DFT). The parent compound, SmFeAsO0.8F0.2 (Sm1111), exhibits a superconducting transition temperature (Tc) of approximately 54 K. The lattice volume (V) is increased with Cu substitution (x) without observing any impurity phase related to copper, which confirms the successful incorporation of Cu at Fe sites in the superconducting FeAs layers. These analyses are also well in agreement with Raman spectroscopy measurements and relevant DFT results. The superconducting transition is decreased systematically with copper do** and completely suppressed for 7% Cu-doped Sm1111 (x = 0.07). A large amount of Cu substitution (x greater than 0.07) has demonstrated the metal to insulate transition in the low-temperature range, and no impurity phase was observed even at high Cu do** levels (x = 0.2). The calculated critical current density of the parent sample is suppressed with copper substitution, suggesting the reduced pinning centers, sample density, and grain connections, as confirmed by the microstructural analysis. Our studies suggest that the substitution of Cu in the superconducting FeAs layer, resulting the enlargement of the lattice volume, is a source of strong disorder scattering, leading to the suppression of Tc and the emergence of metal-to-insulator, unlike the more successful carrier do** by nickel (Ni) or cobalt (Co), as previously reported.
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Submitted 9 April, 2024;
originally announced April 2024.
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Optimization of the plasmonic properties of titanium nitride films sputtered at room temperature through microstructure and thickness control
Authors:
Mateusz Nieborek,
Cezariusz Jastrzębski,
Tomasz Płociński,
Piotr Wróbel,
Aleksandra Seweryn,
Jarosław Judek
Abstract:
A current approach to depositing highly plasmonic titanium nitride films using the magnetron sputtering technique assumes that the process is performed at temperatures high enough to ensure the atoms have sufficient diffusivities to form dense and highly crystalline films. In this work, we demonstrate that the plasmonic properties of TiN films can be efficiently tuned even without intentional subs…
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A current approach to depositing highly plasmonic titanium nitride films using the magnetron sputtering technique assumes that the process is performed at temperatures high enough to ensure the atoms have sufficient diffusivities to form dense and highly crystalline films. In this work, we demonstrate that the plasmonic properties of TiN films can be efficiently tuned even without intentional substrate heating by influencing the details of the deposition process and entailed films' stoichiometry and microstructure. We also discuss the dependence of the deposition time/films' thickness on the optical properties, which is another degree of freedom in controlling the optical response of the refractory metal nitride films. The proposed strategy allows for robust and cost-effective production of large-scale substrates with good plasmonic properties in a CMOS technology-compatible process that can be further processed, e.g., structurized. All reported films are characterized by the maximal values of the plasmonic Figure of Merit (FoM = -e1/e2) ranging from 0.8 to 2.6, and the sample with the best plasmonic properties is characterized by FoM at 700 nm and 1550 nm that is equal 2.1 in both cases. These are outstanding results, considering the films' polycrystallinity and deposition at room temperature onto a non-matched substrate.
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Submitted 16 January, 2024;
originally announced January 2024.
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Temperature-dependent nonlinear phonon shifts in a supported MoS2 monolayer
Authors:
Andrzej Taube,
Jarosław Judek,
Cezariusz Jastrzębski,
Anna Duzynska,
Krzysztof Świtkowski,
Mariusz Zdrojek
Abstract:
We report Raman spectra measurements on a MoS2 monolayer supported on SiO2 as a function of temperature. Unlike in previous studies, the positions of the two main Raman modes, E2g1 and A1g exhibited nonlinear temperature dependence. Temperature dependence of phonon shifts and widths is explained by optical phonon decay process into two acoustic phonons. On the basis of Raman measurements, local te…
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We report Raman spectra measurements on a MoS2 monolayer supported on SiO2 as a function of temperature. Unlike in previous studies, the positions of the two main Raman modes, E2g1 and A1g exhibited nonlinear temperature dependence. Temperature dependence of phonon shifts and widths is explained by optical phonon decay process into two acoustic phonons. On the basis of Raman measurements, local temperature change under laser heating power at different global temperatures is derived. Obtained results contribute to our understanding of the thermal properties of two-dimensional atomic crystals and can help to solve the problem of heat dissipation, which is crucial for use in the next generation of nanoelectronic devices.
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Submitted 12 June, 2014;
originally announced June 2014.
