Showing 51–57 of 57 results for author: Jaroszynski, J

Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers

Authors: J. Jaroszynski, Dragana Popovic, T. M. Klapwijk

Abstract: Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional (2D) electron system in the vicinity of the metal-insulator transition occurs in all Si inversion layers. The size of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility samples. The behavior of the s… ▽ More Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional (2D) electron system in the vicinity of the metal-insulator transition occurs in all Si inversion layers. The size of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility samples. The behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics. △ Less

Submitted 18 December, 2002; v1 submitted 10 May, 2002; originally announced May 2002.

Comments: revtex4; 4+ pages, 5 figures

Journal ref: Phys. Rev. Lett. 89, 276401 (2002)

Effects of Spin Polarization on Electron Transport in Modulation Doped Cd(1-x)Mn(x)Te/Cd(1-y)Mg(y)Te:I Heterostructures

Authors: T. Andrearczyk, J. Jaroszynski, G. Karczewski, J. Wrobel, T. Wojtowicz, T. Dietl, E. Papis, E. Kami'nska, A. Piotrowska

Abstract: We examine and identify magnetoresistance mechanisms in 2D system containing a sizable concentration of magnetic ions. We argue that some of these mechanisms can serve as a tool to measure spin polarization. Lack of spin degeneracy and enhanced localization make it possible to detect an additional QHE plateau associated with extended states floating-up in vanishing magnetic field. We examine and identify magnetoresistance mechanisms in 2D system containing a sizable concentration of magnetic ions. We argue that some of these mechanisms can serve as a tool to measure spin polarization. Lack of spin degeneracy and enhanced localization make it possible to detect an additional QHE plateau associated with extended states floating-up in vanishing magnetic field. △ Less

Submitted 6 September, 2001; originally announced September 2001.

Comments: 4 revtex pages, 2 figures

Journal ref: Physica E 12, 361 (2002).

Carrier-induced ferromagnetism in p-Zn1-xMnxTe

Authors: D. Ferrand, J. Cibert, A. Wasiela, C. Bourgognon, S. Tatarenko, G. Fishman, T. Andrearczyk, J. Jaroszynski, S. Kolesnik, T. Dietl, B. Barbara, D. Dufeu

Abstract: We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped Zn1-xMnxTe epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance and spin-dependent Hall effect measurements. The… ▽ More We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped Zn1-xMnxTe epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance and spin-dependent Hall effect measurements. The experimental findings compare favorably, without adjustable parameters, with the prediction of the Rudermann-Kittel-Kasuya-Yosida (RKKY) model or its continuous-medium limit, that is, the Zener model, provided that the presence of the competing antiferromagnetic spin-spin superexchange interaction is taken into account, and the complex structure of the valence band is properly incorporated into the calculation of the spin susceptibility of the hole liquid. In general terms, the findings demonstrate how the interplay between the ferromagnetic RKKY interaction, carrier localization, and intrinsic antiferromagnetic superexchange affects the ordering temperature and the saturation value of magnetization in magnetically and electrostatically disordered systems. △ Less

Submitted 31 July, 2000; originally announced July 2000.

Comments: 14 pages, 10 figures

Journal ref: Phys. Rev. B 63, 085201 (2001)

Weak localization in the 2D metallic regime of Si-MOS

Authors: G. Brunthaler, A. Prinz, G. Bauer, V. M. Pudalov, E. M. Dizhur, J. Jaroszynski, P. Glod, T. Dietl

Abstract: The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the momentum relaxation time at 10 K but nearly 100 times longer at the lowest temperature. Nevertheless, only weak logarithmic corrections to the conductivity are pr… ▽ More The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the momentum relaxation time at 10 K but nearly 100 times longer at the lowest temperature. Nevertheless, only weak logarithmic corrections to the conductivity are present in the investigated temperature and concentration range thus proving the absence of strong quantum effects due to electron-electron interaction. From saturation effects of the phase coherence time a lower boundary for spin-orbit scattering of about 200 ps is estimated. △ Less

Submitted 2 November, 1999; originally announced November 1999.

Comments: 4 pages, 3 figures, Conf. on "Localization: Disorder and Interaction in Transport Phenomena" July 29 - August 2, 1999, Hamburg, Germany

Journal ref: Ann. Phys. 8, 579 (1999)

Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers

Authors: D. Ferrand, J. Cibert, C. Bourgognon, S. Tatarenko, A. Wasiela, G. Fishman, A. Bonanni, H. Sitter, S. Kolesnik, J. Jaroszynski, A. Barcz, T. Dietl

Abstract: p-type do** of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes c… ▽ More p-type do** of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes clearly induce a ferromagnetic interaction between the localized spins, which is discussed as a function of Mn content and hole concentration. △ Less

Submitted 8 October, 1999; originally announced October 1999.

Comments: 3 figures Ninth International Conference on II-VI Compounds, Kyoto, Japan, november 1999

Journal ref: J. Cryst. Growth 214/215 (2000) 387

Magnetoconductance noise and irreversibilities in submicron wires of spin-glass n-CdMnTe

Authors: J. Jaroszynski, J. Wrobel, G. Karczewski, T. Wojtowicz, T. Dietl

Abstract: Signatures of spin-glass freezing such as the appearance of 1/f conductance noise, the recovery of universal conductance fluctuations, aging, as well as magnetic and thermal irreversibilities are detected in mesoscopic wires of CdMnTe:I at millikelvin temperatures. Spectral characteristics of conductance time series are consistent with the droplet model of short-range spin-glasses. Signatures of spin-glass freezing such as the appearance of 1/f conductance noise, the recovery of universal conductance fluctuations, aging, as well as magnetic and thermal irreversibilities are detected in mesoscopic wires of CdMnTe:I at millikelvin temperatures. Spectral characteristics of conductance time series are consistent with the droplet model of short-range spin-glasses. △ Less

Submitted 29 April, 1998; originally announced April 1998.

Comments: 4 pages revtex, 3 gif figures, Phys. Rev. Lett. 98 (likely)

Report number: IF 09-97

Journal ref: Phys. Rev. Lett. 80 (1998) 5635

Interaction effects at the magnetic-field induced metal-insulator transition in Si/SiGe superlattices

Authors: G. Brunthaler, T. Dietl, A. Prinz, M. Sawicki, J. Jaroszynski, P. Glod, F. Schaffler, G. Bauer, D. K. Maude, J. C. Portal

Abstract: A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particl… ▽ More A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particle-hole diffusion channel. It is expected that this term, possibly together with the singlet particle-particle contribution, is of general importance in disordered n-type Si bulk and heterostructures. △ Less

Submitted 17 December, 1997; originally announced December 1997.

Comments: 5 pages, 3 figures, Solid State Communications, in print

Report number: HL-97-12

Journal ref: Solid State Commun. 106, 157 (1998)