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Impact of Neutron Irradiation on LGADs with a Carbon-Enriched Shallow Multiplication Layer: Degradation of Timing Performance and Gain
Authors:
E. Navarrete Ramos,
J. Duarte-Campderros,
M. Fernández,
G. Gómez,
J. González,
S. Hidalgo,
R. Jaramillo,
P. Martínez Ruiz del Árbol,
M. Moll,
C. Quintana,
A. K. Sikdar,
I. Vila,
J. Villegas
Abstract:
In this radiation tolerance study, Low Gain Avalanche Detectors (LGADs) with a carbon-enriched broad and shallow multiplication layer were examined in comparison to identical non-carbonated LGADs. Manufactured at IMB-CNM, the sensors underwent neutron irradiation at the TRIGA reactor in Ljubljana, reaching a fluence of $1.5e^{15} {n_{eq}} cm^{-2}$. The results revealed a smaller deactivation of bo…
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In this radiation tolerance study, Low Gain Avalanche Detectors (LGADs) with a carbon-enriched broad and shallow multiplication layer were examined in comparison to identical non-carbonated LGADs. Manufactured at IMB-CNM, the sensors underwent neutron irradiation at the TRIGA reactor in Ljubljana, reaching a fluence of $1.5e^{15} {n_{eq}} cm^{-2}$. The results revealed a smaller deactivation of boron and improved resistance to radiation in carbonated LGADs. The study demonstrated the potential benefits of carbon enrichment in mitigating radiation damage effects, particularly the acceptor removal mechanism, reducing the acceptor removal constant by more than a factor of two. Additionally, time resolution and collected charge degradation due to irradiation were observed, with carbonated samples exhibiting better radiation tolerance. A noise analysis focused on baseline noise and spurious pulses showed the presence of thermal-generated dark counts attributed to a too narrow distance between the gain layer end and the p-stop implant at the periphery of the pad for the characterized LGAD design; however, without significant impact of operation performance.
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Submitted 3 June, 2024;
originally announced June 2024.
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A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange
Authors:
Kevin Ye,
Ida Sadeghi,
Michael Xu,
Jack Van Sambeek,
Tao Cai,
Jessica Dong,
Rishabh Kothari,
James M. LeBeau,
R. Jaramillo
Abstract:
We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photocondu…
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We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high-selenium-content thin films with and without epitaxy. The manufacturing-compatible process of selenization in H2Se gas may spur the development of chalcogenide perovskite solar cell technology.
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Submitted 13 March, 2024;
originally announced March 2024.
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Vibrational properties differ between halide and chalcogenide perovskite semiconductors, and it matters for optoelectronic performance
Authors:
K. Ye,
M. Menahem,
T. Salzillo,
F. Knoop,
B. Zhao,
S. Niu,
O. Hellman,
J. Ravichandran,
R. Jaramillo,
O. Yaffe
Abstract:
We report a comparative study of temperature-dependent photoluminescence and structural dynamics of two perovskite semiconductors, the chalcogenide BaZrS$_3$ (BZS) and the halide CsPbBr$_3$ (CPB). These materials have similar crystal structures and direct band gaps, but we find that they have quite distinct optoelectronic and vibrational properties. Both materials exhibit thermally-activated non-r…
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We report a comparative study of temperature-dependent photoluminescence and structural dynamics of two perovskite semiconductors, the chalcogenide BaZrS$_3$ (BZS) and the halide CsPbBr$_3$ (CPB). These materials have similar crystal structures and direct band gaps, but we find that they have quite distinct optoelectronic and vibrational properties. Both materials exhibit thermally-activated non-radiative recombination, but the non-radiative recombination rate in BZS is between two and four orders of magnitude faster than in CPB. Raman spectroscopy reveals that the effects of phonon anharmonicity are far more pronounced in CPB than in BZS. Further, although both materials feature a large dielectric response due to low-energy polar optical phonons, the phonons in CPB are substantially lower in energy than in BZS. Our results suggest that electron-phonon coupling in BZS is more effective at non-radiative recombination than in CPB, and that BZS may also have a substantially higher concentration of non-radiative recombination centers than CPB. The low defect concentration in CPB may be related to the ease of lattice reconfiguration, typified by anharmonic bonding. It remains to be seen to what extent these differences are inherent to the chalcogenide and halide perovskites and to what extent they can be affected by materials processing; comparing BZS single-crystals and thin films provides reason for optimism.
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Submitted 14 April, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
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Pressure-Dependent Layer-by-Layer Oxidation of ZrS2(001) Surface
Authors:
Liqiu Yang,
Rafael Jaramillo,
Rajiv K. Kalia,
Aiichiro Nakano,
Priya Vashishta
Abstract:
Understanding oxidation mechanisms of layered semiconducting transition-metal dichalcogenide (TMDC) is important not only for controlling native oxide formation but also for synthesis of oxide and oxysulfide products. Here, reactive molecular dynamics simulations show that oxygen partial pressure controls not only the ZrS2 oxidation rate but also the oxide morphology and quality. We find a transit…
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Understanding oxidation mechanisms of layered semiconducting transition-metal dichalcogenide (TMDC) is important not only for controlling native oxide formation but also for synthesis of oxide and oxysulfide products. Here, reactive molecular dynamics simulations show that oxygen partial pressure controls not only the ZrS2 oxidation rate but also the oxide morphology and quality. We find a transition from layer-by-layer oxidation to amorphous-oxide-mediated continuous oxidation as the oxidation progresses, where different pressures selectively expose different oxidation stages within a given time window. While the kinetics of the fast continuous oxidation stage is well described by the conventional Deal-Grove model, the layer-by-layer oxidation stage is dictated by reactive bond-switching mechanisms. This work provides atomistic details and a potential foundation for rational pressure-controlled oxidation of broad TMDC materials.
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Submitted 6 March, 2023;
originally announced March 2023.
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Kinetic control for planar oxidation of MoS$_2$
Authors:
Kate Reidy,
Wouter Mortelmans,
Seong Soon Jo,
Aubrey Penn,
Baoming Wang,
Alexandre Foucher,
Frances M. Ross,
R. Jaramillo
Abstract:
Layered transition metal dichalcogenide (TMD) semiconductors oxidize readily in a variety of conditions, and a thorough understanding of this oxide formation is required for the advancement of TMD-based microelectronics. Here, we combine scanning transmission electron microscopy (STEM) with spectroscopic ellipsometry (SE) to investigate oxide formation at the atomic scale of the most widely-studie…
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Layered transition metal dichalcogenide (TMD) semiconductors oxidize readily in a variety of conditions, and a thorough understanding of this oxide formation is required for the advancement of TMD-based microelectronics. Here, we combine scanning transmission electron microscopy (STEM) with spectroscopic ellipsometry (SE) to investigate oxide formation at the atomic scale of the most widely-studied TMD, MoS$_2$. We find that aggressive thermal oxidation results in $α$-phase plate-like crystalline MoO$_3$ with sharp interfaces, voids, and a textured alignment with the underlying MoS$_2$. Experiments with remote substrates and patterned MoS$_2$ prove that thermal oxidation proceeds via vapor-phase mass transport and redeposition - a challenge to forming thin, conformal planar oxide films. We accelerate the kinetics of oxidation relative to the kinetics of mass transport using a non-thermal oxygen plasma process, to form a smooth and conformal amorphous oxide. The resulting amorphous MoO$_3$ films can be grown several nanometers thick, and we calibrate the oxidation rate for varying plasma processing conditions. Our results illustrate how TMD semiconductor oxidation differs significantly from oxidation of legacy semiconductors, most notably silicon, and provide quantitative guidance for managing both the atomic scale structure and thin film morphology of oxides in the design and processing of MoS$_2$ semiconductor devices.
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Submitted 30 November, 2022;
originally announced November 2022.
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A new semiconducting perovskite alloy system made possible by gas-source molecular beam epitaxy
Authors:
Ida Sadeghi,
Jack Van Sambeek,
Tigran Simonian,
Michael Xu,
Kevin Ye,
Valeria Nicolosi,
James M. LeBeau,
R. Jaramillo
Abstract:
Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular bea…
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Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular beam epitaxy (MBE). We stabilize the full range y = 0 ... 3 of compositions BaZrS$_{(3-y)}$Se$_y$ in the perovskite structure, up to and including BaZrSe$_3$, by growing on BaZrS$_3$ epitaxial templates. The resulting films are environmentally stable and the direct band gap ($E_g$) varies strongly with Se content, as predicted by theory, covering the range $E_g$ = 1.9 ... 1.4 eV for $y$ = 0 ... 3. This creates possibilities for visible and near-infrared (VIS-NIR) optoelectronics, solid state lighting, and solar cells using chalcogenide perovskites.
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Submitted 29 December, 2022; v1 submitted 19 November, 2022;
originally announced November 2022.
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Modeling Defect-Level Switching for Highly-Nonlinear and Hysteretic Electronic Devices
Authors:
Jiahao Dong,
R. Jaramillo
Abstract:
Many semiconductors feature defects with charge state transition levels that can switch due to structure changes following defect ionization: we call this defect-level switching (DLS). For example, DX centers in III-V compounds, and oxygen vacancies in ZnO, can switch between deep and shallow donor configurations, and these bistable dynamics are responsible for persistent photoconductivity. We rec…
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Many semiconductors feature defects with charge state transition levels that can switch due to structure changes following defect ionization: we call this defect-level switching (DLS). For example, DX centers in III-V compounds, and oxygen vacancies in ZnO, can switch between deep and shallow donor configurations, and these bistable dynamics are responsible for persistent photoconductivity. We recently demonstrated highly-nonlinear, hysteretic, two-terminal electronic devices using DLS in CdS [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys. Rev. Applied 15, 014014 (2021).] The resulting devices operate without mass transport, and in the opposite sense to most resistive switches: they are in a high-conductivity state at equilibrium, and switch to a low-conductivity state at forward bias. Although DLS uses the same defect transitions that are responsible for persistent photoconductivity, DLS devices operate without light and can be orders-of-magnitude faster due to exponential tuning of transition rates with voltage. In this work we use theory and numerical simulation to explore the design space of DLS devices, emphasizing the tradeoff between speed and on/off ratio. Our results will be useful to guide future applications of these unusual devices.
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Submitted 2 June, 2022;
originally announced June 2022.
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Making BaZrS3 chalcogenide perovskite thin films by molecular beam epitaxy
Authors:
Ida Sadeghi,
Kevin Ye,
Michael Xu,
James M. LeBeau,
R. Jaramillo
Abstract:
We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via two, competing g…
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We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via two, competing growth modes: buffered epitaxy, with a self-assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for develo** chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin films, as has been long-established for other systems including Si-Ge, III-Vs, and II-Vs. The methods demonstrated here also represent a revival of gas-source chalcogenide MBE.
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Submitted 21 May, 2021;
originally announced May 2021.
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Test beam characterization of sensor prototypes for the CMS Barrel MIP Timing Detector
Authors:
R. Abbott,
A. Abreu,
F. Addesa,
M. Alhusseini,
T. Anderson,
Y. Andreev,
A. Apresyan,
R. Arcidiacono,
M. Arenton,
E. Auffray,
D. Bastos,
L. A. T. Bauerdick,
R. Bellan,
M. Bellato,
A. Benaglia,
M. Benettoni,
R. Bertoni,
M. Besancon,
S. Bharthuar,
A. Bornheim,
E. Brücken,
J. N. Butler,
C. Campagnari,
M. Campana,
R. Carlin
, et al. (174 additional authors not shown)
Abstract:
The MIP Timing Detector will provide additional timing capabilities for detection of minimum ionizing particles (MIPs) at CMS during the High Luminosity LHC era, improving event reconstruction and pileup rejection. The central portion of the detector, the Barrel Timing Layer (BTL), will be instrumented with LYSO:Ce crystals and Silicon Photomultipliers (SiPMs) providing a time resolution of about…
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The MIP Timing Detector will provide additional timing capabilities for detection of minimum ionizing particles (MIPs) at CMS during the High Luminosity LHC era, improving event reconstruction and pileup rejection. The central portion of the detector, the Barrel Timing Layer (BTL), will be instrumented with LYSO:Ce crystals and Silicon Photomultipliers (SiPMs) providing a time resolution of about 30 ps at the beginning of operation, and degrading to 50-60 ps at the end of the detector lifetime as a result of radiation damage. In this work, we present the results obtained using a 120 GeV proton beam at the Fermilab Test Beam Facility to measure the time resolution of unirradiated sensors. A proof-of-concept of the sensor layout proposed for the barrel region of the MTD, consisting of elongated crystal bars with dimensions of about 3 x 3 x 57 mm$^3$ and with double-ended SiPM readout, is demonstrated. This design provides a robust time measurement independent of the impact point of the MIP along the crystal bar. We tested LYSO:Ce bars of different thickness (2, 3, 4 mm) with a geometry close to the reference design and coupled to SiPMs manufactured by Hamamatsu and Fondazione Bruno Kessler. The various aspects influencing the timing performance such as the crystal thickness, properties of the SiPMs (e.g. photon detection efficiency), and impact angle of the MIP are studied. A time resolution of about 28 ps is measured for MIPs crossing a 3 mm thick crystal bar, corresponding to an MPV energy deposition of 2.6 MeV, and of 22 ps for the 4.2 MeV MPV energy deposition expected in the BTL, matching the detector performance target for unirradiated devices.
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Submitted 16 July, 2021; v1 submitted 15 April, 2021;
originally announced April 2021.
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Growth kinetics and atomistic mechanisms of native oxidation of ZrS$_x$Se$_{2-x}$ and MoS$_2$ crystals
Authors:
Seong Soon Jo,
Akshay Singh,
Liqiu Yang,
Subodh C. Tiwari,
Sungwook Hong,
Aravind Krishnamoorthy,
Maria Gabriela Sales,
Sean M. Oliver,
Joshua Fox,
Randal L. Cavalero,
David W. Snyder,
Patrick M. Vora,
Stephen J. McDonnell,
Priya Vashishta,
Rajiv K. Kalia,
Aiichiro Nakano,
Rafael Jaramillo
Abstract:
A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and p…
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A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and proceeds by a mechanism of Zr-O bond switching, that collapses the van der Waals gaps, and is facilitated by progressive redox transitions of the chalcogen. The rate-limiting process is the formation and out-diffusion of SO$_2$. In contrast, MoS$_2$ basal surfaces are stable due to unfavorable oxygen adsorption. Our results provide insight and quantitative guidance for designing and processing semiconductor devices based on ZrS$_x$Se$_{2-x}$ and MoS$_2$, and identify the atomistic-scale mechanisms of bonding and phase transformations in layered materials with competing anions.
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Submitted 16 November, 2020; v1 submitted 30 June, 2020;
originally announced July 2020.
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Refractive uses of layered and two-dimensional materials for integrated photonics
Authors:
Akshay Singh,
Seong Soon Jo,
Yifei Li,
Changming Wu,
Mo Li,
R. Jaramillo
Abstract:
The scientific community has witnessed tremendous expansion of research on layered (i.e. two-dimensional, 2D) materials, with increasing recent focus on applications to photonics. Layered materials are particularly exciting for manipulating light in the confined geometry of photonic integrated circuits, where key material properties include strong and controllable light-matter interaction, and lim…
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The scientific community has witnessed tremendous expansion of research on layered (i.e. two-dimensional, 2D) materials, with increasing recent focus on applications to photonics. Layered materials are particularly exciting for manipulating light in the confined geometry of photonic integrated circuits, where key material properties include strong and controllable light-matter interaction, and limited optical loss. Layered materials feature tunable optical properties, phases that are promising for electro-optics, and a panoply of polymorphs that suggest a rich design space for highly-nonperturbative photonic integrated devices based on phase-change functionality. All of these features are manifest in materials with band gap above the photonics-relevant near-infrared (NIR) spectral band ($\sim$ 0.5 - 1 eV), meaning that they can be harnessed in refractive (i.e. non-absorptive) applications.
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Submitted 30 October, 2020; v1 submitted 30 June, 2020;
originally announced June 2020.
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Discovery of highly-polarizable semiconductors BaZrS3 and Ba3Zr2S7
Authors:
Stephen Filippone,
Boyang Zhao,
Shanyuan Niu,
Nathan Z. Koocher,
Daniel Silevitch,
Ignasi Fina,
James M. Rondinelli,
Jayakanth Ravichandran,
R. Jaramillo
Abstract:
There are few known semiconductors exhibiting both strong optical response and large dielectric polarizability. Inorganic materials with large dielectric polarizability tend to be wide-band gap complex oxides. Semiconductors with strong photoresponse to visible and infrared light tend to be weakly polarizable. Interesting exceptions to these trends are halide perovskites and phase-change chalcogen…
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There are few known semiconductors exhibiting both strong optical response and large dielectric polarizability. Inorganic materials with large dielectric polarizability tend to be wide-band gap complex oxides. Semiconductors with strong photoresponse to visible and infrared light tend to be weakly polarizable. Interesting exceptions to these trends are halide perovskites and phase-change chalcogenides. Here we introduce complex chalcogenides in the Ba-Zr-S system in perovskite and Ruddlesden-Popper structures as a new family of highly polarizable semiconductors. We report the results of impedance spectroscopy on single crystals that establish BaZrS3 and Ba3Zr2S7 as semiconductors with low-frequency relative dielectric constant ($ε_0$) in the range 50 - 100, and band gap in the range 1.3 - 1.8 eV. Our electronic structure calculations indicate the enhanced dielectric response in perovskite BaZrS3 versus Ruddlesden-Popper Ba3Zr2S7 is primarily due to enhanced IR mode-effective charges, and variations in phonon frequencies along $\langle 001 \rangle$; differences in the Born effective charges and the lattice stiffness are of secondary importance. This combination of covalent bonding in crystal structures more common to complex oxides results in a sizable Fröhlich coupling constant, which suggests that charge carriers are large polarons.
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Submitted 18 June, 2020;
originally announced June 2020.
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Defect Level Switching for Highly-Nonlinear and Hysteretic Electronic Devices
Authors:
Han Yin,
Abinash Kumar,
James M. LeBeau,
R. Jaramillo
Abstract:
Nonlinear and hysteretic electrical devices are needed for applications from circuit protection to next-generation computing. Widely-studied devices for resistive switching are based on mass transport, such as the drift of ions in an electric field, and on collective phenomena, such as insulator-metal transitions. We ask whether the large photoconductive response known in many semiconductors can b…
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Nonlinear and hysteretic electrical devices are needed for applications from circuit protection to next-generation computing. Widely-studied devices for resistive switching are based on mass transport, such as the drift of ions in an electric field, and on collective phenomena, such as insulator-metal transitions. We ask whether the large photoconductive response known in many semiconductors can be stimulated in the dark and harnessed to design electrical devices. We design and test devices based on photoconductive CdS, and our results are consistent with the hypothesis that resistive switching arises from point defects that switch between deep- and shallow-donor configurations: defect level switching (DLS). This new electronic device design principle - photoconductivity without photons - leverages decades of research on photoconductivity and defect spectroscopy. It is easily generalized and will enable the rational design of new nonlinear, hysteretic devices for future electronics.
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Submitted 16 May, 2020;
originally announced May 2020.
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In Praise and in Search of Highly-Polarizable Semiconductors
Authors:
Rafael Jaramillo,
Jayakanth Ravichandran
Abstract:
The dielectric response of materials underpins electronics and photonics. Established semiconductor materials have a narrow range of dielectric susceptibility, with low-frequency values on the order of 10. Strong and variable dielectric response in wide-band gap materials is associated with complex crystal structures and heavier elements. Based on underlying chemical trends, we hypothesize that ch…
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The dielectric response of materials underpins electronics and photonics. Established semiconductor materials have a narrow range of dielectric susceptibility, with low-frequency values on the order of 10. Strong and variable dielectric response in wide-band gap materials is associated with complex crystal structures and heavier elements. Based on underlying chemical trends, we hypothesize that chalcogenides in crystal structures common to complex oxides may feature many highly-polarizable semiconductors. Research on these materials is motivated by fundamental inquiry into electrons and phonons in solids, and by potential applications in photonics, high-frequency communications, and photovoltaics.
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Submitted 10 July, 2019;
originally announced July 2019.
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Near-infrared optical properties and proposed phase-change usefulness of transition metal disulfides
Authors:
Akshay Singh,
Yifei Li,
Balint Fodor,
Laszlo Makai,
Jian Zhou,
Haowei Xu,
Austin Akey,
Ju Li,
R. Jaramillo
Abstract:
The development of photonic integrated circuits would benefit from a wider selection of materials that can strongly-control near-infrared (NIR) light. Transition metal dichalcogenides (TMDs) have been explored extensively for visible spectrum opto-electronics, but the NIR properties of these layered materials have been less-studied. The measurement of optical constants is the foremost step to qual…
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The development of photonic integrated circuits would benefit from a wider selection of materials that can strongly-control near-infrared (NIR) light. Transition metal dichalcogenides (TMDs) have been explored extensively for visible spectrum opto-electronics, but the NIR properties of these layered materials have been less-studied. The measurement of optical constants is the foremost step to qualify TMDs for use in NIR photonics. Here we measure the complex optical constants for select sulfide TMDs (bulk crystals of MoS2, TiS2 and ZrS2) via spectroscopic ellipsometry in the visible-to-NIR range. Through Mueller matrix measurements and generalized ellipsometry, we explicitly measure the direction of the ordinary optical axis. We support our measurements with density functional theory (DFT) calculations, which agree with our measurements and predict giant birefringence. We further propose that TMDs could find use as photonic phase-change materials, by designing alloys that are thermodynamically adjacent to phase boundaries between competing crystal structures, to realize martensitic (i.e. displacive, order-order) switching.
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Submitted 23 May, 2019;
originally announced May 2019.
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Crystal growth and structural analysis of perovskite chalcogenide BaZrS$_3$ and Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$
Authors:
Shanyuan Niu,
Boyang Zhao,
Kevin Ye,
Elisabeth Bianco,
Jieyang Zhou,
Michael E. McConney,
Charles Settens,
Ralf Haiges,
R. Jaramillo,
Jayakanth Ravichandran
Abstract:
Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS$_3$ and its Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$ by flux method. X-ray diffraction analyses showed space g…
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Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS$_3$ and its Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$ by flux method. X-ray diffraction analyses showed space group of $Pnma$ with lattice constants of $a$ = 7.056(3) Å\/, $b$ = 9.962(4) Å\/, $c$ = 6.996(3) Å\/ for BaZrS$_3$ and $P4_2/mnm$ with $a$ = 7.071(2) Å\/, $b$ = 7.071(2) Å\/, $c$ = 25.418(5) Å\/ for Ba$_3$Zr$_2$S$_7$. Rocking curves with full-width-at-half-maximum of 0.011$^\circ$ for BaZrS$_3$ and 0.027$^\circ$ for Ba$_3$Zr$_2$S$_7$ were observed. Pole figure analysis, scanning transmission electron microscopy images and electron diffraction patterns also establish high quality of grown crystals. The octahedra tilting in the corner-sharing octahedra network are analyzed by extracting the torsion angles.
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Submitted 12 September, 2019; v1 submitted 25 April, 2019;
originally announced April 2019.
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Inverse Low Gain Avalanche Detectors (iLGADs) for precise tracking and timing applications
Authors:
E. Currás,
M. Carulla,
M. Centis Vignali,
J. Duarte-Campderros,
M. Fernández,
D. Flores,
A. García,
G. Gómez,
J. González,
S. Hidalgo,
R. Jaramillo,
A. Merlos,
M. Moll,
G. Pellegrini,
D. Quirion,
I. Vila
Abstract:
Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. B…
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Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. Besides, in his current technological incarnation, the timing resolution of the MTD LGAD sensors is severely degraded once the MIP particle hits the inter-pad region since the signal amplification is missing for this region. This limitation is named as the LGAD fill-factor problem. To overcome the fill factor problem and the poor position resolution of the MTD LGAD sensors, a p-in-p LGAD (iLGAD) was introduced. Contrary to the conventional LGAD, the iLGAD has a non-segmented deep p-well (the multiplication layer). Therefore, iLGADs should ideally present a constant gain value over all the sensitive region of the device without gain drops between the signal collecting electrodes; in other words, iLGADs should have a 100${\%}$ fill-factor by design. In this paper, tracking and timing performance of the first iLGAD prototypes is presented.
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Submitted 3 April, 2019;
originally announced April 2019.
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Results on Proton-Irradiated 3D Pixel Sensors Interconnected to RD53A Readout ASIC
Authors:
Jordi Duarte-Campderros,
Esteban Curras,
Marcos Fernandez,
Gervasio Gomez,
Andrea Garcia,
Javier Gonzalez,
Esther Silva,
Ivan Vila,
Richard Jaramillo,
Marco Meschini,
Rudy Ceccarelli,
Mauro Dinardo,
Simone Gennai,
Luigi Moroni,
Davide Zuolo,
Natale Demaria,
Ennio Monteil,
Luigi Gaioni,
Alberto Messineo,
Gian-Franco Dalla Beta,
Roberto Menicino,
Maurizio Boscardin
Abstract:
Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK (Italy) and IMB-CNM (Spain) have been tested before and after proton-irradiation to an equivalent fluence of about $1$ $\times$ $10^{16}$ $\text{n}_{\text{eq}}$ cm$^{-2}$ (1 MeV equivalent neutrons). This is the first time that one single collecting electrode fine pitch 3…
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Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK (Italy) and IMB-CNM (Spain) have been tested before and after proton-irradiation to an equivalent fluence of about $1$ $\times$ $10^{16}$ $\text{n}_{\text{eq}}$ cm$^{-2}$ (1 MeV equivalent neutrons). This is the first time that one single collecting electrode fine pitch 3D sensors are irradiated up to such fluence bump-bonded to a fine pitch ASIC. The preliminary analysis of the collected data shows no degradation on the hit detection efficiencies of the tested sensors after high energy proton irradiation, demonstrating the excellent radiation tolerance of the 3D pixel sensors. Thus, they will be excellent candidates for the extreme radiation environment at the innermost layers of the HL-LHC experiments.
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Submitted 29 August, 2019; v1 submitted 29 March, 2019;
originally announced March 2019.
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Ideal Bandgap in a 2D Ruddlesden-Popper Perovskite Chalcogenide for Single-junction Solar Cells
Authors:
Shanyuan Niu,
Debarghya Sarkar,
Kristopher Williams,
Yucheng Zhou,
Yuwei Li,
Elisabeth Bianco,
Huaixun Huyan,
Stephen B. Cronin,
Michael E. McConney,
Ralf Haiges,
R. Jaramillo,
David J. Singh,
William A. Tisdale,
Rehan Kapadia,
Jayakanth Ravichandran
Abstract:
Transition metal perovskite chalcogenides (TMPCs) are explored as stable, environmentally friendly semiconductors for solar energy conversion. They can be viewed as the inorganic alternatives to hybrid halide perovskites, and chalcogenide counterparts of perovskite oxides with desirable optoelectronic properties in the visible and infrared part of the electromagnetic spectrum. Past theoretical stu…
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Transition metal perovskite chalcogenides (TMPCs) are explored as stable, environmentally friendly semiconductors for solar energy conversion. They can be viewed as the inorganic alternatives to hybrid halide perovskites, and chalcogenide counterparts of perovskite oxides with desirable optoelectronic properties in the visible and infrared part of the electromagnetic spectrum. Past theoretical studies have predicted large absorption coefficient, desirable defect characteristics, and bulk photovoltaic effect in TMPCs. Despite recent progresses in polycrystalline synthesis and measurements of their optical properties, it is necessary to grow these materials in high crystalline quality to develop a fundamental understanding of their optical properties and evaluate their suitability for photovoltaic application. Here, we report the growth of single crystals of a two-dimensional (2D) perovskite chalcogenide, Ba3Zr2S7, with a natural superlattice-like structure of alternating double-layer perovskite blocks and single-layer rock salt structure. The material demonstrated a bright photoluminescence peak at 1.28 eV with a large external luminescence efficiency of up to 0.15%. We performed time-resolved photoluminescence spectroscopy on these crystals and obtained an effective recombination time of ~65 ns. These results clearly show that 2D Ruddlesden-Popper phases of perovskite chalcogenides are promising materials to achieve single-junction solar cells.
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Submitted 25 June, 2018;
originally announced June 2018.
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Large and Persistent Photoconductivity due to Hole-Hole Correlation in CdS
Authors:
Han Yin,
Austin Akey,
R. Jaramillo
Abstract:
Large and persistent photoconductivity (LPPC) in semiconductors is due to the trap** of photo-generated minority carriers at crystal defects. Theory has suggested that anion vacancies in II-VI semiconductors are responsible for LPPC due to negative-U behavior, whereby two minority carriers become kinetically trapped by lattice relaxation following photo-excitation. By performing a detailed analy…
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Large and persistent photoconductivity (LPPC) in semiconductors is due to the trap** of photo-generated minority carriers at crystal defects. Theory has suggested that anion vacancies in II-VI semiconductors are responsible for LPPC due to negative-U behavior, whereby two minority carriers become kinetically trapped by lattice relaxation following photo-excitation. By performing a detailed analysis of photoconductivity in CdS, we provide experimental support for this negative-U model of LPPC. We also show that LPPC is correlated with sulfur deficiency. We use this understanding to vary the photoconductivity of CdS films over nine orders of magnitude, and vary the LPPC characteristic decay time from seconds to 10^4 seconds, by controlling the activities of Cd^{2+} and S^{2-} ions during chemical bath deposition. We suggest a screening method to identify other materials with long-lived, non-equilibrium, photo-excited states based on the results of ground-state calculations of atomic rearrangements following defect redox reactions, with a conceptual connection to polaron formation.
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Submitted 5 June, 2018;
originally announced June 2018.
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First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC
Authors:
E. Currás,
J. Duarte-Campderrós,
M. Fernández,
A. García,
G. Gómez,
J. González,
R. Jaramillo,
D. Moya,
I. Vila,
S. Hidalgo,
M. Manna,
G. Pellegrini,
D. Quirion,
D. Pitzl,
A. Ebrahimi,
T. Rohe,
S. Wiederkehr
Abstract:
A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including effic…
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A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles.
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Submitted 4 June, 2018;
originally announced June 2018.
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Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early-stage photovoltaic material
Authors:
R. Jaramillo,
Meng-Ju Sher,
Benjamin K. Ofori-Okai,
V. Steinmann,
Chuanxi Yang,
Katy Hartman,
Keith A. Nelson,
Aaron M. Lindenberg,
Roy G. Gordon,
T. Buonassisi
Abstract:
Materials research with a focus on enhancing the minority-carrier lifetime of the light-absorbing semiconductor is key to advancing solar energy technology for both early-stage and mature material platforms alike. Tin sulfide (SnS) is an absorber material with several clear advantages for manufacturing and deployment, but the record power conversion efficiency remains below 5%. We report measureme…
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Materials research with a focus on enhancing the minority-carrier lifetime of the light-absorbing semiconductor is key to advancing solar energy technology for both early-stage and mature material platforms alike. Tin sulfide (SnS) is an absorber material with several clear advantages for manufacturing and deployment, but the record power conversion efficiency remains below 5%. We report measurements of bulk and interface minority-carrier recombination rates in SnS thin films using optical-pump, terahertz (THz)-probe transient photoconductivity (TPC) measurements. Post-growth thermal annealing in H_2S gas increases the minority-carrier lifetime, and oxidation of the surface reduces the surface recombination velocity. However, the minority-carrier lifetime remains below 100 ps for all tested combinations of growth technique and post-growth processing. Significant improvement in SnS solar cell performance will hinge on finding and mitigating as-yet-unknown recombination-active defects. We describe in detail our methodology for TPC experiments, and we share our data analysis routines as freely-available software.
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Submitted 24 November, 2015;
originally announced November 2015.
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Using atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface
Authors:
R. Jaramillo,
Amanda Youssef,
Austin Akey,
Frank Schoofs,
Shriram Ramanathan,
Tonio Buonassisi
Abstract:
We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the ZnO:Al films by two orders of magnitude but the Schottky barrier height remains constant, consistent with Fermi level pinning seen in metal / Si junctions. Atom probe tomography shows that Al segregates to the interface…
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We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the ZnO:Al films by two orders of magnitude but the Schottky barrier height remains constant, consistent with Fermi level pinning seen in metal / Si junctions. Atom probe tomography shows that Al segregates to the interface, so that the ZnO:Al at the junction is likely to be metallic even when the bulk of the ZnO:Al film is semiconducting. We hypothesize that Fermi level pinning is connected to the insulator-metal transition in doped ZnO, and that controlling this transition may be key to un-pinning the Fermi level in oxide / Si Schottky junctions.
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Submitted 29 October, 2015;
originally announced October 2015.
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Origins of bad metal conductivity and the insulator-metal transition in the rare-earth nickelates
Authors:
R. Jaramillo,
Sieu D. Ha,
D. M. Silevitch,
Shriram Ramanathan
Abstract:
For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenberg's uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3…
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For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenberg's uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3 thin films using infrared spectroscopy while varying T and disorder. We show that the interaction between lattice distortions and Ni-O bond covalence explains both the bad metal conduction and the insulator-metal transition in the nickelates by shifting spectral weight over the large energy scale established by the Ni-O orbital interaction, thus enabling very low σwhile preserving the Drude model and without violating the uncertainty principle.
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Submitted 27 September, 2013;
originally announced September 2013.
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Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism
Authors:
Sieu D. Ha,
R. Jaramillo,
D. M. Silevitch,
Frank Schoofs,
Kian Kerman,
John D. Baniecki,
Shriram Ramanathan
Abstract:
The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with va…
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The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with varying oxygen stoichiometry. We find that from room temperature through the high temperature insulator-metal transition, the Hall coefficient is hole-like and the Seebeck coefficient is electron-like. At low temperature the Néel transition induces a crossover in the sign of RH to electron-like, similar to the effects of spin density wave formation in metallic systems but here arising in an insulating phase ~200 K below the insulator-metal transition. We propose that antiferromagnetism can be stabilized by bandstructure even in insulating phases of correlated oxides, such as RNiO3, that fall between the limits of strong and weak electron correlation.
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Submitted 5 March, 2013; v1 submitted 9 January, 2013;
originally announced January 2013.
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Infrastructure for Detector Research and Development towards the International Linear Collider
Authors:
J. Aguilar,
P. Ambalathankandy,
T. Fiutowski,
M. Idzik,
Sz. Kulis,
D. Przyborowski,
K. Swientek,
A. Bamberger,
M. Köhli,
M. Lupberger,
U. Renz,
M. Schumacher,
Andreas Zwerger,
A. Calderone,
D. G. Cussans,
H. F. Heath,
S. Mandry,
R. F. Page,
J. J. Velthuis,
D. Attié,
D. Calvet,
P. Colas,
X. Coppolani,
Y. Degerli,
E. Delagnes
, et al. (252 additional authors not shown)
Abstract:
The EUDET-project was launched to create an infrastructure for develo** and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infras…
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The EUDET-project was launched to create an infrastructure for develo** and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry.
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Submitted 23 January, 2012;
originally announced January 2012.
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Resolving magnetic frustration in a pyrochlore lattice
Authors:
Jiyang Wang,
Yejun Feng,
R. Jaramillo,
Jasper van Wezel,
P. C. Canfield,
T. F. Rosenbaum
Abstract:
CeFe$_2$ is a geometrically frustrated ferromagnet that lies close to an instability at which a subtle change in the lattice symmetry couples to a transition to antiferromagnetism. We use x-ray diffraction, diamond-anvil-cell techniques, and numerical simulation to identify the ground states and to quantitatively illustrate effects of competing magnetic energy scales and geometrical frustration on…
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CeFe$_2$ is a geometrically frustrated ferromagnet that lies close to an instability at which a subtle change in the lattice symmetry couples to a transition to antiferromagnetism. We use x-ray diffraction, diamond-anvil-cell techniques, and numerical simulation to identify the ground states and to quantitatively illustrate effects of competing magnetic energy scales and geometrical frustration on the magnetic phase diagram. Comparison of phase transitions under both chemical substitution and applied pressure suggests a general solution to the physics of pyrochlore rare earth inter-metallic magnets.
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Submitted 27 September, 2011;
originally announced September 2011.
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Order parameter fluctuations at a buried quantum critical point
Authors:
Yejun Feng,
Jiyang Wang,
R. Jaramillo,
Jasper van Wezel,
S. Haravifard,
G. Srajer,
Y. Liu,
Z. -A. Xu,
P. B. Littlewood,
T. F. Rosenbaum
Abstract:
Quantum criticality is a central concept in condensed matter physics, but the direct observation of quantum critical fluctuations has remained elusive. Here we present an x-ray diffraction study of the charge density wave (CDW) in 2H-NbSe2 at high pressure and low temperature, where we observe a broad regime of order parameter fluctuations that are controlled by proximity to a quantum critical poi…
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Quantum criticality is a central concept in condensed matter physics, but the direct observation of quantum critical fluctuations has remained elusive. Here we present an x-ray diffraction study of the charge density wave (CDW) in 2H-NbSe2 at high pressure and low temperature, where we observe a broad regime of order parameter fluctuations that are controlled by proximity to a quantum critical point. X-rays can track the CDW despite the fact that the quantum critical regime is shrouded inside a superconducting phase, and, in contrast to transport probes, allow direct measurement of the critical fluctuations of the charge order. Concurrent measurements of the crystal lattice point to a critical transition that is continuous in nature. Our results confirm the longstanding expectations of enhanced quantum fluctuations in low dimensional systems, and may help to constrain theories of the quantum critical Fermi surface.
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Submitted 12 March, 2012; v1 submitted 1 September, 2011;
originally announced September 2011.
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First investigation of a novel 2D position-sensitive semiconductor detector concept
Authors:
D. Bassignana,
M. Fernandez,
R. Jaramillo,
M. Lozano,
F. J. Munoz,
G. Pellegrini,
D. Quirion,
I. Vila
Abstract:
This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Ne…
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This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal.
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Submitted 3 February, 2012; v1 submitted 27 June, 2011;
originally announced June 2011.
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Magnetism, structure, and charge correlation at a pressure-induced Mott-Hubbard insulator-metal transition
Authors:
Yejun Feng,
R. Jaramillo,
A. Banerjee,
J. M. Honig,
T. F. Rosenbaum
Abstract:
We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single crystal NiS2 across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic order results from superexchange among correlated electrons and couples to a (1/2, 1/2, 1/2) superlattice distortion. Applying pressure suppresses the insulating…
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We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single crystal NiS2 across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic order results from superexchange among correlated electrons and couples to a (1/2, 1/2, 1/2) superlattice distortion. Applying pressure suppresses the insulating state, but enhances the magnetism as the superexchange increases with decreasing lattice constant. By comparing our results under pressure to previous studies of doped crystals we show that this dependence of the magnetism on the lattice constant is consistent for both band broadening and band filling. In the high pressure metallic phase the lattice symmetry is reduced from cubic to monoclinic, pointing to the primary influence of charge correlations at the transition. There exists a wide regime of phase separation that may be a general characteristic of correlated quantum matter.
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Submitted 28 November, 2010; v1 submitted 11 April, 2010;
originally announced April 2010.
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Alignment of Silicon tracking systems R&D on Semitransparent Microstrip Sensors
Authors:
Jordi Duarte,
Marcos Fernandez,
Javier Gonzalez,
Richard Jaramillo,
Amparo Lopez,
Celso Martinez,
David Moya,
Alberto Ruiz,
I. Vila,
D. Bassignana,
E. Cabruja,
M. Lozano,
G. Pellegrini
Abstract:
We summarize the R&D activities on a novel semitransparent microstrip sensor to be used on laser-based alignment systems for silicon trackers. The new sensor is used both for particle tracking and laser detection. The aim of this research line is to increase the optical transmittance (T) of Silicon microstrips detectors to infrared light, introducing minor modifications to the sensor design stil…
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We summarize the R&D activities on a novel semitransparent microstrip sensor to be used on laser-based alignment systems for silicon trackers. The new sensor is used both for particle tracking and laser detection. The aim of this research line is to increase the optical transmittance (T) of Silicon microstrips detectors to infrared light, introducing minor modifications to the sensor design still suitable for its industrial production. The optical simulations used in the sensor design have been experimentally validated against several patterned material samples. This activities have been carried out in the context of SiLC collaboration for the next International Linear Collider.
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Submitted 9 January, 2009;
originally announced January 2009.
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Chromium at High Pressures: Weak Coupling and Strong Fluctuations in an Itinerant Antiferromagnet
Authors:
R. Jaramillo,
Yejun Feng,
J. C. Lang,
Z. Islam,
G. Srajer,
H. M. Ronnow,
P. B. Littlewood,
T. F. Rosenbaum
Abstract:
The spin- and charge-density-wave order parameters of the itinerant antiferromagnet chromium are measured directly with non-resonant x-ray diffraction as the system is driven towards its quantum critical point with high pressure using a diamond anvil cell. The exponential decrease of the spin and charge diffraction intensities with pressure confirms the harmonic scaling of spin and charge, while…
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The spin- and charge-density-wave order parameters of the itinerant antiferromagnet chromium are measured directly with non-resonant x-ray diffraction as the system is driven towards its quantum critical point with high pressure using a diamond anvil cell. The exponential decrease of the spin and charge diffraction intensities with pressure confirms the harmonic scaling of spin and charge, while the evolution of the incommensurate ordering vector provides important insight into the difference between pressure and chemical do** as means of driving quantum phase transitions. Measurement of the charge density wave over more than two orders of magnitude of diffraction intensity provides the clearest demonstration to date of a weakly-coupled, BCS-like ground state. Evidence for the coexistence of this weakly-coupled ground state with high-energy excitations and pseudogap formation above the ordering temperature in chromium, the charge-ordered perovskite manganites, and the blue bronzes, among other such systems, raises fundamental questions about the distinctions between weak and strong coupling.
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Submitted 28 February, 2008;
originally announced February 2008.
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Pressure-Tuned Spin and Charge Ordering in an Itinerant Antiferromagnet
Authors:
Yejun Feng,
R. Jaramillo,
G. Srajer,
J. C. Lang,
Z. Islam,
M. S. Somayazulu,
O. G. Shpyrko,
J. J. Pluth,
H. -k. Mao,
E. D. Isaacs,
G. Aeppli,
T. F. Rosenbaum
Abstract:
Elemental chromium orders antiferromagnetically near room temperature, but the ordering temperature can be driven to zero by applying large pressures. We combine diamond anvil cell and synchrotron x-ray diffraction techniques to measure directly the spin and charge order in the pure metal at the approach to its quantum critical point. Both spin and charge order are suppressed exponentially with…
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Elemental chromium orders antiferromagnetically near room temperature, but the ordering temperature can be driven to zero by applying large pressures. We combine diamond anvil cell and synchrotron x-ray diffraction techniques to measure directly the spin and charge order in the pure metal at the approach to its quantum critical point. Both spin and charge order are suppressed exponentially with pressure, well beyond the region where disorder cuts off such a simple evolution, and they maintain a harmonic scaling relationship over decades in scattering intensity. By comparing the development of the order parameter with that of the magnetic wavevector, it is possible to ascribe the destruction of antiferromagnetism to the growth in electron kinetic energy relative to the underlying magnetic exchange interaction.
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Submitted 13 August, 2007;
originally announced August 2007.
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Direct measurement of antiferromagnetic domain fluctuations
Authors:
O. G. Shpyrko,
E. D. Isaacs,
J. M. Logan,
Yejun Feng,
G. Aeppli,
R. Jaramillo,
H. C. Kim,
T. F. Rosenbaum,
P. Zschack,
M. Sprung,
S. Narayanan,
A. R. Sandy
Abstract:
Measurements of magnetic noise emanating from ferromagnets due to domain motion were first carried out nearly 100 years ago and have underpinned much science and technology. Antiferromagnets, which carry no net external magnetic dipole moment, yet have a periodic arrangement of the electron spins extending over macroscopic distances, should also display magnetic noise, but this must be sampled a…
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Measurements of magnetic noise emanating from ferromagnets due to domain motion were first carried out nearly 100 years ago and have underpinned much science and technology. Antiferromagnets, which carry no net external magnetic dipole moment, yet have a periodic arrangement of the electron spins extending over macroscopic distances, should also display magnetic noise, but this must be sampled at spatial wavelengths of order several interatomic spacings, rather than the macroscopic scales characteristic of ferromagnets. Here we present the first direct measurement of the fluctuations in the nanometre-scale spin- (charge-) density wave superstructure associated with antiferromagnetism in elemental Chromium. The technique used is X-ray Photon Correlation Spectroscopy, where coherent x-ray diffraction produces a speckle pattern that serves as a "fingerprint" of a particular magnetic domain configuration. The temporal evolution of the patterns corresponds to domain walls advancing and retreating over micron distances. While the domain wall motion is thermally activated at temperatures above 100K, it is not so at lower temperatures, and indeed has a rate which saturates at a finite value - consistent with quantum fluctuations - on cooling below 40K. Our work is important because it provides an important new measurement tool for antiferromagnetic domain engineering as well as revealing a fundamental new fact about spin dynamics in the simplest antiferromagnet.
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Submitted 10 February, 2007;
originally announced February 2007.
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Microscopic and Macroscopic Signatures of Antiferromagnetic Domain Walls
Authors:
R. Jaramillo,
T. F. Rosenbaum,
E. D. Isaacs,
O. G. Shpyrko,
P. G. Evans,
G. Aeppli,
Z. Cai
Abstract:
Magnetotransport measurements on small single crystals of Cr, the elemental antiferromagnet, reveal the hysteretic thermodynamics of the domain structure. The temperature dependence of the transport coefficients is directly correlated with the real-space evolution of the domain configuration as recorded by x-ray microprobe imaging, revealing the effect of antiferromagnetic domain walls on electr…
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Magnetotransport measurements on small single crystals of Cr, the elemental antiferromagnet, reveal the hysteretic thermodynamics of the domain structure. The temperature dependence of the transport coefficients is directly correlated with the real-space evolution of the domain configuration as recorded by x-ray microprobe imaging, revealing the effect of antiferromagnetic domain walls on electron transport. A single antiferromagnetic domain wall interface resistance is deduced to be of order $5\times10^{-5}\mathrm{μΩ\cdot cm^{2}}$ at a temperature of 100 K.
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Submitted 1 December, 2006;
originally announced December 2006.
