Showing 1–32 of 32 results for author: Janssen, T J B M

Rectification in mesoscopic AC-gated semiconductor devices

Authors: S. P. Giblin, M. Kataoka, J. D. Fletcher, P. See, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie

Abstract: We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assum… ▽ More We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assumptions about the stray impedances on the sample chip, over a wide frequency range. This method is applicable to many types of experiment which involve ac gating of a non-linear device, and where an undesireable rectified contribution to the measured signal is present. Finally, we evaluate the small rectified currents flowing in tunable-barrier electron pumps operated in the pinched-off regime. These currents are at most $10^{-12}$ of the pumped current for a pump current of 100 pA. This result is encouraging for the development of tunable-barrier pumps as metrological current standards. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Comments: 7 pages, 5 figures

Journal ref: Journal of Applied Physics vol. 114, 164505 (2013)

Error detection in a tunable-barrier electron pump

Authors: S. P. Giblin, P. See, J. D. Fletcher, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, I. Farrer, M. Kataoka

Abstract: We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulation… ▽ More We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulations we show that, with optimised QD-PC coupling, the experiment can make single-shot measurements of the number of electrons in the QD with sufficiently high fidelity to test the error rate of the electron pump with metrological precision. △ Less

Submitted 26 September, 2018; originally announced September 2018.

Comments: 6 pages, 4 figures. This is an unpublished study preceding the work published as "High-resolution error detection in the capture process of a single-electron pump", Applied Physics Letters vol. 108, 023502 (2016)

High-resolution error detection in the capture process of a single-electron pump

Authors: S. P. Giblin, P. See, A. Petrie, T. J. B. M. Janssen, I. Farrer, J. P. Griffiths, G. A. C. Jones, D. A. Ritchie, M. Kataoka

Abstract: The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pum**. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC curre… ▽ More The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pum**. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC current, and repeating the protocol more than $10^{6}$ times, we are able to resolve errors with probabilities of order $10^{-6}$. For the studied sample, one-electron capture is affected by errors in $\sim30$ out of every million cycles, while two-electron capture was performed more than $10^6$ times with only one error. For errors in one-electron capture, we detect both failure to capture an electron, and capture of two electrons. Electron counting measurements are a valuable tool for investigating non-equilibrium charge capture dynamics, and necessary for validating the metrological accuracy of semiconductor electron pumps. △ Less

Submitted 26 September, 2018; originally announced September 2018.

Comments: 5 pages, 4 figures

Journal ref: Applied Physics Letters vol. 108, 023502 (2016)

LO-phonon emission rate of hot electrons from an on-demand single-electron source in a GaAs/AlGaAs heterostructure

Authors: N. Johnson, C. Emary, S. Ryu, H. -S. Sim, P. See, J. D. Fletcher, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper, T. J. B. M. Janssen, M. Kataoka

Abstract: Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a tw… ▽ More Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a two-step process via intra-Landau-level transition. We show this scattering can be suppressed by controlling the edge potential profile, and a scattering length > 1 mm can be achieved, allowing the use of this system for scalable single-electron device applications. △ Less

Submitted 25 December, 2017; originally announced December 2017.

Comments: 5 pages and supplementary

Journal ref: Phys. Rev. Lett. 121, 137703 (2018)

Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC

Authors: Cassandra Chua, Arseniy Lartsev, **ggao Sui, Vishal Panchal, Reuben Puddy, Carly Richardson, Charles G. Smith, T. J. B. M. Janssen, Alexander Tzalenchuk, Rositsa Yakimova, Sergey Kubatkin, Malcolm R. Connolly

Abstract: We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of do**, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type do** close to charge neutrality, electron transport resembles that in exfoliated graphen… ▽ More We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of do**, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type do** close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below $T^*$, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder. △ Less

Submitted 31 March, 2017; originally announced March 2017.

Ultrafast Voltage Sampling using Single-Electron Wavepackets

Authors: N. Johnson, J. D. Fletcher, D. A. Humphreys, P. See, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper, T. J. B. M Janssen, M. Kataoka

Abstract: We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact w… ▽ More We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact with the barrier, which can be made as small as a few picoseconds. The value of the instantaneous voltage can be determined by varying the gate voltage to match the barrier height to the electron energy, which is used as a stable reference. The test waveform can be reconstructed by shifting the electron arrival time against it. We argue that this method has scope to increase the bandwidth of voltage sampling to 100 GHz and beyond. △ Less

Submitted 14 October, 2016; v1 submitted 3 October, 2016; originally announced October 2016.

Comments: 9 pages, 4 figures

Journal ref: Appl. Phys. Lett. 110, 102105 (2017)

Time-of-Flight Measurements of Single-Electron Wave Packets in Quantum-Hall Edge States

Authors: M. Kataoka, N. Johnson, C. Emary, P. See, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper, T. J. B. M. Janssen

Abstract: We report time-of-flight measurements on electrons travelling in quantum-Hall edge states. Hot-electron wave packets are emitted one per cycle into edge states formed along a depleted sample boundary. The electron arrival time is detected by driving a detector barrier with a square wave that acts as a shutter. By adding an extra path using a deflection barrier, we measure a delay in the arrival ti… ▽ More We report time-of-flight measurements on electrons travelling in quantum-Hall edge states. Hot-electron wave packets are emitted one per cycle into edge states formed along a depleted sample boundary. The electron arrival time is detected by driving a detector barrier with a square wave that acts as a shutter. By adding an extra path using a deflection barrier, we measure a delay in the arrival time, from which the edge-state velocity $v$ is deduced. We find that $v$ follows $1/B$ dependence, in good agreement with the $\vec{E} \times \vec{B}$ drift. The edge potential is estimated from the energy-dependence of $v$ using a harmonic approximation. △ Less

Submitted 9 December, 2015; originally announced December 2015.

Journal ref: Phys. Rev. Lett. 116, 126803 (2016)

Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system

Authors: T. J. B. M. Janssen, S. Rozhko, I. Antonov, A. Tzalenchuk, J. M. Williams, Z. Melhem, H. He, S. Lara-Avila, S. Kubatkin, R. Yakimova

Abstract: We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8K and magnetic fields below 5T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of primary quantum standards for precision electrical metrology. This significant a… ▽ More We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8K and magnetic fields below 5T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of primary quantum standards for precision electrical metrology. This significant advance in technology has come about as a result of the unique properties of epitaxial graphene on SiC. △ Less

Submitted 16 July, 2015; originally announced July 2015.

Comments: 15 pages, 9 figures

Journal ref: 2D Materials 2 (2015) 035015

Influence of impurity spin dynamics on quantum transport in epitaxial graphene

Authors: Samuel Lara-Avila, Sergey Kubatkin, Oleksiy Kashuba, Joshua A. Folk, Silvia Lüscher, Rositza Yakimova, T. J. B. M. Janssen, Alexander Tzalenchuk, Vladimir Fal'ko

Abstract: Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is cau… ▽ More Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is caused at least in part by spinful scatterers. A non-monotonic dependence of effective decoherence rate on $B_{\parallel}$ reveals the intricate role of scatterers' spin dynamics in forming the interference correction to conductivity, an effect that has gone unnoticed in earlier weak localisation studies △ Less

Submitted 14 July, 2015; originally announced July 2015.

Journal ref: Phys. Rev. Lett. 115, 106602 (2015)

Disorder induced Dirac-point physics in epitaxial graphene from temperature-dependent magneto-transport measurements

Authors: J. Huang, J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen, A. Tzalenchuk, V. Antonov, T. Yager, S. Lara-Avila, S. Kubatkin, R. Yakimova, R. J. Nicholas

Abstract: We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder… ▽ More We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2 $\sim$ 31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be $3.0 \sim 9.1 \times 10^{10}$ cm$^{-2}$ for our samples. An asymmetry in the electron/hole scattering is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder potential, in good agreement with quantum-mechanical numerical calculations. △ Less

Submitted 14 May, 2015; originally announced May 2015.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 92, 075407 (2015)

Measurement and control of electron wave packets from a single-electron source

Authors: J. Waldie, P. See, V. Kashcheyevs, J. P. Griffiths, I. Farrer, G. A. C. Jones, D. A. Ritchie, T. J. B. M. Janssen, M. Kataoka

Abstract: We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine… ▽ More We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine the upper-bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage waveform that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons. △ Less

Submitted 22 July, 2015; v1 submitted 24 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. B 92, 125305 (2015)

Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene

Authors: J. Huang, J. A. Alexander-Webber, T. J. B. M. Janssen, A. Tzalenchuk, T. Yager, S. Lara-Avila, S. Kubatkin, R. L. Myers-Ward, V. D. Wheeler, D. K. Gaskill, R. J. Nicholas

Abstract: Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interaction… ▽ More Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interactions with a deformation potential coupling constant of 22 eV. A carrier density dependence $n_e^{-1.5}$ in the scaling of the $T^4$ power law is observed in bilayer graphene, in contrast to the $n_e^{-0.5}$ dependence in monolayer graphene, leading to a crossover in the energy loss rate as a function of carrier density between these two systems. The electron-phonon relaxation time in bilayer graphene is also shown to be strongly carrier density dependent, while it remains constant for a wide range of carrier densities in monolayer graphene. Our results and comparisons between the bilayer and monolayer exhibit a more comprehensive picture of hot carrier dynamics in graphene systems. △ Less

Submitted 22 September, 2014; originally announced September 2014.

Comments: 9 pages, 8 figures

Journal ref: J. Phys.: Condens. Matter 27 164202 (2015)

Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

Authors: C. J. Chua, M. R. Connolly, A. Lartsev, T. Yager, S. Lara-Avila, S. Kubatkin, S. Kopylov, V. I. Fal'ko, R. Yakimova, R. Pearce, T. J. B. M. Janssen, A. Ya. Tzalenchuk, C. G. Smith

Abstract: We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons… ▽ More We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe. △ Less

Submitted 27 October, 2014; v1 submitted 22 May, 2014; originally announced May 2014.

Comments: 5 pages, 5 figures

Journal ref: Nano Letters, 2014, 14 (6), pp 3369-3373

Weak localization scattering lengths in epitaxial, and CVD graphene

Authors: A. M. R. Baker, J. A. Alexander-Webber, T. Altebaeumer, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, C. -T. Lin, L. -J. Li, R. J. Nicholas

Abstract: Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L… ▽ More Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L$_\varphi$, L$_i$, and L$_*$ on carrier density. We find no significant carrier dependence for L$_\varphi$, a weak decrease for L$_i$ with increasing carrier density just beyond a large standard error, and a n$^{-\frac{1}{4}}$ dependence for L$_*$. We demonstrate that currents as low as 0.01\,nA are required in smaller devices to avoid hot-electron artefacts in measurements of the quantum corrections to conductivity. △ Less

Submitted 10 May, 2013; originally announced May 2013.

Journal ref: Phys. Rev. B86 235441 (2012)

Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene

Authors: J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, B. A. Piot, D. K. Maude, R. J. Nicholas

Abstract: We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$)… ▽ More We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$) dependence and persists up to $T_c>45K$ at 29T. With magnetic field $I_c$ was found to increase $\propto B^{3/2}$ and $T_c \propto B^{1.88}$. As the Fermi energy approaches the Dirac point, the $ν=2$ quantized Hall plateau appears continuously from fields as low as 1T up to at least 19T due to a strong magnetic field dependence of the carrier density. △ Less

Submitted 17 April, 2013; originally announced April 2013.

Quantum resistance metrology using graphene

Authors: T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, V. I. Fal'ko

Abstract: In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphe… ▽ More In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also brie y discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally we discuss other possible applications of graphene in metrology. △ Less

Submitted 18 July, 2013; v1 submitted 15 March, 2013; originally announced March 2013.

Comments: arXiv admin note: substantial text overlap with arXiv:1202.2985

Journal ref: Progress in Physics 76, 104501 (2013)

Clock-controlled emission of single-electron wavepackets in a solid-state circuit

Authors: J. D. Fletcher, M. Kataoka, H. Howe, M. Pepper, P. See, S. P. Giblin, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, T. J. B. M. Janssen

Abstract: We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phon… ▽ More We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phonon scattering. Using a time-resolved spectroscopic technique, we measure the electron energy and wavepacket size at picosecond time scales. We also show how our technique can be used to switch individual electrons into different paths. △ Less

Submitted 20 February, 2013; v1 submitted 20 December, 2012; originally announced December 2012.

Journal ref: Phys. Rev. Lett. 111, 216807 (2013)

Energy loss rates of hot Dirac fermions in epitaxial, exfoliated and CVD graphene

Authors: A. M. R. Baker J. A. Alexander-Webber, T. Altebaeumer, S. D. McMullan, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, C. -T Lin, L. -J Li, R. J. Nicholas

Abstract: Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, wi… ▽ More Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by $\sim$40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of $T_{e}^4$ at low temperatures and depend weakly on carrier density $\propto$ n$^{-1/2}$ evidence for enhancement of the energy loss rate due to disorder in CVD samples. △ Less

Submitted 19 December, 2012; originally announced December 2012.

Comments: 8 figs PRB in press

Gigahertz quantized charge pum** in graphene quantum dots

Authors: M. R. Connolly, K. L. Chiu, S. P. Giblin, M. Kataoka, J. D. Fletcher, C. Chua, J. P. Griffiths, G. A. C. Jones, V. I. Fal'ko, C. G. Smith, T. J. B. M. Janssen

Abstract: Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pum** speeds corresponding to small currents of the order 1… ▽ More Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pum** speeds corresponding to small currents of the order 1 pA. Tunable barrier pumps in semiconductor structures have been operated at GHz frequencies, but the theoretical treatment of the error rate is more complex and only approximate predictions are available. Here, we present a monolithic, fixed barrier single electron pump made entirely from graphene. We demonstrate pump operation at frequencies up to 1.4 GHz, and predict the error rate to be as low as 0.01 parts per million at 90 MHz. Combined with the record-high accuracy of the quantum Hall effect and proximity induced Josephson junctions, accurate quantized current generation brings an all-graphene closure of the quantum metrological triangle within reach. Envisaged applications for graphene charge pumps outside quantum metrology include single photon generation via electron-hole recombination in electrostatically doped bilayer graphene reservoirs, and for readout of spin-based graphene qubits in quantum information processing. △ Less

Submitted 27 July, 2012; originally announced July 2012.

Comments: 13 pages, 11 figures, includes supplementary information

Journal ref: Nature Nanotechnology (2013)

Precision comparison of the quantum Hall effect in graphene and gallium arsenide

Authors: T. J. B. M. Janssen, J. M. Williams, N. E. Fletcher, R. Goebel, A. Tzalenchuk, R. Yakimova, S. Lara-Avila, S. Kubatkin, V. I. Fal'ko

Abstract: The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation… ▽ More The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation $R_{\rm K}=h/e^2$, and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterisation of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget. △ Less

Submitted 14 February, 2012; originally announced February 2012.

Journal ref: Metrologia 49 (2012) 294-306

Towards a quantum representation of the ampere using single electron pumps

Authors: S. P. Giblin, M. Kataoka, J. D. Fletcher, P. See, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie

Abstract: Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially design… ▽ More Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially designed gate drive waveforms. Our pump can generate a current of up to 150 pA, corresponding to almost a billion electrons per second, with an experimentally demonstrated current accuracy better than 1.2 parts per million (ppm) and strong evidence, based on fitting data to a model, that the true accuracy is approaching 0.01 ppm. This type of pump is a promising candidate for further development as a realisation of the SI base unit ampere, following a re-definition of the ampere in terms of a fixed value of the elementary charge. △ Less

Submitted 10 July, 2012; v1 submitted 12 January, 2012; originally announced January 2012.

Comments: 8 pages, 7 figures

Journal ref: Nat. Commun. 3:930 (2012)

Stabilization of single-electron pumps by high magnetic fields

Authors: J. D. Fletcher, M. Kataoka, S. P. Giblin, Sunghun Park, H. -S. Sim, P. See, T. J. B. M. Janssen, J. P. Griffiths, G. A. C. Jones, H. E. Beere, D. A. Ritchie

Abstract: We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabati… ▽ More We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabatic excitations are also suppressed due to a reduced sensitivity of the Fock-Darwin states to electrostatic potential. The combination of these effects leads to significantly more accurate current quantization. △ Less

Submitted 31 August, 2012; v1 submitted 22 July, 2011; originally announced July 2011.

Graphene, universality of the quantum Hall effect and redefinition of the SI system

Authors: T. J. B. M. Janssen, N. E. Fletcher, R. Goebel, J. M. Williams, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, V. I. Falko

Abstract: The Système Internationale d'unités (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships which link these constants to measurable quantities. Here we directly compare the integer quantum Hall effect in epitaxial… ▽ More The Système Internationale d'unités (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships which link these constants to measurable quantities. Here we directly compare the integer quantum Hall effect in epitaxial graphene with that in GaAs/AlGaAs heterostructures. We find no difference of the quantized resistance value within the relative standard uncertainty of our measurement of 8.6\times10-11, being the most stringent test of the universality of the quantum Hall effect in terms of material independence. △ Less

Submitted 15 September, 2011; v1 submitted 20 May, 2011; originally announced May 2011.

Journal ref: New Journal of Physics, 13 (2011) 093026

Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

Authors: T. J. B. M. Janssen, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, S. Kopylov, V. Fal'ko

Abstract: We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. O… ▽ More We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 10^10 in the Hall resistance quantization measurements. △ Less

Submitted 17 May, 2011; v1 submitted 17 September, 2010; originally announced September 2010.

Journal ref: Phys. Rev. B 83, 233402 (2011)

Single- and few-electron dynamic quantum dots in a perpendicular magnetic field

Authors: S. J. Wright, A. L. Thorn, M. D. Blumenthal, S. P. Giblin, M. Pepper, T. J. B. M. Janssen, M. Kataoka, J. D. Fletcher, G. A. C. Jones, C. A. Nicoll, Godfrey Gumbs, D. A. Ritchie

Abstract: We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B>3T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local diso… ▽ More We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B>3T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local disorder. The results are significant for the development of dynamic quantum dot pumps as quantum standards of electrical current. △ Less

Submitted 1 September, 2010; originally announced September 2010.

Comments: 5 pages, 4 figures, submitted to J. Appl. Phys. as an invited paper for ICPS-30, 25th-30th July, Seoul, SK

Journal ref: J. Appl. Phys. 109, 102422 (2011)

Accurate high speed single-electron quantum dot preparation

Authors: S. P. Giblin, S. J. Wright, J. Fletcher, M. Kataoka, M. Pepper, T. J. B. M. Janssen, D. A. Ritchie, C. A. Nicoll, D. Anderson, G. A. C. Jones

Abstract: Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, tho… ▽ More Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high frequency operation, have not been tested in detail. We present high accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single AC-modulated gate driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a model used to describe the pum** cycle. △ Less

Submitted 5 May, 2010; v1 submitted 30 March, 2010; originally announced March 2010.

Comments: 12 pages, 3 figures

Journal ref: New J.Phys.12:073013,2010

Quantum Resistance Standard Based on Epitaxial Graphene

Authors: Alexander Tzalenchuk, Samuel Lara-Avila, Alexei Kalaboukhov, Sara Paolillo, Mikael Syväjärvi, Rositza Yakimova, Olga Kazakova, T. J. B. M. Janssen, Vladimir Fal'ko, Sergey Kubatkin

Abstract: We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resis… ▽ More We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics. △ Less

Submitted 7 September, 2009; originally announced September 2009.

Comments: Submitted

Journal ref: Nature Nanotechnology 5, 186 - 189 (2010)

Enhanced current quantization in high frequency electron pumps in a perpendicular magnetic field

Authors: S. J. Wright, M. D. Blumenthal, Godfrey Gumbs, A. L. Thorn, M. Pepper, T. J. B. M. Janssen, S. N. Holmes, D. Anderson, G. A. C. Jones, C. A. Nicoll, D. A. Ritchie

Abstract: We present experimental results of high frequency quantized charge pum** through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plat… ▽ More We present experimental results of high frequency quantized charge pum** through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plateaus and improvements in the quantization as a result of the applied B field. △ Less

Submitted 27 November, 2008; v1 submitted 4 November, 2008; originally announced November 2008.

Comments: 4 pages, 4 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 78, 233311 (2008)

Single-parameter non-adiabatic quantized charge pum**

Authors: B. Kaestner, V. Kashcheyevs, S. Amakawa, L. Li, M. D. Blumenthal, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher

Abstract: Controlled charge pum** in an AlGaAs/GaAs gated nanowire by single-parameter modulation is studied experimentally and theoretically. Transfer of integral multiples of the elementary charge per modulation cycle is clearly demonstrated. A simple theoretical model shows that such a quantized current can be generated via loading and unloading of a dynamic quasi-bound state. It demonstrates that no… ▽ More Controlled charge pum** in an AlGaAs/GaAs gated nanowire by single-parameter modulation is studied experimentally and theoretically. Transfer of integral multiples of the elementary charge per modulation cycle is clearly demonstrated. A simple theoretical model shows that such a quantized current can be generated via loading and unloading of a dynamic quasi-bound state. It demonstrates that non-adiabatic blockade of unwanted tunnel events can obliterate the requirement of having at least two phase-shifted periodic signals to realize quantized pum**. The simple configuration without multiple pum** signals might find wide application in metrological experiments and quantum electronics. △ Less

Submitted 6 July, 2007; originally announced July 2007.

Comments: 4 pages, 4 figures

Journal ref: Physical Review B 77, 153301 (2008)

Low-dimensional light-emitting transistor with tunable recombination zone

Authors: B. Kaestner, J. Wunderlich, T. J. B. M. Janssen

Abstract: We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a modulation doped GaAs/AlGaAs heterostructure. In this device electrons and holes can be directed to the same area by drain and gate voltages, defining a recombin… ▽ More We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a modulation doped GaAs/AlGaAs heterostructure. In this device electrons and holes can be directed to the same area by drain and gate voltages, defining a recombination zone tunable in size and position. It could therefore provide an architecture for probing low-dimensional devices by analysing the emitted light of the recombination zone. △ Less

Submitted 17 August, 2006; originally announced August 2006.

Comments: 12 Pages, to be published in Journal of Modern Optics

Journal ref: Journal of Modern Optics 54, 431 (2007)

Quantized charge pum** through a quantum dot by surface acoustic waves

Authors: J. Ebbecke, N. E. Fletcher, T. J. B. M. Janssen, F. J. Ahlers, M. Pepper, H. E. Beere, D. A. Ritchie

Abstract: We present a realization of quantized charge pum**. A lateral quantum dot is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface acoustic wave whose wavelength is twice the dot length is used to pump single electrons through the dot at a frequency f=3GHz. The pumped current shows a regular pattern of quantization at values I=nef over a range of gate voltage and wave amp… ▽ More We present a realization of quantized charge pum**. A lateral quantum dot is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface acoustic wave whose wavelength is twice the dot length is used to pump single electrons through the dot at a frequency f=3GHz. The pumped current shows a regular pattern of quantization at values I=nef over a range of gate voltage and wave amplitude settings. The observed values of n, the number of electrons transported per wave cycle, are determined by the number of electronic states in the quantum dot brought into resonance with the fermi level of the electron reservoirs during the pum** cycle. △ Less

Submitted 11 December, 2003; originally announced December 2003.

Comments: 8 pages

Quantized charge transport through a static quantum dot using a surface acoustic wave

Authors: N. E. Fletcher, J. Ebbecke, T. J. B. M. Janssen, F. J. Ahlers, M. Pepper, H. E. Beere, D. A. Ritchie

Abstract: We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized transport is observed at low RF powers where the surface acoustic wave amplitude is comparable to the quantum dot charging energy. In this regime resonant transp… ▽ More We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized transport is observed at low RF powers where the surface acoustic wave amplitude is comparable to the quantum dot charging energy. In this regime resonant transport through the single-electron dot state occurs which we interpret as turnstile-like operation in which the traveling wave amplitude modulates the entrance and exit barriers of the quantum dot in a cyclic fashion at GHz frequencies. For high RF powers, where the amplitude of the surface acoustic wave is much larger than the quantum dot energies, the quantized acoustoelectric current transport shows behavior consistent with previously reported results. However, in this regime, the number of quantized current plateaus observed and the plateau widths are determined by the properties of the quantum dot, demonstrating that the microscopic detail of the potential landscape in the split gate channel has a profound influence on the quantized acoustoelectric current transport. △ Less

Submitted 20 August, 2003; originally announced August 2003.

Comments: 9 pages