Showing 1–25 of 25 results for author: Janod, E

Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics

Authors: D. Babich, J. Tranchant, C. Adda, B. Corraze, M. -P. Besland, P. Warnicke, D. Bedau, P. Bertoncini, J. -Y. Mevellec, B. Humbert, J. Rupp, T. Hennen, D. Wouters, R. Llopis, L. Cario, E. Janod

Abstract: Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still… ▽ More Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved μ-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics. △ Less

Submitted 20 October, 2021; v1 submitted 11 May, 2021; originally announced May 2021.

Comments: 14 pages, 5 figures + Supplementary Materials (14 pages, 7 figures)

Novel $J_{\rm{eff}}$=3/2 Metallic Phase and Unconventional Superconductivity in GaTa$_4$Se$_8$

Authors: Min Yong Jeong, Seo Hyoung Chang, Hyeong Jun Lee, Jae-Hoon Sim, Kyeong Jun Lee, Etienne Janod, Laurent Cario, Ayman Said, Wenli Bi, Philipp Werner, Ara Go, Jungho Kim, Myung Joon Han

Abstract: By means of density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations and resonant inelastic x-ray scattering (RIXS) experiments, we investigate the high-pressure phases of the spin-orbit-coupled $J_{\rm{eff}}=3/2$ insulator GaTa$_4$Se$_8$. Its metallic phase, derived from the Mott state by applying pressure, is found to carry $J_{\rm{eff}}=3/2$ moments. The characteristic… ▽ More By means of density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations and resonant inelastic x-ray scattering (RIXS) experiments, we investigate the high-pressure phases of the spin-orbit-coupled $J_{\rm{eff}}=3/2$ insulator GaTa$_4$Se$_8$. Its metallic phase, derived from the Mott state by applying pressure, is found to carry $J_{\rm{eff}}=3/2$ moments. The characteristic excitation peak in the RIXS spectrum maintains its destructive quantum interference of $J_{\rm{eff}}$ at the Ta $L_2$-edge up to 10.4 GPa. Our exact diagonalization based DFT+DMFT calculations including spin-orbit coupling also reveal that the $J_{\rm{eff}}=3/2$ character can be clearly identified under high pressure. These results establish the intriguing nature of the correlated metallic magnetic phase, which represents the first confirmed example of $J_{\rm{eff}}$=3/2 moments residing in a metal. They also indicate that the pressure-induced superconductivity is likely unconventional and influenced by these $J_{\rm{eff}}=3/2$ moments. Based on a self-energy analysis, we furthermore propose the possibility of do**-induced superconductivity related to a spin-freezing crossover. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 7 pages, 5 figures (additional 4 pages and 6 figures for supplemental materials)

Journal ref: Phys. Rev. B 103, 081112 (2021)

Strain Wave Pathway to Semiconductor-to-Metal Transition revealed by time resolved X-ray powder diffraction

Authors: C. Mariette, M. Lorenc, H. Cailleau, E. Collet, L. Guérin, A. Volte, E. Trzop, R. Bertoni, X. Dong, B. Lépine, O Hernandez, E. Janod, L. Cario, V. Ta Phuoc, S. Ohkoshi, H. Tokoro, L. Patthey, A. Babic, I. Usov, D. Ozerov, L. Sala, S. Ebner, P. Böhler, A Keller, A. Oggenfuss , et al. (20 additional authors not shown)

Abstract: Thanks to the remarkable developments of ultrafast science, one of today's challenges is to modify material state by controlling with a light pulse the coherent motions that connect two different phases. Here we show how strain waves, launched by electronic and structural precursor phenomena, determine a macroscopic transformation pathway for the semiconducting-to-metal transition with large volum… ▽ More Thanks to the remarkable developments of ultrafast science, one of today's challenges is to modify material state by controlling with a light pulse the coherent motions that connect two different phases. Here we show how strain waves, launched by electronic and structural precursor phenomena, determine a macroscopic transformation pathway for the semiconducting-to-metal transition with large volume change in bistable Ti$_3$O$_5$ nanocrystals. Femtosecond powder X-ray diffraction allowed us to quantify the structural deformations associated with the photoinduced phase transition on relevant time scales. We monitored the early intra-cell distortions around absorbing metal dimers, but also long range crystalline deformations dynamically governed by acoustic waves launched at the laser-exposed Ti$_3$O$_5$ surface. We rationalize these observations with a simplified elastic model, demonstrating that a macroscopic transformation occurs concomitantly with the propagating acoustic wavefront on the picosecond timescale, several decades earlier than the subsequent thermal processes governed by heat diffusion. △ Less

Submitted 20 February, 2020; v1 submitted 19 February, 2020; originally announced February 2020.

Comments: 30 pages (including supplementary text), 5 main figures, 9 supplementary figures; corrected author list

Unexplored reactivity of (Sn)2- Oligomers with transition metals in low-temperature solid-state reactions

Authors: Shunsuke Sasaki, Melanie Lesault, Elodie Grange, Etienne Janod, Benoît Corraze, Sylvian Cadars, Maria Teresa Caldes, Catherine Guillot-Deudon, Stéphane Jobic, Laurent Cario

Abstract: Chalcogenides (Q = S, Se, Te), one of the most important family of materials in solid-state chemistry, differ from oxides by their ability to form covalently-bonded (Qn)2- oligomers. Each chalcogen atom within such entity fulfills the octet rule by sharing electrons with other chalcogen atoms but some antibonding levels are vacant. This makes these oligomers particularly suited for redox reactions… ▽ More Chalcogenides (Q = S, Se, Te), one of the most important family of materials in solid-state chemistry, differ from oxides by their ability to form covalently-bonded (Qn)2- oligomers. Each chalcogen atom within such entity fulfills the octet rule by sharing electrons with other chalcogen atoms but some antibonding levels are vacant. This makes these oligomers particularly suited for redox reactions in solid state, namely towards elemental metals with a low redox potential that may be oxidized. We recently used this strategy to design, at low temperature and in an orientated manner, materials with 2D infinite layers through the topochemical insertion of copper into preformed precursors containing (S2)2- and/or (Se2)2- dimers (i.e. La2O2S2, Ba2F2S2 and LaSe2). Herein we extend the validity of the concept to the redox activity of (S2)2- and (S3)2- oligomers towards 3d transition metal elements (Cu, Ni, Fe) and highlight the strong relationship between the structures of the precursors, BaS2 and BaS3, and the products, BaCu2S2, BaCu4S3, BaNiS2 and BaFe2S3. Clearly, beyond the natural interest for the chemical reactivity of oligomers to generate compounds, this soft chemistry route may conduct to the rational conception of materials with a predicted crystal structure. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Relaxation of a Mott-neuron

Authors: Federico Tesler, Coline Adda, Julien Tranchant, Benoit Corraze, Etienne Janod, Laurent Cario, Pablo Stoliar, Marcelo Rozenberg

Abstract: We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation the final state may show a short lived or a long lived resistance change. We extend a previous model for the EMT to include the effect of local structural distortions through an elastic en… ▽ More We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation the final state may show a short lived or a long lived resistance change. We extend a previous model for the EMT to include the effect of local structural distortions through an elastic energy term. We find that by strong electric pulsing the induced metastable phase may become further stabilized by the electro-elastic effect. We present a systematic study of the model by numerical simulations and compare the results to new experiments in Mott insulators of the AM4Q8 family. Our work significantly extends the scope of our recently introduced leaky-integrate-and-fire Mott-neuron [P. Stoliar Adv Mat 2017] to bring new insight on the physical mechanism of its relaxation. This is a key feature for future neuromorphic circuit implementations. △ Less

Submitted 14 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. Applied 10, 054001 (2018)

Direct experimental observation of the molecular Jeff=3/2 ground state in the lacunar spinel GaTa4Se8

Authors: Min Yong Jeong, Seo Hyoung Chang, Beom Hyun Kim, Jae-Hoon Sim, Ayman Said, Diego Casa, Thomas Gog, Etienne Janod, Laurent Cario, Seiji Yunoki, Myung Joon Han, Jungho Kim

Abstract: Strong spin-orbit coupling lifts the degeneracy of t2g orbitals in 5d transition-metal systems, leaving a Kramers doublet and quartet with effective angular momentum of Jeff = 1/2 and 3/2, respectively. These spin-orbit entangled states can host exotic quantum phases such as topological Mott state, unconventional superconductivity, and quantum spin liquid. The lacunar spinel GaTa4Se8 was theoretic… ▽ More Strong spin-orbit coupling lifts the degeneracy of t2g orbitals in 5d transition-metal systems, leaving a Kramers doublet and quartet with effective angular momentum of Jeff = 1/2 and 3/2, respectively. These spin-orbit entangled states can host exotic quantum phases such as topological Mott state, unconventional superconductivity, and quantum spin liquid. The lacunar spinel GaTa4Se8 was theoretically predicted to form the molecular Jeff = 3/2 ground state. Experimental verification of its existence is an important first step to exploring the consequences of the Jeff = 3/2 state. Here, we report direct experimental evidence of the Jeff = 3/2 state in GaTa4Se8 by means of excitation spectra of resonant inelastic x-rays scattering at the Ta L3 and L2 edges. We found that the excitations involving the Jeff = 1/2 molecular orbital were suppressed only at the Ta L2 edge, manifesting the realization of the molecular Jeff = 3/2 ground state in GaTa4Se8. △ Less

Submitted 20 October, 2017; v1 submitted 4 August, 2017; originally announced August 2017.

Comments: 25 pages, 5 figures + Supplementary Materials [10 pages, 5 figures]

Journal ref: Nature Communications 8, Article number: 782 (2017)

Watching the birth of a charge density wave order: diffraction study on nanometer-and picosecond-scales

Authors: C. Laulhé, T. Huber, G. Lantz, A. Ferrer, S. O. Mariager, S. Grübel, J. Rittmann, J. A. Johnson, V. Esposito, A. Lübcke, L. Huber, M. Kubli, M. Savoini, V. L. R. Jacques, L. Cario, B. Corraze, E. Janod, G. Ingold, P. Beaud, S. L. Johnson, S. Ravy

Abstract: Femtosecond time-resolved X-ray diffraction is used to study a photo-induced phase transition between two charge density wave (CDW) states in 1T-TaS$_2$, namely the nearly commensurate (NC) and the incommensurate (I) CDW states. Structural modulations associated with the NC-CDW order are found to disappear within 400 fs. The photo-induced I-CDW phase then develops through a nucleation/growth proce… ▽ More Femtosecond time-resolved X-ray diffraction is used to study a photo-induced phase transition between two charge density wave (CDW) states in 1T-TaS$_2$, namely the nearly commensurate (NC) and the incommensurate (I) CDW states. Structural modulations associated with the NC-CDW order are found to disappear within 400 fs. The photo-induced I-CDW phase then develops through a nucleation/growth process which ends 100 ps after laser excitation. We demonstrate that the newly formed I-CDW phase is fragmented into several nanometric domains that are growing through a coarsening process. The coarsening dynamics is found to follow the universal Lifshitz-Allen-Cahn growth law, which describes the ordering kinetics in systems exhibiting a non-conservative order parameter. △ Less

Submitted 21 March, 2017; originally announced March 2017.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. Lett. 118, 247401 (2017)

Long range coherent magnetic bound states in superconductors

Authors: Gerbold C. Ménard, Sébastien Guissart, Christophe Brun, Stéphane Pons, Vasily S. Stolyarov, François Debontridder, Matthieu V. Leclerc, Etienne Janod, Laurent Cario, Dimitri Roditchev, Pascal Simon, Tristan Cren

Abstract: The quantum coherent coupling of completely different degrees of freedom is a challenging path towards creating new functionalities for quantum electronics. Usually the antagonistic coupling between spins of magnetic impurities and superconductivity leads to the destruction of the superconducting order. Here we show that a localized classical spin of an iron atom immersed in a superconducting cond… ▽ More The quantum coherent coupling of completely different degrees of freedom is a challenging path towards creating new functionalities for quantum electronics. Usually the antagonistic coupling between spins of magnetic impurities and superconductivity leads to the destruction of the superconducting order. Here we show that a localized classical spin of an iron atom immersed in a superconducting condensate can give rise to new kind of long range coherent magnetic quantum state. In addition to the well-known Shiba bound state present on top of an impurity we reveal the existence of a star shaped pattern which extends as far as 12 nm from the impurity location. This large spatial dispersion turns out to be related, in a non-trivial way, to the superconducting coherence length. Inside star branches we observed short scale interference fringes with a particle-hole asymmetry. Our theoretical approach captures these features and relates them to the electronic band structure and the Fermi wave length of the superconductor. The discovery of a directional long range effect implies that distant magnetic atoms could coherently interact leading to new topological superconducting phases with fascinating properties. △ Less

Submitted 22 June, 2015; originally announced June 2015.

Journal ref: Nature Physics 11, 1013 (2015)

First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

Authors: A. Camjayi, C. Acha, R. Weht, M. G. Rodríguez, B. Corraze, E. Janod, L. Cario, M. J. Rozenberg

Abstract: The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of t… ▽ More The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement. △ Less

Submitted 15 September, 2014; originally announced September 2014.

Comments: 5 pages and 4 figures. Supplemental material: 2 pages, 2 figures

Journal ref: Phys. Rev. Lett. 113, 086404 (2014)

Non thermal and purely electronic resistive transition in narrow gap Mott insulators

Authors: P. Stoliar, M. Rozenberg, E. Janod, B. Corraze, J. Tranchant, L. Cario

Abstract: Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle… ▽ More Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under electric field of a canonical Mott insulator and a model built on a realistic 2D resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM4Q8, (A = Ga or Ge; M=V, Nb or Ta, and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under electric field arises from a purely electronic mechanism. △ Less

Submitted 8 July, 2014; originally announced July 2014.

Comments: Accepted for publication in Physical Review B

Universal electric-field-driven resistive transition in narrow-gap Mott insulators

Authors: Pablo Stoliar, Laurent Cario, Etienne Janod, Benoit Corraze, Catherine Guillot-Deudon, Sabrina Salmon-Bourmand, Vincent Guiot, Julien Tranchant, Marcelo Rozenberg

Abstract: One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott insulator-to-metal transition (IMT), which is driven by strong electronic correlation effects, holds the promise of a commutation speed set by a quantum transition, and with n… ▽ More One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott insulator-to-metal transition (IMT), which is driven by strong electronic correlation effects, holds the promise of a commutation speed set by a quantum transition, and with negligible power dissipation. In this context, one possible route to control the Mott transition is to electrostatically dope the systems using strong dielectrics, in FET-like devices. Another possibility is through resistive switching, that is, to induce the insulator-to-metal transition by strong electric pulsing. This action brings the correlated system far from equilibrium, rendering the exact treatment of the problem a difficult challenge. Here, we show that existing theoretical predictions of the off-equilibrium manybody problem err by orders of magnitudes, when compared to experiments that we performed on three prototypical narrow gap Mott systems V2-xCrxO3, NiS2-xSex and GaTa4Se8, and which also demonstrate a striking universality of this Mott resistive transition (MRT). We then introduce and numerically study a model based on key theoretically known physical features of the Mott phenomenon in the Hubbard model. We find that our model predictions are in very good agreement with the observed universal MRT and with a non-trivial timedelay electric pulsing experiment, which we also report. Our study demonstrates that the MRT can be associated to a dynamically directed avalanche. △ Less

Submitted 20 September, 2013; originally announced September 2013.

Journal ref: Advanced Materials 25, 23 (2013) 3222-3226

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories

Authors: Laurent Cario, Cristian Vaju, Benoit Corraze, Vincent Guiot, Etienne Janod

Abstract: The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon reach their miniaturization limits mostly because reliably kee** enough electrons in an always smaller cell size will become increasingly difficult . The con… ▽ More The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon reach their miniaturization limits mostly because reliably kee** enough electrons in an always smaller cell size will become increasingly difficult . The control of electrical resistance at the nanometer scale therefore requires new concepts, and the ultimate resistance-change device is believed to exploit a purely electronic phase change such as the Mott insulator to insulator transition [2]. Here we show that application of short electric pulses allows to switch back and forth between an initial high-resistance insulating state ("0" state) and a low-resistance "metallic" state ("1" state) in the whole class of Mott Insulator compounds AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se). We found that electric fields as low as 2 kV/cm induce an electronic phase change in these compounds from a Mott insulating state to a metallic-like state. Our results suggest that this transition belongs to a new class of resistive switching and might be explained by recent theoretical works predicting that an insulator to metal transition can be achieved by a simple electric field in a Mott Insulator. This new type of resistive switching has potential to build up a new class of Resistive Random Access Memory (RRAM) with fast writing/erasing times (50 ns to 10 μs) and resistance ratios ΔR/R of the order of 25% at room temperature. △ Less

Submitted 20 April, 2013; originally announced April 2013.

Journal ref: Advanced Materials 22, 45 (2010) 5193

Resistive switching induced by electronic avalanche breakdown in GaTa$_4$Se$_{8-x}$Te$_x$ narrow gap Mott Insulators

Authors: Vincent Guiot, Laurent Cario, Etienne Janod, Benoit Corraze, Vinh Ta Phuoc, Marcelo Rozenberg, Pablo Stoliar, Tristan Cren, Dimitri Roditchev

Abstract: Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow gap Mott insulators GaTa$_4$Se$_{8-x}$Te$_x$. We find that the I-V char… ▽ More Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow gap Mott insulators GaTa$_4$Se$_{8-x}$Te$_x$. We find that the I-V characteristics and the magnitude of the threshold electric field (E$_{th}$) do not correspond to a Zener breakdown, but rather to an avalanche breakdown. E$_{th}$ increases as a power law of the Mott Hubbard gap (E$_g$), in surprising agreement with the universal law E$_{th}$ $\propto$E$_g$$^{2.5}$ reported for avalanche breakdown in semiconductors. However, the delay time for the avalanche that we observe in Mott insulators is over three orders of magnitude longer than in conventional semiconductors. Our results suggest that the electric field induces local insulator-to-metal Mott transitions that create conductive domains which grow to form filamentary paths across the sample. △ Less

Submitted 17 April, 2013; originally announced April 2013.

Journal ref: Nature Communications 4 (2013) 1722

Ultrafast filling of an electronic pseudogap in an incommensurate crystal

Authors: V. Brouet, J. Mauchain, E. Papalazarou, J. Faure, M. Marsi, P. H. Lin, A. Taleb-Ibrahimi, P. Le Fevre, F. Bertran, L. Cario, E. Janod, B. Corraze, V. Ta Phuoc, L. Perfetti

Abstract: We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K… ▽ More We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K induces a partial filling of the electronic pseudogap within less than 80 fs. The electronic energy flows into the lattice modes on a comparable timescale. We attribute this surprisingly short timescale to a very strong electron-phonon coupling to the incommensurate distortion. This result sheds light on the electronic localization arising in aperiodic structures and quasicrystals. △ Less

Submitted 29 January, 2013; originally announced January 2013.

Journal ref: Physical Review B 87, 041106(R) (2013)

Temperature driven Vanadium clusterization and band gap enlargement in the layered misfit compound (LaS)$_{1.196}$VS$_2$

Authors: V. Ta Phuoc, V. Brouet, B. Corraze, E. Janod, L. Cario

Abstract: Intriguing properties of the misfit layered chalcogenide (LaS)$_{1.196}$VS$_2$ crystals were investigated by transport, optical measurements, angle-resolved photoemission (ARPES) and x-ray diffraction. Although no clear anomaly is found in transport properties as a function of temperature, a large spectral weight transfer, up to at least 1 eV, is observed by both optical and photoemission spectros… ▽ More Intriguing properties of the misfit layered chalcogenide (LaS)$_{1.196}$VS$_2$ crystals were investigated by transport, optical measurements, angle-resolved photoemission (ARPES) and x-ray diffraction. Although no clear anomaly is found in transport properties as a function of temperature, a large spectral weight transfer, up to at least 1 eV, is observed by both optical and photoemission spectroscopies. ARPES reveals that a nearly filled band with negative curvature, close enough from the Fermi level at 300K to produce metallic-like behaviour as observed in optical conductivity spectra. At low temperature, the band structure is strongly modified, yielding to an insulating state with a optical gap of 120 meV. An accurate (3+1)D analysis of x-ray diffraction data shows that, although a phase transition does not occur, structural distortions increase as temperature is decreased, and vanadium clusterization is enhanced. We found that the changes of electronic properties and structure are intimately related. This indicates that structural distorsion play a major role in the insulating nature of (LaS)$_{1.196}$VS$_2$ and that electronic correlation may not be important, contrary to previous belief. These results shed a new light on the mechanism at the origin of non-linear electric properties observed in (LaS)$_{1.196}$VS$_2$. △ Less

Submitted 29 October, 2012; originally announced October 2012.

Electric pulse induced electronic patchwork in the Mott insulator GaTa$_{4}$Se$_{8}$

Authors: Vincent Dubost, Tristan Cren, François Debontridder, Dimitri Roditchev, Cristian Vaju, Vincent Guiot, Laurent Cario, Benoît Corraze, Etienne Janod

Abstract: Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samp… ▽ More Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samples reveal at nanometer scale a complex electronic pattern that consists of metallic and super-insulating patches immersed in the pristine insulating matrix. Surprisingly, both kinds of patches are accompanied by a strong local topographic inflation, thus evidencing for a strong electron-lattice coupling involved in this metal-insulator transition. Finally, using a strong electric field generated across the STM tunneling junction, we demonstrate the possibility to trig the metal-insulator transition locally even at room temperature. △ Less

Submitted 29 April, 2013; v1 submitted 21 May, 2012; originally announced May 2012.

Comments: This paper has been strongly modified and a new version will be submitted soon

Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator

Authors: C. Vaju, L. Cario, B. Corraze, E. Janod, V. Dubost, T. Cren, D. Roditchev, D. Braithwaite, O. Chauvet

Abstract: Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these sys… ▽ More Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron do** or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such as an electric field. We report here the first experimental evidence of a non-volatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. Our Scanning Tunneling Microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer scale Electronic Phase Separation (EPS) generated in the bulk material. △ Less

Submitted 10 September, 2009; originally announced September 2009.

Comments: Highlight in Advanced Functional Materials 18, 1-4 (2008) doi : 10.1002/adfm.200800558

Journal ref: Advanced Materials 20, 2760-2765 (2008)

Electric field effects, Mott insulator, Surface patterning, Scanning tunneling microscopy, Transition metal chalcogenides

Authors: Vincent Dubost, T. Cren, C. Vaju, Laurent Cario, B. Corraze, E. Janod, François Debontridder, D. Roditchev

Abstract: We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the… ▽ More We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the surface suddenly inflates and comes in contact with the STM tip, resulting in nanometer size craters. The formed pattern can be indestructibly "read" by STM at lower voltage bias, thus allowing a 5 Tdots/inch2 dense writing/reading at room temperature. The discovery of the electromechanical coupling in GaTa4Se8 might give new clues in the understanding of the Electric Pulse Induced Resistive Switching recently observed in this stoechiometric Mott insulator. △ Less

Submitted 30 June, 2009; originally announced June 2009.

Comments: Accepted for Advanced Functional Materials

Magnetoelastic polarons in the hole-doped quasi-one dimensional model system Y2-xCaxBaNiO5

Authors: Francois-Xavier Lannuzel, Etienne Janod, Christophe Payen, Benoit Corraze, Daniel Braithwaite, Olivier Chauvet

Abstract: Charge transport in the hole-doped quasi-1D model system Y$_{2-x}$Ca$_x$BaNiO$_5$ (x $ leq$ 0.15) is investigated in the 50-300 K temperature range. The resistivity temperature dependence is characterized by a constant activation energy $E_{a}/k_{B} sim$ 1830 K at room temperature while $E_{a}$ decreases upon cooling. We suggest that $E_{a}$ measures the binding energy of the doped holes which f… ▽ More Charge transport in the hole-doped quasi-1D model system Y$_{2-x}$Ca$_x$BaNiO$_5$ (x $ leq$ 0.15) is investigated in the 50-300 K temperature range. The resistivity temperature dependence is characterized by a constant activation energy $E_{a}/k_{B} sim$ 1830 K at room temperature while $E_{a}$ decreases upon cooling. We suggest that $E_{a}$ measures the binding energy of the doped holes which form magneto-acoustic polarons when polarizing the neighboring Ni spins. A semi-classical model is proposed which allows to relate the electrical measurements and the bulk magnetic susceptibility. This model gives a picture of the spin-charge-lattice relation in this inhomogeneously doped quasi-1D system and explains its unusual one-particle charge excitation spectrum close to the Fermi level. △ Less

Submitted 4 November, 2004; originally announced November 2004.

Comments: October 4th, 2004

Journal ref: Physical Review B 70 (2004) 155111

Crystal structure and charge order below the metal-insulator transition in the vanadium bronze $β$-SrV$_6$O$_{15}$

Authors: Claire Sellier, Florent Boucher, Etienne Janod

Abstract: Single crystal X-ray diffraction measurements were performed on one-dimensional mixed valence vanadium bronze $β$-SrV$_6$O$_{15}$ in which a metal-insulator transition exists at 170 K. Above 170 K the P2$_1$/a structure with zigzag order of Sr in the tunnels of vanadium is confirmed. In the structure below 170 K, the P2$_1$/a space group is retained with a b-axis threefold increase and a charge… ▽ More Single crystal X-ray diffraction measurements were performed on one-dimensional mixed valence vanadium bronze $β$-SrV$_6$O$_{15}$ in which a metal-insulator transition exists at 170 K. Above 170 K the P2$_1$/a structure with zigzag order of Sr in the tunnels of vanadium is confirmed. In the structure below 170 K, the P2$_1$/a space group is retained with a b-axis threefold increase and a charge order appears. A Bond Valence Sum analysis shows that the charge order may consist in clusters of V$^{4+}$ regularly spaced along 1D direction. △ Less

Submitted 24 February, 2003; originally announced February 2003.

Comments: 8 pages ; to be published in Solid State Science

Anomalous spectral weight in photoemission spectra of the hole doped Haldane chain Y2-xSrxBaNiO5

Authors: Y. Fagot-Revurat, D. Malterre, F. X. Lannuzel, E. Janod, C. Payen, L. Gavioli, F. Bertran

Abstract: In this paper, we present photoemission experiments on the hole doped Haldane chain compound $Y_{2-x}Sr_xBaNiO_5$. By using the photon energy dependence of the photoemission cross section, we identified the symmetry of the first ionisation states (d type). Hole do** in this system leads to a significant increase in the spectral weight at the top of the valence band without any change in the vi… ▽ More In this paper, we present photoemission experiments on the hole doped Haldane chain compound $Y_{2-x}Sr_xBaNiO_5$. By using the photon energy dependence of the photoemission cross section, we identified the symmetry of the first ionisation states (d type). Hole do** in this system leads to a significant increase in the spectral weight at the top of the valence band without any change in the vicinity of the Fermi energy. This behavior, not observed in other charge transfer oxides at low do** level, could result from the inhomogeneous character of the doped system and from a Ni 3d-O 2p hybridization enhancement due to the shortening of the relevant Ni-O distance in the localized hole-doped regions. △ Less

Submitted 27 November, 2002; originally announced November 2002.

Comments: 5 pages, 4 figures

Unconventional antiferromagnetic correlations of the doped Haldane gap system Y$_2$BaNi$_{1-x}$Zn$_x$O$_5$

Authors: V. Villar, R. Mélin, C. Paulsen, J. Souletie, E. Janod, C. Payen

Abstract: We make a new proposal to describe the very low temperature susceptibility of the doped Haldane gap compound Y$_2$BaNi$_{1-x}$Zn$_x$O$_5$. We propose a new mean field model relevant for this compound. The ground state of this mean field model is unconventional because antiferromagnetism coexists with random dimers. We present new susceptibility experiments at very low temperature. We obtain a Cu… ▽ More We make a new proposal to describe the very low temperature susceptibility of the doped Haldane gap compound Y$_2$BaNi$_{1-x}$Zn$_x$O$_5$. We propose a new mean field model relevant for this compound. The ground state of this mean field model is unconventional because antiferromagnetism coexists with random dimers. We present new susceptibility experiments at very low temperature. We obtain a Curie-Weiss susceptibility $χ(T) \sim C / (Θ+T)$ as expected for antiferromagnetic correlations but we do not obtain a direct signature of antiferromagnetic long range order. We explain how to obtain the ``impurity'' susceptibility $χ_{imp}(T)$ by subtracting the Haldane gap contribution to the total susceptibility. In the temperature range [1 K, 300 K] the experimental data are well fitted by $T χ_{imp}(T) = C_{imp} (1 + T_{imp}/T )^{-γ}$. In the temperature range [100 mK, 1 K] the experimental data are well fitted by $T χ_{imp}(T) = A \ln{(T/T_c)}$, where $T_c$ increases with $x$. This fit suggests the existence of a finite Néel temperature which is however too small to be probed directly in our experiments. We also obtain a maximum in the temperature dependence of the ac-susceptibility $χ'(T)$ which suggests the existence of antiferromagnetic correlations at very low temperature. △ Less

Submitted 6 November, 2001; v1 submitted 13 July, 2001; originally announced July 2001.

Comments: 19 pages, 17 figures, revised version (minor modifications)

Journal ref: Eur. Phys. J. B 25, 39-51 (2002)

Random interactions and spin-glass thermodynamic transition in the hole-doped Haldane system Y$_{2-x}$Ca$_x$BaNiO$_5$

Authors: E. Janod, C. Payen, F. -X. Lannuzel, K. Schoumacker

Abstract: Magnetization, DC and AC bulk susceptibility of the $S$=1 Haldane chain system doped with electronic holes, Y$_{2-x}$Ca$_x$BaNiO$_5$ (0$\leq$x$\leq$0.20), have been measured and analyzed. The most striking results are (i) a sub-Curie power law behavior of the linear susceptibility, $χ(T)$$\sim $ $T$$^{-α}$, for temperature lower than the Haldane gap of the undoped compound (x=0) (ii) the existen… ▽ More Magnetization, DC and AC bulk susceptibility of the $S$=1 Haldane chain system doped with electronic holes, Y$_{2-x}$Ca$_x$BaNiO$_5$ (0$\leq$x$\leq$0.20), have been measured and analyzed. The most striking results are (i) a sub-Curie power law behavior of the linear susceptibility, $χ(T)$$\sim $ $T$$^{-α}$, for temperature lower than the Haldane gap of the undoped compound (x=0) (ii) the existence of a spin-glass thermodynamic transition at $T$$_g$ = 2-3 K. These findings are consistent with (i) random couplings within the chains between the spin degrees of freedom induced by hole do**, (ii) the existence of ferromagnetic bonds that induce magnetic frustration when interchain interactions come into play at low temperature. △ Less

Submitted 19 March, 2001; originally announced March 2001.

Comments: 4 pages, 4 figures, to appear in Phys. Rev. B

Experimental evidence for a spin gap in the s=1/2 quantum antiferromagnet Cu$_2$(OH)$_2$CO$_3$

Authors: E. Janod, L. Leonyuk, V. Maltsev

Abstract: Magnetic properties of the natural mineral Cu$_2$(OH)$_2$CO$_3$ (malachite) were investigated through DC and AC susceptibility measurements. The analysis of the low-temperature part reveals a quantum spin-gap behavior with $Δ\approx 130 K$. Consistently with the crystal structure, the magnetic susceptibility can be accurately described by a model of alternating chain. The non-frustrating residua… ▽ More Magnetic properties of the natural mineral Cu$_2$(OH)$_2$CO$_3$ (malachite) were investigated through DC and AC susceptibility measurements. The analysis of the low-temperature part reveals a quantum spin-gap behavior with $Δ\approx 130 K$. Consistently with the crystal structure, the magnetic susceptibility can be accurately described by a model of alternating chain. The non-frustrating residual inter-chain magnetic couplings, describing a sort of dimerized square planar lattice, are not strong enough to push the system towards a long-range ordered ground state, in good agreement with recent theoretical studies. △ Less

Submitted 4 September, 2000; originally announced September 2000.

Comments: 4 pages, 3 figures, 1 table

Evidence of quantum criticality in the doped Haldane system Y2BaNiO5

Authors: C. Payen, E. Janod, K. Schoumacker, C. D. Batista, K. Hallberg, A. A. Aligia

Abstract: Experimental bulk susceptibility X(T) and magnetization M(H,T) of the S=1-Haldane chain system doped with nonmagnetic impurities, Y2BaNi1-xZnxO5 (x=0.04,0.06,0.08), are analyzed. A numerical calculation for the low-energy spectrum of non-interacting open segments describes very well experimental data above 4 K. Below 4 K, we observe power-law behaviors, X(T)=T^-alpha and M(H,T)/T^(1-alpha)=f(alp… ▽ More Experimental bulk susceptibility X(T) and magnetization M(H,T) of the S=1-Haldane chain system doped with nonmagnetic impurities, Y2BaNi1-xZnxO5 (x=0.04,0.06,0.08), are analyzed. A numerical calculation for the low-energy spectrum of non-interacting open segments describes very well experimental data above 4 K. Below 4 K, we observe power-law behaviors, X(T)=T^-alpha and M(H,T)/T^(1-alpha)=f(alpha,(H/T)), with alpha (<1) depending on the do** concentration x.This observation suggests the appearance of a gapless quantum phase due to a broad distribution of effective couplings between the dilution-induced moments. △ Less

Submitted 9 March, 2000; originally announced March 2000.

Comments: 4 pages, 3 figures